• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.6-9
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• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.352-356
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• 2011

[ $Zn_{2(1-x)}Mn_xSiO_4$ ]$0.07{\leq}x{\leq}0.15$) green phosphor was prepared by solid state reaction. The first heating was at $900^{\circ}C-1250^{\circ}C$ in air for 3 hours and the second heating was at $900^{\circ}C$ in $N_2/H_2$(95%/5%) for 2 hours. The size effect of $SiO_2$ in forming $Zn_2SiO_4$ was investigated. The temperature for obtaining single phase $Zn_2SiO_4$ was lowered from $1100^{\circ}C$ to $1000^{\circ}C$ by decreasing the $SiO_2$ particle size from micro size to submicro size. The effect of the activators for the Photoluminescence (PL) intensity of $Zn_2SiO_4:Mn^{2+}$ was also investigated. The PL intensity properties of the phosphors were investigated under vacuum ultraviolet excitation (147 nm). The emission spectrum peak was between 520 nm and 530 nm, which was involved in green emission area. $MnCl_2{\cdot}4H_2O$, the activator source, was more effective in providing high emission intensity than $MnCO_3$. The optimum conditions for the best optical properties of $Zn_2SiO_4:Mn^{2+}$ were at x = 0.11 and $1100^{\circ}C$. In these conditions, the phosphor particle shape was well dispersed spherical and its size was 200 nm.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.216-220
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• 2013

The etching characteristics of indium zinc oxide (IZO) in $Cl_2/Ar$ plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing $Cl_2$ fraction in the $Cl_2/Ar$ plasma, and with increasing source power, bias power, and process pressure. In the $Cl_2/Ar$ (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to $SiO_2$ were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching.

• Bulletin of the Korean Chemical Society
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• v.26 no.2
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• pp.233-237
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• 2005

Cyclopentadiene compounds, 2-[CR'R(OMe)]-1,3-Me$_2C_5H_3$ (R, R' = 2,2'-biphenyl, 2) and 2-[CR'R(OSiMe$_3$)]-1,3-Me$_2C_5H_3$ (R, R' = 2,2'-biphenyl, 3; R = ph, R' = ph, 4; R = 2-naphthyl, R' = H, 5) are readily synthesized from 2-bromo-3-methoxy-1,3-dimethylcyclopentene (1). Reaction of the cyclopentadienes with Ti(NMe$_2$)$_4$ in toluene results in clean formation of the cyclopentadienyl tris(dimethylamido)titanium complexes, which are transformed to the trichloride complexes, 2-[CR'R(OMe)]-1,3-Me$_2C_5H_2$}TiCl$_3$ (R, R' = 2,2'-biphenyl, 6) and {2-[CR'R(OSiMe$_3$)]-1,3-Me$_2C_5H_2$}TiCl$_3$ (R, R' = 2,2'-biphenyl, 7; R = ph, R' = ph, 8; R = 2-naphthyl, R' = H, 9). Attempts to form C1-bridged Cp/oxido complexes by elimination of MeCl or Me$_3$SiCl were not successful. X-ray structures of 6, 7 and an intermediate complex {2-[Ph$_2$C(OSiMe$_3$)]-1,3-Me$_2C_5H_2$}TiCl$_2$(NMe$_2$) (10) were determined.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.389-393
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• 2013

A rhodamine B-based fluorescent probe for nitrite ion ($NO{_2}^-$) has been designed, synthesized, characterized and its properties for recognition of $NO{_2}^-$ were studied. Nearly non fluorescent probe upon reaction with nitrite ion significantly triggered the fluorescence. Fluorescence response is based on ring opening of the spirolactam of rhodamine B phenyl hydrazide showing maximum absorbance at 552 nm and maximum emission at 584 nm. Probe 3 exhibited high sensitivity and extreme selectivity for nitrite ion over other common ions and oxidants ($Cl^-$, $ClO^-$, $ClO{_2}^-$, $ClO{_3}^-$, $ClO{_4}^-$, $SO{_4}^{2-}$, $SiO{_3}^{2-}$, $NO{_3}^{2-}$, $CO{_3}^{2-}$) examined in methanol water (1:1, v/v) at pH 7.0. The probe might be a new efficient tool for detection of nitrite ion in natural water and biological system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of Industrial Technology
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• v.4
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• pp.37-41
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• 1984

Deposits of SiC has been formed by a chemical vapor deposition technique involving the application of gaseous mixture of $CH_3SiCl_3$ (MTS) and $H_2$ onto graphite substrate. These are non-fluid bed deposits prepared in an induction-heated reactor. From the experimental results, the deposition reaction of SiC is controlled by surface reaction mechanism at the temperature range between $1,100^{\circ}C$ and $1,400^{\circ}C$. The morphology of the SiC deposits changes from amorphous type to coarse, faceted structure as temperature increase.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.297-300
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• 2005

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of $32.4cm^2/V{\cdot}s$ and on/off ratio of $10^6$.

• Journal of Surface Science and Engineering
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• v.24 no.4
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• pp.206-214
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• 1991

In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at $70^{\circ}C$, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate, $70^{\circ}C$, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at $300-400^{\circ}C$. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.

• Corrosion Science and Technology
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• v.7 no.4
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• pp.233-236
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• 2008

Halide-activated pack cementation was utilized to deposit B-doped silicide coating. The pack powders were consisted of $3Wt.c/oNH_4Cl$, 7Wt.c/oSi, $90Wt.c/oAl_2O_3+TiB_2$. B-doped silicide coating was consisted of two layers, an outer layer of $NbSi_2$ and an inner layer of $Nb_5Si_3$. Isothermal oxidation resistance of B-doped silicide coating was tested at $1250^{\circ}C$ in static air. B-doped silicide coating had excellent oxidation resistance, because continuous $SiO_2$ scale which serves as obstacle of oxygen diffusion was formed after oxidation.