• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.442-442
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• 2008

Hydrogen was produced by water plasma excited in very high frequency inductively coupled tube reactor. Mass spectrometry was used to monitor gas phase species at various process conditions. Water dissociation rate depend on the process parameters such as ICP power, flow-rate and pressure. Water dissociation percent in ICP reactor decrease with increase of chamber pressure and $H_2O$ flow rate, while increase with increase of ICP power. In our experimental range, maximum water dissociation rate was 65.5% at the process conditions of 265 mTorr, 68 sccm, and 400 Watt. The effect of $CH_4$ addition to a water plasma on the hydrogen production has been studied in a VHF ICP reactor. With the addition of $CH_4$ gas, $H_2$ production increases to 12% until the $CH_4$ flow rate increases up to 15 sccm. But, with the flow rate of $CH_4$ more than 20 sccm, chamber wall was deposited with carbon film because of deficiency of oxygen in gas phase, hydrogen production rate decreased. The main roles of $CH_4$ gas are to reacts with O forming CO, CHO and $CO_2$ and releasing additional $H_2$ and furthermore to prevent reverse reaction for forming $H_2O$ from $H_2$ and $O_2$. But, $CH_4$ addition has negative effects such as cost increase and $CO_x$ emission, therefore process optimization is required.

• 한국결정성장학회지
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• 제6권3호
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• pp.309-317
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• 1996

Al2O3 thin films were deposited on Si-wafer (100) using organo-aluminum compounds at low pressure by chemical vapor deposition (CVD) method. The vapor of the organo-metallic precursor was carried by pure N2 gas. The deposition rate increased and then saturated as Tsub increased with increasing the AIP flow rate. The main contamination didn't found in deposited films except carbon. The H-O(H2O) IR absorption band decreased in intensity as the deposition temperature increased, and completely disappeared through annealing.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2000년도 춘계총회 및 학술발표회
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• pp.32-32
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• 2000

• 한국자동차공학회논문집
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• 제19권3호
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• pp.52-56
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• 2011

Active regeneration in CDPF requires $O_2$ which regenerates soot at high temperature. However, small amount of NO can interrupt $O_2$ regeneration in CDPF. To verify this phenomena, soot oxidation experiments using a flow reactor with a $Pr/CeO_2$ catalyst are carried out to simulate Catalyzed Diesel Particulate Filter (CDPF) phenomena. Catalytic soot oxidation with and without small amount of NO is conducted under tight contact condition. As the heating rate rises, the temperature gap of maximum reaction rate is increased between with and without 50ppm NO. To accelerate the $NO_2$ de-coupling effect, CTO process is performed to eliminate interfacial contact for that time. As CTO process is extended, temperature which indicates peak reaction rate increases. From this result, it is found that small amount of NO can affect tight contact soot oxidation by removal of interfacial contact between soot and catalyst.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2007년도 제29회 추계학술대회논문집
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• pp.389-392
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• 2007

별도의 가압장치가 없이 산화제탱크 내에 저장된 $N_2O$액체산화제가 공급될 때 액체에서 기체로의 상변화를 고려하여 $N_2O$액체 산화제의 유량공급특성을 예측하였다. 보다 정확한 산화제 공급특성을 계산하기 위해 산화제의 압력과 온도에 따른 $N_2O$의 물성치 변화를 고려하였으며 오리피스 형상과 토출계수 관계식을 이용하여 산화제 유량을 계산하였다. 그리고 산화제 공급에 따른 산화제탱크 내의 압력변화를 측정하고 해석결과와 비교하였다.

• 방사성폐기물학회지
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• 제18권2호
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• pp.169-177
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• 2020

Here, the stability of stainless steel 316 (SS-316) was investigated to identify its applicability in the oxide reduction process, as a component in related equipment, to produce a complicated gas mixture composed of O₂ and Cl₂ under an argon (Ar) atmosphere. The effects of the mixed gas composition were investigated at flow rates of 30 mL/min O₂, 20 mL/min O₂ + 10 mL/min Cl₂, 10 mL/min O₂ + 20 mL/min Cl₂, and 30 mL/min Cl₂, each at 600℃, during a constant argon flow rate of 170 mL/min. It was found that the corrosion of SS-316 by the chlorine gas was suppressed by the presence of oxygen, while the reaction proceeded linearly with the reaction time regardless of gas composition. Surface observation results revealed an uneven surface with circular pits in the samples that were fed mixed gases. Thermodynamic calculations proposed the combination of Fe and Ni chlorination reactions as an explanation for this pit formation phenomenon. An exponential increase in the corrosion rate was observed with an increase in the reaction temperature in a range of 300 ~ 600℃ under a flow of 30 mL/min Cl₂ + 170 mL/min Ar.

• Journal of Magnetics
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• 제15권3호
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• pp.132-137
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• 2010

Plasma etching of $SiO_2$ contact holes was statistically analyzed by a fractional factorial experimental design. The analysis revealed the dependence of the etch rate and DC self-bias voltage on the input factors of the magnetically enhanced reactive ion etching reactor, including gas pressure, magnetic field, and the gas flow rates of $CHF_3$, $CF_4$, and Ar. Empirical models of the DC self-bias voltage and etch rate were obtained. The DC self-bias voltage was found to be determined mainly by the operating pressure and the magnetic field, and the etch rate was related mainly to the pressure and the flow rates of Ar and $CHF_3$.

• Journal of Welding and Joining
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• 제15권1호
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• pp.116-124
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• 1997

A scope of this study is to establish the optimum plasma spray conditions for fine ($5\mu\textrm{m}$) $Al_2O_3$ powder. However, the flowability of the $Al_2O_3$ powder is not so good because of irregular particle shape and fine particle size. Therefore, powder feeding system was modified by 1) change of powder feeding line material from polymer to copper 2) shorten the powder feeding tube length 3) heating the powder feeding system to $80^{\circ}C$4) vibrating the powder feeding line continuously, in order to feed the fine powder homogeneously. The homogeneous powder feeding conditions were obtained with the modified powder feeding system by controlling the powder carrier gas flow and the powder flow rate indicator. The best plasma spraying conditions for the fine $Al_2O_3$ powder were found out as 40kw gun power, 80 g/min. powder feed rate and 50 mm working distance after characterizing the microstructure, hardness and wear loss of the $Al_2O_3$ coating layer.

• 한국세라믹학회지
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• 제31권12호
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• pp.1423-1428
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• 1994

TiO2 doped sapphire single crystals were grown by Verneuil method. The doping amount of TiO2 to Al2O3 were varied 0.1, 0.2, 0.3 wt% respectively. The grown crystals have reddish color and somewhat transparent. Optimum growth condition was established by changing growth rate and gas flow ratio. Growth condition are as follows; The flow rate range of oxygen ws 5.0~7.3 ι/min and that of hydrogen was 16~25ι/min and average growth rate was 6~8mm/hr. The basic cause of color appearence and defects in crystal were studied.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.362-367
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• 2008

We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.