• Title/Summary/Keyword: $O_2$ Sensor

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The Fabrication of Micro-Heaters with Low-Power Consumption Using SOI and Trench Structures

  • Chung, Gwiy-Sang;Hong, Seok-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05a
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    • pp.197-201
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    • 2002
  • This paper presents optimized design, fabrication and thermal characteristics of micro-heaters for thermal MEMS (micro electro mechanical system) applications using SOI and trench structures. The micro-heaters are based on a thermal measurement principle and contains thermal isolation regions of 10 ${\mu}m$-thick Si membranes consisting of oxide-filled trenches in the SOI membrane rim. The micro-heaters were fabricated with Pt-RTD on the same substrate via MgO buff layer between Pt thin-film and $SiO_2$ layer. The thermal characteristics of micro-heater with trench-free SOI membrane structure was $280^{\circ}C$ at input power 0.9 W; in the presence of 10 trenches, it was $580^{\circ}C$ due to reduction of the external thermal loss. Therefore, a micro-heater with trenches in SOI membrane rim structure provides a powerful and versatile alternative technology for enhancing the performance of micro-thermal sensors and actuators.

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Organopalladium(II) Complexes as Ionophores for Thiocyanate Ion-Selective Electrodes

  • Kim, Dong-Wan;Lee, So-Hyun;Kim, Jung-Hwan;Kim, Jin-Eun;Park, Jong-Keun;Kim, Jae-Sang
    • Bulletin of the Korean Chemical Society
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    • v.30 no.10
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    • pp.2303-2308
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    • 2009
  • A thiocyanate poly(vinyl chloride) (PVC) membrane electrode based on [1,2-bis(diphenylphosphino)ethane]dihalopalladium( II), [(dppe)$PdX_2$, X = Cl ($L^1$), X = I ($L^2$)] as active sensor has been developed. The diiodopalladium complex, [(dppe)$PdI_2](L^2$) displays an anti-Hofmeister selectivity sequence: $SCN^-\;>\;I^-\;>\;{ClO_4}^-\;>\;Sal^-\;>\;Br^-\;>\;{NO_2}^-\;>\;{HPO_4}^-\;>\;AcO^-\;>\;{NO_3}^-\;>\;{H_2PO_4}^-\;>\;{CO_3}^{2-}$. The electrode exhibits a Nernstian response (-59.8 mV/decade) over a wide linear concentration range of thiocyanate ($(1.0\;{\times}\;10^{-1}\;to\;5.0\;{\times}\;10^{-6}$ M), low detection limit ($(1.1\;{\times}\;10^{-6}$ M), fast response $(t_{90%}$ = 24 s), and applicability over a wide pH range (3.5∼11). Addition of anionic sites, potassium tetrakis[p-chlorophenyl] borate (KTpClPB) is shown to improve potentiometric anion selectivity, suggesting that the palladium complex may operate as a partially charged carrier-type ionophore within the polymer membrane phase. The reaction mechanism is discussed with respect to UV-Vis and IR spectroscopy. Application of the electrode to the potentiometric titration of thiocyanate ion with silver nitrate is reported.

Characteristics and Fabrication of Thermal Oxidized-SnO2 (SnO2 열산화감지막의 제작 및 특성)

  • Kang, Bong-Hwi;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.11 no.6
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    • pp.342-349
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    • 2002
  • New formation technique of metal oxide sensing film was proposed m this paper. Silicon wafer with Pt electrodes was used as a substrate for depositing metal Sn film. Metal Sn was deposited in the state of not continuous film but only island state. The samples were prepared to obtain the optimal condition of metal Sn deposition. The resistances of deposited Sn onto Pt electrodes amounted to $1\;k{\Omega}$, $5\;k{\Omega}$, $10\;k{\Omega}$ and $50\;k{\Omega}$, respectively. Also The sample with $1,500\;{\AA}$ thickness of Sn was prepared m order to compare sensing properties between conventional type and proposing type. After deposition of metal Sn, $SnO_2$ was formed by thermal oxidation method for 3 hrs. in $O_2$ ambient at $700^{\circ}C$. Surface morphology, crystal structure and surface roughness of oxidized-sensing film were examined by SEM, XRD, and AFM, respectively. From the results of these analyses, the optimal deposition condition of Sn was that the Pt electrode resistance became $10\;k{\Omega}(300\;{\AA})$. Also, the sensing characteristics of fabricated sensing film for various concentrations of butane, propane and carbon monoxide gases were measured at he operating temperatures of $250^{\circ}C$, $300^{\circ}C$ and $350^{\circ}C$, respectively. Although catalyst as not added to the sensing film, it has exhibited the high sensitivity to all the test gases.

