• Title/Summary/Keyword: $N_2O$ generation

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Generation of ROS by IgE-Dependent Histamine-Releasing Factor in RBL-2H3 Cells (RBL-2H3에서 IgE-dependent Histamine-releasing Factor에 의한 활성산소종 생성에 관한 연구)

  • Choo, Yee-Shin;Lee, Kyung-Iim
    • Microbiology and Biotechnology Letters
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    • v.33 no.3
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    • pp.231-235
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    • 2005
  • Histamine-releasing factors (HRFs) are soluble mediators that can release histamine and other mediators from basophils and mast cells and their activity can vary, depending on the type of IgE. The activity of HRFs is affected by the presence of IgE, although HRF is thought to bind to a specific receptor other than IgE. Until now, HRF signaling pathway including its receptor remains unclear in spite of numerous studies. Since there had been many reports about reactive oxygen species (ROS) as a signaling molecule rather than as a by-product of metabolism, we investigated the possibility of ROS as an intracellular messenger involved in HRF-mediated histamine degranulation. In RBL-2H3 cells, ROS was generated by HRF using $H_2O_2$-sensitive fluorescence of fluorescent 2', 7'-dichlorofluorescein ($H_2DCFDA$). These effects were blocked by anti-oxidant N-acetylcysteine (NAC). These results suggest that ROS generation could play a role as an intracellular messenger in histamine release by HRF.

The characteristics of Pt thin films prepared by DC magnetron sputter (DC Magnetron Sputter로 제조된 Pt 박막의 특성)

  • Na, Dong-Myong;Kim, Young-Bok;Park, Jin-Seong
    • Journal of Sensor Science and Technology
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    • v.16 no.2
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    • pp.159-164
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    • 2007
  • Thin films of platinum were deposited on a $Al_{2}O_{3}/ONO(SiO_{2}-Si_{3}N_{4}-SiO_{2})/Si$-substrate with an 2-inch Pt(99.99 %) target at room temperature for 20, 30 and 60 min by DC magnetron sputtering, respectively X-ray diffract meter (XRD) was used to analyze the crystallanity of the thin films and field emission scanning electron microscopy (FE-SEM) was employed for the investigation on crystal growth. The densification and the grain growth of the sputtered films have a considerable effect on sputtering time and annealing temperatures. The resistance of the Pt thin films was decreased with increasing deposition time and sintering temperature. Pt micro heater thin film deposited for 60 min by DC magnetron sputtering on an $Al_{2}O_{3}$/ONO-Si substrate and annealed at $600^{\circ}C$ for 1 h in air is found to be a most suitable micro heater with a generation capacity of $350^{\circ}C$ temperature and 645 mW power at 5.0 V input voltage. Adherence of Pt thin film and $Al_{2}O_{3}$ substrate was also found excellent. This characteristic is in good agreement with the uniform densification and good crystallanity of the Pt film. Efforts are on progress to find the parameters further reduce the power consumption and the results will be presented as soon as possible.

Etch Characteristics of MgO Thin Films in Cl2/Ar, CH3OH/Ar, and CH4/Ar Plasmas

  • Lee, Il Hoon;Lee, Tea Young;Chung, Chee Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.387-387
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    • 2013
  • Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

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The Effects of Hydroxyl Radical Generation by Means of the Addition of $H_2O_2$ and $Fe^{3+}-EDTA$ in the Electron-beam Process (전자빔 공정에서 $H_2O_2$$Fe^{3+}-EDTA$의 첨가가 수산화라디칼 생성에 미치는 영향)

  • Kwon, Bumgun;Kwon, Joongkuen;Kim, Jongoh
    • Journal of the Korean GEO-environmental Society
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    • v.13 no.10
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    • pp.69-76
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    • 2012
  • This study focuses both on the quantitative measurement of hydroxyl radicals formed by an electron beam (E-beam) process and on the decomposition of pentachlorophenol(PCP) in the presence of $H_2O_2$ and $Fe^{3+}-EDTA$ as additives. To attain this objective, the quantitative measurement of hydroxyl radical was performed with the hydroylation of benzoic acid (BA), producing hydroxybenzoic acid (OHBA). As a result, the concentrations of hydroxyl radical measured were lower than those of hydroxyl radical predicted. Probably, it indicates that the reactive species generated during E-beam irradiation are able to scavenge the hydroxyl radicals. In particular, the degradation of PCP was promoted by the addition of $H_2O_2$ (< 1mM). On the other hand, its degradation as well as the generation of chloride ions as a by-product was inhibited by the addition of $H_2O_2$ (> 1mM), and thus carbon yield(%) of oxalic acid as a by-product was increased. During E-beam irradiation the addition of $Fe^{3+}-EDTA$ effectively decomposed the PCP, thus increasing the G-values. Considering the formation of OHBA and the decomposition of PCP, these results suggest that the addition of $Fe^{3+}-EDTA$ in the E-beam process can produce the further hydroxyl radicals and enhance the efficiency of PCP decomposition at low dose.

