• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.514-519
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.243-249
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• 1999

A magnetic field sensor is fabricated with superconducting ceramics of Y-Ba-Cu-O system. The prepared material shows the superconductivity at about 95K. The sensor at liquid nitrogen temperature shows the increase in electrical resistance by applying magnetic field. Actually, the voltage drop across the sensor is changed from zero to a value. more than $100{\mu}V$ by the applied magnetic field. The change in electrical resistance depends on magnetic field. The sensitivity of this sensor is 2.9 ohm/T. The sensing limit is about $1.5{\times}10^{-5}T(=1.5{\times}10^{-1}G)$. The increase in electrical resistance by the magnetic field is ascribed to a modification of the Josephson junctions due to the penetrating magnetic flux into the superconducting material.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.3
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• pp.594-599
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• 2011

A SAW strain sensor based on Shear Horizontal wave with an 92 MHz central frequency was developed. It consists of SAW sensor, PCB substrate and bonding material (Loctite 401). External force applied to PCB substrate bonded to a piezoelectric substrate induces strain at the substrate surface, which causes changes in the elastic constant and density of the substrate and hence the propagation velocity of the SAW. The change in the velocity of the SAW result in a frequency shift of the sensor and by measuring a frequency shift, we can extract the strain induced by the external force. The $41^{\circ}$ YX $LiNbO_3$ was used because it has a Leaky shear horizontal(SH) wave propagation mode and a high electromechanical coupling coefficient ($K^2$=17.2%). And to compare with Rayleigh wave mode, $128^{\circ}$ YX $LiNbO_3$ was used. And to make a stable and low insert loss, Split IDT structure was used. The obtained sensitivity and linearity of the SAW strain sensor in the case of Split IDT were measured to be 17.2 kHz / % and 0.99, respectively.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.1-10
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• 1996

Transparent conducting $SnO_2$-based thin films have been coated on float substrates such as fused quartz, and ceramic fiber cloths such as the Nexel and E-glass cloth from tin alkoxides by the sol-gel technique. Also, thin films of alternating layers of $SnO_2$ and $SiO_2$ have been fabricated by dip coating. The sheet resistance and average visible transmittance of the films were investigated in the aspect of the applications as transparent electrodes such as liquid crystal displays, photo-detectors and solar cells. The Nextel and E-glass cloths coated with antimony-doped tin oxide (ATO) had sheet resistance of as low as $20 \;ohm/{\Box}$ and $120ohm/\;{\Box}$, respectively. The promotion effects of additives as $La_2O_3$ and Pt on the ethanol gas sensing properties of the films were investigated in the aspects of the applications as an alcohol sensor and a breath alcohol checker. Possible evidence of quantum well effects in the oxide multilayers of $SnO_2$ and $SiO_2$ was investigated.

• ETRI Journal
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• v.30 no.4
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• pp.516-525
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• 2008

This paper proposes a compact, energy-efficient, and smart gas sensor platform technology for ubiquitous sensor network (USN) applications. The compact design of the platform is realized by employing silicon-on-insulator (SOI) technology. The sensing element is fully integrated with SOI CMOS circuits for signal processing and communication. Also, the micro-hotplate operates at high temperatures with extremely low power consumption, which is important for USN applications. ZnO nanowires are synthesized onto the micro-hotplate by a simple hydrothermal process and are patterned by a lift-off to form the gas sensor. The sensor was operated at $200^{\circ}C$ and showed a good response to 100 ppb $NO_2$ gas.

• Journal of Sensor Science and Technology
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• v.28 no.4
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• pp.231-235
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• 2019

We investigated the facile and effective strategy for sensitive and selective $C_2H_5OH$ sensors based on the In-decorated NiO nanoigloos. The In-decorated NiO nanoigloos is fabricated by RF sputtering using 750 nm-diameter polystyrene beads using a soft-template. The morphological evolution based on the Van der Drift model was generated through a heterojunction between In metal and NiO, resulting in a pyramidal rough surface. Upon decorating the In on the NiO surface, high sensitivity and selectivity to $C_2H_5OH$ were observed, and gas sensing mechanism was demonstrated by a high surface-to-volume and double Schottky barrier. We are confident that the method presented in this study will have a significant impact on the fabrication of effective nanostructures and their application for the gas sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.347-350
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• 1995

In this paper, we fabricated fuel shortage detecting sensor, utilizing NTC thermistor concerned with Mn-Ni-Co system. We would be obtained B constant value of 1930∼2080 and resistivity 387∼430(ohm-cm) additive Bi$_2$O$_3$0∼0.5 wt% to Mn$_3$O$_4$:9wt%, Co$_3$O$_4$:61wt%, NiO:28wt% under 1150∼1250$^{\circ}C$ of sintering temperature. In sensor, we obtained characteristics, which we want, in resistance range 850∼l150$\Omega$, B constant 2000${\pm}$5%. we can see 15 multiplied differences between gasoline and heat dissipation coefficient of air condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.229-234
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• 2017

In this study, we fabricated a TFT gas sensor with ZnO nanorods grown by hydrothermal synthesis. The suggested devices were compared with the conventional ZnO film-type TFTs in terms of the gas-response properties and the electrical transfer characteristics. The ZnO seed layer is formed by atomic-layer deposition (ALD), and the precursors for the nanorods are zinc nitrate hexahydrate ($Zn(NO_3)_2{\cdot}6H_2O$) and hexamethylenetetramine ($(CH_2)6N_4$). When 15 ppm of NO gas was supplied in a gas chamber at $150^{\circ}C$ to analyze the sensing capability of the suggested devices, the sensitivity (S) was 4.5, showing that the nanorod-type devices respond sensitively to the external environment. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which showed that the oxygen deficiency of ZnO nanorods is higher than that of ZnO film, and confirms that the ZnO nanorod-type TFTs are advantageous for the fabrication of high-performance gas sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.27-28
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• 2005

본 연구에서는$Cr_2O_3$ 와 $Nb_2O_5$ 를 첨가한 $Pb(Zr_{0.54}Ti_{0.48})O_3$ 세라믹스에서 $Nb_2O_5$ 첨가량에 따른 소결 및 압전, 유전특성을 조사하였다. $Pb(Zr_{0.54}Ti_{0.48})O_3$ + 0.2 wt% $Cr_2O_3$ + wt% $Nb_2O_5$ ($0.{\sim}2wt.%$)의 첨가량에 따른 압전, 유전특성 및 미세구조에 관해 연구하였다. 본조성에서 $Nb_2O_5$ 첨가량이 증가함에 따라 입경의 크기는 증가하였으며, 0.5 wt% $Nb_2O_5$ 첨가조성에서 $4\sim5\mu m$의 최대 평균입경을 보이다가 그 이상의 첨가 조성에서 급격히 감소하였다. 유전상수와 kp 는 $Nb_2O_5$ 첨가량이 1.0 wt% 조성까지 증가하였다가 그 이상 조성에서 감소하였다. $Nb_2O_5$ 첨가량이 증가함에 따라 삼방정(rhombohedral)구조에서 정방정(tetragonal)구조로 상전이 일어났으며, 본 조성의 상경계 영역인 0.5 wt% 조성에서 $\varepsilon_r$ = 730, $k_p$ = 0.72, $d_{33}$ = 450, $g_{33}$ = 70의 우수한 압전 특성을 나타내었다. 이러한 조성은 접촉센서용 복합압전소재의 실용가능성을 제시하였다.