• Bulletin of the Korean Chemical Society
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• v.26 no.10
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• pp.1525-1528
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• 2005

The synthesis and characterization of ${K_3[Ru(C_2O_4)3]{\cdot}4H_2O\;(C_2O_4}^{2-}$ = oxalato anoin) complex are described, and its redox properties (in buffer solution of pH = 12) have been investigated. This complex is used for in situ generation of oxoruthenates complexes which have been characterized by electronic spectroscopy. Reaction of ${K_3[Ru(C_2O_4)3]{\cdot}4H_2O$ with excess ${S_2O_8}^{2-}$ in molar KOH generates trans-${[RuO_3(OH)_2]^{2-}/S_2O_8}^{2-}$ reagent while with excess ${BrO_3}^-$ in molar $Na_2CO_3$ generates ${[RuO_4]^-/BrO_3}^-$ reagent. Avoiding the direct use of [$RuO_4$] the organic-soluble $(n-Pr_4N)^+[RuO_4]^-$, (TPAP) has been isolated by reaction of $K_3[Ru(C_2O_4)3]{\cdot}4H_2O$ with excess ${BrO_3}^-$ in molar carbonate and n-$Pr_4$NOH. In a mixture of $H_2O/CCl_4$ ruthenium tetraoxide can be generated by reaction of $K_3[Ru(C_2O_4)3]{\cdot}4H_2O$ with excess ${IO_4}^-$. The catalytic activities of oxoruthenates that have been made from $K_3[Ru(C_2O_4)3]{\cdot}4H_2O$ towards the oxidation of benzyl alcohol, piperonyl alcohol, benzaldehyde and benzyl amine at room temperature have been studied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1029-1034
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• 2003

The Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$, superconducting thin films arc fabricated by using the sputtering and evaporation method. Because we confirmed the sticking ratio of Bi element in the Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$ superconducting thin film fabricated by using the sputtering method was much lower than the expected value, to get the enough number of the flakes of Bi, faraday cup was used to evaporate Bi clement. As a result of the fabrication, Bi 2201 and Bi 2212 single phases could be made by the optima of deposition condition. And we confirmed the sticking coefficient of Bi element was clearly related to the temperature change of the substrate and the generation of Bi22l2 phase

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• Bulletin of the Korean Chemical Society
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• v.29 no.1
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• pp.181-186
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• 2008

2,5-Di-(2'-hydroxyethoxy)-4'-nitrostilbene (3) was prepared and polycondensed with terephthaloyl chloride, adipoyl chloride, and sebacoyl chloride to yield novel T-type polyesters (4-6) containing the NLO-chromophores dioxynitrostilbenyl groups, which constituted parts of the polymer backbones. Polymers 4-6 are soluble in common organic solvents such as acetone and N,N-dimethylformamide. They showed thermal stability up to 260 oC in thermogravimetric analysis with glass-transition temperatures obtained from differential scanning calorimetry in the range 90-95 oC. The second harmonic generation (SHG) coefficients (d33) of poled polymer films at the 1064 nm fundamental wavelength were around 1.42 ´ 10-9 esu. The dipole alignment exhibited high thermal stability up to 5 oC higher than glass-transition temperature (Tg), and there was no SHG decay below 100 oC due to the partial main-chain character of polymer structure, which is acceptable for NLO device applications.

• Toxicological Research
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• v.16 no.3
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• pp.179-185
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• 2000

Zinc is known to generate reactive oxygen species (ROS) including superoxide anion and hydrogen peroxide ($H_2O_2$), which eventually contribute to cytotoxicity in a variety of cell types. Here in, we demonstrated that zinc decreased the viability of C6 glial cells in a time and dose-dependent manner, which was revealed as apoptosis characterized by ladder-pattern fragmentation of genomic DNA. chromatin condensation and DNA fragmentation in Hoechst dye staining. Zinc-induced apoptosis of C6 glial cells was prevented by the addition of catalase and antioxidants including reduced glutathione (GSH), N-acetyl-L-cysteine (NAC) and pyrrolidinedithiocarbamate (PDTC). Wefurther confirmed that zinc decreased intrac-ellular levels of GSH and generated $H_2O_2$in C6 glial cells. Moreover, antioxidants also decreased the generation of zinc-induced $H_2O_2$ in C6 glial cells. These data indicated that zinc-induced the apoptotic death of C6 glial cells via generation of reactive oxygen species such as $H_2O_2$.