Reactive Oxygen Species and Nitrogen Species Differentially Regulate Neuronal Excitability in Rat Spinal Substantia Gelatinosa Neurons

  • Lee, Hae In;Park, A-Reum;Chun, Sang Woo
    • International Journal of Oral Biology
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    • v.39 no.4
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    • pp.229-236
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    • 2014
  • Reactive oxygen species (ROS) and nitrogen species (RNS) are implicated in cellular signaling processes and as a cause of oxidative stress. Recent studies indicate that ROS and RNS are important signaling molecules involved in nociceptive transmission. Xanthine oxidase (XO) system is a well-known system for superoxide anions ($O{_2}^{{\cdot}_-}$) generation, and sodium nitroprusside (SNP) is a representative nitric oxide (NO) donor. Patch clamp recording in spinal slices was used to investigate the role of $O{_2}^{{\cdot}_-}$ and NO on substantia gelatinosa (SG) neuronal excitability. Application of xanthine and xanthine oxidase (X/XO) compound induced membrane depolarization. Low concentration SNP ($10{\mu}M$) induced depolarization of the membrane, whereas high concentration SNP (1 mM) evoked membrane hyperpolarization. These responses were significantly decreased by pretreatment with phenyl N-tert-butylnitrone (PBN; nonspecific ROS and RNS scavenger). Addition of thapsigargin to an external calcium free solution for blocking synaptic transmission, led to significantly decreased X/XO-induced responses. Additionally, X/XO and SNP-induced responses were unchanged in the presence of intracellular applied PBN, indicative of the involvement of presynaptic action. Inclusion of GDP-${\beta}$-S or suramin (G protein inhibitors) in the patch pipette decreased SNP-induced responses, whereas it failed to decrease X/XO-induced responses. Pretreatment with n-ethylmaleimide (NEM; thiol-alkylating agent) decreased the effects of SNP, suggesting that these responses were mediated by direct oxidation of channel protein, whereas X/XO-induced responses were unchanged. These data suggested that ROS and RNS play distinct roles in the regulation of the membrane excitability of SG neurons related to the pain transmission.

Fully parallel low-density parity-check code-based polar decoder architecture for 5G wireless communications

  • Dinesh Kumar Devadoss;Shantha Selvakumari Ramapackiam
    • ETRI Journal
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    • v.46 no.3
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    • pp.485-500
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    • 2024
  • A hardware architecture is presented to decode (N, K) polar codes based on a low-density parity-check code-like decoding method. By applying suitable pruning techniques to the dense graph of the polar code, the decoder architectures are optimized using fewer check nodes (CN) and variable nodes (VN). Pipelining is introduced in the CN and VN architectures, reducing the critical path delay. Latency is reduced further by a fully parallelized, single-stage architecture compared with the log N stages in the conventional belief propagation (BP) decoder. The designed decoder for short-to-intermediate code lengths was implemented using the Virtex-7 field-programmable gate array (FPGA). It achieved a throughput of 2.44 Gbps, which is four times and 1.4 times higher than those of the fast-simplified successive cancellation and combinational decoders, respectively. The proposed decoder for the (1024, 512) polar code yielded a negligible bit error rate of 10-4 at 2.7 Eb/No (dB). It converged faster than the BP decoding scheme on a dense parity-check matrix. Moreover, the proposed decoder is also implemented using the Xilinx ultra-scale FPGA and verified with the fifth generation new radio physical downlink control channel specification. The superior error-correcting performance and better hardware efficiency makes our decoder a suitable alternative to the successive cancellation list decoders used in 5G wireless communication.

Antioxidant Activity from the Stem Bark of Albizzia julibrissin

  • Jung, Mee-Jung;Chung, Hae-Young;Kang, Sam-Sik;Choi, Jin-Ho;Bae, Kae-sun;Choi, Jae-Sue
    • Archives of Pharmacal Research
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    • v.26 no.6
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    • pp.458-462
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    • 2003
  • The antioxidant activity of the stem bark from Albizzia julibrissin was evaluated for its potential to scavenge 1,1-diphenyl-2-picrylhydrazyl (DPPH) radicals, to inhibit the generation of the hydroxyl radical ($\cdot OH$), total reactive oxygen species (ROS) and to scavenge authentic peroxynitrites ($ONOO^{-}$). The methanol extract of A. julibrissin exhibited strong antioxidant activity in the tested model systems. Therefore, it was further fractionated using several solvents. The antioxidant activity of the individual fractions were in the order of ethyl acetate (EtOAc) > n-butanol (n-BuOH) > dichloromethane ($CH_2 CI-2$) > and water ($H_2O$). The ethyl acetate soluble fraction, which exhibited strong antioxidant activity, was further purified by repeated silicagel, Sephadex LH-20 and RP-18 gel column chromatography. Sulfuretin (1) and 3 ,4 ,7-trihydroxyflavone (2) were isolated as the active principles. Compounds 1 and 2 exhibited good activity in all tested model systems. Compound 1 exhibited five times more inhibitory activity on the total ROS than Trolox. Compound 2 showed six times stronger DPPH radical scavenging activity than L-ascorbic acid. These results show the possible antioxidant activity of the A. julibrissin crude extract and its major constituents.

