• Korean Chemical Engineering Research
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• 제45권3호
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• pp.258-263
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• 2007

배가스 이산화탄소 처리를 위한 화학적 흡수공정의 새로운 흡수제로서 암모니아수의 적용 가능성을 고찰하였다. 이산화탄소 흡수용량과 침전 발생의 관점에서 적합한 암모니아수 흡수제 농도와 $CO_2$ 부하(loading, $molCO_2/molNH_3$)를 결정하였다. 이를 위하여 전해액에 대한 Pitzer 모델을 이용하여 암모니아 흡수제 농도에 따른 흡수용량과 침전 발생여부를 계산하였다. $5\;molNH_3/kgH_2O$ 이상의 암모니아수 흡수제를 사용하여 기존 아민류 흡수제 이상의 흡수용량은 얻을 수 있었다. 각 암모니아 흡수제 농도에서 $NH_4HCO_3$ 침전의 발생으로 인하여 조업이 제약되는 $CO_2$ 부하를 구하였다. $5{\sim}14\;molNH_3/kgH_2O$의 암모니아 흡수제는 293, 313 K에서 $CO_2$ 부하 0.5 이상에서 침전이 발행하였다. 침전 생성 $CO_2$ 부하값 이하로 흡수탑을 조업함으로써 고농도 암모니아 흡수제가 배가스 $CO_2$ 처리 공정에 사용될 수 있음을 알 수 있었다. 흡수용량과 침전발생을 고려하여 배가스 이산화탄소 처리를 위한 흡수제 최적온도는 암모니아수 농도에 따라 297~312 K이었다.

• International Journal of Automotive Technology
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• 제4권1호
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• pp.9-19
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• 2003

Exhaust emissions were characterized for a fleet of 10 alternative-fuel vehicles (AFVx) including 5 compressed natural gas (CNG) vehicles. 3 liquefied petroleum gas (LPG) vehicles and 2 85% methanol/15% California Phase 2 gasoline (M85) vehicles. In addition to the standard regulated emissions and detailed speciation of organic gas compounds, Fourier Transform Infrared Spectroscopy (FTIR) was used to measure ammonia (NH$_3$) and nitrous oxide ($N_2$O) emissions. NH$_3$, emissions averaged 0.124 g/mi for the vehicle fleet with a range from <0.004 to 0.540 g/mi. $N_2$O emissions averaged 0.022 g/mi over the vehicle fleet with range from <0.002 to 0.077 g/mi. Modal emissions showed that both NH$_3$, and $N_2$O emissions began during catalyst light-off and continued as the catalyst reached its operating temperature. $N_2$O emissions primarily were formed during the initial stages of catalyst light-off. Detailed speciation measurements showed that the principal component of the fuel was also the primary organic gas species found in the exhaust. In particular, methane, propane and methanol composed on average 93%, 79%, and 75% of the organic gas emissions, respectively, for the CNG, LPG. and M85 vehicles.

• 한국세라믹학회지
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• 제43권7호
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• pp.445-450
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• 2006

The preparation of AlN powder by SHS in the system of $Al-AlN-NH_4Cl$ was investigated in this study. In the preparation of AlN powder, the effect of gas pressure and the composition such as Al, AlF, and additive in mixture on the reactivity were investigated. At 60 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure AlN was 35 wt%Al+5 wt% $NH_4Cl+60wt%$AlN. The AlN powder synthesized in this condition was a single phase AlN with a whisker morphology.

• 센서학회지
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• 제8권6호
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• pp.454-460
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• 1999

스크린 프린팅 법으로 알루미나 기판 위에 $LaCoO_3$ 후막을 형성하여 열처리 온도에 따른 $C_4H_{10}$, $NH_3$, $NO$ 및 CO 가스에 대한 감도를 조사하였다. X-선 분석과 SEM 사진을 통해 $LaCoO_3$ 후막의 구조적 특성을 관찰하였다. 제조한 센서는 $C_4H_{10}$, $NH_3$ NO 가스에 대한 감도보다 CO 가스에 대한 감도가 우수하였다. 후막의 최적 열처리온도와 동작온도는 각각 $800^{\circ}C$ 및 $150^{\circ}C$였다. CO 가스 500ppm과 1250ppm에 대한 감도는 각각 72%와 95%였다.

