References
- B. Wu, J. Vac. Sci. Technol. B 24, 1 (2006). https://doi.org/10.1116/1.2162580
- B. Jinnai, T. Orita, M. Konishi et al. J. Vac. Sci. Technol. B 25, 1808 (2007). https://doi.org/10.1116/1.2794050
- M. A. Lieberman, A. J. Lichtenberg, and S. E. Savas, IEEE Trans. Plasma Sci. 19, 189 (1991). https://doi.org/10.1109/27.106813
- J. C. Park and B. K. Kang, IEEE Trans. Plasma Sci. 25, 499 (1997). https://doi.org/10.1109/27.597265
- S. J. You, S. K. Ahn, and H. Y. Chang, Surf. Coat. Tech. 193, 81 (2005). https://doi.org/10.1016/j.surfcoat.2004.07.054
- S. H. Lee, S. J. You, H. Y. Chang, and J. K. Lee, J. Vac. Sci. Technol. A 25, 455 (2007). https://doi.org/10.1116/1.2713408
- G. S. May, J. Huang, and C. J. Spanos, IEEE Trans. Semicond. Manuf. 4, 83 (1991). https://doi.org/10.1109/66.79720
- M. J. Buie, J. T. Pender, and P. L. G. Ventzek, Jpn. J. Appl. Phys. Part 1 36, 4838 (1997). https://doi.org/10.1143/JJAP.36.4838
- P. E. Riley, V. D. Kulkarni, and S. H. Bishop, J. Vac. Sci. Technol. B 7, 24 (1989). https://doi.org/10.1116/1.584441
- A. Camacho and D. V. Morgan, J. Vac. Sci. Technol. B 12, 2933 (1994). https://doi.org/10.1116/1.587539
- B. Kim and K. H. Kwon, J. Appl. Phys. 93, 76 (2003). https://doi.org/10.1063/1.1527216
- W. Guo and H. H. Sawin, J. Phys. D-Appl. Phys. 42, 194014 (2009). https://doi.org/10.1088/0022-3727/42/19/194014
- G. E. P. Box, W. G. Hunter, and J. S. Hunter, Statistics for Experimenters: An Introduction to Design, Data Analysis, and Model Building, John Wiley & Sons, New York (1978).
- S. Nakagawa, T. Sasaki, H. Mori, and T. Namura, Jpn. J. Appl. Phys. Part 1 33, 2194 (1994). https://doi.org/10.1143/JJAP.33.2194
- H. C. Shin, K. Noguchi, X. Y. Qian, N. Jha, G. Hills, and C. Hu, IEEE Electron Device Lett. 14, 88 (1993). https://doi.org/10.1109/55.215117
- Y. Li, A. Iizuka, and N. Sato, Phys. Rev. B 132, 585 (1997).
- M. J. Buie, J. T. P. Pender, and M. Dahimene. J. Vac. Sci. Technol. A 16, 1464. (1998). https://doi.org/10.1116/1.581170
- R. Lindley, C. Bjorkman, H. Shan et al. Solid State Technol. 40, 93 (1997). https://doi.org/10.1016/0038-1101(95)00220-0
- S. J. You, C. W. Chung, K. H. Bai, and H. Y. Chang, Appl. Phys. Lett. 81, 2529 (2002). https://doi.org/10.1063/1.1506944
- M. A. Lieberman and A. Lichtenberg. Principles of Plasma Discharges and Materials Processing, John Wiley & Sons, New York (1994).
- G. Y. Yeom and M. Kushner, Appl. Phys. Lett. 56, 857 (1990). https://doi.org/10.1063/1.103322
- A. Furuya and S. Hirono, J. Appl. Phys. 68, 304 (1990). https://doi.org/10.1063/1.347133
- A. Furuya and S. Hirono, J. Appl. Phys. 87, 939 (2000). https://doi.org/10.1063/1.371963
- A. J. Van Roosmalen, W. G. M. Van den Hoek, and H. Kalter, J. Appl. Phys. 58, 653 (1985). https://doi.org/10.1063/1.336177
- A. Seabaugh. J. Vac. Sci. Technol. B 6, 77 (1988). https://doi.org/10.1116/1.584056
- M. V. Bazylenko and M. Gross, J. Vac. Sci. Technol. A 14, 2994 (1996). https://doi.org/10.1116/1.580258
- D. L. Flamm, in Plasma Etching, An Introduction, edited by D. M. Manos and D. L. Flamm, Academic Press, Boston (1989).