Implementation on the Portable Blood Gas Analyzer and Performance Estimation (휴대형 혈액가스분석 시스템의 구현 및 성능평가)

  • Jeong, Do-Un;Jeon, Gye-Rok;Bae, Jin-Woo;Kim, Gil-Jung;Sim, Yoon-Bo
    • Journal of Sensor Science and Technology
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    • v.12 no.1
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    • pp.34-43
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    • 2003
  • In this study, we implemented the measurement of pH, $pO_2$, $pCO_2$ of the arterial blood on a portable blood gas analysis system. This system is consist of two parts of hardware and software. The hardware part is divided into a fluidic mechanism and an electronic circuit unit. The system program is composed of operating, washing, correcting, and measuring routines. Both of 1-point and 2-point calibration schemes were used to enhance the accuracy of the measurement. In order to evaluate the performance of the developed system, we measured and performed statistical analysis on the characteristics of the sensing electrode response. As a result, coefficient variation was within 1.12, and maximum error was within 1.298%. We confirmed development possibility of portable blood gas analyzer.

Acquisition of Data of Equipments on Shop Floor Using Interface Between Various Equipments (다양한 생산 설비와의 인터페이스를 고려한 설비정보 수집)

  • Nam, So-Jeong;Lee, Jai-Kyung;Lee, Sung-Woo;Park, Jong-Kweon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.35 no.2
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    • pp.149-156
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    • 2011
  • There is much information of equipment in shop floor because the manufacturing processes are different as the equipment within the manufacturing process is varied. To provide effective process information to MES and other production systems, the DAS requires an equipment monitoring system that takes into account the characteristics of the equipment on the shop floor. In this study, we proposed some methods for collecting the required information about various equipments on a shop floor. The equipments such as CNC can be interfaced with the DAS by using a PLC-based method and a sensor-based interface board can be used to interface general equipments. The proposed methods can be used to collect information on the shop floor in real-time. Moreover these methods are very adaptive and can be easily modified according to the changes made to the shop floor. The information about a real shop floor acquired by employing these methods is saved in a database and the can be provided to a supervisor and MES so that they are aware of the status of the shop floor.

COMPARATIVE STUDY OF DIRECT DIGITAL RADIOGRAPHIC SYSTEM WITH FILM-BASED DIGITAL IMAGING SYSTEM USING EKTASPEED AND EKTASPEED PLUS FILM (직접 디지탈 방사선 촬영시스템과 Ektaspeed 및 Ektaspeed Plus 필름을 이용한 방사선 사진용 디지탈 영상시스템과의 비교 연구)

  • Do Jung-Joo;Kim Eun-Kyung
    • Journal of Korean Academy of Oral and Maxillofacial Radiology
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    • v.25 no.1
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    • pp.51-70
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    • 1995
  • The purpose of this investigation was to compare the direct digital radiographic system with film-based digital imaging system using Ektaspeed and Ektaspeed Plus film with respect to image characteristics and detectability and evaluate the sensor noise with the use of subtraction method. Direct digital radiographic system which used was Sens-A-Ray system(Regam Medical Systems, Sundsvall, Sweden) and film-based digital imaging system was composed of Macintosh II ci computer, high resolution Sony XC-77 CCD camera and intraoral x-ray film(Kodak Ektaspeed film, Kodak Ektaspeed Plus film). Images were taken by using CCD sensor of Sens-A-Ray system, Ektaspeed film and Ektaspeed Plus film with variable exposure time(0.06s, 0.1s, 0.16s, 0.2s, 0.3s, 0.4s, 0.5s, 0.6s, O.8s, LOs), 5 times at each exposure time. And then ektaspeed films and ektaspeed plus films were digitized using CCD camera. Image groups were divided into 3 groups; Sens-A-Ray group(direct digital radiographic system), Ektaspeed group and Ektaspeed Plus group (film-based digital imaging system) They were assessed by the following three aspects; image density, image contrast and detectability and sensor noise of Sens-A-Ray system was also evaluated. The results were as follow : 1. S group showed higher density than E , EP group except at the low exposure time(p<0.01). 2. S group showed higher contrast than E,EP group except at the high exposure time(p<0.01). 3. All groups showed good detectability at the each proper exposure time. Lowest exposure time which shows maximum detectability in S,EP group(0.5s) was lower than that in E group(0.6s). 4. Sensor noise of Sens-A-Ray system generally increased according to exposure time. On the basis of the above results, it was considered that Sens-A-Ray system could show higher speed, higher contrast than Ektaspeed, Ektaspeed Plus film except at too high and low exposure time and the same detectability as the conventional intraoral film.

