• 제목/요약/키워드: $N_2O$ generation

검색결과 269건 처리시간 0.029초

실리콘 다층절연막의 전기전도 특성 (The electrical conduction characteristics of the multi-dielectric silicon layer)

  • 정윤해;한원열;박영걸
    • E2M - 전기 전자와 첨단 소재
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    • 제7권2호
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    • pp.145-151
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    • 1994
  • The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

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Trapping and Detrapping of Transport Carriers in Silicon Dioxide Under Optically Assisted Electron Injection

  • Kim, Hong-Seog
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권3호
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    • pp.158-166
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    • 2001
  • Based on uniform hot carrier injection (optically assisted electron injection) across the $Si-SiO_2$ interface into the gate insulator of n-channel IGFETs, the threshold voltage shifts associated with electron injection of $1.25{\times}l0^{16}{\;}e/\textrm{cm}^2 between 0.5 and 7 MV/cm were found to decrease from positive to negative values, indicating both a decrease in trap cross section ($E_{ox}{\geq}1.5 MV/cm$) and the generation of FPC $E_{ox}{\geq}5{\;}MV/cm$). It was also found that FNC and large cross section NETs were generated for $E_{ox}{\geq}5{\;}MV/cm$. Continuous, uniform low-field (1MV/cm) electron injection up to $l0^{19}{\;}e/\textrm{cm}^2 is accompanied by a monatomic increase in threshold voltage. It was found that the data could be modeled more effectively by assuming that most of the threshold voltage shift could be ascribed to generated bulk defects which are generated and filled, or more likely, generated in a charged state. The injection method and conditions used in terms of injection fluence, injection density, and temperature, can have a dramatic impact on what is measured, and may have important implications on accelerated lifetime measurements.

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A Modified Product Code Over ℤ4 in Steganography with Large Embedding Rate

  • Zhang, Lingyu;Chen, Deyuan
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제10권7호
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    • pp.3353-3370
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    • 2016
  • The way of combination of Product Perfect Codes (PPCs) is based on the theory of short codes constructing long codes. PPCs have larger embedding rate than Hamming codes by expending embedding columns in a coding block, and they have been proven to enhance the performance of the F5 steganographic method. In this paper, the proposed modified product codes called MPCs are introduced as an efficient way to embed more data than PPCs by increasing 2r2-1-r2 embedding columns. Unlike PPC, the generation of the check matrix H in MPC is random, and it is different from PPC. In addition a simple solving way of the linear algebraic equations is applied to figure out the problem of expending embedding columns or compensating cases. Furthermore, the MPCs over ℤ4 have been proposed to further enhance not only the performance but also the computation speed which reaches O(n1+σ). Finally, the proposed ℤ4-MPC intends to maximize the embedding rate with maintaining less distortion , and the performance surpasses the existing improved product perfect codes. The performance of large embedding rate should have the significance in the high-capacity of covert communication.

A Study on Photoreceptor by Using the Effect of Additives

  • 유진;김영순;유국현
    • Bulletin of the Korean Chemical Society
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    • 제22권7호
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    • pp.709-715
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    • 2001
  • We have been studied photosensitization mechanism's additive effect, of perylene 3,4,9,10-tetracarboxyl-diimide and X-phthalocyanine (charge generation materials), using the photochemical and photoelectrochemical approach. It was found that the photoreceptor on the excited state reacts with metal oxide, which creates the charge transfer on the interface of SnO2/electrolyte. In the electrode (X5P1) made of five X-phthalocyanine and single perylene 3,4,9,10-tetracarboxyldiimide layers, the cathodic photocurrent of X-phthalocyanine in the 400-600 nm region was increased by the addition of perylene 3,4,9,10-tetracarboxyldiimide. The maximum wavelength of fluorescence of perylene 3,4,9,10-tetracarboxyldiimide showed no dependence on the temperature. The addition of 4-dibenzylamino-2-methylbenzaldehyde diphenylhydrazone known as charge transport material was represented as decreasing photocurrent for X-phthalocyanine and perylene 3,4,9,10-tetracarboxyldiimide, respectively. In the electrode (X1P1) made of single X-phthalocyanine and single perylene 3,4,9,10-tetracarboxyldiimide layers, an anodic photocurrent of about 10.5 nA was generated by addition of hydroquinone at 550 nm. And the characteristic of photoinduced discharge was shown to decrease by a factor of 5 and the speed of dark decay was increased by a factor of 1.2.

