• 한국세라믹학회지
• /
• 제40권4호
• /
• pp.380-384
• /
• 2003

The effects of the mole concentrations of precursor solution on the microstructure and dielectric properties of sol-gel deposited $Ba_{0.85}$S $r_{0.15}$Ti $O_3$(BST) thin films have been investigated. The films were of single perovskite phase with strong (100) preferred orientation when grown on LaNi0$_3$ buffered Pt/Ti/ $SiO_2$Si substrates using a diluted precursor solution. Variation of the precursor solution concentration resulted in a different microstructure and, in turn, affected the tunability of the sol-gel deposited films. It was observed that leakage currents increased asymmetrically for the negative and positive bias voltage with decreasing thickness. Overall results suggest that those BST films have acceptable properties f3r applications as room-temperature tunable elements.

• 한국결정성장학회지
• /
• 제12권1호
• /
• pp.31-35
• /
• 2002

상용 스피넬 분말(0.94$\mu$m)을 $1300^{\circ}C$ 2시간 열처리한 후 30분 동안 습식혼합하여 3.29$\mu$m의 최종분말을 제조하여 die-press법을 이용하여 $1100^{\circ}C$에서 2시간 1차 소결하여 다공성 전성형체를 제조하고 $1080^{\circ}C$에서 0~2시간가지 $La_2O_3-A1_2O_3-SiO_2$계 유리를 용응 침투시켜 유리 침투 깊이와 시간간의 kinetic을 조사하였다 유리 침투시간이 증가할수록 침투깊이는 모세관압에 의하여 parabolic하게 증가하였다. 유리-스피넬 복합체의 강도와 인성값은 각각 317MPa, 3.56MPa . $m^{1/2}$이 었으며 $1300^{\circ}C$의 높은 하소온도로 인한 재결정에 의하여 스피넬은 침상과 다각형 조직이 동시에 존재하는 이중 미세조직 이 관찰되었다.

• 보존과학회지
• /
• 제38권4호
• /
• pp.289-300
• /
• 2022

In the 6^th and 7^th centuries, 5 iron artifacts excavated form the Baekje Stone Tomb in Guryong-ri site, Ungcheon, Boryeong, were studied. The sample were metal microscopic observation, SEM-EDS analysis and Raman micro-spectroscopy analysis were conducted to understand the metallurgical characteristics. The microstructure observation showed the presence of ferrite and pearlite throughout, and differences in carbon content existed depending on the direction. Non-metallic inclusions were in the form of long lines, and most of them were wüstite, fayalite. It is indicated that the artifacts were forge welded using hypoeutectoid steel, with signs of carburizing and decarburizing processes. Some crystals with high P₂O₅, TiO₂, CaO content were identified as sarcopside, ulvöspinel, and perovskite, respectively, through Raman spectroscopy. A comparison of the results with previous studies on the sites of Bujang-ri site in Seosan and Bongseon-ri site in Seocheon, which are adjacent sites in the coastal area, revealed that, while heat treatment technology was available, the artifacts were not heat-treated considering the purpose for use for these artifacts. The chemical composition of the non-metallic inclusions P₂O₅, TiO₂, CaO were plotted in proportions to SiO₂ and compared with adjacent sites. Considering that the P₂O₅/SiO₂ ratio was widely distributed, the refining technology was not uniform. In addition, the TiO₂/SiO₂ ratio was found to be higher than that of other sites, meaning that a titanium-containing ore was used to manufacture the artifacts, unlike in surrounding sites, but it is not detected in all artifacts, so it may have been affected by various factors such as furnace walls in addition to raw materials. Although slag formers were used, considering the CaO/SiO₂ ratio and the (Al₂O₃/SiO₂)/(CaO/SiO₂) ratio, which appear to be similar to the surrounding sites, but it is possible that CaO containing raw ore was used because it is also affected by the components of raw ore. As a result of the study, it is highly likely that ore different from that of the surrounding sites was used for production, but a more comprehensive comparative study with the surrounding sites is needed in the future.

• 한국전기전자재료학회논문지
• /
• 제13권12호
• /
• pp.1017-1024
• /
• 2000

Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

• 한국재료학회지
• /
• 제29권3호
• /
• pp.137-142
• /
• 2019

The microstructure, phase, and mechanical properties of three aged porcelain insulators which were manufactured in different years (1973, 1995 and 2008) and which were used in the field for different amounts of time, were investigated. With X-ray 3D computed tomography (CT), defects with ~mm size can be detected without destroying the aged insulators. Defects of small specimens, which are cut from the aged insulators and polished, are analyzed with optical and scanning electron microscopy (OM and SEM), and defects of um size are detected by OM and SEM. The number and size of defects in all the aged insulators are similar. Porcelain insulators manufactured in 1973 contain more $SiO_2$ (quartz and cristobalite) than those manufactured in 2008. Those manufactured in 2008 contain more $Al_2O_3$ than those manufactured earlier. The Vickers hardness of the insulator manufactured in 1973 has the lowest value. The formation of the cristobalite ($SiO_2$) in the insulator manufactured in 1973 which can come from the phase transformation of quartz can cause stress in the insulator by formation of microcracks, which can lead to the low hardness of the insulator.

