• 대한방사선방어학회:학술대회논문집
• /
• 2011.11a
• /
• pp.174-175
• /
• 2011

• Nuclear Engineering and Technology
• /
• v.49 no.6
• /
• pp.1114-1124
• /
• 2017

Acceleration/preconditioning strategies available in the SCEPTRE radiation transport code are described. A flexible transport synthetic acceleration (TSA) algorithm that uses a low-order discrete-ordinates ($S_N$) or spherical-harmonics ($P_N$) solve to accelerate convergence of a high-order $S_N$ source-iteration (SI) solve is described. Convergence of the low-order solves can be further accelerated by applying off-the-shelf incomplete-factorization or algebraic-multigrid methods. Also available is an algorithm that uses a generalized minimum residual (GMRES) iterative method rather than SI for convergence, using a parallel sweep-based solver to build up a Krylov subspace. TSA has been applied as a preconditioner to accelerate the convergence of the GMRES iterations. The methods are applied to several problems involving electron transport and problems with artificial cross sections with large scattering ratios. These methods were compared and evaluated by considering material discontinuities and scattering anisotropy. Observed accelerations obtained are highly problem dependent, but speedup factors around 10 have been observed in typical applications.

• Nuclear Engineering and Technology
• /
• v.54 no.11
• /
• pp.4280-4295
• /
• 2022

In this paper, a new multi-group neutron-gamma transport calculation code system STRAUM-MATXST for complicated geometrical problems is introduced and its development status including numerical tests is presented. In this code system, the MATXST (MATXS-based Cross Section Processor for S_N Transport) code generates multi-group neutron and gamma cross sections by processing MATXS format libraries generated using NJOY and the STRAUM (S_N Transport for Radiation Analysis with Unstructured Meshes) code performs multi-group neutron-gamma coupled transport calculation using tetrahedral meshes. In particular, this work presents the recent implementation and its test results of the Krylov subspace methods (i.e., Bi-CGSTAB and GMRES(m)) with preconditioners using DSA (Diffusion Synthetic Acceleration) and TSA (Transport Synthetic Acceleration). In addition, the Krylov subspace methods for accelerating the energy-group coupling iteration through thermal up-scatterings are implemented with new multi-group block DSA and TSA preconditioners in STRAUM.

• Journal of Energy Engineering
• /
• v.16 no.1 s.49
• /
• pp.46-52
• /
• 2007

The piecewise constant angular approximation is developed to replace the conventional angular quadrature sets in the solution of the second-order, multi-dimensional $S_{N}$ neutron transport equations. The newly generated quadrature sets by this method substantially mitigate ray effects and can be used in the same manner as the conventional quadrature sets are used. The discrete-ordinates and the piecewise-constant approximations are applied to both the first-order Boltzmann and the second-order form of neutron transport equations in treating angular variables. The result is that the mitigation of ray effects is only achieved by the piecewise-constant method, in which new angular quadratures are generated by integrating angle variables over the specified region. In other sense, the newly generated angular quadratures turn out to decrease the contribution of mixed-derivative terms in the even-parity equation that is one of the second-order neutron transport equation. This result can be interpreted as the entire elimination or substantial mitigation of ray effect are possible in the simplified even-parity equation which has no mixed-derivative terms.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.647-647
• /
• 2013

We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the structures, energetics and charge transport characteristics of nitrogen-doped graphene and graphene nanoribbons (GNRs) with additional doping of phosphorus or boron atoms. Considering graphitic, pyridinic, and porphrin-like N doping sites and increasing N-doping concentration, we analyze the structures of N-P and N-B doped graphene and particularly focus on how they affect the charge transport along the lateral direction. For the GNRs, we also consider the differences between defects formed at the edge and bulk regions. Implications of our findings in the context of electronic and energy device applications will be also discussed.

• Macromolecular Research
• /
• v.17 no.9
• /
• pp.714-717
• /
• 2009

Hole transport copolymers consisting of 3,4-ethylenedioxythiophene (EDOT) and N-4-butylphenyl-N,N-diphenylamine (BTPA) were synthesized by oxidative coupling reaction using $FeCl_3$ as an oxidant. These copolymers showed good solubility and their thin films showed sufficient morphological stability. The copolymers showed an absorption maximum around 320 nm. Copolymers had an oxidation peak at approximately $1.03{\sim}1.14V$ versus the Ag/AgCl electrode. The hole mobility increased with increasing portion of the EDOT unit. The hole mobility of the copolymer containing 57% of the EDOT unit showed the highest mobility of $3{\times}10^{-5}cm^2/V{\cdot}s$.

• Nuclear Engineering and Technology
• /
• v.53 no.7
• /
• pp.2084-2094
• /
• 2021

Delta-form-based methods for solving high order spatial discretization schemes are introduced into the reactor S_N transport equation. Due to the nature of the delta-form, the final numerical accuracy only depends on the residuals on the right side of the discrete equations and have nothing to do with the parts on the left side. Therefore, various high order spatial discretization methods can be easily adopted for only the transport term on the right side of the discrete equations. Then the simplest step or other robust schemes can be adopted to discretize the increment on the left hand side to ensure the good iterative convergence. The delta-form framework makes the sweeping and iterative strategies of various high order spatial discretization methods be completely the same with those of the traditional S_N codes, only by adding the residuals into the source terms. In this paper, the flux limiter method and weighted essentially non-oscillatory scheme are used for the verification purpose to only show the advantages of the introduction of delta-form-based solving methods and other high order spatial discretization methods can be also easily extended to solve the S_N transport equations. Numerical solutions indicate the correctness and effectiveness of delta-form-based solving method.

• Railway Journal
• /
• v.12 no.2
• /
• pp.24-29
• /
• 2009

• Advances in nano research
• /
• v.17 no.2
• /
• pp.137-147
• /
• 2024

Graphene nanoribbons (GNRs) are considered a promising alternative to graphene for future nanoelectronic applications. However, GNRs-based device modeling is still at an early stage. This research models the electronic properties of n-doped rough-edged 13-armchair graphene nanoribbons (13-AGNRs) and quantum transport properties of n-doped rough-edged 13-armchair graphene nanoribbon field-effect transistors (13-AGNRFETs) at different doping concentrations. Step-up and edge doping are used to incorporate doping within the nanostructure. The numerical real-space nearest-neighbour tight-binding (NNTB) method constructs the Hamiltonian operator matrix, which computes electronic properties, including the sub-band structure and bandgap. Quantum transport properties are subsequently computed using the self-consistent solution of the two-dimensional Poisson and Schrödinger equations within the non-equilibrium Green's function method. The finite difference method solves the Poisson equation, while the successive over-relaxation method speeds up the convergence process. Performance metrics of the device are then computed. The results show that highly doped, rough-edged 13-AGNRs exhibit a lower bandgap. Moreover, n-doped rough-edged 13-AGNRFETs with a channel of higher doping concentration have better gate control and are less affected by leakage current because they demonstrate a higher current ratio and lower off-current. Furthermore, highly n-doped rough-edged 13-AGNRFETs have better channel control and are less affected by the short channel effect due to the lower value of subthreshold swing and drain-induced barrier lowering. The inclusion of dopants enhances the on-current by introducing more charge carriers in the highly n-doped, rough-edged channel. This research highlights the importance of optimizing doping concentrations for enhancing GNRFET-based device performance, making them viable for applications in nanoelectronics.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.432.2-432.2
• /
• 2014

Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.