• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1582-1583
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• 2011

Recently, it has been found that trifluoroiodomethane ( $CF_3I$) gas can replace $SF_6$ gas as a prospective substitute gas. For quantitative understanding of gas discharge phenomena, we should know electron collision cross sections and electron transport coefficients. Using electron collision cross sections of $CF_3I$ and Xe, we calculated elecron drift velocity, longitudinal coefficient, effective ionization coefficient in $CF_3I$-Xe mixtures using a two-term approximation of the Boltzmann equation. We also compared the electron transport coefficients in pure gas and those of 10%, 20%, 50%, and 70% $CF_3I$-Xe mixture gases. The present data may be showed appropriate ratios of $CF_3I$-Xe mixture gas for replacing the $SF_6$ gas.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.886-890
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• 2003

The etching characteristics of a LiNbO$_3$ single crystal have been investigated using helicon wave plasma source with bias power and the mixture of CF$_4$, HBr, SF$_{6}$ gas parameters. The etching rate of LiNbO$_3$ with etching parameters was evaluated by surface profiler. The etching surface was evaluated by Atomic Force Microscopy (AFM). The surface morphology of the etched LiNbO$_3$ changed with bias power and the mixture of CF$_4$/Ar/Cl$_2$, HBr/Ar/Cl$_2$, and SF$_{6}$/Ar/Cl$_2$ parameters. Optimum etching conditions, considering both the surface flatness and etch rate were determined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.165-168
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• 1999

The electron transport coefficients in mixture gas includes SF/sub 6/ is analysed in range of E/N values from 60∼800(Td) by the Boltzmann method that using a set of electron collision crass sections determined by the researchers. Swarm parameters in the Boltzmann method simulation such as electron drift velocity, ionization and electron attachment coefficients is in nearly agreement with the respective experimental and theoretical for a range of E/N.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1400_1401
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• 2009

In this paper describes the comparisons of the surface flashover characteristics according to the change of the insulation media by experimental GIS(Gas Insulated Switchgear) chamber in accordance with change of pressure(P) and electrode distance(d). The using insulation medias are $SF_6$, Dry-Air, I-Air(Imitation Air, $N_2$ : $O_2$ = 79[%] : 21[%]), $N_2:O_2$ mixture gas and pure $N_2$. In this study, in order to compare the properties $SF_6$ and order insulation gas, we investigated the properties of the various insulation media with a knife to knife electrode under ac high voltage application. The gas pressure was changed from 1 to 5[atm]. as a result, it was found that dielectric strength is $SF_6$ > I-Air > Dry-Air and the best environmental preservation gas is Dry-Air.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.339-340
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• 2006

AC spark discharge voltage of SF6/CO2and SF6/N2 containing various mixed rate in volume percent (1, 5 and 10%) of SF6 in non-uniform fields are investigated. The needle to plane electrode gap spacing was 5 and 10 mm, and the gas pressure was varied within the range of 0.1~0.7 MPa. We have observed a N-characteristic typical for the electronegative gases even in gas mixtures of 1% SF6 with CO2 and N2 as buffer gases. Especially, the materials of the needle electrode affect the insulation properties of the gas mixtures drastically. On the contrary to the case of needle electrodes made by mild steel or high carbon steel, the N-characteristics are hardly perceived in the case of stainless steel needle in this experiment.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.710-710
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• 2009

$SF_6$ 가스는 높은 절연 특성으로 인해 산업공정에서 순수 또는 $N_2$ 나 $CO_2$ 가스를 혼합시켜 광범위하게 사용되고 있다. 그러나 $SF_6$ 가스의 지구온난화지수는 $CO_2$ 대비 23,900배로 환경에 치명적인 영향을 줄 수 있으므로, $SF_6$ 가스에 대한 분리 및 처리에 관한 연구가 필요하다. 본 연구에서는 조성에 따른 $SF_6-N_2$ 혼합기체의 3상평형(물-하이드레이트-기체)점을 측정하였다. 측정결과 $N_2$가 더 많이 첨가된 혼합기체일수록 순수 $SF_6$의 상평형 조건보다 더 높은 압력, 더 낮은 온도에서 형성됨을 알 수 있었고 라만분석으로 실제 만들어진 하이드레이트 내에 혼합기체를 확인하였다. 또한 하이드레이트 형성속도 및 회수기체의 조성을 측정하여 분리 및 회수의 효율을 살펴보았다. 본 실험에서 얻어진 결과는 $SF_6$ 혼합기체의 분리 및 처리에 관한 연구의 중요한 기초 자료가 될 것이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.299-304
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• 2004

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40％, and the superior anisotropic cross section was observe

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.8
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• pp.144-149
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• 2005

In this paper, insulations characteristics by temperature changes($+30{\sim}-40[^{\circ}C]$) of $SF_6$ gas in the experimental chamber were studied. From this result, The breakdown characteristics classify the vapor stage of $SF_6$ according the Paschen's law, the gas & liquid coexisted stage of voltage value increases & much deviation and the VB low stage as the interior of chamber gets filled with mixture of $SF_6$ that are not liquefacted and remaining air which couldn't be ventilated. In addition the ability of insulation of liquid $SF_6$ was higher than that of the highly pressurized $SF_6$ gas. In this research, we want to provide the base data on designing insulation of high-temperature superconductor and the cryogenic equipments by investigating the insulation characteristics of $SF_6$.

• Membrane Journal
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• v.21 no.3
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• pp.256-262
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• 2011

This study describes the performance of PSF and PC membranes for separation and recovery of $SF_6$ from gas mixtures (10% $SF_6$/70% $N_2$/19% $O_2$/1% $CF_4$) containing low concentration of $SF_6$. The $SF_6$ concentration in retentate, recovery efficiency and selectivity of mixed gases were measured as a function of retentate flow rate and temperature. The concentration of $SF_6$ in the gas recovered from PSF and PC membrane respectively decreased with increase of retentate flow rate and increased with increase of temperature. The values of $SF_6$ concentration in retentate of PSF membrane were higher than those of PC membrane at constant experimental conditions. The maximum value of recovery efficiency of PSF and PC membranes are 95.9% and 67.8%, respectively, under 298.15 K and 150 cc/min of retentate flow rate. With the exception of $CF_4/SF_6$, the real selectivities of $N_2/SF_6$ and $O_2/SF_6$ at PSF membrane were higher than those of PC membrane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.868-871
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• 2003

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability. Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of $1000^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using $SF_6/O_2$ and $CF_4/O_2$ gas mixture. Etch rate have been investigated as a function of oxygen concentration in the gas mixture, RF power, and working pressure. Etch rate was measured by surface profiler and FE-SEM. $SF_6/O_2$ gas mixture has been shown high etch rate than $CF_4/O_2$ gas mixture. Maximum etch rate appeared at 450W of RF power. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40%, and the superior anisotropic cross section was observed.