• Korean Chemical Engineering Research
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• 제48권4호
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• pp.540-543
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• 2010

가스 중에 포함되어 있는 질소산화물을 안전하게 처리하기 위하여 저온 플라즈마 반응기를 제작하여 반응기내에 공급되는 반응물질의 유량과 방전주입전력량에 대한 장치의 특성을 실험적으로 조사하고, 유효성을 검정하였다. 반응가스는 $NO/N_2$ 혼합가스와 $N_2/O_2$ 혼합가스를 이용하여 초기 NO 농도를 설정하고, 유속을 1~4 l/min으로 공급하였다. 반응물질의 유량이 증가할 때 NO의 감소율이 낮고, 방전주입전력이 높을 때 NO의 분해가 용이하였다. 또한 반응물질의 지연시간이 길고 방전주입전력이 높을수록 NO의 분해에너지 효율이 높았으며, 유량이 많고 방전 주입 전력량이 증가할수록 오존의 생성량이 증가하였다.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.883-890
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• 2005

In this paper, the established model of NBTI (Negative Bias Temperature Instability) mechanism was reviewed. Based on this mechanism, then, the influence of nitrogen was discussed among other processes. A constant concentration of nitrogen exists inside $SiO_2$ in order to prevent boron from diffusing and to increase dielectric constant. It was shown that NBTI improvement was achieved by controlling nitrogen profile. It was supposed that the existence of low activation energy of Si-N bonds at $Si-SiO_2$ interface attributes the improvement by making hydrogen prevent interface traps. It was also shown that improvement of NBTI can be achieved by more effective control of nitrogen profile. It was supposed that the maximum control of nitrogen profile can be achieved by DPN (Decoupled Plasma Nitridation) process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.406-409
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• 1999

Experimental Investigations were carried out to remove NOx, SOx simultaneously from simulated flue gas[NO(0.02%)-SO$_2$(0.08%)-$CO_2$-Air-$N_2$] by using a plasma chemical reaction. Ammonia gas(14.81%) balanced by argon was diluted by all and was Introduced to mall simulated flue gas duct through NH$_3$ Injection system which is in downstream of reactor. The NH$_3$ molecular ratio(MR) was determined based on (NH3) to [NO+S0$_2$]. MR is 1, 1.5, 2.5. The NOx removal rate significantly increased with increasing NaOH bubble quantity. The SO$_2$ removal rate was not significantly effected by applied voltage, however it fairly Increased with increasing NH$_3$ molecule ratio. By-product aerosol particle was observed by XRD(X-ray diffraction) after sampling, The NOx, SOx removal rates, when H2O vapour bubbled by dry all was injected to plasma reactor, were better than those of other cases. When aqueous NaOH solution(20%) bubbled by 2.5( ι /min) of $N_2$ and 0.5 ( ι /min) NH$_3$(MR=1.5) were injected to simulated flue gas, The NOx. SOx removal rate was 95 ~ 100[%]

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제27회 학술발표회 초록집
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• pp.226-226
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• 2004

• 한국진공학회지
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• 제19권1호
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• pp.58-65
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• 2010

먼저 RF 마그네트론 스퍼터링법을 이용하여 사파이어 기판 위에 AlN 박막을 증착하였다. AlN 공급원으로는 분말소결된 AlN 타겟을 적용하였다. 플라즈마 파워를 50에서 110 W로 증가시켰을 때 AlN 층의 두께는 선형적으로 증가하였다. 그러나 동작압력을 3에서 10 mTorr로 증가시켰을 때는 동작기체인 아르곤 양이 증가함에 따라 AlN 타겟으로부터 스퍼터링되어 나온 AlN 입자들의 평균자유행정의 거리가 감소하기 때문에 AlN 층의 두께는 약간 감소하였다. 질소 기체를 아르곤과 섞어주었을 때는 질소의 낮은 스퍼터링 효율에 의해서 AlN의 두께는 크게 감소하였다. 다음으로는 ZnO 형판 위에 AlN를 증착하였다. 그러나 700도 이상의 열처리에 의해서 AlN와 ZnO의 계면이 약간 분리되어 계면의 열적 안정성이 낮다는 결과를 얻었다. 게다가 스퍼터링으로 증착한 AlN 박막의 나쁜 결정성으로 인하여 700도에서 MOCVD의 반응기 기체인 수소와 암모니아에 의해서 AlN 밑의 ZnO 층이 분해되는 현상도 관찰하였다. 그리고 900도 이상에서는 ZnO가 완전히 분해되어 AlN 박막이 완전히 분리되었다.

