• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.25-28
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• 2001

In this paper, we have investigated the effects of gas flow rate, rf power, process pressure and Ar addition on reactive ion etching of InP, InGaAs and InAlAs using Sic14 and Cl$_2$ gases. The etch rates were measured by using a surface profiler. The etched profiles, sidewall roughness, and surface morphology were observed by scanning electron microscopy and by atomic force microscopy. The selective etching of InGaAs to InP and InAlAs was studied by varying the etching parameters. It was found that Cl$_2$ gas is more efficient for the selective etching of InGaAs to InAlAs than SiCl$_4$ gas. The etch selectivity of InGaAs to InAlAs is strongly dependent on the rf power and the process pressure.

• Applied Chemistry for Engineering
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• v.29 no.4
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• pp.461-467
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• 2018

In this study, $(n-BuCp)_2ZrCl_2$, was supported on $SiO_2/MgCl_2$ binary support. Before supporting the catalyst, the $SiO_2/MgCl_2$ binary support was surface treated with three different alkyl aluminum compound, namely trimethylaluminum, triethylaluminum, and ethylaluminum sesquichloride. The synthesized surface-treated $SiO_2/MgCl_2$ supported metallocene catalysts were used for the copolymerization of ethylene and 1-hexene. Their catalytic properties and performances were analyzed through BET, XPS analysis, ICP-AES analysis, and FE-SEM. While the resulting copolymers were analyzed through DSC analysis, GPC analysis, 13C-NMR analysis, and FE-SEM. The analysis of synthesized surface-treated $SiO_2/MgCl_2$ supported metallocene catalysts showed that the Zr content of these catalysts is relatively lower compared to that of the catalyst supported on $SiO_2$. This could be attributed to the reduction in the surface area of $SiO_2$ due to the presence of recrystallized $MgCl_2$ and alkyl aluminum. Furthermore, they exhibited a better copolymerization activity compared to that of $SiO_2$ supported catalyst, particularly the EASC-surface treated binary support, which has the highest activity of 1.9 kg PE/($mmol-Zr^*hr$) because EASC acts as a strong Lewis acid. It could also be observed that the larger the ligand of alkyl aluminum used, the rougher the particle surface of the resulting polymer.

• Bulletin of the Korean Chemical Society
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• v.11 no.1
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• pp.1-7
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• 1990

We present a theoretical investigation on the etching of an Al solid by $SiCl_4$ molecules at a collision energy of 600 eV. The classical trajectory method is employed to calculate Al etching yields, degree of anisotropy, kinetic energy distribution and angular distribution. The calculated results are compared with the reaction of a Cu solid by $SiCl_4$. The major products of the reaction are aluminum monomers and dimers together with considerable quantities of multimers. The Al solid shows better etching yield and better anisotropy than the Cu solid. This is consistent with the problem in the CMOS micro-fabrication of the CuAl and CuAlSi alloys. The relevance of these calculations for the dry etching of CuAl alloy is discussed.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1221-1224
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• 2013

The atomic layer deposition (ALD) of $ZrO_2$ was conducted in ultrahigh vacuum (UHV) conditions. The surface was exposed to $ZrCl_4$ and $H_2O$ in sequence and the surface species produced after each step were identified in situ with X-ray photoelectron spectroscopy (XPS). $ZrCl_4$ is molecularly adsorbed at 140 K on the $SiO_2$/Si(111) surface covered with OH groups. When the surface is heated to 300 K, $ZrCl_4$ loses two Cl atoms to produce $ZrCl_2$ species. Remaining Cl atoms of $ZrCl_2$ species can be completely removed by exposing the surface to $H_2O$ at 300 K followed by heating to 600 K. The layer-by-layer deposition of $ZrO_2$ was successfully accomplished by repeated cycles of $ZrCl_4$ dosing and $H_2O$ treatment.

• Korean Chemical Engineering Research
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• v.51 no.3
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• pp.407-410
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• 2013

The chlorination of a metallurgical-grade silicon was carried out in a fluidized bed reactor, 25 mm in diameter. The flow rate of the chlorine admitted into the reactor was 0.2 L/min and that of the carrier nitrogen was 0.8~1.0 L/min. The reactor temperature was maintained at $450^{\circ}C$ and the temperature of the coolant at the $SiCl_4$ condenser was at $-5^{\circ}C$. The $SiCl_4$ yield increased with increasing the mole fraction of chlorine in the feed gas, exhibiting 28% at the mole fraction of 0.2. Further increase of the chlorine mole fraction was not attempted in a worry that the reactor might be failed due to the high exothermicity of the reaction. The production of $SiCl_4$ from silicon by fluidized bed chlorination was demonstrated on a laboratory scale, which is a stepping stone for future studies under more severe conditions toward industrial application.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.11
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• pp.1464-1469
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• 2000