• 센서학회지
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• 제18권1호
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• pp.72-76
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• 2009

The sensing system was designed and fabricated to investigate the ferment environment of soybeans. $NH_3$ gas was saturated after about 7 h and $CO_2$ gas was reached the peak after about 8 h in the inoculation of Bacillus subtilis. However, times that $CO_2$ gas and $NH_3$ gas were reached maximum value without Bacillus subtilis were about 15 h and 18 h, respectively. The sample that inoculated Bacillus subtils had deeper taste than one without it. We found that the peak time of $CO_2$ gas means the starting time of fermentation. If we control the operating time after the start of fermentation, it is expected to make a suitable Chungkukjang to individual preference.

• 전자공학회논문지D
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• 제36D권7호
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• pp.17-25
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• 1999

PECVD 법을 이용하여 Tungsten Nitride($WN_x$) 박막을 $WSi_3N_4$ 기판위에 형성하였다. $WN_x$ 박막은 기관온도, 가스의 유량, rf power 등의 공정변수를 변화시키면서 형성되었고, 서로 다른 질소원으로 $NH_3$와 $N_2$를 각각 사용하여 박막의 특성을 조사하였다. $WN_x$ 막 내의 질소함량은 $NH_3$와 $N_2$의 유량에 따라 0~45% 정도로 변화하였으며, $NH_3$를 사용하였을 때, 최고 160nm/min의 높은 성장률을 나타내었다. $WSi_3N_4$ 기판 위에서는 TiN이나 Si 위에서보다 높은 성장률을 나타내었다. $WN_x$ 박막의 순도를 AES로 측정해 본 결과 $NH_3$를 사용했을 때 고순도의 박막을 얻을 수 있었다. XRD 분석으로 순수한 다결정의 W가 비정질의 $WN_x$로 변화되는 것을 알 수 있었으며, 이것은 $WN_x$가 식각 공정시 미세 패턴 형성이 W보다 유리할 것이라는 것을 보여준다. TiN, NiCr, Al 등의 다양한 기판 위에 형성해 본 결과 Al 위에서 최대 $1.6 {\mu}m$의 두꺼운 막이 형성되었다.

• 한국세라믹학회지
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• 제29권9호
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• pp.681-688
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• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• 한국대기환경학회지
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• 제29권2호
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• pp.163-170
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• 2013

The fine-particles, moisture and variety of hazardous gases are produced during electronic manufacture process. Most of the fine-particles are 0.1~10 ${\mu}m$ in size and the hazardous gases such as HF, $SiH_4$, CO, $NH_3$, etc. seriously affect environment, human's body and manufacturing process. To remove these characterized gases and fine-particles, Water-Cyclone designed and tested for removal efficiency on fine-particles and $NH_3$ under -980Pa negative pressure condition. As a result, under 0.1~1.0 $m^3/min$ flow condition, the efficiency on 5 ${\mu}m$ particles was 80~96%, 10 ${\mu}m$ particles was 86~96%, and 20 ${\mu}m$ particles was 91~99%. Besides, the removal efficiency on soluble gas $NH_3$ was 56.5% at 0.5m3/min and 79.1% at 1.0m3/min under 500 ppm flow concentration and 70.0% at 1.0 $m^3/min$ under 1,000 ppm flow concentration. Therefore, on particles, as the flow rate and particle size increased, the collection efficiency rate was increased. On soluble gas, as the flow rate increased, the removal efficiency was increased under the same concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.116-116
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• 2007

We investigated the characteristics of the Hafnium silicate (Hf-silicate) film which is grown by ALD (atomic layer deposition). The Hf-silicate films that were annealed by the RTP. The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas and $NH_3$ gas annealing, were investigated by XPS, TEM and I-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The tendency of nitnitridation in NO gas and $NH_3$ is different. Leakage current is improved in post NO gas annealing.

• 한국가금학회:학술대회논문집
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• 한국가금학회 2004년도 제21차 정기총회 및 학술발표회
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• pp.103-104
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• 2004

본 연구는 산란계의 생산성, 위장관내 미생물 균총, 배설물중의 NH$_3$ 및 VFA의 발생량 및 난황중의 지방산 조성에 미치는 Ceramics의 효과를 구명하기 위해서 실시되었다. 총 360수의 34주령 산란계를 공시하여 Ceramics 분말 0.0 %(대조구), 0.3 % 및 0.6 %를 첨가한 사료로 6주 동안의 사양시험을 실시하였다. 결론적으로 34~40주령의 산란계 사료에 0.3 %의 Ceramics 분말 첨가는 생산성 향상, 장관내 E. coli. 및 Salmonella 수의 감소에 의한 배설물 중의 NH$_3$ 및 VFA의 발생량 감소 및 난황중 n-6/n-3 비율을 개선시킬 가능성이 인정되었다.