• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.71-72
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• 2007

In this study, we investigated the fabrication of MLR (multi-layer resist) with a very thin diamond-like carbon (DLC) layer. ArF PR/$SiO_2$/DLC MLR structure was investigated and etching characteristics of the DLC layer was patterned using $SiO_2$ hard-mask by varying the process parameters such as different high-frequency/low-frequency combination ($f_{LF}/f_{HF}$), HF/LF power ratio ($P_{HF}/P_{LF}$), $O_2$ flow and $N_2$ flow rate in $O_2/N_2$/Ar plasmas. The results indicated an increased etch rate of DLC for the higher $f_{LF}/f_{HF}$ combination and for the increased low-frequency power ($P_{LF}$). And the etch rate of DLC was decreased with increasing the $N_2$ flow rate in $O_2/N_2$/Ar plasmas. In order to confirm the application of DLC MLR for the etching process of silicon oxide, the stack of ArF PR/BARC/$SiO_2$/DLC/TEOS/Si was investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.398-398
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• 2013

The electronic properties and the local structure of tantalum oxide thin film with variation of oxygen flow rate ranging from 9.5 to 16 sccm (standard cubic centimeters per minute) have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results show that the Ta4f spectrum for all films consist of the strong spin-orbit doublet $Ta4f_{7/2}$ and $Ta4f_{5/2}$ with splitting of 1.9 eV. The oxygen flow rate of the film results in the appearance of new features in the Ta4f at binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV, these peaks attribute to $Ta^{1+}$, $Ta^{2+}$, $Ta^{4+}$/$Ta^{2+}$, and $Ta^{5+}$, respectively. Thus, the presence of non-stoichiometric state from tantalum oxide ($TaO_x$) thin films could be generated by the oxygen vacancies. The REELS spectra suggest the decrease of band gap for tantalum oxide thin films with increasing the oxygen flow rate. The absorption coefficient ${\mu}$ and its fine structure were extracted from the fluorescence mode of extended X-ray absorption fine structure (EXAFS) spectra. In addition, bond distances (r), coordination numbers (N) and Debye-Waller factors (${\sigma}^2$) each film were determined by a detailed of EXAFS data analysis. EXAFS spectrapresent both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the increase of oxygen flow rate.

• Journal of computational fluids engineering
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• v.5 no.1
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• pp.33-42
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• 2000

The LiBr-H₂O absorption process on a horizontal tube has been analyzed numerically. The flow field, which was calculated in the authors' previous study by solving the fully elliptic Navier-Stokes equations with accurate free-surface-tracking method, is used to solve the temperature and concentration distributions in the absorption film. With the assumption that the absorbent is linear, calculations have been made for various inlet temperature and flow-rate conditions. For low inlet temperature, the absorption rate is large in the upstream region but the mean temperature also increases and as a result the absorption decreases as the film flows to downstream while high-inlet-temperature case does the opposite. The difference in the absorption rate due to the inlet temperature change becomes smaller in the downstream than that in the upstream. For large flow rate, the heat transfer to the wall becomes poor due to the thick film and so does the absorption rate. The analyses have also been carried out for multiple tube arrangement and the results show that the absorption rate converges after a few tube rows.

• Progress in Superconductivity
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• v.3 no.1
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• pp.125-129
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• 2001

NiO buffer layers were deposited on texture Ni tapes fur YBCO coated conductors by MOCVD(metal organic chemical vapor deposition) method, using a single solution source. Variables were deposition temperature and flow rate of $0_2$carrier gas. At higher temperatures, The NiO(111) texture was well developed, but the NiO(200) texture was developed at low temperatures. The best result was obtained at the deposition temperature of$ 470^{\circ}C$ and the gas flow rate of 200 sccm. FWHM value of $\omega$-scan fur NiO(200) of the film and $\Phi$-scan for NiO(111) of the film was $4.2^{\circ}$ and $7^{\circ}$, respectively.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.2
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• pp.272-280
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• 1999

A cycle analysis was achieved to predict the characteristics by comprehensive modeling and simulation of an air-cooled, double-effect absorption system using a new $H_2O/LiBr+HO(CH_2)_3OH$ solution. The simulation results showed that the new working fluid may provide the crystallization limit 8% higher than the conventional $H_2O/LiBr$ solution. With a crystallization margin of 3wt%(weight%), the optimal solution distribution ratio was found in the range of 36 to 40%. Variation of cooling air Inlet temperature has a sensitive effect on the cooling COP and corrosion problem. The simulation of heat exchangers with UA value revealed that the absorber and the evaporator are relatively important for an air-cooled system compared with the condenser and the low temperature generator. The effect of cooling air flow rate, circulation weak solution flow rate and chilled water inlet temperature were also examined. The new working fluid may provide the COP approximately 5% higher than the conventional $H_2O/LiBr$ solution.

