• Advances in concrete construction
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• 제14권1호
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• pp.1-13
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• 2022

Due to the physical-chemical characteristics of some bottom ash (BA), there are technical, economic and environmental limitations to find a destination that will add value to it. In Brazil, this residue is eventually used for filling coal extraction pits or remains in sedimentation ponds, creating a susceptible panorama to environmental issues. The geopolymers binders are one of the alternatives to the proper use high amounts of these materials. In this work, geopolymeric binder pastes were produced with BA mixed to activators with different alkali contents (expressed as %Na₂O), as well as the incorporation of soluble silicates (Ms content). The production of binary geopolymeric pastes based on the use of two industrial wastes: fluid catalytic cracking (FCC) and aluminum anodizing sludge (AAS), was also assessed. The content in mass of BA/FCC and BA/AAS ranged from 100/0, 90/10; 80/20 and 70/30. Systems with soluble silicates as activator in a molar ratio SiO₂/Na₂O of 1.0 (Ms = 1.0) and Na₂O content of 15%, showed the best results of mechanical strength (42 MPa at day 28^th). The improvement is up to 5X when compared to NaOH based systems. For systems with partial replacement of BA of 10% of AAS and 20% of FCC (80/20), the presence of soluble silicates was also effective to increase compressive strength.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• 한국진공학회지
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• 제19권1호
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• pp.14-21
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• 2010

Ge은 Si에 비하여 높은 이동도를 갖기 때문에 차세대 고속 metal oxide semiconductor field effect transistors (MOSFETs) 소자를 위한 channel 물질로서 각광받고 있다. 그러나 화학적으로 안정한 게이트 산화막의 부재는 MOS 소자에 Ge channel의 사용에 주요한 장애가 되어왔다. 특히, Ge 기판 위에 고품질의 계면 특성을 갖는 게이트 절연막의 제조는 필수 요구사항이다. 본 연구에서, $HfO_xN_y$ 박막은 Ge 기판 위에 플라즈마 원자층 증착법(plasma-enhanced atomic layer deposition, PEALD)을 이용하여 증착되었다. 플라즈마 원자층 증착공정 동안에 질소는 질소, 산소 혼합 플라즈마를 이용한 in situ 질화법에 의하여 첨가되었다. 산소 플라즈마에 대한 질소 플라즈마의 첨가로 성분비를 조절함으로써 전기적 특성과 계면 성질을 향상시키는데 초점을 맞추어서 연구를 진행하였다. 질소 산소의 비가 1：1이었을 때, EOT의 값의 10% 감소를 갖는 고품질의 소자특성을 보여주었다. X-ray photoemission spectroscopy (XPS)와 high resolution transmission electron microscopy (HR-TEM)를 사용하여 박막의 화학적 결합 구조와 미세구조를 분석하였다.

• Journal of Yeungnam Medical Science
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• 제34권1호
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• pp.43-54
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• 2017

Background: Extracellular sulfatases (Sulfs), sulfatase 1 (Sulf1) and sulfatase 2 (Sulf2), play a pivotal role in cell signaling by remodeling the 6-O-sulfation of heparan sulfate proteoglycans on the cell surface. The present study examined the effects of Sulfs on angiotensin II (Ang II)-induced hypertensive mediator expression and vascular smooth muscle cells (VSMCs) proliferation in spontaneously hypertensive rats (SHR). Methods: Ang II receptors, 12-lipoxygenase (12-LO), and endothelin-1 (ET-1) messenger RNA (mRNA) expressions in SHR VSMCs were analyzed by real-time polymerase chain reaction and Western blotting. VSMCs proliferation was determined by [$^3H$]-thymidine incorporation. Results: Basal Sulfs mRNAs expression and enzyme activity were elevated in SHR VSMCs. However, Sulfs had no effect on the basal or Ang II-induced 12-LO and ET-1 mRNA expression in SHR VSMCs. The inhibition of Ang II-induced 12-LO and ET-1 expression by blockade of the Ang II type 2 receptor ($AT_2\;R$) pathway was not observed in Sulf1 siRNA-transfected SHR VSMCs. However, Sulf2 did not affect the action of $AT_2\;R$ inhibitor on Ang II-induced 12-LO and ET-1 expression in SHR VSMCs. The down-regulation of Sulf1 induced a reduction of $AT_2\;R$ mRNA expression in SHR VSMCs. In addition, the inhibition of Ang II-induced VSMCs proliferation by blockade of the $AT_2\;R$ pathway was mediated by Sulf1 in SHR VSMCs. Conclusion: These findings suggest that extracellular sulfatase Sulf1 plays a modulatory role in the $AT_2\;R$ pathway that leads to an Ang II-induced hypertensive effects in SHR VSMCs.

