• 대한화학회지
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• 제37권2호
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• pp.220-227
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• 1993

Lithiated 화합물인 $Cl_3$Si=$CHCH_2^tBu$로부터 LiCl의 제거반응에 의해 생성된 준안정 반응중간체인 Silaethene, $Cl_2$Si=$CHCH_2^tBu$은 propene, 2-methylpropene, 1,3-butadiene, 2,3-dimethyl-1,3-butadiene, anthracene과 반응하여 엔반응 생성물, 2 + 2-, 2 + 4- 고리화부가생성물을 생성한다. 이들을 분별진공증류법에 의해 분리하였고 분광학적으로 확인하였다.

• 한국재료학회지
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• 제18권2호
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• pp.92-97
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• 2008

In spray pyrolysis, the effects of the preparation temperature, flow rate of the carrier gas and concentration of the spray solution on characteristics such as the morphology, size, and emission intensity of $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders under long-wavelength ultraviolet light were investigated. The phosphor powders obtained post-treatment had a range of micron sizes with regular morphologies. However, the composition, crystal structure and photoluminescence intensity of the phosphor powders were affected by the preparation conditions of the precursor powders. The $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders prepared at temperatures that were lower and higher than $700^{\circ}C$ had low photoluminescence intensities due to deficiencies related to the of Cl component. The phosphor powders with the deficient Cl component had impurity peaks of $Ca_2SiO_4$. The optimum flow rates of the carrier gas in the preparation of the $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders with high photoluminescence intensities and regular morphologies were between 40 and 60 l/minute. Phosphor powders prepared from a spray solution above 0.5 M had regular morphologies and high photoluminescence intensities.

• 한국세라믹학회지
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• 제32권11호
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• pp.1246-1254
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• 1995

A numerical model for fabrication and deposition of ultrafine SiO2 particles were proposed in the simplified horizontal MCVD apparatus using tube furnace reactor. The model equations such as energy and mass balance equations and the 0th, 1st and 2nd moment balance equations of aerosols were considered in the reactor. The phenomena of SiCl4 chemical reaction, SiO2 particle formation and coagulation, diffusion and thermophoresis of SiO2 particles were included in the aerosol dynamic equation. The profiles of gas temperature, SiCl4 concentration and SiO2 particle volume were calculated for standard conditions. The concentrations, sizes and deposition efficiencies of SiO2 particles were calculated, changing the process conditions such as tube furnace setting temperature, total gas flow rate and inlet SiCl4 concentration.

• Journal of Electrochemical Science and Technology
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• 제14권4호
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• pp.326-332
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• 2023

The high cost of Si-based solar cells remains a substantial challenge to their widespread adoption. To address this issue, it is essential to reduce the production cost of solar-grade Si, which is used as raw material. One approach to achieve this is Si electrodeposition in molten salts containing Si sources, such as SiO₂. In this study, we present the pulse electrodeposition of Si in molten CaCl₂ containing SiO₂ nanoparticles. Theoretically, SiO₂ nanoparticles with a diameter of less than 20 nm in molten CaCl₂ at 850℃ have a comparable diffusion coefficient with that of ions in aqueous solutions at room temperature. However, we observed a slower-than-expected diffusion of the SiO₂ nanoparticles, probably because of their tendency to aggregate in the molten CaCl₂. This led to the formation of a non-uniform Si film with low current efficiency during direct current electrodeposition. We overcome this issue using pulse electrodeposition, which enabled the facile supplementation of SiO₂ nanoparticles to the substrate. This approach produced a uniform and thick electrodeposited Si film. Our results demonstrate an efficient method for Si electrodeposition in molten CaCl₂ containing SiO₂ nanoparticles, which can contribute to a reduction in production cost of solar-grade Si.

