• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.4
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• pp.498-505
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• 1986

In2O3: Sn(ITO) transparent conducting films were fabricated by the electron beam evaporation method. The dependence of their electrical and optical properties on deposition conditions were examined. The optimum evaporation conditions were such that the deposition rate was 5-10\ulcornersec, oxygen partial pressure was 4x10**_4 torr, substate temperatudre was above 300\ulcorner, and SnO2 doping rate was 10 mol%. The values of sheet resistance and transmittance of the films in visible region fabricated under these optimum conditins were 12\ulcorner/ and 87-99%, respecively. And the energy conversion efficiency of the SIS solar cell fabricated using ITO was 9.16%. It is shown that the transparent conducting films can be applied to the TV camear pick-up tube and solar cell.

• Resources Recycling
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• v.28 no.3
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• pp.59-67
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• 2019

This study was conducted to fabrication pig iron containing copper and to reduce sulfur content pig iron. Roasting test was conducted for 1 ~ 9 hours at each temperature of $500^{\circ}C$, $700^{\circ}C$, and $900^{\circ}C$. In addition, the effect of oxygen partial pressure with 0.5, 0.8, and 1 atm was carried out for 30 minutes at $900^{\circ}C$. It was found that there is no effect to reduce sulfure in pig iron through roasting and oxygen partial pressures. The addition of CaO with 15 wt.% was found to reduce sulfur content up to 0.001 wt.%. The suitable temperature and reactive time for carbothermic reduction were $1600^{\circ}C$ and 30 minutes which shows the highest recovery rate of iron from the copper slag.

• Journal of the Korean Society of Combustion
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• v.22 no.4
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• pp.19-26
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• 2017

This study investigates the gasification of coal char by $CO_2$ under high pressures in a drop tube furnace(DTF). The rate constants are derived for the shrinking core model using the conventional method based on the set reactor conditions. The computational fluid dynamic(CFD) simulations adopting the rate constants revealed that the carbon conversion was much slower than the experimental results, especially under high temperature and high partial pressure of reactants. Three reasons were identified for the discrepancy: i) shorter reaction time because of the entry region for heating, ii) lower particle temperature by the endothermic reaction, and iii) lower partial pressure of $CO_2$ by its consumption. Therefore, the rate constants were corrected based on the actual reaction conditions of the char. The CFD results updated using the corrected rate constants well matched with the measured values. Such correction of reaction conditions in a DTF is essential in deriving rate constants for any char conversion models by $H_2O$ and $O_2$ as well as $CO_2$.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1222-1225
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• 1997

A gaseous oxygen detector has been developed in a configuration of Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al with highly resistive $SnO_x$ layer as the oxygen adsorptive element. In this paper, we present the characteristics of the device in response to oxygen adsoption/desorption under applied d.c. bias. Experimental results showed that the oxygen adsorptive response by the device was reduced significantly under a positive gate bias, for all experimental regions of $O_2$ partial pressure. On the other hand, the application of a negative gate bias increased the device's adsorptive response of oxgyen. A device model concerning this electroadsorption/desorption behavior of the device is provided.

• Korean Chemical Engineering Research
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• v.53 no.4
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• pp.407-411
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• 2015

Dense ceramic membranes have been prepared using the commercial perovsikite $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$, powders synthesized by the solid state reaction method. The as-synthesized powders were compressed into disks with 1.0 mm of thickness and the disk was sintered at $1,100^{\circ}C$ for 2 hr. The oxygen permeation flux of $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ membrane increased with the increasing temperature and oxygen partial pressure. The activation energy for oxygen permeation was increased with the increasing oxygen partial pressure. Oxygen permeation flux at $950^{\circ}C$ were measured at various flow rates of feed and sweep gas. It has been demonstrated that oxygen permeability increased at elevated flow rates of both gases, but the sweep gas is more influential.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• Journal of Surface Science and Engineering
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• v.23 no.2
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• pp.18-23
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• 1990

Thin films of tin oxide were prepared by chemical vapor deposition (C.V>D) using the hydrolysis reaction of SnCl4, Deposition rate increased with the increase of temperature up to $500^{\circ}C$and then decreased at $700^{\circ}C$, Deposition rate with SnCl4 partial pressure showed RidealEley behavir. It was found that SnO2 thin film deposited at the temperature above $400^{\circ}C$ had(110) and (301) plane preferred orientation with crystallinity of rutite structure. Electrical resisvity of SnO2 thin film decreased with increase increase of deposition temperature and showed minimum value of 10-3 ohm at $500^{\circ}C$and than largely increased increased with further increase of deposition temperture.