• Clean Technology
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• v.24 no.3
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• pp.212-220
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• 2018

Oxy-fuel combustion is considered as a promising greenhouse gas reduction technology in power plant. In this study, the behaviors of NO and $SO_2$ were investigated under the condition that in-furnace $deNO_x$ and $deSO_x$ methods are applied in oxy-fuel circulating fluidized bed combustion condition. In addition, the generation trends of $SO_3$, $NH_3$ and $N_2O$ were observed. For the purpose, limestone and urea solution were directly injected into the circulating fluidized bed combustor. The in-furnace $deSO_x$ method using limestone could reduce the $SO_2$ concentration in exhaust gas from ~403 to ~41 ppm. At the same experimental condition, the $SO_3$ concentration in exhaust gas was also reduced from ~3.9 to ~1.4 ppm. This trend is mainly due to the reduction of $SO_2$. The $SO_2$ is the main source of the formation of $SO_3$. The negative effect of $CaCO_3$ in limestone, however, was also appeared that it promotes the NO generation. The NO concentration in exhaust gas reduced to ~26 - 34 ppm by appling selective non-catalytic reduction method using urea solution. The $NH_3$ concentration in exhaust gas was appeared up to ~1.8 ppm during injection of urea solution. At the same time, the $N_2O$ generation also increased with increase of urea solution injection. It seems that the HNCO generated from pyrolysis of urea converted into $N_2O$ in combustion atmosphere. From the results in this study, the generation of other pollutants should be checked as the in-furnace $deNO_x$ and $deSO_x$ methods are applied.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

• Journal of Korean Society on Water Environment
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• v.30 no.4
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• pp.394-402
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• 2014

High-voltage dielectric discharges are an emerging technique in environmental pollutant degradation, which are characterized by the production of hydroxyl radicals as the primary degradation species. The initiation and propagation of the electrical discharges depends on several physical, chemical, and electrical parameters such as 1st and 2nd voltage of power, gas supply, conductivity and pH. These parameters also influence the physical and chemical characteristics of the discharges, including the production of reactive species such as OH, $H_2O_2$ and $O_3$. The experimental results showed that the optimum 1st voltage and oxygen flow rate for RNO (N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical) degradation were 160 V (2nd voltage of is 15 kV) and 4 L/min, respectively. As the 2nd voltage (4 kV to 15 kV) was increase, RNO degradation was increased and, generated $H_2O_2$ and $O_3$ concentration were increased. The conductivity of the solution was not influencing the RNO degradation, $H_2O_2$ and $O_3$ generation. The pH effect on RNO degradation was not high. However, the lower pH and the conductivity, the higher $H_2O_2$ and $O_3$ generation were observed.

• Resources Recycling
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• v.9 no.5
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• pp.16-21
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• 2000

Generation of abnormally large grains in the microstructure of small grains has been investigated on some ferrites. Some fractions of large grains were observed in the microstructue of sintered ZnFe$_2$O$_4$, Mn-ZnFe$_2$O$_4$, Fe$_3$O$_4$(in $N_2$) and MnFe$_2$O$_4$(in air). On the other hand, the large grains were not observed in $NiFe_2$$O_4$ and $CoFe_2$$O_4$, independent of calcining and sintering conditions. The large grains seem to be generated in such ferrites that are easy to very their compositions or valencies at high temperatures. as the sintering proceeded, the number of large grains was increasing to from a continuous structure consisting of large grains, while the size of large grains did not increase remarkably. In addition, the growth of small grains was also very slow during the generation of the large grains. The large grains appeared be suddenly generated after some induction periods. Avrami equation could be applied to the relation between net volume of large grains and sintering time. Thus, the grain boundaries may be strongly stabilized when the large grains are generated. The large grain is generated y the local activation of the stabilized rain boundaries, which is caused by the variation of composition or valencies during sintering. It is concluded that the essence of the abnormal gain growth is not the generation of abnormally large grains, but the abnormal stabilization and the local activation of he grain boundaries.

• Plant Biotechnology Reports
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• v.2 no.2
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• pp.113-122
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• 2008

Nitric oxide (NO) affects the growth and development of plants and also affects plant responses to various stresses. Because NO induces root differentiation, we examined whether or not it is involved in increased ROS generation. Treatments with sodium nitroprusside (SNP), an NO donor, 2-phenyl-4,4,5,5-tetramethylimidazoline-1-oxyl-3-oxide (PTIO), a specific NO scavenger, and $N{\omega}-nitro-{\text\tiny{L}}-arginine$ methyl ester hydrochloride (${\text\tiny{L}}-NAME$), an NO synthase (NOS) inhibitor, revealed that NO is involved in the adventitious root growth of mountain ginseng. Supply of an NO donor, SNP, activates NADPH oxidase activity, resulting in increased generation of $O_2{^{{\cdot}-}}$, which subsequently induces growth of adventitious roots. Moreover, treatment with diphenyliodonium chloride (DPI), an NADPH oxidase inhibitor, individually or with SNP, inhibited root growth, NADPH oxidase activity, and $O_2{^{{\cdot}-}}$ anion generation. Supply of the NO donor, SNP, did not induce any notable isoforms of enzymes; it did, however, increase the activity of pre-existing bands of NADPH oxidase, superoxide dismutase, catalase, peroxidase, ascorbate peroxidase, and glutathione reductase. Enhanced activity of antioxidant enzymes induced by SNP supply seems to be responsible for a low level of $H_2O_2$ in the adventitious roots of mountain ginseng. It was therefore concluded that NO-induced generation of $O_2{^{{\cdot}-}}$ by NADPH oxidase seems to have a role in adventitious root growth of mountain ginseng. The possible mechanism of NO involvement in $O_2{^{{\cdot}-}}$ generation through NADPH oxidase and subsequent root growth is discussed.