• Journal of the Korean Ceramic Society
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• v.22 no.1
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• pp.40-46
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• 1985

The effect of calcining temperature ranged from $700^{\circ}C$ to 110$0^{\circ}C$ on sintering characteristics of morphotropic $Pb(Zr_{0.53}Ti_{0.47})O_3 doped with $Nb_2O_5$ has been investigated. The ratio of sintered grain size to calcined grain size decreased as the calcining temperature increased. The hardness as well as the sintered density of the samples reached a maximum at about 90$0^{\circ}C$. The X-ray diffraction pattern of the sintered sample showed both tetragonal and rhombohedral phases. The tetragonal phases intensity increased with the calcining temperature going through a maximum at about 90$0^{\circ}C$ while the rhombohedral phase intensity remained uneffected. The both intensity were about the same at 90$0^{\circ}C$ The dielectric constant of the sintered samples reached a maximum um while the dielectric dissipation factor showed a minimum at the calcining temperature of about 100$0^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.25-26
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• 1997

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.103-104
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• 2006

In this paper. we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interlace. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then. we compared the structural characteristics before and alter CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.615-618
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• 2004

The piezoelectricity and polarization of multilayer ceramic actuators, being designed to stack ceramic layer and electrode layer alternately, were investigated under a consideration of geometry, the thickness ratio of the ceramic layer to electrode layer The actuators were fabricated by tape-casting of $0.42PbTiO_3-0.38PbZrO_3-0.2Pb(Mn_{1/3}Nb_{2/3})O_3$ followed by laminating, burn-out and co-firing process. The actuators of $5\times5mm^2$ in area were formed in a way that $60{\sim}200{\mu}m$ thick ceramics were stacked 10 times alternately with $5{\mu}m$ thick electrode. Increase in polarization and electric field-displacement with increasing thickness ratio of the ceramic/electrode layer and thickness/cross section ratio were attributed to the change of $non-180^{\circ}/180^{\circ}$ domain ratio which was affected by the interlayer internal stress and Poisson ratio of ceramic layer. The piezoelectricity and actuation behaviors were found to be dependent upon the volume ratio (or thickness ratio) of ceramic layer relative to ceramic layer. Concerning with the existence of internal stress, the field-induced polarization and deformation were described in the multilayer actuator.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.257-264
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• 1997

The aim of this study was to investigate the degradation of piezoelectric properties with compressive cy-clic loading, the change in bending strength before and after poling treatment and fracture strength in MPB depending on the amount of MnO2 addition. The MPB with 0.25 wt.% MnO2 showed the best resistance against the piezoelectric degradation with compressive cyclic loading. Bending strength increased when pol-ing and loading directions are parallel, however decreased when poling and loading directions are per-pendicular each other. Because, during poling treatment, compressive residual stress is generated in the pol-ing direction but tensile residual stress in the perpendicular direction to poling direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.325-326
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• 2006

In this study, in order to develop piezoelectric device for multilayer piezoelectric ultrasonic motor, low temperature sintering $Pb(Mn_{1/3}Nb_{2/3})_{0.02}(Ni_{1/3}Nb_{2/3})_{0.12}(Zr_{0.48}Ti_{0.52})_{0.86}O_3$ system ceramics were fabricated according to the variations of forming pressure of casting sheet. At the 300[$kgf/cm^2$] forming pressure, the maximum density of 7.8[$g/cm^3$] was obtained. At the 350[$kgf/cm^2$] forming pressure, the maximum values of effective electromechanical coupling factor $k_{cff}\;=\;0.24$ and mechanical quality factor Qm=628 were obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.496-500
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• 2017

$Pb(Mn_{1/3}Nb_{2/3})_{0.07}(Ni_{1/3}Nb_{2/3})_{0.10}(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ composition ceramics with high piezoelectric properties were fabricated by the columbite precursor method for ultrasonic generators, and the effects of sintering temperature on microstructure and piezoelectric properties were systematically investigated. It was found that the tetragonality of the ceramics decreased with increase in sintering temperature. Moreover, excellent physical properties such as $d_{33}=447pC/N$, ${\varepsilon}_r=1,843$, $k_p=0.641$, and $Q_m=1,207$ were obtained for an ultrasonic generator when the second calcination temperature and sintering temperature were $720^{\circ}C$ and $920^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.337-337
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• 2008

Acoustic emission(AE) 센서의 감도개선을 위해 적합한 압전소자의 특성향상에 대해 연구하였다. AE 센서기술은 재료 내부에 마이크로크랙에 의해 변형과 손상이 생길 때 발생하는 기계적인 진동을 고감도 압전소자를 통해 전기적인 신호로 변환해 재료의 이상 유무를 알 수 있는 유용한 방법이다. AE 센서는 압전소자와 구리 캡 그리고 구리와 황동재질의 떨림판으로 구성되어 있다. 재료의 손상을 알기위한 변위가 낮을 경우 약한 AE 신호가 발생하며 검출하기가 어렵다. 미세변위에 의한 AE신호를 검출하기 위해서는 우수한 전기기계결합계수 (kp)와 압전상수($d_{33}$)를 갖는 압전소자가 필요하다. 이에 본 연구에서는 Pb$(Zr_{0.54}Ti_{0.46})O_3$ + x wt%$Cr_2O_3$ + y wt%$Nb_2O_5$ 조성에서 $Cr_2O_3$, $Nb_2O_5$ 첨가량 x, y 변화에 따른 압전특성과 AE센서특성을 고찰하였다.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.245-247
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• 1996

The ferroelectric $Pb(Zr_xTi_{1-x})O_3$ (20/80, 80/20) heterolayered thin films were fabricated from an alkoxide-based by Sol-Gel method. The PZT(20/80) and PZT(80/20) stock solution were made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. Each layers were baked to remove the organic materials at 300[$^{\circ}C$] for 30[min]. and sintered at 650[$^{\circ}C$] for 1[hr]. This procedure was repeated 5 times. At this time the thickness of thin films were about 4000[$\AA$]. Relative dielectric constant and remanent polarization of the PZT heterolayered thin films were 1200, 27.10 [${\mu}C/cm^2$], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.136-139
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• 1999

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.