질소 및 규산시비수준에 따른 수도품종간 이화명충의 발육ㆍ우화 및 피해정도의 변이 (Variation in Larvae Development and Moth Emergence of Striped Rice Borer (Chilo suppressalis Walker) and Damages in Rice Cultivars under Different Levels of Nitrogen and Silicate Fertilizers)

  • 손상목;김기준
    • 한국작물학회지
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    • 제27권1호
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    • pp.11-19
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    • 1982
  • 본 시험은 이화명충에 대한 경종적 방제법 확립의 가능성 검토의 일환으로서 합리적 시비가 이화명충 발육과 생존.피해 및 우화억제 등에 미치는 효과를 구명하고자 아끼바레와 밀양 2003를 공시하여 규산과 질소의 시비수준을 달리한 Pot시험을 실시하였던 바 그 결과를 요약하면 다음과 같다. 1. 1화기의 유충체중.유충생존율ㆍ피해 등은 밀양 2003에서 아끼바레보다 모두 높았다. 그러나 규산ㆍ질소처리수준간에는 그 차가 인정되지 않았고 우화율은 품종간의 차이뿐만 아니라 규산 수준간의 차이도 인정되었다. 2. 2화기의 유충체중은 아끼바레에서 밀양 2003보다 낮았으며 높은 질소수준에서 높았고, 품종과 규산수준 및 질소 및 규산 수준간의 교호작용이 인정되었다. 3. 2화기 유충의 생존율은 아끼바레가 낮았고 규산시용량을 증가시킬수록 낮아졌으며 경의 규질비와 유충생존율과의 사이에는 높은 부의 상관관계가 나타났다. 4. 백수피해는 품종간의 차이보다 규산시용수준간의 차이가 더 컸지만 아끼바레에서 그리고 규산시용량이 많은 구에서 피해가 적었다. 경의 규산비와 백수율과의 상관관계는 두 품종 모두 높은 부의 상관을 나타냈다. 5. 월동유충의 우화율은 규산시용수준간의 차이가 품종간의 차이보다 월등히 높았는데 밀양2003보 아끼바레에서 낮았고, 규산시용량이 많아질수록 감소하였으며 규산비의 우화율과의 사이에는 높은 부의 상관을 나타냈다. 특히 규산을 시용치 않은 질소 20kg/10a구에서 우화율은 급격히 높아졌다.

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Comparative Studies of Protein Modification Mediated by Fenton-like Reactions of Iron, Hematin, and Hemoglobin: Generation of Different Reactive Oxidizing Species

  • Kim, Young-Myeong;Kim, Sung-Soo;Kang, Gu;Yoo, Yeong-Min;Kim, Ki-Mo;Lee, Mi-Eun;Han, Jeong-A;Hong, Sun-Joo
    • BMB Reports
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    • 제31권2호
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    • pp.161-169
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    • 1998
  • TThe reactive oxygen species oxidatively modify the biological macromolecules, including proteins, lipids, and nucleic acids. Iron- and heme-mediated Fenton-like reactions produce different pro-oxidants. However, these reactive products have not been clearly characterized. We examined the nature of the oxidizing species from the different iron sources by measuring oxidative protein modification and spectroscopic study. Hemoglobin (Hb) and methemoglobin (metHb) were oxidatively modified in $O{\array-\\\dot{2}}$ and $H_{2}O_{2}$ generating systems. Globin and bovine serum albumin (BSA) were also modified by iron, iron-EDTA, hematin, and Hb in an $O{\array-\\\dot{2}}$ generating system. In a $H_{2}O_{2}$ generating system, the iron- and iron-EDTA-mediated protein modifications were markedly reduced while the Hb-and hematin-mediated modifications were slightly increased. In the $O{\array-\\\dot{2}}$ generating system, the iron- and iron-EDTA-mediated protein modifications were strongly inhibited by superoxide dismutase (SOD) or catalase, but heme- and Hb-mediated protein modifications were inhibited only by catalase and slightly increased by SOD. Mannitol, 5,5-dimethyl-l-pyrroline-N-oxide (DMPO), deoxyribose, and thiourea inhibited the iron-EDTA-mediated protein modification. Mannitol and DMPO, however, did not exhibit significant inhibition in the hematin-mediated modification. Desferrioxamine (DFO) inhibited protein modification mediated by iron, but cyanide and azide did not, while the hematin-mediated protein modification was inhibited by cyanide and azide, but not significantly by DFO. The protein-modified products by iron and heme were different. ESR and UV-visible spectroscopy detected the DMPO spin adduct of the hydroxyl radical and ferryl ion generated from iron-EDTA and metHb, respectively. These results led us to conclude that the main oxidizing species are hydroxyl radical in the iron-EDTA type and the ferry I ion in the hematin type, the latter being more effective for protein modification.