The effects of SiCl$_4$addition on flame structures have been studied in flame hydrolysis deposition (FHD) processes using Coherent anti-Stokes Raman spectroscopy (CARS) and planar laser induced fluorescence (PLIF) to measure temperatures and OH concentrations, respectively. The results demonstrate that even a small amount of SiCl$_4$ addition can change thermal and chemical structures of H$_2$/O$_2$ diffusion flames. When SiCl$_4$ is added to a flame temperature decreases in non-reacting zone due to the increases in both specific heat and density of the gas mixture, while flame temperature increase in particle formation zone due to the heat release through hydrolysis and oxidation reactions of SiCl$_4$. It is also found that OH concentration decreases dramatically in particle formation zone where temperatures increase. This can be attributed to consumption of oxidative species and generation of HCl during silica formation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.109-110
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• 2008

We have performed a density functional theory study to investigate the reaction of the $HfCl_4$ molecule on $H_2O$ terminated Si (001)-$(2\times1)$ surface. The reaction of the $HfCl_4$ molecule is more favorable on OH-terminated site than H-terminated site. The first $HfCl_4$ molecule is adsorbed on a OH-terminated site with 0.21 eV energy benefit. The second $HfCl_4$ molecule is adsorbed on the most adjacent OH-terminated site of the first molecule and the energy benefit is 0.28 eV. The third and forth molecules have same tendency with the first and second ones. The adsorption energies of the fifth and sixth $HfCl_4$ molecules are 0.01 eV, -0.06 eV respectively. Therefore, we find that the saturation Hf coverage is approximately 5/8 of the available hydroxyl site, which is $2.08\times10^{14}/cm^2$. Our model is well matched with an experimental study by reference.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.5
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• pp.670-677
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• 1999

An analysis of generation and growth of multicomponent particles has been carried out to predict the size and composition distributions of particles generated in the Modified Chemical Vapor Deposition(MCVD) process. In MCVD process. scale-up of sintering and micro-control of refractive index may need the Information about the size and composition distributions of $SiO_2-GeO_2$ particles that are generated and deposited. The present work solved coupled steady equations (axi-symmetric two dimensions) for mass conservation, momentum balance. energy and species(such as $SiCl_4$, $GeCl_4$, $O_2$, $Cl_2$) conservations describing fluid flow. heat and mass transfer in a tube. Sectional method has been applied to obtain multi-modal distributions of multicomponent aerosols which vary in both radial and axial directions. Chemical reactions of $SiCl_4$ and $GeCl_4$ were included and the effects of variable properties have also been considered.

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4079-4083
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• 2012

The mechanism of the cycloaddition reaction between singlet state dichlorosilylene germylidene ($Cl_2Si=Ge:$) and acetone has been investigated with B3LYP/6-$31G^*$ and B3LYP/6-$31G^{**}$ method, from the potential energy profile, we predict that the reaction has one dominant reaction pathway. The presented rule of the reaction is that the two reactants firstly form a Si-heterocyclic four-membered ring germylene through the [2+2] cycloaddition reaction. Because of the 4p unoccupied orbital of Ge atom in the Si-heterocyclic four-membered ring germylene and the ${\pi}$ orbital of acetone forming a ${\pi}{\rightarrow}p$ donor-acceptor bond, the Si-heterocyclic four-membered ring germylene further combines with acetone to form an intermediate. Because the Ge atom in the intermediate hybridizes to an $sp^3$ hybrid orbital after the transition state, then, the intermediate isomerizes to spiro-heterocyclic ring compound involving Si and Ge (P4) via a transition state.

• Journal of Korean Society for Atmospheric Environment
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• v.13 no.4
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• pp.307-317
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• 1997

Samples of fine particle $(d_P<2.5 \mum)$ were taken in Chongju area using a dichotomous sampler. The data set was collected on fifty-eight different days with 24 hour sampling period from October 27, 1995 through August 25, 1996. The samples were analyzed using a proton induced x-ray emission (PIXE) for Na, Mg, Al, Si, S, Cl, K, Ca, Ti, V, Cr, M, Fe, Ni, Cu, Zn, Br and Pb. Values of Fe, Ca, Si, Cu, K and Cl exhibit marked seasonal variations. Mean concentrations for this study had the following order S > Cl > Si > K > Al > Fe on fine particle. Concentrations of Ca, Si and Fe were higher during the spring season compared with any other season. These phenomena may be attributable to soil dust. Cl and K were higher in the winter, which may be explained by combustion of fossil fuel. Higher values for Cu and Zn in the Winter may be due to the combustion and incineration.