• Bulletin of the Korean Chemical Society
• /
• v.28 no.12
• /
• pp.2139-2152
• /
• 2007

Ruthenium complex-catalyzed reactions often require highly qualified tuning of reaction conditions with substrates to attain high yield and selectivity of the products. In this review, our strategies for achieving characteristic ruthenium complex-catalyzed co-oligomerization of different alkenes are disclosed: 1) The codimerization of 2-norbornenes with acrylic compounds by new ruthenium catalyst systems of RuCl3(tpy)/Zn [tpy = 2,2':6',2''-terpyridine] or [RuCl2(η6-C6H6)]2/Zn in alcohols, 2) A novel synthesis of 2-alkylidenetetrahydrofurans from dihydrofurans and acrylates by zerovalent ruthenium catalysts, such as Ru(η4-cod)(η6-cot) [cod = 1,5-cyclooctadiene, cot = 1,3,5-cyclooctatriene] and Ru(η6-cot)(η2-dmfm)2 [dmfm = dimethyl fumarate], 3) Regio- and stereoselective synthesis of enamides by Ru(η6-cot)(η2-dmfm)2-catalyzed codimerization of N-vinylamides with alkenes, and 4) Unusual head-to-head dimerization of styrenes and linear codimerization of styrenes with ethylene by Ru(η6-cot)(η2-dmfm)2 catalyst in the presence of primary alcohols.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.302-302
• /
• 2007

The $SrRuO_3$/Si thin film electrodes are grown with (00l) preferred orientations on SrO buffered-Si (001) substrates by pulsed laser deposition. The optimum conditions of SrO buffer layers for $SrRuO_3$ preferred orientations are the deposition temperature of $700^{\circ}C$, deposition pressure of $1\;{\times}\;10^{-6}\;Torr$, and the thickness of 6 nm. The 100nm thick-$SrRuO_3$ bottom electrodes deposited above $650^{\circ}C$ on SrO buffered-Si (001) substrates have a rms roughness of approximately $5.0\;{\AA}$ and a resistivity of 1700 -cm, exhibiting a (00l) relationship. The 100nm thick-$Pb(Zr_{0.2}Ti_{0.8})O_3$ thin films deposited at $575^{\circ}C$ have a (00l) preferred orientation and exhibit $2P_r$ of $40\;C/cm^2$, $E_c$ of 100 kV/cm, and leakage current of about $1\;{\times}\;10^{-7}\;A/cm^2$ at 1V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.3
• /
• pp.200-207
• /
• 2011

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.3
• /
• pp.7-12
• /
• 2018

The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.

• Journal of the Korean Magnetics Society
• /
• v.18 no.4
• /
• pp.136-141
• /
• 2008

In this study, the magnetic(static and high-frequency) and microwave absorbing properties have been investigated in Ru-Co substituted M-hexaferrites($BaFe_{12-2x}Ru_xCo_xO_{19}$). The powders and sintered specimens were prepared by conventional ceramic processing technique. With the calcined powders, the composite specimens were prepared using the silicone rubber as a matrix material. The substitution ratio of Ru-Co to obtain in-plane magnetic anisotropy, thus having the minimum coercivity, is much smaller (about x=0.3) than the previously reported Ti-Co substituted specimen. Owing to this low substitution, the specimen has a large value of saturation magnetization($M_s$=65 emu/g). Ferromagnetic resonance behavior and microwave absorbing frequency band is strongly influnced by the coercvity which can be controlled by Ru-Co substitution ratio. It is found that the M-hexaferrites with planar magnetic anisotropy by doping Ru-Co in both sintered and composite form have superior microwave absorbing properties in GHz frequency range.

• Applied Microscopy
• /
• v.47 no.3
• /
• pp.187-202
• /
• 2017

The classical electron band theory is a powerful tool to describe the electronic structures of solids. However, the band theory and corresponding density functional theory become inappropriate if a system comprises localized electrons in a scenario wherein strong electron correlations cannot be neglected. $SrRuO_3$ is one such system, and the partially localized d-band electrons exhibit some interesting behaviors such as enhanced effective mass, spectral incoherency, and oppression of ferromagnetism and itinerancy. In particular, a Metal-Insulator transition occurs when the thickness of $SrRuO_3$ approaches approximately four unit cells. In the computational studies, irrespective of the inclusion of on-site Hubbard repulsion and Hund's coupling parameters, correctly depicting the correlation effects is difficult. Because the oxygen atoms and the symmetry of octahedra are known to play important roles in the system, scrutinizing both the electronic band structure and the lattice system of $SrRuO_3$ is required to find the origin of the correlated behaviors. Transmission electron microscopy is a promising solution to this problem because of its integrated functionalities, which include atomic-resolution imaging and electron energy loss spectroscopy.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2004.04b
• /
• pp.36.2-36.2
• /
• 2004

• Journal of the Korean institute of surface engineering
• /
• v.50 no.5
• /
• pp.301-307
• /
• 2017

The purpose of this study is to investigate the electrical properties of thick-film resistor (TFR) prepared from $CaO-ZnO-B_2O_3-Al_2O_3-SiO_2$ (CZBAS) glass containing $RuO_2$ particles. $RuO_2$-glass composite powder was made by mixing and melting oxide powders of constituents. For comparison, $RuO_2$ powder was simply mixed with glass powder. $RuO_2$-40wt% glass composite and mixture were dispersed in an organic binder to obtain printable resistor paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C/min$ in an ambient atmosphere. $RuO_2$-glass composite sample showed much higher resistance compared to the simple mixed sample. This could be attributed to the difference in conducting mechanism. After sintering at $850^{\circ}C$, temperature coefficient of resistance of composite sample was lower than that of simple-mixed sample. TFR with dense and homogeneous microstructure could be obtained by using $RuO_2$-glass composite powder.

• Journal of the Korean Vacuum Society
• /
• v.5 no.1
• /
• pp.67-72
• /
• 1996

$RU_{1-x}Ir_xO_2$ films were deposited on the quartz substrate by a spray pyrolysis method. The x-ray diffraction patterns showed that the structure of the $RU_{1-x}Ir_xO_2$ film was tetragonal and the lattice constant $a_o$ and $c_o$ were increased from 4.495 A to 4.058 A and from 3.092A to 3.156 A, respectively as the Ir composition varied from 0.0 to 1.0. The $RU_{1-x}Ir_xO_2$ film was metallic and the resistivity of the samples was increased from $7{\times}10^{-5}{\Omega}\textrm{cm}$ to $48{\times}10^{-5}{\Omega}\textrm{cm}$ with increasing the Ir x. The surface of the sample was slightly roughed, the grain size and the grain boundary width were increased as the Ir composition varied from 0.0 to 1.0.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2009.11a
• /
• pp.58-61
• /
• 2009

The characteristics of nitrous oxide catalytic decomposition were studied to utilize the nitrous oxide as a propellant. The Ru and Pt were selected as nitrous oxide decomposition catalysts and loaded in the $Al_2O_3$ support using an impregnation method. The nitrous oxide conversions as a variation of GHSV and reaction temperature were measured in a tubular reactor. At the low GHSV and high temperature, the conversion was increased, and Ru/$Al_2O_3$ catalyst showed better performance than Pt/$Al_2O_3$ catalyst.