• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Fire Science and Engineering
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• v.33 no.6
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• pp.20-27
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• 2019

In this study, a new function with higher accuracy for fire heat release rate prediction was developed. The 'αt²' curve, which is the major exponential function currently used for fire engineering calculations, must be improved to minimize the prediction gap that causes fire system engineering inefficiency and lower cost-effectiveness. The newly developed prediction function was designed to cover the initial fire stage that features rapid growth based on logistic function theory, which has a more logical background and graphical similarity compared to conventional exponential function methods for 'αt²'. The new function developed in this study showed apparently higher prediction accuracy over wider range of fire growth durations. With the progress of fire growth pattern studies, the results presented herein will contribute towards more effective fire protection engineering.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1690-1691
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• 2011

본 논문에서는 H1N1 인플루엔자 A 바이러스(influenza A H1N1 virus) 검출을 위한 산화아연 나노구조(zinc oxide nano structure) 기반의 전기화학적 면역센서를 제작하고 그 특성을 분석하였다. H1N1 인플루엔자 A 바이러스는 빠른 전파 속도 때문에 정확하고 빠른 검출이 필요하다. 먼저, 2 $mm^2$의 표면적을 갖는 패턴된 금 전극 위에 열수방식(hydrothermal method)으로 성장시킨 산화아연 나노구조가 선택적으로 형성되도록 리프트-오프(lift-off) 방법을 사용하였다. 0.01 M phosphate buffered saline(pH 7.4)에서 2 ${\mu}g$/mL 농도의 1차 항체를 정전기력에 의해 산화아연 나노구조에 고정화한 후, 10 pg/mL ~ 5ng/mL 농도의 H1N1 항원을 적용하여 포획 항체에 결합시키고 HRP(horseradish peroxidase) 효소가 결합된 검출 항체를 항원에 결합시키는 샌드위치 ELISA법을 이용하였다. HRP와 반응하는 TMB(3,3', 5,5'-tetramethylbenzidine)와 과산화수소가 포함된 acetate buffered 용액(pH 5)을 전해질로 사용하고 순환전압전류 측정법(cyclic voltammetry)으로 센서의 특성을 분석하였다. 측정된 순환전압전류그래프(cyclic voltammogram)에서 H1N1 항원 농도 10 pg/mL ~ 5 ng/mL의 응답 전류는 276.47 ${\pm}$ 21.72 nA (평균 ${\pm}$ 표준편차, n=4) ~ 478.89 ${\pm}$ 6.21 nA로 측정되었고, logarithmic하게 증가하는 응답 전류 특성을 보였다.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.324-327
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• 2020

The impact of output conductance (g_o) on the short-circuit current-gain cut-off frequency (f_T) in In_0.8Ga_0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of f_T in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for f_T in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with L_g from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (g_oi) on f_T was negligible. This was because, from the simplified SSM perspective, three model parameters, such as g_{m_ext}, C_{gs_ext} and C_{gd_ext}, were weakly dependent on g_oi. However, in short-channel devices, g_oi was found to play a significant role in degrading f_T as L_g was scaled down. The increase in g_oi in short-channel devices caused a considerable reduction in g_{m_ext} and an overall increase in the total extrinsic gate capacitance, yielding a decrease in f_T with g_oi. Finally, the results were used to infer how f_T is influenced by g_oi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down L_g.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.8-13
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• 2014

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.

• Journal of Biosystems Engineering
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• v.36 no.3
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• pp.163-170
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• 2011

Analysis of load on major parts of the tractor power drive line is critical for efficient and optimum design of a tractor. The purpose of this study was to evaluate severeness of the tractor PTO driving axle during rotary tillage operation. First, S-N (stress vs. number of cycle) curve of a PTO driving gear was obtained through the fatigue life test using a PTO dynamometer. Second, PTO severeness was evaluated during rotary tillage operation. Torque measurement system was constructed with strain-gauge sensors to measure torque of a PTO axle, an I/O interface to acquire the sensor signals, and an embedded system to calculate severeness. The severeness of PTO was analyzed using measured torque data during rotary tillage. In the PTO gear life fatigue test, breakage time and bending stress of the gear were measured by tooth widths and torque change during the fatigue life test. The S-N curve showed a good linear relationship between bending stress and number of cycle (life) with a coefficient of determination of 0.97. For PTO severenss evaluation, rotary tillage operations were conducted at two PTO rotational speeds (level-1, level-2) under different paddy and upland field sites with different soil conditions. Results of averaged relative severeness for PTO level-1 and PTO level-2 were 1.96 and 3.34, respectively, at paddy field sites, and they were 1.36 and 2.51, respectively, at upland field sites. The results showed that the PTO driving axle experienced more severe load during rotary tillage at paddy fields than at upland sites, and relative severeness was greater at the higher PTO rotational speed under all of the soil conditions.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.130-135
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• 2013

This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

• Journal of Internet Computing and Services
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• v.13 no.2
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• pp.59-71
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• 2012

PKI-based public key scheme is outstanding in terms of authenticity and privacy. Nevertheless its application brings big burden due to the certificate/key management. It is difficult to apply it to limited computing devices in WSN because of its high encryption complexity. The Bilinear Pairing emerged from the original IBE to eliminate the certificate, is a future significant cryptosystem as based on the DDH(Decisional DH) algorithm which is significant in terms of computation and secure enough for authentication, as well as secure and faster. The practical EC Weil Pairing presents that its encryption algorithm is simple and it satisfies IND/NM security constraints against CCA. The Random Oracle Model based IBE PKG is appropriate to the structure of our target system with one secret file server in the operational perspective. Our work proposes modification of the Weil Pairing as proper to the closed network for secret file distribution[2]. First we proposed the improved one computing both encryption and message/user authentication as fast as O(DES) level, in which our scheme satisfies privacy, authenticity and integrity. Secondly as using the public key ID as effective as PKI, our improved IBE variant reduces the key exposure risk.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.295-303
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• 2001

White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

• Journal of Life Science
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• v.22 no.2
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• pp.281-284
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• 2012

This study demonstrated that upregulation of gene expression of endoplasmic reticulum (ER) stress chaperones (Bip, ERp29, calnexin, and PDI), ER stress sensors (PERK, ATF6, and Ire1), and cAMP phosphodiesterase 7A1 (cAMP PDE7A1) was induced by ER stresses in FRTL5 cells. While removing A23187 from the culture medium restored upregulation of cAMP PDE7A1 gene expression, removal of thapsigargin did not recover its expression. In addition, cAMP PDE7A1 gene expression was strongly inhibited by treatment with A23187 combined with thyroid stimulating hormone (TSH). The results are the first to show that ER stress induces cAMP PDE7A1 gene expression.