• 한국환경과학회지
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• 제27권8호
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• pp.621-629
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• 2018

Many chemically active species such as ${\cdot}H$, ${\cdot}OH$, $O_3$, $H_2O_2$, hydrated $e^-$, as well as ultraviolet rays, are produced by Dielectric Barrier Discharge (DBD) plasma in water and are widely use to remove non-biodegradable materials and deactivate microorganisms. As the plasma gas containing chemically active species that is generated from the plasma reaction has a short lifetime and low solubility in water, increasing the dissolution rate of this gas is an important challenge. To this end, the plasma gas and water within reactor were mixed using the air-automizing nozzle, and then, water-gas mixture was injected into water. The dissolving effect of plasma gas was indirectly confirmed by measuring the RNO (N-Dimethyl-4-nitrosoaniline, indicator of the formation of OH radical) solution. The plasma system consisted of an oxygen generator, a high-voltage power supply, a plasma generator and a liquid-gas mixing reactor. Experiments were conducted to examine the effects of location of air-automizing nozzle, flow rate of plasma gas, water circulation rate, and high-voltage on RNO degradation. The experimental results showed that the RNO removal efficiency of the air-automizing nozzle is 29.8% higher than the conventional diffuser. The nozzle position from water surface was not considered to be a major factor in the design and operation of the plasma reactor. The plasma gas flow rate and water circulation rate with the highest RNO removal rate were 3.5 L/min and 1.5 L/min, respectively. The ratio of the plasma gas flow rate to the water circulation rate for obtaining an RNO removal rate of over 95% was 1.67 ~ 4.00.

• Nuclear Engineering and Technology
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• 제47권5호
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• pp.617-623
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• 2015

$ZrO_2$-based composites reinforced with 6.5 vol.% of carbon foam, carbon fiber, and graphite were fabricated using spark plasma sintering, and characterized using scanning electron microscopy and X-ray diffractometry. Their thermal properties were also investigated. The microstructures of the reinforced composites showed that carbon fiber fully reacted with $ZrO_2$, whereas carbon foam and graphite did not. The carbothermal reaction of carbon fiber had a negative effect on the thermal properties of the reinforced $ZrO_2$ composites because of the formation of zirconium oxycarbide. Meanwhile, the addition of carbon foam had a positive effect, increasing the thermal conductivity from 2.86 to $3.38Wm^{-1}K^{-1}$ at $1,100^{\circ}C$. These findings suggest that the homogenous distribution and chemical stability of reinforcement material affect the thermal properties of $ZrO_2$-based composites.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.305-308
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• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• 한국연소학회:학술대회논문집
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• 한국연소학회 2002년도 제24회 KOSCO SYMPOSIUM 논문집
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• pp.157-162
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• 2002

The characteristics of DeNOx conversion process by plasma/post-heating system with the simulated gas containing ethene is investigated experimentally. Without plasma treatment, $NO-NO_2$ conversion doesn't occur by $400^{\circ}C$ in a mixture of $N_2/O_2$ with a trace gas of ethene. But $NO-NO_2$ conversion occurs as temperature increases above $400^{\circ}C$. The NO can, however, be converted to $NO_2$ at lower temperatures by treating the gas mixture with non-thermal plasma. The $NO-NO_2$ conversion enhances further by passing the plasma treated gas through the post-heating furnace. Results show that 20%${\sim}50%$ more conversion of NO to $NO_2$ is observed when the temperatures of the post-heating furnace are maintained at $300^{\circ}C$ or $400^{\circ}C$. The additional $NO-NO_2$ conversion by post-heating is due to the reaction of ethene with the byproducts or radicals generated from the plasma reaction.

• 한국재료학회지
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• 제9권11호
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• pp.1129-1136
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• 1999

TEMAT precursor를 사용하여 다양한 증착 조건으로 ICP-CVD 방법으로 Si(100) 기판 위에 TiN 박막을 형성하였다. 형성된 TiN 박막의 결정상, 미세구조, 그리고 전기적 특성은 XRD, XPS, HRTEM, 그리고 전기적 측정으로 특성을 조사하였다. BI 구조를 갖는 다결정 TiN 박막은 기판의 온도가 $200^{\circ}C$ 이상의 온도에서 형성되었다. TiN(111) 박막은 기판의 온도가 $300^{\circ}C$에서 TEMAT, $\textrm{N}_{2}$, 그리고 Ar 가스의 유량이 10, 5, 그리고 5sccm으로 반응로에 주입할 때 형성되었다. TiN/Si(100) 계면은 TiN과 $\textrm{SiO}_2$사이에 계면반응이 없었으며 평탄하였다. 기판의 온도가 $500^{\circ}C$에서 형성된 TiN 박막의 비저항, carrier 농도와 이동도는 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$와 $462.6\textrm{cm}^{2}$/Vs으로 주어졌다.