• 한국전기전자재료학회논문지
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• 제28권9호
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• pp.561-564
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• 2015

Nano-size $BaTiO_3$ powder was synthesized by relatively simple hydrothermal reaction method. Finely dispersed Ti hydroxide precursor was first precipitated using $Ti(SO_4)_2$ and NaOH solution by applying ultrasonic power and washed thoroughly to remove $SO_4{^{2-}}$ and $Na^+$ ion. Then hydrothermal reaction was done at $160^{\circ}C$ for 6 hrs using solution prepared by washed Ti hydroxide precursor slurry and $Ba(OH)_2{\cdot}8H_2O$ with Ti:Ba mole ratio of 1:1. 200 ~ 500 nm size and uniform size distributed $BaTiO_3$ powder was synthesized by relatively low temperature and simple process.

• 한국결정성장학회지
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• 제8권4호
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• pp.667-672
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• 1998

Columbite precursor 방법을 이용하여 제조한 Pb(Mg1/3Nb2/3)O3-PbTiO3 세라믹계의 초전특성을 $1000^{\circ}C$에서 $1250^{\circ}C$의 소결온도 범위에서 관찰하였다. Pb(Mg1/3Nb2/3)O3-PbTiO3 계는 전형적인 완화형 강유전특성을 나타내었다. $1250^{\circ}C$에서 2시간 소결한 $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ 세라믹의 경우, 높은 소결밀도와 향상된 초전특성을 얻을수 있었다. $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$세라믹은 항온장치를 이용할 경우 초전 센서로의 응용가능성을 나타내었다.

• 반도체디스플레이기술학회지
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• 제7권4호
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• pp.35-39
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• 2008

We studied deposition of low-k SiOCH dielectric film by PECVD. DEMS(diethoxymethlysilane) precursor, which has two ethoxy groups along with one methyl group attached to the silicon atoms, was used as precursor. The SiOCH film was deposited as a function of oxygen flow rates ranging from 0 to 100sccm. The deposition rate($\AA$/min) of SiOCH film was increased due to the increase of oxygen radical as a function of $O_2$ flow rates. The dielectric constant was decreased from 3.0 to 2.77, as the film was annealed at $450^{\circ}C$ for 30 min. So, it could account that the dielectric constant changes sensitively with $O_2$ flow rates. Also, the leakage current of the annealed film exhibited stable curve than that of asdeposited. These results were caused by the increase of Si-O-Si group and decrease of Si-CH group and OH group within the film by annealing.

• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.22-26
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• 2021

Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation in the organic light emitting diodes (OLED). Of those, a laminated structure of Al₂O₃ and MgO were applied to provide efficient barrier performance for increasing the stability of devices in air. Atomic layer deposition (ALD) method is known as the most promising technology for making the laminated Al₂O₃/MgO and is used to realize a thin film encapsulation technology in organic light-emitting diodes. Atomic layer deposited inorganic films have superior barrier performance and have advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the control system of the MgCP₂ precursor for the atomic layer deposition of MgO was established in order to deposit the MgO layer stably by the injection time of second level and the stable heating temperature. The deposition rate was obtained stably to be from 4 to 10 Å/cycle using the injection pulse times ranging from 3 to 12 sec and a substrate temperature ranging from 80 to 150 ℃.

• 전기학회논문지
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• 제61권2호
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• pp.339-341
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• 2012

The high Tc superconductor of YBCO system with the nominal composition of precursor was prepared from mixed powders of $Y_2O_3$, $BaCO_3$, CuO and $TiO_2$ by the thermal pyrolysis method. The effect of $TiO_2$ doping to Y based ceramics superconductors fabricated by the thermal pyrolysis reaction, to investigate the effect of the dopant on the superconductivity. The voltage appearing across the field-cooled HTS sample increased with external magnetic field. The improvement of critical current property as well as the mechanical property is important for the application. The improvement of the critical current can be achieved by forming the nano size defect working as a flux pining center inside the superconductor. We simply added $TiO_2$ to starting materials to dope $TiO_2$ and observed an increase in the trapped field and the critical current density up to at least 5 wt % $TiO_2$. The $TiO_2$ was converted to fine $BaTiO_3$ particles which were trapped in YBCO matrix during the sintering process. We observed a peak effect of Jc that can be attributed to $TiO_2$ doping and results suggest that introducing a proper amount of pinning centers can significantly enhance current density.

• 한국결정성장학회지
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• 제12권2호
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• pp.80-86
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• 2002

$Al_{2}O_{3}/SiC$ nanocomposites were made by infiltrating partially sintered alumina bodies with polycarbosilane (PCS) solutions, which is a SiC polymer precursor, with pressureless sintering. The SiC content, densification, phases, strength, and microstructure were investigated with the processing parameters such as PCS solution concentration and heat treatment condition for PCS pyrolysis and sintering. The results were compared with those for pure alumina and nanocomposite samples made by the existing polymer precursor route (i.e. the PCS addition process). The SiC contents of up to 1.5 vol% were obtained by the PCS infiltration. PCS pyrolysis, followed by air heat treatment, was needed before sintering to avoid a cracking problem and to attain a densification as high as 98 % of theoretical. The nanocomposites exhibited significantly higher strength than pure alumina and those prepared by the PCS addition process despite larger grain size. Besides $\alpha-Al_{2}O_{3}/SiC$ and $\beta-SiC$ phases, mullite was present a little in the nanocomposites, which resulted from the reaction of $SiO_{2}$ in the pyrolysis product of PCS with the $Al_{2}O_{3}$ matrix during sintering. The nanocomposites had intagranular particles believed to be SiC, which is a typical feature of $Al_{2}O_{3}/SiC$ nanocomposites.