• 한국재료학회지
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• 제2권2호
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• pp.110-118
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• 1992

형성방법이 다른 세종류의 TiN기판상에 CVD텅스텐막을 도포할 때의 W의 핵생성 양상을 비교조사하여 다음과 같은 결과를 얻었다. 반응성 스팟터법에 의하여 형성한 TiN과 $NH_3$분위기에서 RTP처리한 $SiH_4$환원에 의하여 CVD-W막을 증착할 때, 증착속도(deposition rate)는 sputtered TiN>RTP TiN>annealed TiN의 순서로 감소하며, W 핵생성에 대한 잠복기는 sputtered $TiN{\leq}RTP$ TiNTiO_{X}N_{Y}$로 바뀌기 때운에 그 위에서 W의 핵성성이 어려워지고, 증착속도도 낮아진 것이다. RTP-TiN의 미세한 결정립구조는 W의 핵성성과 성장에 유리한 효과를 미치지만, 그것의 높은 압축응력이 W의 핵생성과 성장에 미치는 불리한 효과가 더 크기 때문에, RTP-TiN 기판상에 W를 증착할 경우가 sputtered TiN 기판상에 W를 증착할 경우보다 증착속도가 더 낮고, 잠복기도 더 긴 것으로 사료된다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.308-308
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• 2012

Electrodeposition of thermoelectric materials, including binary and ternary compounds, have been attracting attentions, because its many advantages including cost-effectiveness, rapid deposition rate, and ease of control their microstructure and crystallinity by adjusting electrodeposition parameters. In this work, $Bi_xTe_y$ films were potentiostatically electrodeposited using Au/Ni(80/20 nm)/Si substrate as the working electrode in solutions consisting of 10mM $TeO_2$ and 1M $HNO_3$ where $Bi(NO_3)_3$ was varied from 2.5 to 10 mM. Prior to electrodeposition potentiostatically, linear sweep voltammograms (LSV) were acquired with a standard three-electrode cell. The $Bi_xTe_y$ films deposited using the electrolyte containing low Bi ions shows p-type conductivity, which might be attributed by the large incorporation of Te phases. Near stoichiometric $Bi_2Te_3$ thin films were obtained from electrolytes containing 5mM $Bi(NO_3)_3$. This film shows the maximum Seebeck coefficient of $-100.3{\pm}12.7{\mu}V/K$. As the increase of Bi ions in electrolytes decreases the Seebeck coefficient and resistivity. The maximum power factor of $336.2{\mu}W/m{\cdot}K^2$ was obtained from the film deposited using the solution of 7.5mM $Bi(NO_3)_3$.

• 한국수소및신에너지학회논문집
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• 제22권3호
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• pp.386-401
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• 2011

Mathematical models for various steps in coal gasification reactions were developed and applied to investigate the effects of operation parameters on dynamic behavior of gasification process. Chemical reactions considered in these models were pyrolysis, volatile combustion, water shift reaction, steam-methane reformation, and char gasification. Kinetics of heterogeneous reactions between char and gaseous agents was based on Random pore model. Momentum balance and Stokes' law were used to estimate the residence time of solid particles (char) in an up-flow reactor. The effects of operation parameters on syngas composition, reaction temperature, carbon conversion were verified. Parameters considered here for this purpose were $O_2$-to-coal mass ratio, pressure of reactor, composition of coal, diameter of char particle. On the basis of these parametric studies some quantitative parameter-response relationships were established from both dynamic and steady-state point of view. Without depending on steady state approximation, the present model can describe both transient and long-time limit behavior of the gasification system and accordingly serve as a proto-type dynamic simulator of coal gasification process. Incorporation of heat transfer through heterogenous boundaries, slag formation and steam generation is under progress and additional refinement of mathematical models to reflect the actual design of commercial gasifiers will be made in the near futureK.

• 한국진공학회지
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• 제5권4호
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• pp.327-332
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• 1996

Tungsten(W) polycide gate 구조에서 $WSi_x$의 두께가 증가하면 열처리 공정 후 Gate oxide의 두께가 증가하며, 전기적 신뢰도가 열화 되는 현상이 발생한다. 이러한 특성 열화를 일으키는 지배적인 요인은 $WSi_x$ 증착 공정 중 유입되어 후속 열 공정에 의하여 gate oxide로 환산되는 fluorine인 것으로 밝혀졌다. 이러한 현상을 규명하기 위하여 fluorine ion implantation된 poly Si과의 특성을 비교하였으며, SIMS 및 단면 TEM을 이용한 미세 구조 연구를 실시하였다. 그러나 $WSi_x$의 두께가 600$\AA$ 이상부터는이러한 특성 열화가 포화되는 현상이 관찰되었다. 600$\AA$ 이상의 $WSi_x$ 두께에서는 미세 구조가 표면이 거칠고, porous한 phase로 구성된 상부 구조와 비교적 dense하고, 매끈한 계면 상태를 갖는 하부 구조로 이루어졌으며, porous한 표면 부위는 후속 열공정 중 oxygen-rich한 phase로 변하여 fluorine을 포획하여 oxide로의 확산을 억제하여 특성 열화가 포화되는 것으로 해석되었다.