Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)
- Volume 7 Issue 4
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- Pages.35-39
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- 2008
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- 1738-2270(pISSN)
The study on low dielectric thin film deposition using DEMS precursor by PECVD
DEMS(Diethoxymethylsilane) precursor를 이용한 PECVD 저유전물질 박막증착연구
- Kang, Min-Goo (School of Information Technology Engineering) ;
- Kim, Dae-Hee (Materials Engineering, Korea University of Technology and Education) ;
- Kim, Yeong-Cheol (Materials Engineering, Korea University of Technology and Education) ;
- Seo, Hwa-Il (School of Information Technology Engineering)
- Published : 2008.12.30
Abstract
We studied deposition of low-k SiOCH dielectric film by PECVD. DEMS(diethoxymethlysilane) precursor, which has two ethoxy groups along with one methyl group attached to the silicon atoms, was used as precursor. The SiOCH film was deposited as a function of oxygen flow rates ranging from 0 to 100sccm. The deposition rate(