• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.1
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• pp.91-96
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• 1987

Plasma etching can obtain less damaged etch surface than reactive ion etching. This study was performed to get anisotropic etching characteristics of Si using two step etching technique with C2CIF5 and SF6 gas mixture. The results show that the etch rate and aspect ratio of silicon was increased with increment of SF6 contents. The bulging phenomenon on trench side wall in the plasma one-step etching technique was eliminated by the two step etching technique. The anisotropy was decreased from 12(at 120m Torr) to 2.2(at 400m Torr) with increasing the chamber pressure. At the low rf power (350 watts) anisotrpy of silicon was obtained 7 lower than that of high rf power (650 watts. A:~9). In Summary we obtained anisotropic etching profiles of silicon with e 6\ulcornerm depth by using the plasma two-step etching technique.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.1-6
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• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.297-300
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• 2009

본 연구는 Knife형 전극을 사용하여 $SF_6$와 $N_2/O_2$의 혼합체적률이 각각 100:0, 80:20, 60:40인 혼합가스에서의 캡 변화에 따른 연면방전 특성을 연구할 목적으로 교류고전압 인가 시 압력 (P), 전극간거리 (d) 및 사용된 가스의 변화에 따른 절연파괴특성을 연구 하였다. 본 연구를 통해 챔버 내의 P와 d가 증가할수록 연면절연파괴전압은 상승하다가 일정한 압력 이상에서는 포화하는 경향을 보였고, $N_2:O_2$의 혼합체적률이 100:0인 경우는 $SF_6$의 37%, 80:20은 47%, 60:40은 46%로 나타났다. $N_2:O_2$ 혼합가스 중에서 체적혼합비율이 80:20인 경우가 연면절연내력이 가장 좋게 나타났다.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.16-22
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• 2008

We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.121-125
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• 2020

With miniaturization of semiconductor, the manufacturing process become more complex, and undetected small changes in the state of the equipment have unexpectedly changed the process results. Fault detection classification (FDC) system that conducts more active data analysis is feasible to achieve more precise manufacturing process control with advanced machine learning method. However, applying machine learning, especially in supervised learning criteria, requires an arduous data labeling process for the construction of machine learning data. In this paper, we propose a semi-supervised learning to minimize the data labeling work for the data preprocessing. We employed equipment status variable identification (SVID) data and optical emission spectroscopy data (OES) in silicon etch with SF6/O2/Ar gas mixture, and the result shows as high as 95.2% of labeling accuracy with the suggested semi-supervised learning algorithm.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2403-2409
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• 2014

Absolute isotope ratio is a critical constituent in determination of atomic weight. To measure the absolute isotope ratio using a mass spectrometer, mass discrimination factor, $f_{MD}$, is needed to convert measured isotope ratio to real isotope ratio of gas molecules. If the $f_{MD}$ could be predicted, absolute isotope ratio of a chemical species would be measureable in absence of its enriched isotope pure materials or isotope references. This work employed gravimetrically prepared isotope mixtures of argon (Ar) to obtain $f_{MD}$ at m/z of 40 in the magnetic sector type gas mass spectrometer (gas/MS). Besides, we compare the nitrogen isotope ratio of nitrogen trifluoride ($NF_3$) with that of nitrogen molecule ($N_2$) decomposed from the same $NF_3$ thermally in order to identify the difference of $f_{MD}$ values in extensive m/z region from 28 to 71. Our result shows that $f_{MD}$ at m/z 40 was $-0.044%{\pm}0.017%$ (k = 1) from measurement of Ar artificial isotope mixtures. The $f_{MD}$ difference in the range of m/z from 28 to 71 is observed $-0.12%{\pm}0.14%$ from $NF_3$ and $N_2$. From combination of this work and reported $f_{MD}$ values by another team, IRMM, if $f_{MD}$ of $-0.16%{\pm}0.14%$ is applied to isotope ratio measurement from $N_2$ to $SF_6$, we can determine absolute isotope ratio within relative uncertainty of 0.2 %.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.114-120
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• 2010

Conventional surface texturing in crystalline silicon solar cell have been use wet texturing by Alkali or Acid solution. But conventional wet texturing has the serious issue of wafer breakage by large consumption of wafer in wet solution and can not obtain the reflectance below 10% in multi crystalline silicon. Therefore it is focusing on RIE texturing, one method of dry etching. We developed large scale plasma RIE (Reactive Ion Etching) equipment which can accommodate 144 wafers (125 mm) in tray in order to provide surface texturing on the silicon wafer surface. Reflectance was controllable from 3% to 20% in crystalline silicon depending on the texture shape and height. We have achieved excellent reflectance below 4% on the weighted average (300~1,100 nm) in multi crystalline silicon using plasma texturing with gas mixture ratio such as $SF_6$, $Cl_2$, and $O_2$. The texture shape and height on the silicon wafer surface have an effect on gas chemistry, etching time, RF frequency, and so on. Excellent conversion efficiency of 16.1% is obtained in multi crystalline silicon by RIE process. In order to know the influence of RF frequency with 2 MHz and 13.56 MHz, texturing shape and conversion efficiency are compared and discussed mutually using RIE technology.

• Ultrasonography
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• v.32 no.1
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• pp.59-65
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• 2013

Purpose: The purpose of this study is to establish the methodology regarding synthesis of ultrasound contrast agent imaging, and to evaluate the characteristics of the synthesized ultrasound contrast agents, including size or degradation interval and image quality. Materials and Methods: The ultrasound contrast agent, composed of liposome and SF6, was synthesized from the mixture solution of $21{\mu}mol$ DPPC (1, 2-Dihexadecanoyl-sn-glycero-3-phosphocholine, $C_{40}H_{80}NO_8P$), $9{\mu}mol$ cholesterol, $1.9{\mu}mol$ of DCP (Dihexadecylphosphate, $[CH_3(CH_2)_{15}O]_2P(O)OH$), and chloroform. After evaporation in a warm water bath and drying during a period of 12-24 hours, the contrast agent was synthesized by the sonication process by addition of buffer and SF6 gas. The size of the contrast agent was controlled by use of either extruder or sonication methods. After synthesis of contrast agents, analysis of the size distribution of the bubbles was performed using dynamic light scattering measurement methods. The degradation curve was also evaluated by changes in the number of contrast agents via light microscopy immediate, 12 hours, 24 hours, 36 hours, 48 hours, 60 hours, 72 hours, and 84 hours after synthesis. For evaluation of the role as an US contrast agent, the echogenicity of the synthesized microbubble was compared with commercially available microbubbles (SonoVue, Bracco, Milan, Italy) using a clinical ultrasound machine and phantom. Results: The contrast agents were synthesized successfully using an evaporation-drying-sonication method. The majority of bubbles showed a mean size of 154.2 nanometers, and they showed marked degradation 24 hours after synthesis. ANOVA test revealed a significant difference among SonoVue, synthesized contrast agent, and saline (p < 0.001). Although no significant difference was observed between SonoVue and the synthesized contrast agent, difference in echogenicity was observed between synthesized contrast agent and saline (p < 0.01). Conclusion: We could synthesize ultrasound contrast agents using an evaporation-drying-sonication method. On the basis of these results, many prospective types of research, such as anticancer drug delivery, gene delivery, including siRNA or microRNA, targeted molecular imaging, and targeted therapy can be performed.