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Study on the Enhanced Specific Surface Area of Mesoporous Titania by Annealing Time Control: Gas Sensing Property (열처리 시간에 따른 메조기공 타이타니아의 비표면적 향상 연구: 가스센싱 특성 변화)

  • Hong, M.-H.;Park, Ch.-S.;Park, H.-H.
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.2
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    • pp.21-26
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    • 2015
  • Mesoporous ceramic materials were applied in various fields such as adsorbent and gas sensor because of low thermal conductivity and high specific surface area properties. This structure could be divided into open-pore structure and closed-pore structure. Although closed-pore structure mesoporous ceramic materials have higher mechanical property than open-pore structure, it has a restriction on the application because the increase of specific surface area is limited. So, in this work, specific surface area of closed-pore structure $TiO_2$ was increased by anneal time. As increased annealing time, crystallization and grain growth of $TiO_2$ skeleton structured material in mesoporous structure induced a collapse and agglomeration of pores. Through this pore structural change, pore connectivity and specific surface area could be enhanced. After anneal for 24 hrs, porosity was decreased from 36.3% to 34.1%, but specific surface area was increased from $48m^2/g$ to $156m^2/g$. CO gas sensitivity was also increased by about 7.4 times due to an increase of specific surface area.

Fabrication of Thick Silicon Dioxide Air-Bridge and Coplanar Waveguide for RF Application Using Complex Oxidation Process and MEMS Technology (복합 산화법과 MEMS 기술을 이용한 RF용 두꺼운 산화막 에어 브리지 및 공면 전송선의 제조)

  • Kim, Kook-Jin;Park, Jeong-Yong;Lee, Dong-In;Lee, Bong-Hee;Bae, Yong-Hok;Lee, Jong-Hyun;Park, Se-Il
    • Journal of Sensor Science and Technology
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    • v.11 no.3
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    • pp.163-170
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    • 2002
  • This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

Silicon-Wafer Direct Bonding for Single-Crystal Silicon-on-Insulator Transducers and Circuits (단결정 SOI트랜스듀서 및 회로를 위한 Si직접접합)

  • Chung, Gwiy-Sang;Nakamura, Tetsuro
    • Journal of Sensor Science and Technology
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    • v.1 no.2
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    • pp.131-145
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    • 1992
  • This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial $SiO_{2}$ films as the dielectrical isolation layer of piezoresistors were less than -0.2% and +0.15%, respectively, in the temperature range from $-20^{\circ}C$ to $+350^{\circ}C$. In the case of pressure transducers using interfacial $SiO_{2}$ films as an etch-stop layer during the fabrication of thin Si membranes, the pressure sensitivity variation can be controlled to within a standard deviation of ${\pm}2.3%$ from wafer to wafer. From these results, the developed SDB process and the resultant SOI films will offer significant advantages in the fabrication of integrated microtransducers and circuits.

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Uncertainties of SO2 Vertical Column Density Retrieval from Ground-based Hyper-spectral UV Sensor Based on Direct Sun Measurement Geometry (지상관측 기반 태양 직달광 관측장비의 초분광 자외센서로부터 이산화황 연직칼럼농도의 불확실성 분석 연구)

  • Kang, Hyeongwoo;Park, Junsung;Yang, Jiwon;Choi, Wonei;Kim, Daewon;Lee, Hanlim
    • Korean Journal of Remote Sensing
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    • v.35 no.2
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    • pp.289-298
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    • 2019
  • In this present study, the effects of Signal to Noise Ratio (SNR), Full Width Half Maximum (FWHM), Aerosol Optical Depth (AOD), $O_3$ Vertical Column Density ($O_3$ VCD), and Solar Zenith Angle (SZA) on the accuracy of sulfur dioxide Vertical Column Density ($SO_2$ VCD) retrieval have been quantified using the Differential Optical Absorption Spectroscopy (DOAS) method with the ground-based direct-sun synthetic radiances. The synthetic radiances produced based on the Beer-Lambert-Bouguer law without consideration of the diffuse effect. In the SNR condition of 650 (1300) with FWHM = 0.6 nm, AOD = 0.2, $O_3$ VCD = 300 DU, and $SZA=30^{\circ}$, the Absolute Percentage Difference (APD) between the true $SO_2$ VCD values and those retrieved ranges from 80% (28%) to 16% (5%) for the $SO_2$ VCD of $8.1{\times}10^{15}$ and $2.7{\times}10^{16}molecules\;cm^{-2}$, respectively. For an FWHM of 0.2 nm (1.0 nm) with the $SO_2$ VCD values equal to or greater than $2.7{\times}10^{16}molecules\;cm^{-2}$, the APD ranges from 6.4% (29%) to 6.2% (10%). Additionally, when FWHM, SZA, AOD, and $O_3$ VCD values increase, APDs tend to be large. On the other hand, SNR values increase, APDs are found to decrease. Eventually, it is revealed that the effects of FWHM and SZA on $SO_2$ VCD retrieval accuracy are larger than those of $O_3$ VCD and AOD. The SZA effects on the reduction of $SO_2$ VCD retrieval accuracy is found to be dominant over the that of FWHM for the condition of $SO_2$ VCD larger than $2.7{\times}10^{16}molecules\;cm^{-2}$.