• 폴리머
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• 제39권1호
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• pp.169-173
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• 2015

3-Aminopropyltrimethoxysilane(1NS) 또는 N-[3-(trimethoxysilyl)propyl]ethylenediamine(2NS)으로 표면 기능화된 실리카에 1-butyl-4-methylpyridinium chloride(Cl)와 tributylmethylammonium chloride(Amm), benzyldimethyltetradecylammonium chloride(Ben), 1-butyl-1-methylpyrrolidinium chloride(Pyr)와 같은 이온성 액체를 이용하여 표면처리한 후 메탈로센 촉매를 담지하여 에틸렌 중합을 실시하였다. $SiO_2/1NS/IL/(n-BuCp)_2ZrCl_2$ 촉매와 $SiO_2/2NS/IL/(n-BuCp)_2ZrCl_2$ 촉매의 Zr 함량은 아미노실란 화합물로만 표면 처리된 촉매보다 감소하였다. $SiO_2/1NS/IL/(n-BuCp)_2ZrCl_2$ 촉매의 중합 활성은 $SiO_2/1NS/(n-BuCp)_2ZrCl_2$ 촉매보다 증가하였다. 반면, $SiO_2/2NS/IL/(n-BuCp)_2ZrCl_2$은 Zr 함량의 감소로 중합 활성은 $SiO_2/2NS/(n-BuCp)_2ZrCl_2$ 촉매에 비해 감소하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
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• pp.143-143
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• 1992

• Bulletin of the Korean Chemical Society
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• 제21권10호
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• pp.959-968
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• 2000

Direct reaction of elemental silicon with a mixture of (dichloromethyl)silanes 1 $[Cl_3-nMenSiCHCl_2:$ n = 0 (a), n = 1(b), n = 2(c), n = 3(d)] and hydrogen chloride has been studied in the presence of copper catalyst using a stirred bed reactor equ ipped with a spiral band agitator at various temperatures from $240^{\circ}C$ to $340^{\circ}C.$ Tris(si-lyl) methanes with Si-H bonds, 3a-d $[Cl_3-nMenSiCH(SiHCl_2)_2]$, and 4a-d $[Cl_3-nMenSiCH(SiHCl_2)(SiCl_3)]$, were obtained as the major products and tris(silyl)methanes having no Si-H bond, 5a-d $[Cl_3-nMenSiCH(SiCl_3)_2]$, as the minor product along with byproducts of bis(chlorosilyl)methanes, derived from the reaction of silicon with chloromethylsilane formed by the decomposition of 1. In addition to those products, trichlorosilane and tetra-chlorosilane were produced by the reaction of elemental silicon with hydrogen chloride. The decomposition of 1 was suppressed and the production of polymeric carbosilanes reduced by adding hydrogen chloride to 1. Cad-mium was a good promoter for and the optimum temperature for this direct synthesis was $280^{\circ}C$.

• Tribology and Lubricants
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• 제4권2호
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• pp.44-51
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• 1988

Titanium carbide(TiC), Titanium nitride(TiN), and Titanium carbonnitride(Ti(C,N)) films were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$, $TiCl_4-N_2-H_2$, and $TiCl_4-CH_4-N_2-H_2$ gas mixtures, respectively. The experimental results indicate that TiC coatings compared with TiN coatings on $Si_3N_4$ -TiC ceramic have an improved microstructural property, good thermal shock resistance, and good interfacial bonding. However TiN coatings compared with TiC coatings have a low friction coefficient with steel and good chemical stability. It is found by cutting test that coated insert compared with $Si_3N_4$-TiC ceramic have a superior flank and crater wear resistance. And multilayer coating compared with monolayer coating shows a improved wear resistance.

• 한국세라믹학회지
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• 제40권6호
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• pp.589-593
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• 2003

실리카 평판광회로는 다양한 광수동소자에 응용이 되고 있으며, 이를 구성하는 SiO$_2$와 GeO$_2$-SiO$_2$ 막은 화염가수분해증착에 의해 증착되었다. SiO$_2$ 막은 산-수소 토치에 SiCl$_4$, POC1$_3$와 BCl$_3$를 주입하여 화염가수반응에 의해 생성되었으며, POC1$_3$/BC1$_3$ 유량비가 증가함에 따라 P 농도는 2.0-2.8 at%까지 증가하였고, 굴절률은 1.4584-1.4605로 증가하였다. GeO$_2$-SiO$_2$ 막의 굴절률은 GeCl$_4$ 유량에 의해 제어되었으며 30-120 sccm으로 증가함에 따라 1.4615-1.4809로 증가하였다.

• 분석과학
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• 제15권1호
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• pp.87-90
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• 2002

The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 ％ in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.