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고전압 β-산화갈륨(β-Ga2O3) 전력 MOSFETs (High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors)

  • 문재경;조규준;장우진;이형석;배성범;김정진;성호근
    • 한국전기전자재료학회논문지
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    • 제32권3호
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    • pp.201-206
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    • 2019
  • This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

Molecular Mechanisms of Generation for Nitric Oxide and Reactive Oxygen Species, and Role of the Radical Burst in Plant Immunity

  • Yoshioka, Hirofumi;Asai, Shuta;Yoshioka, Miki;Kobayashi, Michie
    • Molecules and Cells
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    • 제28권4호
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    • pp.321-329
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    • 2009
  • Rapid production of nitric oxide (NO) and reactive oxygen species (ROS) has been implicated in the regulation of innate immunity in plants. A potato calcium-dependent protein kinase (StCDPK5) activates an NADPH oxidase StRBOHA to D by direct phosphorylation of N-terminal regions, and heterologous expression of StCDPK5 and StRBOHs in Nicotiana benthamiana results in oxidative burst. The transgenic potato plants that carry a constitutively active StCDPK5 driven by a pathogen-inducible promoter of the potato showed high resistance to late blight pathogen Phytophthora infestans accompanied by HR-like cell death and $H_2O_2$ accumulation in the attacked cells. In contrast, these plants showed high susceptibility to early blight necrotrophic pathogen Alternaria solani, suggesting that oxidative burst confers high resistance to biotrophic pathogen, but high susceptibility to necrotrophic pathogen. NO and ROS synergistically function in defense responses. Two MAPK cascades, MEK2-SIPK and cytokinesis-related MEK1-NTF6, are involved in the induction of NbRBOHB gene in N. benthamiana. On the other hand, NO burst is regulated by the MEK2-SIPK cascade. Conditional activation of SIPK in potato plants induces oxidative and NO bursts, and confers resistance to both biotrophic and necrotrophic pathogens, indicating the plants may have obtained during evolution the signaling pathway which regulates both NO and ROS production to adapt to wide-spectrum pathogens.

Dipenyleneiodonium Induces Growth Inhibition of Toxoplasma gondii through ROS Induction in ARPE-19 Cells

  • Sun, Pu Reum;Gao, Fei Fei;Choi, Hei Gwon;Zhou, Wei;Yuk, Jae-Min;Kwon, Jaeyul;Lee, Young-Ha;Cha, Guang-Ho
    • Parasites, Hosts and Diseases
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    • 제57권2호
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    • pp.83-92
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    • 2019
  • Based on the reactive oxygen species (ROS) regulatory properties of diphenyleneiodonium (DPI), we investigated the effects of DPI on host-infected T. gondii proliferation and determined specific concentration that inhibit the intracellular parasite growth but without severe toxic effect on human retinal pigment epithelial (ARPE-19) cells. As a result, it is observed that host superoxide, mitochondria superoxide and $H_2O_2$ levels can be increased by DPI, significantly, followed by suppression of T. gondii infection and proliferation. The involvement of ROS in anti-parasitic effect of DPI was confirmed by finding that DPI effect on T. gondii can be reversed by ROS scavengers, N-acetyl-L-cysteine and ascorbic acid. These results suggest that, in ARPE-19 cell, DPI can enhance host ROS generation to prevent T. gondii growth. Our study showed DPI is capable of suppressing T. gondii growth in host cells while minimizing the un-favorite side-effect to host cell. These results imply that DPI as a promising candidate material for novel drug development that can ameliorate toxoplasmosis based on ROS regulation.

배연탈질설비의 성능향상을 휘한 가스혼합에 관한 연구 (A Study on the Flue Gas Mixing for the Performance Improvement of De-NOx plant)

  • 류병남
    • Journal of Advanced Marine Engineering and Technology
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    • 제23권4호
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    • pp.462-472
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    • 1999
  • De-NOx facility using Selective Catalytic Reduction method is the most widely applied one that removes NOx from flue gas emitted from combustion facility such as boiler for power generation engine incinerator etc. Reductant $NH_3\;or\;NH_4OH$ is sprayed into flue gas to convert NOx into $H_2O$ and $N_2.$ Good mixing between flue gas and $NH_3$ is the most important factor to increase reduction in catalytic layer and to reduce unreacted NH3 slip. Therefore the development of mixer device for mixing effect is one of the important part for SCR facility. Objectives of this study are to investigate the relation between flow and concentration field by observation at the wake of delta-wing type mixer. At the first stage qualitative measurement of flow field is conducted by flow visualization using laser light sheet in lab. scale wind tunnel. Also we have conducted the quantitative analysis by comparing flow field measurement using LDV with numerical simulation. On the basis of qualitative and quantitative analysis we investigate the dis-tribution of flow and concentration in flow model facility. The results of an experimental and compu-tational examination of the vortex structures shed from delta wing type vortex generator having $40^{\circ}$ angle of attack are presented, The effects of vortex structure on the gas mixing is discussed, too.

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