• Journal of the Korean Ceramic Society
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• v.45 no.1
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• pp.43-47
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• 2008

The photocatalyst of $TiO_2$ coated on a fly ash composites (TCF) was prepared from precipitant dropping method to remove the acetaldehyde by photocatalytic reaction. The TCF were characterized by crystal aize, crystal structure and specific surface area. The photodegradation of acetaldehyde has been investigated using a UV-illuminated fixed photocatalytic reactor with TCF catalyst and P-25 catalyst in gas phase. The effect of photodegradation reaction conditions, such as initial concentration of acetaldehyde, concentration of oxidant in mixed gas and the light intensity on the photodegradation of acetaldehyde were investigated. P-25 catalyst showed the highest photodegradation of acetaldehyde and anatase $TiO_2$ coated TCF showed higher decomposition rate than rutile coated TCF. The photodegradation rate of acetaldehyde increased with the decrease of flow rate, initial concentration of acetaldehyde ($C_i$) and water vapor, however, it was increased with the increas of UV light intensity. The optimum conditions were weight of TCF=10 g, flow rate=50 ml/min $C_i$=100 ppm, concentration of oxygen=20%, concentration of water vapor=100 ppm.

• Journal of Environmental Health Sciences
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• v.23 no.4
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• pp.127-132
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• 1997

The characteristics of the ozone treatments of phenol were studied in a laboratory scale wastewater treatment system. The ozone treatment of wastewater was carried out in a batch-type reactor. The initial pH of wastewater(7-10), volumetric flow rate(1-2l/min) and ozone concentration(20~30 mg/l) of aerating gas were considereal as experimental variables in the ozone treatment. Phenol was decomposed easily by the ozone in a batch treatment, where the rate determining step was the COD removal that is decomposition of intermediates formed by the ozonation of phenol. Phenol decomposition and COD removal could be expressed by the first order reaction for the phenol concentration and COD, respectively. Rate constants of phenol decomposition and COD removal increased with the initial pH, volumetric flow rate and ozone concentration of aeration gas. Under the present experimental condition, their relationships could be given by for the phenol decomposition $k'=4.46\times 10^{-9}[pH]_o ^{3.94}[O_3]^{1.42}Q_{O3}^{1.57}$ for the COD removal $k=2.46\times 10^{-10}[pH]_o ^{5.19}[O_3]^{1.15}Q_{O3}^{1.19}$

• ETRI Journal
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• v.35 no.6
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• pp.1156-1159
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• 2013

We investigate the characteristics of $Cu_2O$ thin films deposited through the addition of $N_2$ gas. The addition of $N_2$ gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase ($6CuO{\cdot}Cu_2O$) appears at a $N_2$ flow rate of 1 sccm, and a $Cu_2O$ (200) phase is then preferentially grown at a higher feeding amount of $N_2$. The optical and electrical properties of $Cu_2O$ thin films are improved with a sufficient $N_2$ flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of $1.5{\times}10^{-2}$ S/cm are obtained. These high-quality $Cu_2O$ thin films are expected to be applied to $Cu_2O$-based heterojunction solar cells and optical functional films.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.9
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• pp.1151-1162
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• 1999

The effects of radial heat and $H_2O$ diffusion on the evolution of silica particles in coflow diffusion flames have been studied experimentally. The evolution of silica aggregate particles in coflow diffusion flames has been measured experimentally using light scattering and thermophoretic sampling techniques. The measurements of scattering cross section from $90^{\circ}$ light scattering have been utilized to calculate the aggregate number density and volume fraction using with combination of measuring the particle size and morphology through the localized sampling and a TEM image analysis. Aggregate or particle number densities and volume fractions were calculated using Rayleigh-Debye-Gans and Mie theory for fractal aggregates and spherical particles, respectively. Flame temperatures and volumetric differential scattering cross sections have been measured for different flame conditions such as inert gas species, $H_2$ flow rates, and burner injection configurations to examine the relation between the formation of particles and radial $H_2O$ diffusion. The comparisons of oxidation and flame hydrolysis have also been made for various $H_2$ flow rates using $N_2$ or $O_2$ as a carrier gas. Results indicate that the role of oxidation becomes dominant as both carrier gas($O_2$) and $H_2$ flow rates increases since the radial heat diffusion precedes $H_2O$ diffusion in coflow flames used in this study. The effect of carrier gas flow rates on the evolution of silica particles have also been studied. When using $N_2$ as a carrier gas, the particle volume fraction has a maximum at a certain carrier gas flow rate and as the flow rate is further increased, the hydrolysis reaction Is delayed and the spherical particles finally evolves into fractal aggregates due to decreased flame temperature and residence time.

• Korean Journal of Materials Research
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• v.28 no.12
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• pp.709-713
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• 2018

To improve the etch rate of $Si_3N_4$ thin film, $H_2SiF_6$ is added to increase etching rate by more than two times. $SiO_3H_2$ is gradually added to obtain a selectivity of 170: 1 at 600 ppm. Moreover, when $SiO_3H_2$ is added, the etching rate of the $SiO_2$ thin film increases in proportion to the radius of the wafer. In $Si_3N_4$ thin film, there is no difference in the etching rate according to the position. However, in the $SiO_2$ thin film, the etching rate increases in proportion to the radius. At the center of the wafer, the re-growth phenomenon is confirmed at a specific concentration or above. The difference in etch rates of $SiO_2$ thin films and the reason for regrowth at these positions are interpreted as the result of the flow rate of the chemical solution replaced with fresh solution.