• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.935-938
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• 2011

The etching characteristics of ZnO and etch selectivities of ZnO to $SiO_2$ in $SF_6$/Ar plasma were investigated using Inductively-coupled-plasma (ICP). The maximum etch rates of ZnO were 6.5 nm/min at $SF_6$(50%)/Ar(50%), Source power (700 W), Bias power (250 W), Working pressure(8 mTorr). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 50% Ar fraction in $SF_6$/ Ar plasma. The plasma diagnostic were characterized using Optical Emission Spectroscopy (OES) analysis measurements.

• ETRI Journal
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• v.21 no.3
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• pp.16-21
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• 1999

After etching Al-Cu alloy films using SiCl4/Cl_2/He/CHF3 mixed gas plasma, the corrosion phenomenon at the grain boundary of the etched surface and a passivation layer on the etched surface with an SF6 plasma treatment subsequent to the etching were studied. In Al-Cu alloy system, corrosion occurs rapidly on the etched surface by residual chlorine atoms, and it occurs dominantly at the grain boundaries rather than the crystalline surfaces. To prevent corrosion, the SF6 gas plasma treatment subsequent to etching was carried out. The passivation layer is composed of fluorine-related compounds on the etched Al-Cu surface after the SF6 treatment, and it suppresses effectively corrosion on the surface as the SF6 treatment pressure increases. Corrosion could be suppressed successfully with the SF6 treatment at a total pressure of 300 mTorr. To investigate the reason why corrosion could be suppressed with the SF6 treatment, behaviors of chlorine and fluorine were studied by various analysis techniques. It was also found that the residual chlorine incorporated at the grain boundary of the etched surface accelerated corrosion and could not be removed after the SF6 plasma treatment.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.1
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• pp.44-47
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• 2009

This paper describes the information for quantitative simulation of weakly ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. $SF_6$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_6$ gas characteristics. Electron transport coefficients in $SF_6-N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method. which are ionization coefficient, attachment coefficient, effective ionization coefficient, and critical E/N, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of $SF_6-N_2$ mixture gases.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.395-399
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• 2003

In this paper, physical phenomena which are related to the high temperature and high pressure arc plasma generated during the fault current interruption by SF6 gas circuit breakers are reviewed. In particular, in order to analyze nozzle ablation induced by the heats transferred to the surface of the poly-tetrafluoroethylene(PTFE) nozzle through arc radiation, a governing equation for the calculation of PTFE concentration is added to the governing equations for SF6 arc Plasma analysis. The proposed method is applied to the steady state analysis of $SF_6$ arc plasma generated by direct current taking account of the nozzle ablation and the results are presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.29-32
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• 1999

$GaF_3$ films were directly grown on p' and p-type GaAs(100) substrates using a $SF_6$ plasma discharge system. GaAs MIS(Meta1-Insulator-Semiconductor) capacitor was successfully fabricated for about 1 hour at temperature $290^{\circ}C$ using the as-grown $GaF_3$ films. The as-grown films on p'-GaAs exhibited a current density of less than 6.68 $\times$ $1O^{-9}$ A/$cm^2$ at a breakdown field of 500kV/cm and a refractive index of 2.0 ~ 2.3 at a wavelength of 632.8 nm. The dielectric constant was about 5 derived from 1 MHz capacitance-voltage (C-V) measurements. Dielectric dispersion of the fluoridated films on p'-GaAs measured ranged from 100 Hz to 10 MHz was not observed.

• Proceedings of the KSME Conference
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• 2002.08a
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• pp.365-368
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• 2002

The design of industrial arc plasma systems is still largely based on trial and error although the situation is rapidly improving because of the available computational power at a cost which is still fast coming down. The desire to predict the behavior of arc plasma system, thus reducing the development cost, has been the motivation of arc research. To interrupt fault current, the most enormous duty of a circuit breaker, is achieved by separating two contacts in a interruption medium, $SF_{6}$ gas or air etc., and arc plasma is inevitably established between the contacts. The arc must be controlled and interrupted at an appropriate current zero. In order to analyze arc behavior in $SF_{6}$ gas circuit breakers, a numerical calculation method combined with flow field and electromagnetic field has been developed. The method has been applied to model arc generated in the Aachen nozzle and compared the results with the experimental results. Next, we have simulated the unsteady flow characteristics to be induced by arcing of AC cycle, and conformed that the method can predict arc behavior in account of thermal transport to $SF_{6}$ gas around the arc, such as increase of arc voltage near current zero and dependency of arc radius on arc current to maintain constant arc current density.

• Journal of the Korean Society of Clothing and Textiles
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• v.25 no.1
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• pp.154-161
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• 2001

We have treated polyester fabric with $CF_4,\;C_2F_6,\;SF_6\;and\;C_3F_6$ glow discharge plasmas to develop functional fabrics which preserve moisture transportation and water proofing nature. Modified properties were evaluated by water vapor permeation rate and breakthrough water pressure. The change of surface morphology was observed by SEM. Fiber interstice of the plasma treated fabric was calculated as $0.32{\mu}{\textrm}{m}$, and this value was sufficiently ideal as water repellent material. The moisture transportation of ${CF_4}-treated$ fabric was good as much as untreated fabric, and those of $C_2$F(sub)6-treated, SF(sub)6-treated fabrics were reduced by 1~3%, and that of ${C_3F_6}-treated$ fabric was reduced by 15%. The best treatment condition were 0.06 torr 120 seconds in $CF_4$, 0.05 torr 30 seconds in $SF_6$, 0.08~0.15 torr 90 seconds in $SF_6$ and 0.1 torr 45 seconds in $C_3F_6$ respectively. The grade of moisture transportation effect was $CF_4>C_2F_6>SF_6>>C_3F_6$, and water proofing effect was $C_2F_6{\approx}CF_4>C_3F_6>SF_6$. It was observed by SEM that the thin film was formed on the surface of the treated substrate by the fluorocarbon plasma treatment.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.75-79
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• 1999

We have studied electrical properties of polyimide for the next generation interlayer low dielectric during plasma etching. Dielectric constant of polyimide exposed to Cl-based plasma, which is used in aluminum etching, increased, while that of polyimide exposed to $SF_{6}$ plasma decreased. The results are related to fluorine or chlorine bonds as examined by FTIR ana XPS analyses. So, we expect that Cl-based 1)miasma etching of aluminum followed by $SF_{6}$ plasma exposure results in the prevention of post-etch corrosion and decrease of dielectric constant.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.278-282
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• 1987

Computational and theoritical investigations of an arc plasma have been made for the design of a circuit breaker. Modeling of an arc plasma used to be very involved and difficult because of the many variables and factors, In this paper, the dynamic behavior of an arc plasma is investigated by solving the MHD equations. Comparing an $SF_6$-blast arc with a non-blast arc, it has been found that the effect of gas-blast has a great influence on density rather than temperature.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.13-17
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• 2000

The electrical properties of polyimide for interlayer dielectric applications are investigated with ECR (Electron Cyclotron Resonance) etching process. ECR etching with $Cl_2$-based plasma, generally used for aluminum etching, results in an increase in the dielectric constant of polyimide, while $SF_{6}$ plasma exhibits a high polyimide etch rate and a reducing effect of the dielectric constant. The leakage current of the polyimide is significantly suppressed after plasma exposure. Combination of Al etching with $Cl_2$plasma and polyimide etching with $SF_{6}$ plasma is expected as a good tool for realizing the multilevel metallization structures.