• Journal of the Korean Chemical Society
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• v.37 no.2
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• pp.220-227
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• 1993

Silaethene $Cl_2$Si=$CHCH_2^tBu$, generated as a metastable reaction intermediate by the thermal eliminatio of LiCl from lithiated compound $Cl_2$Si=$CHCH_2^tBu$, react with propene, 2-methylpropene, 1,3-butadiene, 2,3-dimethyl-1,3-butadiene, and anthracene to give ene-reaction product, 2+2-, and 2+4-cycloadducts. They are isolated by vacuum fractional distillation method and spectroscopically identified.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.92-97
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• 2008

In spray pyrolysis, the effects of the preparation temperature, flow rate of the carrier gas and concentration of the spray solution on characteristics such as the morphology, size, and emission intensity of $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders under long-wavelength ultraviolet light were investigated. The phosphor powders obtained post-treatment had a range of micron sizes with regular morphologies. However, the composition, crystal structure and photoluminescence intensity of the phosphor powders were affected by the preparation conditions of the precursor powders. The $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders prepared at temperatures that were lower and higher than $700^{\circ}C$ had low photoluminescence intensities due to deficiencies related to the of Cl component. The phosphor powders with the deficient Cl component had impurity peaks of $Ca_2SiO_4$. The optimum flow rates of the carrier gas in the preparation of the $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders with high photoluminescence intensities and regular morphologies were between 40 and 60 l/minute. Phosphor powders prepared from a spray solution above 0.5 M had regular morphologies and high photoluminescence intensities.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1246-1254
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• 1995

A numerical model for fabrication and deposition of ultrafine SiO2 particles were proposed in the simplified horizontal MCVD apparatus using tube furnace reactor. The model equations such as energy and mass balance equations and the 0th, 1st and 2nd moment balance equations of aerosols were considered in the reactor. The phenomena of SiCl4 chemical reaction, SiO2 particle formation and coagulation, diffusion and thermophoresis of SiO2 particles were included in the aerosol dynamic equation. The profiles of gas temperature, SiCl4 concentration and SiO2 particle volume were calculated for standard conditions. The concentrations, sizes and deposition efficiencies of SiO2 particles were calculated, changing the process conditions such as tube furnace setting temperature, total gas flow rate and inlet SiCl4 concentration.

• Journal of Electrochemical Science and Technology
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• v.14 no.4
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• pp.326-332
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• 2023

The high cost of Si-based solar cells remains a substantial challenge to their widespread adoption. To address this issue, it is essential to reduce the production cost of solar-grade Si, which is used as raw material. One approach to achieve this is Si electrodeposition in molten salts containing Si sources, such as SiO₂. In this study, we present the pulse electrodeposition of Si in molten CaCl₂ containing SiO₂ nanoparticles. Theoretically, SiO₂ nanoparticles with a diameter of less than 20 nm in molten CaCl₂ at 850℃ have a comparable diffusion coefficient with that of ions in aqueous solutions at room temperature. However, we observed a slower-than-expected diffusion of the SiO₂ nanoparticles, probably because of their tendency to aggregate in the molten CaCl₂. This led to the formation of a non-uniform Si film with low current efficiency during direct current electrodeposition. We overcome this issue using pulse electrodeposition, which enabled the facile supplementation of SiO₂ nanoparticles to the substrate. This approach produced a uniform and thick electrodeposited Si film. Our results demonstrate an efficient method for Si electrodeposition in molten CaCl₂ containing SiO₂ nanoparticles, which can contribute to a reduction in production cost of solar-grade Si.

