• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.357-360
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• 2011

N-doped ZnO nanofilms were prepared by plasma enhanced atomic layer deposition method. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ and $N_{2}$ were used as Zn, O and N sources, respectively, for N-doped ZnO films under variation of radio frequency (rf) power from 50-300W. Structural, optical and electrical properties of as-grown ZnO films were investigated with Xray diffraction(XRD), photoluminescence(PL) and Hall-effect measurements, respectively. Nitrogen content and p-type conductivity in ZnO nanofilms increased with the rf power.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.551-552
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• 2006

Plasma-induced charging damage was been measured during TaN gate electrode of MISFET(TaN/$HfO_2$/Si) or interconnection metal etching step using large antenna structures. The results of these experiments were obtained that $HfO_2$ gate dielectric layer was affected about plasma charging effects and damage increased with F-N tunneling. Therefore, the etching conditions should be optimized to avoid the defects caused by plasma charging.

• Membrane Journal
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• v.4 no.4
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• pp.205-212
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• 1994

Gas permeation properties of simple gases(He, $H_2,\;CO_2,\;O_2,\;N_2,\;CH_4$) through plasma-polymerized films were investigated, and the chemical structure of the plasma polymers was analyzed by infrared spectra. The plasma-polymerized films were prepared by plasma polymerization of fluorine-containing aromatic compounds, and permeation measurements were made at $35^{\circ}C$, latm. The permeability coefficient of the plasma films decreased as the size of penetrant molecules increased. The plasma polymers showed higher $CO_2/CH_4$ selectivities than those of commonly used polymers, while $O_2/N_2$ selectivities were similar of slightly lower than those of common polymers. FT-IR spectra shows that the plasma polymers contain both aromatic and aliphatic structures.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.8-13
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• 2007

This paper aims to analyze the characteristics of ITO which are caused by variation of plasma condition to fabricate the OLED of high efficiency. We treated $N_2$ gas and $O_2$ gas plasma on the surface of the ITO by changing their RF plasma power into 100 W, 200 W, 400 W and by changing their 9as pressure into 12 mTorr, 120 mTorr. The work function of ITO that plasma treatment was done by using $N_2$ gas had value of $4.88{\sim}5.07\;eV$, and that by using $O_2$ gas, $4.85{\sim}4.97 eV$. The characteristics of the ITO were most efficient in the $N_2$ gas plasma with the RF power of 200W and gas pressure of 120 mTorr. The rms roughness of ITO surface is the value from AFM image. In this case, ITO obtained $25.2\;{\AA}$ and $30.5\;{\AA}$ in the $N_2$ and $O_2$ gas plasma respectively when it had the RF power of 200 W. But ITO that didn't have plasma treatment was $44.5{\AA}$. The variation of ITO transmittance was almost not discovered by the change of $N_2$ gas and $O_2$ gas pressure.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.98-102
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• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.68-74
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• 1998

Improved performance and suppressed short-channel effects of polysilicon thin film transistors (poly-Si TFTs) with very thin electron cyclotron resonance (ECR) $N_2$O-plasma gate oxide have been investigated. Poly-Si TFTs with ECR $N_2$O-plasma oxide ($N_2$O-TFTs) show better performance as well as suppressed short-channel effects than those with conventional thermal oxide. The fabricated $N_2$O-TFTs do not show threshold voltage reduction until the gate length is reduced to 3 ${\mu}{\textrm}{m}$ for n-channel and 1 ${\mu}{\textrm}{m}$ for p-channel, respectively. The improvements are due to the smooth interface, passivation effects, and strong Si ≡ N bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• Journal of IKEEE
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• v.11 no.4
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• pp.152-157
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• 2007

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of ${N_2}O$ plasma on the electrical characteristics of the devices was investigated. The HEMT exposed to ${N_2}O$ plasma formed by 40 W of RF power in a chamber with pressure of 20 mTorr at a temperature of $200^{\circ}C$, exhibited a reduction of gate leakage current from 246 nA to 1.2 pA by 10 seconds treatment. The current between the two isolated active regions reduced from 3 uA to 7 nA and the sheet resistance of the active layer was lowered also. The variations of electrical characteristics for HEMT were occurred within a short time expose of 10 seconds and the successive expose did not influence on the improvements of gate leakage characteristics and conductivity of the active region. The reduced leakage current level was not varied by successive $SiO_2$ deposition and its removal. The transconductnace and drain current of AlGaN/GaN HEMTs were increased also by the expose to the ${N_2}O$ plasma.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.75-81
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• 2018

The effect of $Ar-N_2$ plasma treatment on Cu surface as one of solutions to realize reliable Cu-Cu wafer bonding was investigated. Structural characteristic of $Ar-N_2$ plasma treated Cu surface were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope. Ar gas was used for a plasma ignition and to activate Cu surface by ion bombardment, and $N_2$ gas was used to protect the Cu surface from contamination such as -O or -OH by forming a passivation layer. The Cu specimen under high Ar partial pressure plasma treatment showed more copper oxide due to the activation on Cu surface, while Cu surface after high $N_2$ gas partial pressure plasma treatment showed less copper oxide due to the formation of Cu-N or Cu-O-N passivation layer. It was confirmed that nitrogen plasma can prohibit Cu-O formation on Cu surface, but nitrogen partial pressure in the $Ar-N_2$ plasma should be optimized for the formation of nitrogen passivation layer on the entire surface of Cu wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.93-94
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• 2005

본 연구에서는 저온 공정에서 제작되는 소자에의 응용을 위하여 Inductively Coupled Plasma Chemical Vapor Deposition(ICP-CVD) 내에서 $N_2O$ 기체를 활용한 plasma oxidation을 통한 silicon 표면의 oxynitridation과 이로부터 tunnel gate dielectirics로 사용될 SiON 층을 형성하였으며, 형성된 SiOxNy 층의 전기적 특성을 측정하여 tunnel gate dielectrics로서 효과적인 기능을 수행함을 확인하였다. 형성된 박막의 성분 분석을 위하여 energy dispersive spectroscopy(EDS)를 이용하여 SiOxNy 층의 생성을 확인하였으며, 전기적인 특성을 통하여 tunnel gate dielectrics의 기능을 수행함을 알 수 있었다. 형성된 SiOxNy 층은 초박막 형태임에도 절연막으로서의 기능을 나타내었다.