• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.75-81
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• 2018

The effect of $Ar-N_2$ plasma treatment on Cu surface as one of solutions to realize reliable Cu-Cu wafer bonding was investigated. Structural characteristic of $Ar-N_2$ plasma treated Cu surface were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope. Ar gas was used for a plasma ignition and to activate Cu surface by ion bombardment, and $N_2$ gas was used to protect the Cu surface from contamination such as -O or -OH by forming a passivation layer. The Cu specimen under high Ar partial pressure plasma treatment showed more copper oxide due to the activation on Cu surface, while Cu surface after high $N_2$ gas partial pressure plasma treatment showed less copper oxide due to the formation of Cu-N or Cu-O-N passivation layer. It was confirmed that nitrogen plasma can prohibit Cu-O formation on Cu surface, but nitrogen partial pressure in the $Ar-N_2$ plasma should be optimized for the formation of nitrogen passivation layer on the entire surface of Cu wafer.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.43-48
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• 2017

Conductive $Sn_xO_y$ thin films were fabricated via RF reactive sputtering using SnO:Sn (80:20 mol%) composite target. The composite target was used to produce a chemically stable composition of $Sn_xO_y$ thin film while controlling structural defects by chemical reaction between tin and oxygen. During sputtering pressure, RF power, and substrate temperature were fixed, and oxygen partial pressure was varied from 0% to 12%. Annealing process was carried out at $300^{\circ}C$ for 1 hour in vacuum. Except $P_{O2}=0%$ sample, all samples showed the transmittance of 80~90% and amorphous phase before and after annealing. Electrically stable p-type $Sn_xO_y$ thin film with high transmittance was only obtained from the oxygen partial pressure at 12%. The carrier concentration and mobility for the $P_{O2}=12%$ were $6.36{\times}10^{18}cm^{-3}$ and $1.02cm^2V^{-1}s^{-1}$ respectively after annealing.

• Applied Chemistry for Engineering
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• v.2 no.2
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• pp.138-146
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• 1991

$Pd/SiO_2-Al_2O_3$ catalysts were prepared for the synthesis of pyridine and ${\beta}$-picoline from acrolein and ammonia. The activity of these catalysts decreased considerably by the formation of deposits on catalyst surface during the reaction. TPR study showed that the deposits were formed by the condensation polymerization of acrolein and ammonia. The conversion and production rate of pyridine and ${\beta}$-picoline decreased with the partial pressure of acrolein. The amount of deposits and the regeneration temperature of spent catalysts increased with the partial pressure of acrolein but they were independent of the concentration of ammonia.

• Journal of Electrical Engineering and Technology
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• v.7 no.6
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• pp.959-964
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• 2012

Internal pressure of vacuum interrupter (VI) is one of the most important parameters in VI operation and may increase due to the outgassing from the materials inside VI or gas permeation through metal flange or ceramic vessel. The increase of the pressure above a certain level leads to the failures of switching or insulation. Therefore, an effective pressure check of VI is essential and an analysis of partial discharge (PD) characteristics is an effective monitoring method to identify the degree of the internal pressure of VI. This paper introduces a research work on monitoring the internal pressure of VI by analyzing PDs which were measured using a capacitive PD coupler. The authors have developed cost effective capacitive coupler based on the ceramic material that has an excellent insulation properties and the main component of the capacitive coupler is made by SrTiO3. Detectable internal pressure range and distinguishability of the internal pressure of VI were investigated. From the PD tests results, the internal pressure range, from $10^{-2}$ torr to 500 torr, can be monitored by PD measurements using the capacitive coupler and PD inception voltage (PDIV) follows the Paschen's law. In addition, rise time of PD pulse at 13.2kV decreases with the increase of the internal pressure of VI.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.426-432
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• 2011

The oxidation behavior of CVD ${\beta}$-SiC was investigated for Very High Temperature Gas-Cooled Reactor (VHTR) applications. This study focused on the surface analysis of the oxidized CVD ${\beta}$-SiC to observe the effect of impurity gases on active/passive oxidation. Oxidation test was carried out at $950^{\circ}C$ in the impurity-controlled helium environment that contained $H_2$, $H_2O$, CO, and $CH_4$ in order to simulate VHTR coolant chemistry. For 250 h of exposure to the helium, weight changes were barely measurable when $H_2O$ in the bulk gas was carefully controlled between 0.02 and 0.1 Pa. Surface morphology also did not change based on AFM observation. However, XPS analysis results indicated that a very small amount of $SiO_2$ was formed by the reaction of SiC with $H_2O$ at the initial stage of oxidation when $H_2O$ partial pressure in the CVD ${\beta}$-SiC surface placed on the passive oxidation region. As the oxidation progressed, $H_2O$ consumed and its partial pressure in the surface decreased to the active/passive oxidation transition region. At the steady state, more oxidation did not observable up to 250 h of exposure.

