• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.62.2-62.2
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• 2011

산업화 이후, 석탄 석유를 중심으로 한 화석연료가 이산화탄소를 대량으로 배출하며 지구 온난화를 야기함에 따라, 기존의 화석연료를 대체할 청정하고 무한 재생 가능한 대체에너지로 가장 큰 기대를 받고 있는 것은 태양에너지이며, 이에 보조를 맞춰 태양광발전에 대한 연구개발이 국내외적으로 활발히 진행되고 있는 실정이다. 태양 전지는 빛 에너지를 직접 전기 에너지로 바꿔주는 소자로, 셀의 효율을 높이기 위해서는 최대한 많은 빛을 흡수시킬 수 있는 것이 중요하다. 빛의 반사를 줄이는 방법에는 texturing과 antireflecting coating이 있다. Antireflecting coating은 반도체와 공기의 중간 굴절율을 갖는 박막을 증착하여 측면 반사를 감소시킴으로서 빛의 손실을 감소시키는 역할을 한다. 과거에 반사방지막으로 가장 많이 사용되었던 물질은 SiO로써 굴절률은 1.8~1.9로서 최소의 반사율은 1% 미만이지만, 가시광선영역에서의 흡수에 의한 손실이 생기므로, SiNx가 대체 물질로 제안되었다. SiNx의 경우 굴절률이 약 1.5로서 Si에 쉽게 형성시킬 수 있고, texturing된 Si 표면에 적합하며 반사율을 10%에서 2%로 줄일 수 있는 장점을 가지고 있다. 따라서 본 연구에서는 high power, high frequency PECVD 방법으로 $SiH_4$와 $NH_3$ gas의 비율, $N_2$ carrier gas 등 공정 변수를 변화시켜 증착한 SiNx 박막의 결정학적 특성을 X-ray diffraction 분석과 XPS (X-ray photoelectron spectroscopy)를 통해 화학적 결합을 확인하였고, 이를 FT-IR (Fourier Transform-Infrared spectroscopy)를 통해 관찰한 결과와 연관시켜 분석하였다. 굴절율의 경우 ellipsometer를 이용하여 측정하였으며 위의 측정을 통하여 SiNx박막의 반사 방지막으로써의 가능성을 확인 하였다.

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3299-3302
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• 2014

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.9
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• pp.1296-1299
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• 2012

$YBa_2Cu_3O_{7-x}$ thin films were fabricated by the spin-coating method on $SiO_2$/Si substrate using an alkoxide-based sol-gel method. The structural and electrical properties were investigated for various 1st annealing temperature. Due to the formation of the polycrystalline single phase, synthesis temperature was observed at around $720^{\circ}C-800^{\circ}C$. $YBa_2Cu_3O_{7-x}$ thin films with the 1st annealing temperature of $450^{\circ}C{\sim}500^{\circ}C$ showed the single XRD patterns without the second phase, such as $YBa_2Cu_4O_8$. The thickness of films was approximately $0.23{\mu}m{\sim}0.27{\mu}m$. Aerage grain size, resistance and temperature coefficient of resistance (TCR) of $YBa_2Cu_3O_{7-x}$ thin films with the 1st annealing temperature of $500^{\circ}C$ were $0.27{\mu}m$, $59.7M{\Omega}$ and -3.7 %/K, respecvitely.

• Journal of the Korean Society of Industry Convergence
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• v.27 no.2_2
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• pp.371-375
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• 2024

Epoxy resins are widely used in various fields due to their high adhesion, mechanical strength, and solvent resistance. However, as the volume decreases during the hardening process and the cooling process after hardening, stress is generated and when an external force is applied, the brittle material exhibits destruction behavior. To complement this, research has been conducted using inorganic nanofillers such as halloysite nanotube(HNT). HNT has a nanotube structure with the chemical formula of Al₂Si₂O₅(OH)₄·nH₂O and is a natural sediment of aluminosilicate. It has been used as additive to improve the mechanical properties of epoxy composites with exchange of amine group as a terminal functional group. In order to simplify complicated procedures of common wet method, a dry coating machine was designed and used for amine group exchange in previous research. In this study, they were applied as filler in epoxy composites, and mechanical properties such as tensile strength and flexural strength of composites were examined.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.514-520
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• 1999

Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.440-446
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• 1997

This research has been performed for the fabrication of high quality ferrite plastic magnet. The magnetic properties of S $r_{5.9}$F $e_2$ $O_3$ ferrite bonded magnets by injection moulding with a variety of applied magnetic field were investigated. 0.3wt% CaCO3, 0.2wt% $SiO_2$, 0.5wt% $Al_2$ $O_3$and 0.5wt% N $a_2$ $SiO_3$are added in order to improve the magnetic properties of Sr-ferrite plastic magnets during the powder fabrication. For carbon coating on chemical compound specimen, 5wt% polyvinyl alcohol is added, and then calcinated under $N_2$ environment of 12$25^{\circ}C$. The particle size is distributed from 0.9~1.2${\mu}{\textrm}{m}$ which approximates to the single domain. The obtained Sr ferrite powder is well mixed with silane coupling and calcium stearate of 1wt%. Nest, the specimen is pelleted after kneading each of them with polyamidel2 as a binder. When the temperature of injection and mould were 25$0^{\circ}C$ and 8$0^{\circ}C$ respectively at injection pressure of 200kgf/$\textrm{cm}^2$, the degree of orientation was 85.3% under the applied magnetic field of 12kOe. As the results, when the packing density of Sr ferrite powder was 90wt%, the magnetic properties of Sr ferrite bonded magnet were follows : $_{B}$ $H_{c}$=2.41kOe, Br=3.1kG, (BH)$_{max}$=2.21MgOe. Especially, the Sr-ferrite bonded magnet with 10wt% N $d_2$F $e_{14}$B additive were as follows : $_{B}$ $H_{c}$=2.57kOe, Br=3.14kG and (BH)$_{max}$=2.39MGOe.GOe.GOe.GOe.e.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.12
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• pp.6980-6985
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• 2014

A micro-conductive pattern was fabricated on an insulating substrate ($SiO_2$) surface using a laser direct writing method. In the LIFT process, when the laser beam irradiates a thin metal film, the photon energy is absorbed by the film and converted to thermal energy, and the thermal decomposition reaction produced by the resulting heat conduction forms a deposit on the substrate. The resistivity of the micro-electrodes deposited through LIFT process with and without polymer coating was measured. The results showed that the electric conductivity of the micro-pattern and micro-structure can be increased approximatly two times when the deposited micropattern is fabricated through a LIFT process with a polymer coating, compared to the case without a polymer coating.

• Journal of the Korean Graphic Arts Communication Society
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• v.18 no.1
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• pp.47-58
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• 2000

Transmittances of SiO2 and ZrO2 thin films, made by the electron beam evaporation method, were measured with a spectrophotometer to be used in determining their optical constants and thicknesses in the envelop method. New color glass lenses with high transmittance, which now can be manufactured in the industry, was successfully designed by using these constants. Also the vacuum evaporator could be mechanically corrected with these constants as correction factors.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.187-188
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• 2007

Four kinds of mirror substrates with same surface roughness were fabricated. On those substrates, a dielectric multi-layer coating with high reflectivity was deposited by ion beam sputtering technique. Most of the fused silica mirrors showed lower scattering than the ZERODUR mirrors one, which deposited on substrates similar in surface roughness. The ZERODUR mirrors scattering strongly depend on the micro-structure of $Ta_2O_5/SiO_2$ thin films wear deposited on ZERODUR substrates.