• Journal of Industrial Technology
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• v.17
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• pp.233-239
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• 1997

The effects of preheating the gas stream on deposition characteristics of ultrafine $SiO_2$ particles were investigated theoretically. The model equations such as mass and energy balance equations and aerosol dynamic equations were solved to predict the particle growth and deposition. The gas temperatures, $SiCl_4$ concentrations, $SiO_2$ particle volumes, $SiO_2$ particle sizes and deposition efficiencies of $SiO_2$ particles were calculated for various preheating temperatures. As the preheater setting temperature increases, the $SiO_2$ particle size distribution becomes more uniform, because the effect of $SiCl_4$ diffusion decreases.

• Journal of radiological science and technology
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• v.20 no.1
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• pp.65-69
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• 1997

[ $Mg_2SiO_4(La.Ho)$ ] thermoluminescent phosphor was made by putting the $MgCl_2.6H_2O$ and $SiO_2$ and by doping the rare earth element of $LaCl_3.7H_2O$ and $HoCl_3$. The heating rate is $10^{\circ}C/sec$ for the thermoluminescent phosphor. Two peaks are found in the measured $Mg_2SiO_4(La.Ho)$ Tl glow curve at $152^{\circ}C$ and $205^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The peak value at $205^{\circ}C$ is the most sensitive to X-ray among the glow peaks. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies for Ho and La are $0.52{\sim}1.77\;eV$ respectively.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.512-518
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• 2001

It has been well known that 6.5wt% Si steel sheets have excellent magnetic properties such as low core loss. high maximum permeability and low magnetostriction. In this work, we studied a method for producing 6.5wt% Si steel sheets using a chemical vapor deposition (CVD) method. The following is the procedure adopted in this work to produce 6.5wt% Si steel sheets; SiCl$_4$ gas is applied onto a low content-Si steel sheet placed in a tube furnace. Silicon atoms resulted from the decomposition of SiCl$_4$ are permeated through the surface of the steel sheet. Finally, by the diffusion process maintaining it under a high temperature the silicon atoms diffuse uniformly into the sheet. Through this process, 6.5wt% Si steel sheets can be obtained. The manufactured Fe-6.5wt% Si steel sheet with a thickness of 0.5mm exhibited a high frequency core loss (W$_{2}$1k/) of 8.92 W/kg. Its permeability increased from 37,100 to 53,300 at 1 tesular(T). The mechanical properties of the manufactured steel sheets were also estimated and the result showed that the workability was significantly improved by annealing in vacuum at 773k. Increased plastic deformation was also observed prior to fracture and the amount of grain boundary rupture was reduced.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.46-47
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• 2002

Flame Hydrolysis Deposition (FHD) 공정은 SiC1$_4$, GeCl$_4$, POC1$_3$, BCl$_3$ 등의 원료를 사용하여 Si wafer 및 유리기판 위에 silicate soot를 증착하는 방법이며, 증착된 soot는 고온에서 소결과정을 거쳐 B$_2$O$_3$-P$_2$O$_{5}$ -GeO$_2$-SiO$_2$(BPGS)계 유리막으로 형성된다. 유리막의 굴절률은 SiC1$_4$, GeCl$_4$, POC1$_3$, BCl$_3$ 등의 원료 유량을 조절하여 변화가능하며 이를 이용하여 광도파로를 제작할 수 있다 특히 광통신에 사용할 수 있는 광증폭기 등의 능동형 광소자 제작을 위해서는 FHD공정을 통해 형성된 soot에 Er$^{3+}$ 등의 희토류 원소를 첨가하여야 한다. (중략)

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.850-855
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• 2002

Silica powders were prepared from $SiCl_4$-$H_2$O system by chemical vapor deposition process, and investigated on size control of the products with reaction conditions. The products were amorphous and nearly spherical particles with 130nm~50nm in size. The size distribution became narrow with the increase of [$H_2$O]/[SiCl$_4$] concentration ratio. The particle size decreased with the increase of reaction temperature, [$H_2$O]/[SiCl$_4$] concentration ratio and total flow rate. The specific surface area measured by BET method was about three times larger than that of electron microscope method.

• Korean Chemical Engineering Research
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• v.45 no.6
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• pp.677-679
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• 2007

Nearly monodisperse spherical silica particles, 200~300 nm in diameter, were produced via a dry route for the first time through a two-stage hydrolysis of $SiCl_4$ vapor. In the first stage, the $SiCl_4$ was partially hydrolyzed in a batch reactor at $150^{\circ}C$ to form nearly monodisperse silicon oxychloride particles. In the second stage, the oxychlorides were hydrolyzed further in a tubular reactor to have produced silica with the morphology and size nearly conserved.

• Journal of the Korean Electrochemical Society
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• v.4 no.1
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• pp.6-9
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• 2001

[ $SiO_2$ ] effect on the electrochemical properties of polymeric gel electrolytes(PGEs) reinforced with glass fiber cloth(GFC) was investigated . PGEs were composed of polyacrylronitrile(PAN), poly(vinylidenefluoride-co-hexafluoropropylene) (P(VdF-co-HFP)), $LiClO_4$ and three kind of plasticizer(ethylene carbonate, dietyl carbonate, propylene carbonate). $SiO_2$ was added to PGEs in the weight fraction of 10, 20, $30\%$ respectively. PGEs containing $SiO_2$ showed conductivity of over $10^{-3}S/cm\;at\;23^{\circ}C$ and electrochemical stability window to 4.8V. In the impedance spectra of the cells, which were constructed by lithium metals as electrodes, interfacial resistance increased due to growth of passivation layer during storage time and remarkable difference was not observed with content of $SiO_2$. In the impedance spectra of the lithium ion polymer batteries consisted of $LiClO_2$ and mesophase pitch-based carbon fiber(MCF), ohmic cell resistance of $SiO_2-free$ PGE was changed continuously with number of cycle, but those of $SiO_2-dispersed$ PGEs were not. Discharge capacity of the PGE containing $20wt\%\;SiO_2$ showed 132 mAh/g at 0.2C rate and $85\%$ of discharge capacity was retained at 2C rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.1-211.1
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• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1078-1084
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• 2006

Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.

• Journal of The Korean Society of Agricultural Engineers
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• v.62 no.4
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• pp.53-61
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• 2020

The laboratory model test was conducted by dividing domestic reclaimed tideland into Sandy Loam (SL) and Silt Clay Loam (SiCL) to estimate soil moisture change and water supply according to soil characteristic when establishing irrigation plan for reclaimed tideland upland crop. In addition, the applicability of each scenario was verified using Van Genuchten model, which is the most widely used mathematical model for analyzing soil moisture characteristics of reclaimed tideland uplands crops. The required water supply according to the target soil moisture tension by reclaimed tideland is as follow. In the case of SL, soil depths of 0~10 cm, 10~20 cm were analyzed as 19 mm, 35 mm to reach the field capacity, and SiCL, 33 mm, 63 mm. The required water supply of SiCL was higher than that of SL. The study compared the simulation results from the scenarios of Van Genuchen model and the measured results from the laboratory model test based on according to the reclaimed tidelands. In the case of parameter, θ_s, θ_r, α, η were analyzed 0.55, 0.18, 0.064, 1.74 in SL and 0.46, 0.22, 0.105, 1.92 in SiCL. In terms of soil characteristics, SL with better water permeability was found to have higher applicability than SiCL. By Soil depth, applicability was found in 0~10 cm directly affected by water supply.