• Polymer(Korea)
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• v.39 no.1
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• pp.169-173
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• 2015

Metallocene was supported on the silica, which was functionalized with aminosilanes such as aminopropyltrimethoxysilane (1NS) or N-[3-(trimethoxysilyl)propyl]ethylenediamine (2NS), and ionic liquids such as 1-butyl-4-methylpyridinium chloride (Cl), tributylmethylammonium chloride (Amm), benzyldimethyltetradecylammonium chloride (Ben), 1-butyl-1-methylpyrrolidinium chloride (Pyr), and then ethylene polymerizations were performed. The Zr contents of $SiO_2/1NS/IL/(n-BuCp)_2ZrCl_2$ and $SiO_2/2NS/IL/(n-BuCp)_2ZrCl_2$ were lower than those of only aminosilane-treated silicas. However, the polymerization activity of $SiO_2/1NS/IL/(n-BuCp)_2ZrCl_2$ was higher than that of $SiO_2/1NS/(n-BuCp)_2ZrCl_2$. The polymerization activity of $SiO_2/2NS/IL/(n-BuCp)_2ZrCl_2$ was lower than that of $SiO_2/2NS/(n-BuCp)_2ZrCl_2$ due to much lower Zr content.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.143-143
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• 1992

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.959-968
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• 2000

Direct reaction of elemental silicon with a mixture of (dichloromethyl)silanes 1 $[Cl_3-nMenSiCHCl_2:$ n = 0 (a), n = 1(b), n = 2(c), n = 3(d)] and hydrogen chloride has been studied in the presence of copper catalyst using a stirred bed reactor equ ipped with a spiral band agitator at various temperatures from $240^{\circ}C$ to $340^{\circ}C.$ Tris(si-lyl) methanes with Si-H bonds, 3a-d $[Cl_3-nMenSiCH(SiHCl_2)_2]$, and 4a-d $[Cl_3-nMenSiCH(SiHCl_2)(SiCl_3)]$, were obtained as the major products and tris(silyl)methanes having no Si-H bond, 5a-d $[Cl_3-nMenSiCH(SiCl_3)_2]$, as the minor product along with byproducts of bis(chlorosilyl)methanes, derived from the reaction of silicon with chloromethylsilane formed by the decomposition of 1. In addition to those products, trichlorosilane and tetra-chlorosilane were produced by the reaction of elemental silicon with hydrogen chloride. The decomposition of 1 was suppressed and the production of polymeric carbosilanes reduced by adding hydrogen chloride to 1. Cad-mium was a good promoter for and the optimum temperature for this direct synthesis was $280^{\circ}C$.

• Tribology and Lubricants
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• v.4 no.2
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• pp.44-51
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• 1988

Titanium carbide(TiC), Titanium nitride(TiN), and Titanium carbonnitride(Ti(C,N)) films were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$, $TiCl_4-N_2-H_2$, and $TiCl_4-CH_4-N_2-H_2$ gas mixtures, respectively. The experimental results indicate that TiC coatings compared with TiN coatings on $Si_3N_4$ -TiC ceramic have an improved microstructural property, good thermal shock resistance, and good interfacial bonding. However TiN coatings compared with TiC coatings have a low friction coefficient with steel and good chemical stability. It is found by cutting test that coated insert compared with $Si_3N_4$-TiC ceramic have a superior flank and crater wear resistance. And multilayer coating compared with monolayer coating shows a improved wear resistance.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.589-593
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• 2003

Silica based Planar Lightwave Circuits (PLC) have been applied to various kinds of wave-guided optical passive devices. SiO$_2$ (buffer) and GeO$_2$-SiO$_2$ (core) thick films have been deposited by Flame Hydrolysis Deposition (FHD). The SiO$_2$ films were produced by the flame hydrolysis reaction of halide materials such as SiCl$_4$, POCl$_3$ and BCl$_3$ into an oxy-hydrogen torch. The P concentration increased from 2.0 to 2.8 at％ on increasing the POCl$_3$/BCl$_3$ flow ratio. The refractive index increased from 1.4584 to 1.4605 on increasing the POC1$_3$/BC1$_3$ flow ratio from 0.6 to 2.6. The refractive index of GeO$_2$-SiO$_2$ films was controlled by the GeCl$_4$ flow rate. The refractive index increased from 1.4615 to 1.4809 on increasing the GeCl$_4$ flow rate from 30 to 120 sccm.

• Analytical Science and Technology
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• v.15 no.1
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• pp.87-90
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• 2002

The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 ％ in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.