• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.26-31
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• 2023

We investigated the impact of NF₃ / H₂O remote plasma dry cleaning conditions on the SiO₂ etching rate at different preparation states during the fabrication of ultra-large-scale integration (ULSI) devices. This included consideration of factors like Si crystal orientation prior to oxidation and three-dimensional structures. The dry cleaning process were carried out varying the parameters of pressure, NF₃ flow rate, and H₂O flow rate. We found that the pressure had an effective role in controlling anisotropic etching when a thin SiO₂ layer was situated between Si₃N₄ and Si layers in a multilayer trench structure. Based on these observations, we would like to provide further guidelines for implementing the dry cleaning process in the fabrication of semiconductor devices having 3D structures.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.327-335
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• 2002

Experiments were conducted to investigate the synthesis characteristics of Precipitated Calcium Carbonate(for short PCC) in Ca(OH)$_2-CO_2-H_2O$ system by the continuous drop method of Ca(OH)$_2$ slurry into the solution containing $CO_2$(aq). When the flow rate of $CO_2$(g) increases and the concentration of Ca(OH)$_2$ slurry become low, the absorption rate of $CO_2$(g) become faster than the dissolution rate of Ca(OH)$_2$. Consequently, the growth of the calcite crystal plane is facilitated resulting in synthesis of $1.0{\mu}m$ of rhombohedral calcite. On the other hand, when the flow rate of $CO_2$(g) decreases and the concentration of Ca(OH)$_2-CO_2-H_2O$ slurry become high, new nuclei is created along with the crystal growth resulting in synthesis of $0.1{\mu}m$ of prismatic calcite. Maintaining 1.0wt% of Ca(OH)$_2-CO_2-H_2O$ slurry, 120 drops/min of drop rate and $25^{circ}C$ of temperature, the shape of PCC shows colloidal and spherical agglomerate at 100 mL/min of the flow rate of $CO_2$(g); the mixture of rhombohedral and plate-shaped calcite, at 200∼500 mL/min. Therefore, as the flow rate of $CO_2$(g) increases, the shape of PCC changes from colloidal and rhombohedral calcite to plate-shaped calcite. Maintaining 500 mL/min of the flow rate of $CO_2$(g), 120 drops/min of the drop rate of Ca(OH)$_2$ slurry, and $25^{circ}C$ of temperature, the shape of PCC shows the plate-shaped calcite at 1.0∼3.0 wt% of Ca(OH)$_2$ slurry; the hexagonal plate-shape calcite of the thickness of $0.1{\mu}m$ and the width of $1.0{\mu}m$, at 4.0 wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.117-121
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• 1992

Zinc oxide thin films were obtained from zinc acetate-2-water and oxygen by photo-CVD method. (1) The formation of ZnO films sarts from 100[$^{\circ}C$] and the deposition rate increases with increasing substrate temperature. (2) The rate of deposition was also affected by flow rates of O$_2$(reaction gas) and N$_2$(Carrier gas). (3) The deposition rate decreases with increasing O$_2$mole rate. (4) The transmission of the films was independent of oxygen mole rate and it was largely affected substrate temperature. (5) The electric resistivity of th films was largely varied at oxygen mole rate 10[%] and above 20[%], a plateau was encountered. Also, it increases with increasing substrate temperature. As the results, at substrate temperature: 200[$^{\circ}C$]; O$_2$gas mole rate:10[%]; reation time:10[min] pressure: 10$\^$-2/[atm], deposition rate; transmittance; resistivity were 780[A$\^$0/; 94[%]; 7${\times}$10$\^$-2/[$\Omega$$.$cm] respectively.

• Journal of Korean Society of Water and Wastewater
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• v.19 no.3
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• pp.348-356
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• 2005

Water quality sampling surveys and continuous measurement of flow were conducted to identify wastewater flow characteristics for representative catchment of O and M treatment basins in A city. For HS-1 station representing commercial area, wastewater flow rises in the beginning of office-working hours, moves up and down within narrow range, and lasts till office-leaving hour, and falls gradually reflecting worker's returning home. However, in HS-2 station representing residential area, wastewater flow has two peaks, which are before office-going hour and after office-leaving hour. In residential area, the flow rate of weekends is higher than that of weekdays because it reflects population, being not contributed to generate wastewater during the working hours of weekdays, stay home and produce wastewater for weekends period. To determine the priority for rehabilitation of sewer system, infiltration rate was computed by dividing infiltration flow by mean diameter and total length of sewer, and HS-1 station ranked the first.

