• Korean Journal of Optics and Photonics
• /
• v.21 no.4
• /
• pp.175-178
• /
• 2010

A transmission type color filter based on a thin film Ag-$SiO_2$-Ag etalon was proposed and realized in a quartz substrate. The device could acquire infrared suppressed transmission and wide effective area compared to costly e-beam lithography and laser interference lithography. The FDTD method was introduced to take into account the effect of the dispersion characteristics of the silver metal and the thickness thereof. Three different color filters were devised: The cavity length for the red, green and blue filters were 160 nm, 130 nm, and 100 nm respectively, with the metal layer unchanged at 25 nm. The observed center wavelengths were measured at 650 nm, 555 nm, and 480 nm for the red, green, and blue devices; the corresponding bandwidths were about 120 nm, 100 nm, and 120 nm; and the peak transmission for all was ~60%. Finally the relative transmission was measured to decline with the angle of the incident beam with the rate of 1%/degree.

• Korean Journal of Materials Research
• /
• v.24 no.8
• /
• pp.417-422
• /
• 2014

In this study, we investigated localized surface plasmon resonance and the related coupling phenomena with respect to various geometric parameters of Ag nanoparticles, including the size and inter-particle distance. The plasmon resonances of Ag nanoparticles were studied using three-dimensional finite difference time domain(FDTD) calculations. From the FDTD calculations, we discovered the existence of a symmetric and an anti-symmetric plasmon coupling modes in the coupled Ag nanoparticles. The dependence of the resonance wavelength with respect to the inter-particle distance was also investigated, revealing that the anti-symmetric mode is more closely correlated with the inter-particle distance of the Ag nanoparticles than the symmetric mode. We also found that higher order resonance modes are appeared in the extinction spectrum for closely spaced Ag nanoparticles. Plasmon resonance calculations for the Ag particles coated with a $SiO_2$ layer showed enhanced plasmon coupling due to the strengthened plasmon resonance, suggesting that the inter-particle distance of the Ag nanoparticles can be estimated by measuring the transmission and absorption spectra with the plasmon resonance of symmetric and anti-symmetric localized surface plasmons.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.31-32
• /
• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• Journal of the Korean institute of surface engineering
• /
• v.53 no.6
• /
• pp.330-342
• /
• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.

• Journal of the Korean Magnetics Society
• /
• v.14 no.3
• /
• pp.99-104
• /
• 2004

We have studied to understand the barrier and interface qualities and structural changes through measuring temperature dependent spin-polarization as functions of plasma oxidation time and annealing time. Magnetic tunnel junctions consisting of SiO2$_2$/Ta 5/CoFe 17/IrMn 7.5/CoFe 5/Al 1.6-Ox/CoFe 5/Ta 5 (numbers in nm) were deposited and annealed when necessary. A 30 s,40 s oxidized sample showed the lowest spin-polarization values. It is presumed that tunneling electrons were depolarized and scattered by residual paramagnetic Al due to under-oxidation. On the contrary, a 60s, 70 s oxidized sample might have experienced over-oxidation, where partially oxidized magnetic dead layer was formed on top of the bottom CoFe electrode. The magnetic dead layer is known to increase the probability of spin-flip scattering. Therefore it showed a higher temperature dependence than that of the optimum sample (50 s oxidation). temperature dependence of 450 K annealed samples was improved when the as-deposited one compared. But the sample underwent 475 K and 500 K annealing exhibits inferior temperature dependence of spin-polarization, indicating that the over-annealed sample became microstucturally degraded.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.23-23
• /
• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Korean Journal of Heritage: History & Science
• /
• v.44 no.3
• /
• pp.62-77
• /
• 2011

Yi Sunsin's artifacts had been exhibited at Hyeonchungsa in Asan-si, Chungchungnam-do. These artifacts include Janggeom(Long swords), Okno(Jade ornament of Korea traditional hat), Yodae(Waist belt) and Dobae(Peach shaped wine cups) Gudae(Yodae's saucers). These were covered with dust and corroded due to long term display. Condition of these artifacts was examined for a re-opening of Yi Chungmugong Memorial Pavilion on 28 March 2011. Before conservation treatment of the artifacts, scientific analysis was conducted to identify the material of the artifacts. The result showed that the red paint on the hilt of the sword is composed of two layers. Pigments of two layers were found to be hematite and cinnabar mixed with red lead respectively. Mixed layer was assumed to have been applied recently. Also it was found that the blade of the sword was repainted using chrome yellow($PbCrO_4$). Considering the time limit, conservation treatment focused on stabilization of damaged area and prevention of futher risk during display.