Sensitive Characteristics of Hot Carriers by Bias Stress in Hydrogenated n-chnnel Poly-silicon TFT (수소 처리시킨 N-채널 다결정 실리콘 TFT에서 스트레스인가에 의한 핫캐리어의 감지 특성)

  • Lee, Jong-Kuk;Lee, Yong-Jae
    • Journal of Sensor Science and Technology
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    • v.12 no.5
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    • pp.218-224
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    • 2003
  • The devices of n-channel poly silicon thin film transistors(TFTs) hydrogenated by plasma, $H_2$ and $H_2$/plasma processes are fabricated. The carriers sensitivity characteristics are analyzed with voltage bias stress at the gate oxide. The parametric sensitivity characteristics caused by electrical stress conditions in hydrogenated devices are investigated by measuring the drain current, threshold voltage($V_{th}$), subthreshold slope(S) and maximum transconductance($G_m$) values. As a analyzed results, the degradation characteristics in hydrogenated n-channel polysilicon thin film transistors are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The generation of traps in gate oxide are mainly dued to hot electrons injection into the gate oxide from the channel region.

Thermal stability of surface modified Ni-Cr-alloys in molten FLiNaK salt (표면처리된 Ni-Cr계 합금의 FLiNaK 용융염 하에서의 고온 안정성)

  • Kwang, Hyun Cho;Bang, Hyun;Lee, Tae Suk;Lee, Byeong Woo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.5
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    • pp.227-232
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    • 2012
  • Inconel 617 and Hastelloy X are the most promising candidate materials for the heat exchanger of next generation nuclear reactor. Surface coating and its effects on high temperature properties for the Inconel 617 and Hastelloy X under molten FLiNaK (LiF-NaF-KF) salt environment have been investigated. For TiAlN and $Al_2O_3$ overlay coatings, the two different PVD (physical vapor deposition) methods of an arc discharge and a sputtering were applied, respectively. A study for the thermal stability of the surface modified Ni-Cr alloy substrates has been conducted. To evaluate the corrosion mechanism of Ni-Cr alloys in the molten salt, a ruptured Inconel pipe used for the molten salt transportation has been analyzed. The thermal properties of morphological and structural properties each sample were characterized before and after heat-treatment at $600^{\circ}C$ in molten FLiNaK salt. The results showed that the TiAlN and $Al_2O_3$ overlay coated specimens had the enhanced high temperature stability.

Effects of Operating Parameters on Electrochemical Degradation of Rhodamine B and Formation of OH Radical Using BDD Electrode (BDD 전극을 이용한 OH 라디칼 생성과 염료 분해에 미치는 운전인자의 영향)

  • Park, Young-Seek;Kim, Dong-Seog
    • Journal of Environmental Science International
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    • v.19 no.9
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    • pp.1143-1152
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    • 2010
  • The purpose of this study is to degradation of Rhodamine B (RhB, dye) and N, N-Dimethyl-4-nitrosoaniline (RNO, indicator of the electro-generation of OH radical) in solution using boron doped diamond (BDD) electrode. The effects of applied current (0.2~1.0 A), electrolyte type (NaCl, KCl, and $Na_2SO_4$) and electrolyte concentration (0.5~3.0 g/L), solution pH (3~11) and air flow rate (0~4 L/min) were evaluated. Experimental results showed that RhB and RNO removal tendencies appeared with the almost similar thing, except of current. Optimum current for RhB degradation was 0.6 A, however, RNO degradations was increased with increase of applied current. The RhB and RNO degradation of Cl type electrolyte were higher than that of the sulfate type. The RhB and RNO degradation were increased with increase of NaCl concentration and optimum NaCl dosage was 2.5 g/L. The RhB and RNO concentrations were not influenced by pH under pH 7. Optimum air flow rate for the oxidants generation and RhB and RNO degradation were 2 L/min. Initial removal rate of electrolysis process was expressed Langmuir - Hinshelwood equation, which is used to express the initial removal rate of UV/$TiO_$2 process.