• 한국분말재료학회지
• /
• 제15권1호
• /
• pp.1-5
• /
• 2008

ZnS-$SiO_2$ composite is normally used for sputtering target. In recent years, high sputtering power for higher deposition rate often causes crack formation of the target. Therefore the target material is required that the sintered target material should have high crack resistance, excellent strength and a homogeneous microstructure with high sintered density. In this study, raw ZnS and ZnS-$SiO_2$ powders prepared by a 3-D mixer or high energy ball-milling were successfully densified by spark plasma sintering, the effective densification method of hard-to-sinter materials in a short time. After sintering, the fracture toughness was measured by the indentation fracture (IF) method. Due to the effect of crack deflection by the residual stress occurred by the second phase of fine $SiO_2$, the hardness and fracture toughness reached to 3.031 GPa and $1.014MPa{\cdot}m^{1/2}$, respectively.

• 한국전기전자재료학회논문지
• /
• 제26권1호
• /
• pp.6-12
• /
• 2013

Aerosol deposition(AD) coating that enable fabricate films at low temperature have begun to be widely researched for the integration of ceramics as well to realize high-speed deposition rates. For application of ceramic thick film by AD to display and electronic ceramic industry, fabrication of dense structure with a no cracking is required. In this study, to fabricate dense ceramic thick film, the effect of crystal phase of starting powder was investigated. For this study, amorphous and crystalline $SiO_2$ powders were used as starting powders. Two types of $SiO_2$ powders were deposited on glass substrate by AD. In the case of amorphous $SiO_2$ powder, the deposited films had extremely incompact and opaque layer, irrespective of particle size. In contrast to amorphous powder, in the case of crystalline powder, porous structure layer and dense microstructure with no cracking layer were fabricated depending on the particle size. The optimized starting powder size for dense coating layer was $1{\sim}2{\mu}m$. The transmittance of film reached a maximum of 76% at 800 nm.

• 한국해양공학회지
• /
• 제22권4호
• /
• pp.59-64
• /
• 2008

The mechanical properties of liquid phase sintered (LPS) SiC materials, with the addition of oxide powder, were investigated, in conjunction with a detailed analysis of their microstructures. LPS-SiC materials were fabricated at a temperature of 1820 $^{\circ}C$ under an argon atmosphere, using three different starting sizes of SiC particles. The sintering additive for the fabrication of the LPS-SiC materials was an $Al_2O_3-Y_2O_3$ mixture with a constant composition ratio ($Al_2O_3/Y_2O_3$: 1.5). The particle sizes of the commercial SiC powderswere 30 nm, 0.3 $\mu$m, and 3.0 $\mu$m. The flexural strength of the LPS-SiC materials was also examined at elevated temperatures. A decrease in the starting size of the SiC particles led to an increase in the flexural strength of the LPS-SiC materials, accompanying a highly dense morphology with the creation of a secondary phase. Such a secondary phase was identified as $Y_3Al_2(AlO_4)2$. The flexural strength of the LPS-SiC materials greatly decreased with an increase in the test temperature, due to the creation of a large amount of pores.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
• /
• pp.115-121
• /
• 2002

In this research we have investigated the characteristics of ultra thin $HfO_2 /SiON$stack structure films using several analytical techniques. SiON layer was thermally grown on standard SCI cleaned silicon wafer at $825^{\circ}C$ for 12sec under $N_2$O ambient. $HfO_2 /SiON$$_4$/$H_2O$ as precursors and $N_2$as a carrier/purge gas. Solid HfCl$_4$was volatilized in a canister kept at $200^{\circ}C$ and carried into the reaction chamber with pure $N_2$carrier gas. $H_2O$ canister was kept at $12^{\circ}C$ and carrier gas was not used. The films were grown on 8-inch (100) p-type Silicon wafer at the $300^{\circ}C$ temperature after standard SCI cleaning, Spectroscopic ellipsometer and TEM were used to investigate the initial growth mechanism, microstructure and thickness. The electrical properties of the film were measured and compared with the physical/chemical properties. The effects of heat treatment was discussed.

• Nuclear Engineering and Technology
• /
• 제53권10호
• /
• pp.3398-3405
• /
• 2021

This study observed the effect of neutron irradiation and ageing on the microstructure, hardness, and corrosion resistance of SAV-1 (Al-Mg-Si) alloy. The investigated material was irradiated with neutrons to fluences of 10²¹-10²⁶ n/m² in the WWR-K research reactor and kept in dry storage. Long-term irradiation led to an increase in hardness of the alloy and a deterioration of pitting corrosion resistance. Post-irradiation ageing for 1 h at 100-300 ℃ resulted in a decrease in microhardness of the irradiated SAV-1. The effect of post-irradiation ageing on pitting corrosion was made clear through the formation of Guinier-Preston zones and secondary precipitates in the Al matrix. Ageing at 250 ℃ corresponded to the development of stable microstructure and the highest corrosion resistance for the irradiated samples. Mg₂Si, Si, and needle-shaped β" precipitates were formed in SAV-1 alloy that was irradiated with low fluences. β" and clusters of rod-shaped B-type precipitates were observed in highly irradiated samples. The precipitates were similar to those seen in non-irradiated pseudo-binary Al-Mg₂Si alloys with Si excess.