• Journal of the Korean Society of Radiology
• /
• v.6 no.1
• /
• pp.73-77
• /
• 2012

Recently, Interest to the photoconductor, which is used to flat form X-ray detector such as a-Se, $HgI_2$, PbO, CdTe, $PbI_2$ etc. is increasing. In this study, the film layer by using the photoconductive material with particle sedimentation was fabricated and evaluated. The quantization efficiency of the continuous X-ray with the 70 kVp energy bandwidth was analyzed by using the Monte Carlo simulation. With the results, the thickness of film with 64 % quantization efficiency was 180 ${\mu}m$ which is similar to the efficiency of 500 ${\mu}m$ a-Se film. And $HIg_2$ film has the high quantization efficiency of 74 % on 240 ${\mu}m$ thickness. The electrical characteristics of the 239 ${\mu}m$ $Hgl_2$ films produced by particle sedimentation were shown as very low dark current(under 10 $pA/mm^2$), and high sensitivity(19.8 mC/mR-sec) with 1 $V/{\mu}m$ input voltage. The SNR, which is influence to the contrast of X-ray image, was shown highly as 3,125 in low driving voltage on 0.8 $V/{\mu}m$. With the results of this study, the development of the low-cost, high-performance image detector with film could be possible by replacing the film produced by particle sedimentation instead to a-Se detector.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.48 no.6
• /
• pp.484-489
• /
• 2003

It is well known that root distribution of rice is a crucial factor for nutrient absorbtion and affect by soil fertility management. However, the findings on root distribution are limited due to laborious and tedious work. The characteristics of root distribution were investigated in long-term fertilizer experiment plots that were established in paddy soil, a fine silty family of typic Hal-paqueps (Pyeongtaeg series) in 1967. fertilizer experiment plots of no fertilizer, compost, NPK and NPK+compost plot have been maintained consistently for the past thirty six year and Npk+silicate plot for the past twenty two years. In NPK plot, 150kg N (urea), 100kg -$\textrm{P}_2\textrm{O}_5$ (fused phosphate) and 100kg $\textrm{K}_2\textrm{O}$(potassium chloride) per hectare have been applied. For NPK+silicate plot, 500kg $\textrm{Si}\textrm{O}_2$ (silicate) was applied in addition to fertilizer in NPK plot. For the compost plot, 10,000kg rice straw compost per hectare were applied. Root samples were taken from the positions of hill-center (below hill) and mid-point of four adjacent rice hills at heading stage by cylinder monolith (CM) method. The soil cores were sampled 20cm depth from the soil surface and partitioned four into layers at an interval of 5cm. The soil particles surrounding roots were washed out with tap water, Length and weight of the roots in each soil layer were measured and root length density (RLD), root weight density (RWD), specific root length(SRL) and rooting depth index (RDI) were calculated. Total root length was measured by intersection method. Plant height, tiller and shoot dry weight were the highest in NPK+compost plot. But RLD of hill-center soil cores was the highest in no-fertilizer plots. In the soil cores from mid-point position of four adjacent hills, RLD at 15-20cm soil depth was higher in compost plot than NPK plot. RLD in compost plots showed even distribution compared to those in chemical- fertilizer plots. RWD was the highest in the NPK+compost plot. SRL was the lowest in the NPK+silicate plot. RDI was the highest in the compost plot. Also, in this experiment it was found that the distribution of roots was closely related to the physical properties of the soil as affected by fertilization management.

• Journal of Environmental Impact Assessment
• /
• v.25 no.3
• /
• pp.209-221
• /
• 2016

The section from water source to 2.6km upper stream of Hantan River is protected as the drinking water quality protection area according to guidelines of Ministry of Environment, because water source of the Gwanin water intake plant has been known the river. However, opinions were consistently brought up that the standard of water source protection zone must be changed with using underground water as water source because of contribution possibility of underground water as the water source of Gwanin water intake facility. In this regard, hydrogeologic investigation including resistivity survey and hydrogeochemical investigation were carried out to assess water source and infiltration of contaminant for the plant. Quaternary basaltic rocks (50m thick with four layers) covered most of the study area on the granite basement. As the result of the resistivity survey, it is revealed that permeable aquifer is distributed in the boundary of two layers: the basaltic layer with low resistivity; and the granite with high resistivity. Considering of outflow from Gwanin water intake facility, the area possessing underground water was estimated at least $5.7km^2$. The underground water recharged from Cheorwon plain was presumed to outflow along the surface of unconformity plane of basalt and granite. Based on field parameters and major dissolved constituents, groundwater and river water clearly distinguished and the spring water was similar to groundwater from the basaltic aquifer. Temporal variation of $SiO_2$, Mg, $NO_3$, and $SO_4$ concentrations indicated that spring water and nearby groundwater were originated from the basaltic aquifer and other groundwater from granitic aquifer. In conclusion, the spring of the Gwanin water intake plant was distinguished from river water in terms of hydrogeochemical characteristics and mainly contributed from the basaltic aquifer.