• Applied Chemistry for Engineering
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• v.16 no.1
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• pp.123-130
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• 2005

Zeolite X adsorbents with large surface area were prepared for using oxygen PSA adsorbent. Selective adsorption performance of nitrogen on the synthesized zeolite X adsorbent was improved by the cation exchange of adsorbent. The zeolite X which had over $650m^2/g$ surface area was synthesized at the conditions of $SiO_2\;:\;Na_2O\;:\;H_2O\;:\;Al_2O_3$ = 2.5 : 3.5 : 150 : 1 mole ratio, $98^{\circ}C$ temperature and 18 h synthesized time in 50 L reactor. The metal ions Li, Ag, Ca, Br, Sr, etc. were investigated for ion exchange with zeolite X. Ag ion was showed the highest ion exchange rate among these metal ions and all metal ions were exchanged with Na ion at equivalent rate. Compared with the NaX adsorbent, the ion exchanged zeolite X adsorbent remarkably improved its adsorption performance of nitrogen at the conditions of $10{\sim}40^{\circ}C$ temperature and 0~9 atm pressure. At an equilibrium pressure under 0.5 atm, adsorption performance of nitrogen on the ion exchanged zeolite adsorbent increased in the order of Ag > Li > Ca > Sr> Ba > K, whereas at an equilibrium pressure over 1 atm showed in the order of Li > Ag > Ca > Sr > Ba > K. Nitrogen/oxygen separation factor of Li ion exchanged zeolite X adsorbent was 13.023 at the partial pressure of nitrogen/oxygen gas mixture similar to air and $20^{\circ}C$ adsorption temperature.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.82-87
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• 1998

In the oxidation process of the $NH_3/O_2$ oxidation method, adding $NH_3$ gas to $O_2$ gas, the detected outlet gases in the reaction quartz chamber are N2, $O_2$ and $H_2O$ and in addition, a very small quantity of $CO_2$, NO and $NO_2$ are detected. Two kinds of species ($O_2$ and H2O) contribute to oxidation, so the growth rate is determined by oxidation temperature and by also partial pressure of the NH3 and $O_2$ gases. The slop of growth rate is identified to be medial and in parallel between that of the dry and wet oxidation. Auger electron spectroscopy (AES) indicates that $NH_3/O_2$ oxide film has a certain stoichiomerty of $SiO_2$, this oxidation method restrains the generation of defects in the $SiO_2/Si$ interface, minimizing fixed charges. The breakdown voltage of $NH_3/O_2$ oxide film (470$\AA$) is 57.5 volts, and the profile of the C-V curve including flat band voltage (0.29 volts) agree with the ideal curve.

• Resources Recycling
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• v.16 no.3 s.77
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• pp.44-49
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• 2007

In the present work, the high temperature oxygen pressure leaching behavior of chalcopyrite was studied in sulfuric acid solution. The influence of leaching time, temperature and oxygen partial pressure on leaching process were examined. Leaching rate of copper increased significantly with increasing leaching temperature. Copper recovery reached 87.1% within 2 hours at $200^{\circ}C$ and 10 atm oxygen pressure, while most of the solubilized iron readily re-precipitates as hematite($Fe_2O_3$). It was confirmed that e main leach reaction of chalcopyrite occurred through oxidation with oxygen under oxygen pressure and high temperature(above $150^{\circ}C$). Because sulfur was oxidized entirely to sulfate, passivating elemental sulfur layer was not formed.