• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.277-284
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• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under thermal chemical vapor deposition system. The Ni layer on the $SiO_2$ substrate was used as a catalyst for the formation of the carbon coils. The characteristics (formation densities, morphologies, and geometries) of the as-grown carbon coils on the substrate with or without the $H_2$ plasma pretreatment process were investigated. By the relatively short time (1 minute) $H_2$ plasma pretreatment on the Ni catalyst layered-substrate prior to the carbon coils synthesis reaction, the dominant formation of the carbon microcoils on the substrate could be achieved. After the relatively long time (30 minutes) $H_2$ plasma pretreatment process, on the other hand, we could obtain the noble-shaped geometrical nanostructures, namely the formation of the numerous carbon nanocoils along the growth of the carbon microcoils. This noble-shaped geometrical nanostructure seemed to play a promising role as the good catalyst support for holding the very tiny Ni catalyst grains.

• Bulletin of the Korean Chemical Society
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• v.25 no.9
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• pp.1371-1378
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• 2004

A porous stainless steel (SUS) as a substrate of silica composite membranes for hydrogen purification was used to improve mechanical strength of the membranes for industrial application. The SUS support was successfully modified by using submicron Ni powder, $SiO_2$ sols with particle size of 500 nm and 150 nm in turns. Silica top layer was coated on the modified supports under various preparation conditions such as calcination temperature, dipping time and repeating number of dipping-drying process. The calcination temperature for proper sintering was between H ttig temperature and Tamman temperature of the coating materials. Maximum hydrogen selectivity was investigated by changing dipping time. As repeating number of dipping-drying process increased, permeances of nitrogen and hydrogen were decreased and $H_2/N_2$ selectivity was increased due to the reduction of non-selective pinholes and mesopores. For the silica membrane prepared under optimized conditions, permeance of hydrogen was about $3\;{\times}\;10^{-5}\;cm^3{\cdot}cm^{-2}{\cdot}s^{-1}{\cdot}cmHg^{-1}$ combined with $H_2/N_2$ seletivity of about 20.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.18-23
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• 2009

The effect of hydrogen-nitrogen annealing on the interface trap properties of Metal-Oxide-Nitride-Oxide-Silicon (MONOS) capacitors is investigated by analyzing the capacitors' gate leakage current and the interface trap density between the Si and $SiO_2$ layer. MONOS samples annealed at $850^{\circ}C$ for 30 s by rapid thermal annealing (RTA) are treated by additional annealing in a furnace, using annealing eases $N_2$ and 2% hydrogen and 98% nitrogen gas mixture $(N_2-H_2)$ at $450^{\circ}C$ for 30 mins. Among the three samples as-deposited, annealed in $N_2$ and $N_2-H_2$, MONOS sample annealed in an $N_2-H_2$ environment is found to have the lowest increase of interface-trap density from the capacitance-voltage experiments. The leakage current of sample annealed in $N_2-H_2$ is also lower than that of sample annealed in $N_2$.

• The Journal of Korean Academy of Prosthodontics
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• v.43 no.5
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• pp.684-693
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• 2005

Statement of problem: Ti-6Al-7Nb alloy is used instead of Ti-6Al-4V alloy that was known to have toxicity. Purpose: This study was performed to investigate the effect of electrolyte concentration on the surface characteristics of anodized and hydrothermally-treated Ti-6Al-7Nb alloy Materials and methods: Discs of Ti-6Al-7Nb alloy of 20 mm in diameter and 2 mm in thickness were polished sequentially from #300 to 1,000 SiC paper ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. Anodizing was performed at current density $30mA/cm^2$ up to 300 V in electrolyte solutions containing $\beta-glycerophosphate$ disodium salt hydrate $(\beta-GP)$ and calcium acetate (CA). Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. All samples were soaked in the Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 30 days. Results and conclusion: The results obtained were summarized as follows: 1. After hydrothermal treatment, the precipitated HA crystals showed the dense fine needle shape. However, with increasing the concentration of electrolyte they showed the shape of thick and short rod. 2. When the dense fine needle shape crystals was appeared after hydrothermal treatment, the precipitation of HA crystals in Hanks' solution was highly accelerated. 3. The crystal structures of $TiO_2$ in anodic oxide film were composed of strong anatase peak and weak rutile peak as analyzed with thin-film X-ray diffractometery. 4. The Ca/P ratio of the precipitated HA layer was equivalent to that of HA crystal in Hanks' solution.