• Journal of the Korean Chemical Society
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• v.36 no.4
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• pp.511-516
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• 1992

The x-values of the nonstoichiometric compound YbO$_x$ have been measured in a temperature range of 600 to 1150$^{\circ}C$ under oxygen partial pressure of 1.00 ${\times}$ 10$^{-2}$ atm∼atmospheric air pressure. The values are varied between 1.55453 and 1.60794 in the conditions. The enthalpy of the formation for x' in YbO$_{1.5＋x'}$(${\Delta}$H$_f$) was 1.55, 1.18, and 1.05 kJ/mol under the above conditions, respectively. The electrical conductivities of the oxides or ${\sigma}$ have been measured in the temperature range from 600 to 1100$^{\circ}C$ under oxygen partial pressure of 1.00 ${\times}$ 10$^{-5}$ ∼ 2.00 ${\times}$ 10$^{-1}$ atm. They varied from 10$^{-9}$ to 10$^{-5}$ ohm$^{-1}$ cm$^{-1}$ within the semiconductor range. The Arrhenius plots of the electrical conductivities show a linearity and the activation energy for the conduction was about 1.7eV. The oxygen partial pressure dependence of the conductivity or 1/n value increases with the pressure. The nonstoichiometric conduction mechanism of the oxide was discussed in terms of the x values, ${\sigma}$ values, and the thermodynamic data.

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.601-606
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• 2009

$BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.241-241
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• 2007

We fabricated SmBCO coated conductors(CCs) on IBAD-MgO templates using co-evaporation method. IBAD-MgO templates consist of PLD-LMO/epi-MgO/IBAD-MgO/Ni-alloy and showed good in-plane texture of below FWHM 7 degree. Evaporation rates of Sm, Ba, and Cu were precisely controlled to get the optimum composition ratio after deposition process. To optimize the oxygen partial pressure of reaction region, wide range of the partial pressure was investigated from 1 mTorr to 15 mTorr. By reducing the oxygen partial pressure to 5mTorr, (103)grains in SmBCO layer have been increased. On the other hand, there were only (001)grains in SmBCO layer deposited at 15 mTorr $O_2$. Deposition temperature was also investigated from $600^{\circ}C\;to\;800^{\circ}C$ to make high Ic SmBCO CCs. SmBCO on IBAD MgO template showed that the Ic increased gradually at higher growth temperature to $800^{\circ}C$, which the highest Jc and Ic is $2.6\;MA/cm^2$ and 500 A/cm-w., respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.349-355
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• 2002

The ionic conductivity of cubic solid solutions in the systems of CaO-$ZrO_2$, $Y_2O_3-ZrO_2$ prepared by SHS was examined. The higher conductivity appears to be related to a lower activation energy rather than to the number of oxygen vacancies dictated by composition. Conductivity-temperature data was obtained at 1000 $^{\circ}C$ in atmosphere of low oxygen partial pressure (~$10^{-40}$ atm) for $Y_2O_3-ZrO_2$ cubic solid solutions. The data indicated that these materials could be reduced, and the decree of reduction would be related with the measuring electric field.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.309-315
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• 1982

$FeAl_2O_4$ was formed from the starting material of $Fe_2O_3$ and $Al_2O_3$ by controlling the oxygen partial pressure using $H_2-CO_2$ gas mixture, over the temperature range of 800~120$0^{\circ}C$. The formation mechanism of $FeAl_2O_4$ was found to be a second order chemical reaction, and the activation energy of formation was observed as 39.97 kcal/mole. Vaporization behavior of $FeAl_2O_4$ under $CO_2$ atmosphere was observed over the temperature range of 800~120$0^{\circ}C$. $FeAl_2O_4$ was vaporized by a second order chemical reaction and the activation energy was found to be 21.8kcal/mole. Electrical conductivity of $FeAl_2O_4$ was also measured.