• Bulletin of the Korean Chemical Society
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• 제25권11호
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• pp.1661-1666
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• 2004

The reaction of titanium tetraisopropoxide with 2 equiv of N,N-diethyl acetoacetamide affords Ti($O^iPr)_2(CH_3COCHCONEt_2)_2$ (1) as colorless crystals in 80% yield. Compound 1 is characterized by spectroscopic (Mass and $^1H/^{13}C$ NMR) and microanalytical data. Molecular structure of 1 has been determined by a single crystal X-ray diffraction study, which reveals that it is a monomeric, cis-diisopropoxide and contains a six coordinate Ti(IV) atom with a cis($CONEt_2$), trans($COCH_3$) configuration (1a) in a distorted octahedral environment. Variable-temperature $^1H$ NMR spectra of 1 indicate that it exists as an equilibrium mixture of cis, trans (1a) and cis, cis (1b) isomers in a 0.57 : 0.43 ratio at -20$^{\circ}C$ in toluene-$d_8$ solution. Thermal properties of 1 as a MOCVD precursor for titanium dioxide films have been evaluated by thermal gravimetric analysis and vapor pressure measurement. Thin films of pure anatase titanium dioxide (after annealing above 500$^{\circ}C$ under oxygen) have been grown on Si(100) with precursor 1 in the substrate temperature range of 350- 500$^{\circ}$ using a bubbler-based MOCVD method.

• Journal of Electrochemical Science and Technology
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• 제15권1호
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• pp.168-177
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• 2024

Ni-rich cathode is one of the promising candidates for high-energy lithium-ion battery applications. Due to its specific capacity, easy industrialization, and good circulation ability, Ni-rich cathode materials have been widely used for lithium-ion batteries. However, due to the limitation of the co-precipitation method, including sewage pollution, and the instability of the long production cycles, developing a new efficient and environmentally friendly synthetic approach is critical. In this study, the Ni_0.91Co_0.06Mn_0.03CO₃ precursor powder was successfully synthesized by an efficient spray-drying method using carbonate compounds as a raw material. This Ni_0.91Co_0.06Mn_0.03CO₃ precursor was calcined by mixing with LiOH·H₂O (5 wt% excess) at 480℃ for 5 hours and then sintered at two different temperatures (780℃/800℃) for 15 hours under an oxygen atmosphere to complete the cathode active material preparation, which is a key component of lithium-ion batteries. As a result, LiNi_0.91Co_0.06Mn_0.03O₂ cathode active material powders were obtained successfully via a simple sintering process on the Ni_0.91Co_0.06Mn_0.03CO₃ precursor powder. Furthermore, the obtained LiNi_0.91Co_0.06Mn_0.03O₂ cathode active material powders were characterized. Overall, the material sintered at 780℃ shows superior electrochemical performance by delivering a discharge capacity of 190.76 mAh/g at 1^st cycle (0.1 C) and excellent capacity retention of 66.80% even after 50 cycles.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.270-273
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• 2012

x mol% (x = 0 ~ 20) Na2CO3 excess Bi2.5Na3.5Nb5O18 (BNN) particles were synthesized using molten salt as a flux. The secondary phases were observed at stoichiometric ratio of BNN precursors and their intensity decreased with increasing Na contents. The results of SEM images showed that all particles existed in a platelet shape and the particle increased in size with higher increasing Na contents. Plate-like NaNbO3 particles were developed using BNN precursor obtained by a topochemical microcrystal conversion. XRD analysis of NaNbO3 particles showed that a single perovskite phase and the intensity of (h00) peaks increased with increasing Na contents in BNN precursor. SEM images showed that the size of plate-like NaNbO3 was significantly changed by controlling Na contents in BNN precursors.

• 공업화학
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• 제8권2호
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• pp.191-196
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• 1997

$Pt/MoO_3/SiO_2$ 촉매계에서의 $50^{\circ}C$ 등온 환원 실험에서 hydrogen spillover는 소성 온도가 증가함에 따라 더욱 빠른 속도로 진행된다. 이는 Pt 표면위에 형성되는 overlayer에 기인하는 것임을 TEM과 CO chemisorption 측정으로 알 수 있었다. 1-butene의 iso-butene으로의 골격이성질화 반응 mechanism은 carbonium ion의 형성과 methyl기의 골격 치환의 2 step으로 알려져 있다. $Pt/MoO_3/SiO_2$ 촉매계에서 약 $250^{\circ}C$에서 calcination하면 iso-butene 수율이 증가한다. 이는 $PtCl_x$ precursor 내에 존재하는 chlorine의 감소에 의한 것과 overlayer 생성에 따라 Pt 표면으로부터 $MoO_3/SiO_2$로의 hydrogen spillover의 증가에 의한 것으로 추측된다.