• Journal of the Korean Wood Science and Technology
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• v.28 no.4
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• pp.41-50
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• 2000

Cement-bonded particleboard is being used as outdoor siding material all over the world, because this composite particularly bears a light weight, high resistance against fire, decay, and crack by cyclic freezing and thawing, anti-shock property, and strength enhancement. Construction systems are currently changing into a frame-building style and wooden houses are being constructed with prefabrication type. Therefore, they require a more durability at outdoor-exposed sides. In this study, the cement hydration property for Korean pine particle, Japanese larch particle and face- and middle layer particles (designated as PB particle below) used in Korean particleboard-manufacturing company was investigated, and the rapid manufacturing characteristics of cement-bonded particleboard by supercritical $CO_2$ curing was evaluated. Korean pine flour showed a good hydration property, however, larch flour showed a bad one. PB particle had a better hydration property than larch flour. The addition of $Na_2SiO_3$ indicated a negative effect on hydration, however, $MgCl_2$ had a positive one. Curing by supercritical $CO_2$ fluid gave a conspicuous enhancement in the performances of cement-bonded particleboards compared to conventional curing. $MgCl_2$ 3%-added PB particle had the highest properties, and $MgCl_2$ 1%-added Korean pine particle had the second class with the conditions of cement/wood ratio of 2.7, a small fraction-screened particle and supercritical curing. On the contrary, the composition of non-hammermilled or large fraction-screened particle at cement/wood ratio of 2.2 was poorer. Also, the feasibility for actual use of 3%-added, small PB particle-screened fraction was greatest of all the conventional curing treatments. Relative superiority of supercritical curing vs. conventional curing at dimensional stability was not so apparent as in strength properties. Through the thermogravimetric analysis, it was ascertained that the peak of a component $CaCO_3$ was highest, and the two weak peaks of calcium silicate hydrate and ettringite and $Ca(OH)_2$ were present in supercritical treatment. Accordingly, it was inferred that the increased formation of carbonates in board contributes to strength enhancement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.7-11
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• 2022

Recently, Hanmi Gemological Institute & Laboratory (HGI) had an opportunity to examine 5 transparent synthetic moissanite. The round brilliants ranged from 0.93 to 0.96 ct and had a colorless, pink, yellow, blue, and red color. Advanced testing results, including Fourier-transform infrared (FTIR) and Raman spectroscopy, identified all the specimens as synthetic moissanite. Under the microscope, all samples except the colorless were confirmed to be a synthetic moissanite coated with a colored film. EDXRF chemical analysis detected very weak X-ray fluorescence peak characteristics of Ca, Ti, and Co in the colored samples. These features were not detected in the colorless sample. Raman spectroscopy investigation was unable to detect the 1332 cm^-1 (produced by sp³ bonding of carbon atoms) or the ~1550 cm^-1 (produced by graphite-related sp² bonding) peak in the colorless sample. The SEM image of the colorless sample showed no indication of a coating. The TEM image of the colorless sample revealed the presence of a 3~8 nm thick layer on the moissanite. Moreover, from the corresponding STEM Z-contrast image combined with the energy-dispersive X-ray spectroscopy (EDX) line profiles and EDX elemental maps, this layer was estimated to be carbon, silicon and oxygen.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.156-156
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• 2000

Recently, the surface electronic states have attracted much attention since their standing wave patterns created around steps, defects, and adsorbates on noble metal surfaces such as Au(111), Ag(110), and Cu(111) were observed by scanning tunneling microscopy (STM). As a typical example, a striking circular pattern of "Quantum corral" observed by Crommie, Lutz, and Eigler, covers a number of text books of quantum mechanics, demonstrating a wavy nature of electrons. After the discoveries, similar standing waves patterns have been observed on other metal and demiconductor surfaces and even on a side polane of nano-tubes. With an expectation that the surface states could be utilized as one of ideal cases for studying two dimensionakl (sD) electronic system, various properties, such as mean free path / life time of the electronic states, have been characterized based on an analysis of standing wave patterns, . for the 2D electron system, electron density is one of the most importnat parameters which determines the properties on it. One advantage of conventional 2D electron system, such as the ones realized at AlGaAs/GaAs and SiO2/Si interfaces, is their controllability of the electrondensity. It can be changed and controlled by a factor of orders through an application of voltage on the gate electrode. On the other hand, changing the leectron density of the surface-state 2D electron system is not simple. On ewqy to change the electron density of the surface-state 2D electron system is not simple. One way to change the electron density is to deposit other elements on the system. it has been known that Pd(111) surface has unoccupied surface states whose energy level is just above Fermi level. Recently, we found that by depositing Pd on Cu(111) surface, occupied surface states of Cu(111) is lifted up, crossing at Fermi level around 2ML, and approaches to the intrinsic Pd surface states with a increase in thickness. Electron density occupied in the states is thus gradually reduced by Pd deposition. Park et al. also observed a change in Fermi wave number of the surface states of Cu(111) by deposition of Xe layer on it, which suggests another possible way of changing electron density. In this talk, after a brief review of recent progress in a study of standing weaves by STM, I will discuss about how the electron density can be changed and controlled and feasibility of using the surface states for a study of 2D electron system. One of the most important advantage of the surface-state 2D electron system is that one can directly and easily access to the system with a high spatial resolution by STM/AFM.y STM/AFM.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.39-46
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• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.293-299
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• 2010

Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.