Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Oxygen Adsorption/Desorption Reaction of Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al Capacitor

D.C. 전압 인가에 의한 Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al 캐패시터의 산소흡착/탈착 반응

  • Lee, Jae-Hong (Department of Electrical Engineering, Soonchunhyang University) ;
  • Lee, Joo-Hun (Department of Electrical Engineering, Soonchunhyang University) ;
  • Kim, Chang-Kyo (Department of Electrical Engineering, Soonchunhyang University)
  • 이재흥 (순천향대학교 전기.전자공학부) ;
  • 이주헌 (순천향대학교 전기.전자공학부) ;
  • 김창교 (순천향대학교 전기.전자공학부)
  • Published : 1997.07.21
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Abstract

A gaseous oxygen detector has been developed in a configuration of Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al with highly resistive $SnO_x$ layer as the oxygen adsorptive element. In this paper, we present the characteristics of the device in response to oxygen adsoption/desorption under applied d.c. bias. Experimental results showed that the oxygen adsorptive response by the device was reduced significantly under a positive gate bias, for all experimental regions of $O_2$ partial pressure. On the other hand, the application of a negative gate bias increased the device's adsorptive response of oxgyen. A device model concerning this electroadsorption/desorption behavior of the device is provided.

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