• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.272-275
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• 2005

The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.

• Journal of Ocean Engineering and Technology
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• v.2 no.2
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• pp.130-137
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• 1988

This thesis introduced that character of a treatment technique for a mading synthetic resin Hifiow-Ring. The material system of packings make an experiment air$NH_{3}$/air$H_{2}SO_{4}$, $SO_{2}$-air/NaOH, $NH_{3}$-air/$/H_{2}SO_{4}$ under general conditions. Lattices packing compared with conventional packings was proved low pressure loss and high separation efficiency for high loading per trans unit. And an inflow materal tested for absorption and rectification, it made an experiment under a range regular temperature, low energy and small amount of money. That made possible in simple equation, volume material tranfer coefficient$\beta_{L}$ . a by absorption or $\beta_{V}$ .a calculated in all range loading. The peculiarity pressure loss $\Delta\;P/NUT_{ov}$ for Hiflow-ring contributed to a fall cost of energy, a grade number of a vacuum rectification and absorption calculation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.247-250
• /
• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in 300$^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying NH$_3$ gas flow rate. As NH$_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES(optical emission spectroscopy). N-H bonding(3390cm$\^$-1/) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in SiH$_4$

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.11
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• pp.2095-2099
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• 2007

In this paper, the optimum amorphous silicon nitride thin film is deposited using plasma enhanced chemical vapor deposition(PECVD). Amorphous silicon nitride is deposited using $SiH_4$ and $NH_3$ gas. At this time, electrical and optical characteristics of amorphous silicon nitride and deposition rate are changed under deposition condition such as $SiH_4$, $NH_3$ and $N_2$ gas flow rate, chamber pressure, rf power and substrate temperature. From the experimental results, we can estimate that the deposition condition makes a good electrical characteristic of amorphous silicon nitride thin film.

• Journal of Sensor Science and Technology
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• v.21 no.3
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• pp.167-171
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• 2012

Ag- and Pd-loaded $SnO_2$ nanowire network sensors were prepared by the growth of $SnO_2$ nanowires via thermal evaporation, the coating of slurry containing $SnO_2$ nanowires, and dropping of a droplet containing Ag or Pd nanoparticles, and subsequent heat treatment. All the pristine, Pd-loaded and Ag-loaded $SnO_2$ nanowire networks showed the selective detection of $C_2H_5OH$ with low cross-responses to CO, $H_2$, $C_3H_8$, and $NH_3$. However, the relative gas responses and gas selectivity depended closely on the catalyst loading. The loading of Pd enhanced the responses($R_a/R_g$: $R_a$: resistance in air, $R_g$: resistance in gas) to CO and $H_2$ significantly, while it slightly deteriorated the response to $C_2H_5OH$. In contrast, a 3.1-fold enhancement was observed in the response to 100 ppm $C_2H_5OH$ by loading of Ag onto $SnO_2$ nanowire networks. The role of Ag catalysts in the highly sensitive and selective detection of $C_2H_5OH$ is discussed.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.4
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• pp.609-617
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• 2000

This study is aimed at investigating an effect of HCl gas on selective reduction of NOx over a CuHM and $V_2O_5-WO_3/TiO_2$ catalyst. SCR process is the most effective method to remove NOx, but catalyst can be deactivated by the acidic gas such as HCl gas which is also included in flue gas from the incinerator. In dry condition of flue gas, the CuHM catalyst treated by HCl gas has shown higher NO removal activity than the fresh catalyst. The activity of the catalyst can be restored by treating at $500^{\circ}C$. On the contrary. $V_2O_5-WO_3/TiO_2$ catalyst is obviously deactivated by HCl and the deactivation increases in proportion to the concentration of HCl gas. The deactivated catalyst is not restored to it's original activity by heat treatment for regeneration. In wet flue gas stream, the CuHM catalyst has shown lower activity than fresh catalyst and $V_2O_5-WO_3/TiO_2$ catalyst was severely deactivated by HCl treatment. The activity loss of catalysts are mainly due to the decrease of Br$\ddot{o}$nsted acid site on the catalyst surface by $NH_3$ TPD. The change of BET surface area of CuHM catalyst after the reaction isn't observed but $V_2O_5-WO_3/TiO_2$ catalyst is observed. The amount of $Cu^{{+}{+}}$ and $V_2O_5$ is decreased after the reaction. From these results, it is expected that CuHM catalyst should be better than $V_2O_5-WO_3/TiO_2$ catalyst for its application to the incineration of flue gas.

• Applied Chemistry for Engineering
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• v.34 no.1
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• pp.15-22
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• 2023

Recent studies have actively investigated ways to improve the economic feasibility and efficiency of the Fischer-Tropsch process by increasing the yields of the monocyclic aromatic compounds (BTEX). In this study, ethylene was selected as a model of F-T-derived hydrocarbons, and the ethylene-to-aromatics (ETA) reaction was investigated according to changes in acid characteristics, mesopores, and crystallinity of HZSM-5 (HZ5). Fluorinated HZ5 was prepared by calcination followed by impregnation of an aqueous NH₄F solution having different molar concentrations in HZ5, and the structural and chemical properties of F/HZ5 were investigated through Brunauer-Emmett-Teller (BET), solid-state nuclear magnetic resonance (NMR), X-ray photoelectron spectroscopy (XPS), NH₃-temperature-programmed desorption (TPD), and pyridine-IR spectroscopy. The ETA reactions were performed at 673 K under 0.1 MPa, and fluorinating HZ5 by an aqueous NH₄F solution of 0.17 M improved ethylene conversion, BTEX selectivity, and catalytic stability due to acidity, mesopore fraction, and crystallinity.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.907-914
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• 2004

The nitridation mechanism of Si by SHS at $Si-NaCl-NH_{4}Cl-NaN_3$ system was investigated in this work. It was revealed that NaCl as a diluent was helpful to the perfect nitridation reaction by retarding the growth of Si particle resulted from the melting of Si at the initial stage of the nitridation reaction. And $NH_{4}Cl\;and\;NaN_3$ formed NaCl through decomposition and combination, and the preheating of pellet was helpful to the nitridation reaction in this process. The main nitridation mechanism of this system was liquid-gas reaction. The optimum porosity of the pellet for the nitridation of ${\alpha}-Si_{3}N_4$ was $67-69\%$.

• Journal of the Korean Magnetics Society
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• v.26 no.4
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• pp.129-132
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• 2016

The effect of thermal-nitrification on L1o transfomation in nano-sized FePt particles was studied. As-synthesized FePt nanoparticles by thermal decomposition method have fcc structured phase and their Hc and Ms were 247.34 Oe and 27.308 emu/g, respectively. According to the XRD analysis, phase transformation from fcc (face centered cubic) to fct (face centered tetragonal) structure was revealed by heating under $NH_3+H_2$ mixed-gas atmosphere. Also a slight shift of each (111) peak indicated phase transformation from fcc to fct structure. Hc and Ms of fct FePtN were 1058.2 Oe and 32.718 emu/g, respectively. The nano-sized FePtN magnetic particles synthesized by thermal decomposition method and mixed-gas nitrification are expected for advanced applications such as high density magnetic recording media and biomedical materials.