• Journal of Korean Society for Atmospheric Environment
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• v.19 no.E3
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• pp.121-127
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• 2003

The characteristics of heterogeneous photocatalytic decomposition were investigated at low concentration level of $O_3$on TiO$_2$for various operating parameters such as: loaded catalyst weight (0∼4 mg/$\textrm{cm}^2$), initial concentration of $O_3$(0.06∼10.0 ppm), gas flow rate (1.0 ∼ 2.5ι/min), and relative humidity (0∼80%). This study was conducted using a flow-type reactor at room temperature. Three kinds of pure TiO$_2$(P25, ST -01, and E- 23) were employed as photocatalyts. It was found that $O_3$removal ratio was identical, regardless of the loaded TiO$_2$weight in the range from 0.5 to 4.0 mg/$\textrm{cm}^2$. It was also found that higher initial ozone concentration results in greater oxidation rate of ozone and experimental data show kinetically a good agreement with Langmur-Hinshelwood kinetic model. We also observed that the removal ratio of $O_3$increases linearly with the increasing flow rate and also with the increasing relative humidity for each catalyst.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.589-593
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• 2003

Silica based Planar Lightwave Circuits (PLC) have been applied to various kinds of wave-guided optical passive devices. SiO$_2$ (buffer) and GeO$_2$-SiO$_2$ (core) thick films have been deposited by Flame Hydrolysis Deposition (FHD). The SiO$_2$ films were produced by the flame hydrolysis reaction of halide materials such as SiCl$_4$, POCl$_3$ and BCl$_3$ into an oxy-hydrogen torch. The P concentration increased from 2.0 to 2.8 at％ on increasing the POCl$_3$/BCl$_3$ flow ratio. The refractive index increased from 1.4584 to 1.4605 on increasing the POC1$_3$/BC1$_3$ flow ratio from 0.6 to 2.6. The refractive index of GeO$_2$-SiO$_2$ films was controlled by the GeCl$_4$ flow rate. The refractive index increased from 1.4615 to 1.4809 on increasing the GeCl$_4$ flow rate from 30 to 120 sccm.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3319-3321
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• 1999

Pt-RTD and Micro Heater was fabricated by using MgO as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures, In the analysis of properties of Pt-RTD, TCR value had 3927 $ppm/^{\circ}C$ and liner in the temperature range of $25-400^{\circ}C$. The temperature of Pt micro-heater had up to $400^{\circ}C$ with 1.5watts of the heating power. In investigating output characteristics of flow sensors output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000sccm, heating power of 1.2W.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.527-532
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• 2001

Dry etching of copper film using $O_2$ plasma and H(hfac) has been investigated. A one-step process consisting of copper film oxidation with an $O_2$ plasma and the removal of surface copper oxide by the reaction with H(hfac) to form volatile Cu(hfac)$_2$ and $H_2O$ was carried but. The etching rate of Cu in the range from 50 to 700 /min was obtained depending on the substrate temperature, the H(hfac)/O$_2$ flow rate ratio, and the plasma power. The copper film etch rate increased with increasing RF power at the temperatures higher than 215$^{\circ}C$. The optimum H(hfac)/O$_2$ flow rate ratio was 1:1, suggesting that the oxidation process and the reaction with H(hfac) should be in balance. Cu patterning using a Ti mask was performed at a flow rate ratio of 1:1 on 25$0^{\circ}C$\ulcorner and an isotropic etching profile with a taper slope of 30$^{\circ}$was obtained. Cu dry patterning with a tapered angle which is necessary for the advanced high resolution large area thin film transistor liquid-crystal displays was thus successfully obtained from one step process by manipulating the substrate temperature, RF power, and flow rate ratio.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.87-91
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• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.66-69
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• 1989

After reviewing previous work done on two piezoelectric thin films(PZT, ZnO), ZnO thin piezofim of 1-3UM is fabricated by sputtering on the different substrates(i. e., P+Si/N-Si, SiO2/P+Si/ N-Si, Al/SiO2/ P+Si/ N+Si). The result shows that ZnO piezofilm on the Al has the best c-axis orientation. One of applications for the ZnO piezofilm as an microvalve to control liquid flow is introduced, and which can be controlled electrically and remotely.