• Applied Chemistry for Engineering
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• v.10 no.8
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• pp.1109-1113
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• 1999

sothemal reduction at $50^{\circ}C$ using $Pt/MoO_3$ or $Pt/MoO_3/SiO_2$ made by dry impregnation or physical mixture of $Pt^{\circ}$ and $MoO_3$ demonstrated that the $H_2$ uptake vis $H_2$ spillover from Pt into $MoO_3$ was enhanced as calcination temperature was increased. Surface area of exposed Pt crystallites measured by CO chemisorption was decreased with higher calcination temperature. In addition, TEM showed that $MoO_x$ overlayers were formed on Pt crystallites after calcination at $400^{\circ}C$. Consequentially, it was found that this increased active contact sites between Pt and $MoO_3$ due to surface morphological change was one of the dominant factors for this increased $H_2$uptake via $H_2$ spillover from Pt crystallites into $MoO_3$.

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.6
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• pp.524-531
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• 2015

To improve the electrochemical and mechanical characteristics, engineering plastic of the sulfonated polyether ether ketone (SPEEK) as polymer matrix was prepared in the sulfonation reaction of polyether ether ketone (PEEK). The SPEEK organic-inorganic blended composite membranes were prepared by sol-gel casting method. It was loaded with the highly dispersed ceria and cesium-substituted molybdosilicic acid (Cs-MoSiA) and 1,4-diiodobutane which was cross-linking agent contents of $10{\mu}L$. Cs-MoSiA was added to increase proton conductivity. Ceria ($CeO_2$) was used as a free radical scavenger which degrade the membrane in polymer electrolyte membrane water elctrolysis (PEMWE). In conclusion, CL-SPEEK/Cs-MoSiA/Ceria 1% composite membrane showed high proton conductivity 0.2104 S/cm at $25^{\circ}C$ which was better than Nafion 117 membrane.

• Korean Journal of Metals and Materials
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• v.48 no.8
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• pp.741-748
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• 2010

We studied the corrosion and oxidation properties of Fe-18Cr-0.4Nb-(0.1~0.6)Ti-(1~3)Si-(0.5~2)Mo stainless steel. The resistance to general and pitting corrosion was evaluated and the results were analyzed by Response Surface Methodology (RSM) as a function of alloy composition. The effects of alloy composition and heat treatment on the oxidation resistance were also examined. Mo increased both general corrosion resistance and pitting corrosion resistance. Si improved the resistance of the alloys to pitting corrosion. Si was also beneficial for general corrosion resistance of the alloys containing Mo at more than 1 wt.%. However, Mo was detrimental when its content was lower. Effects of Ti on general corrosion properties appeared to be weak and a high concentration of Ti appeared to deteriorate pitting resistance. The thickness of the oxidation scale increased and adhesion of the scale worsened as the temperature increased from $800^{\circ}C$ to $900^{\circ}C$. Weight gain of the alloys due to oxidation at $900^{\circ}C$ clearly showed that the resistance to oxidation is improved by annealing at $860^{\circ}C$ and an increase of Si content.

• Journal of the Korean Ceramic Society
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• v.35 no.4
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• pp.333-338
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• 1998

Mechanical properties of polycrystalline{{{{ {Ti }_{3 }{SiC}_{2 } }} were investigated. Hertzian indentation test using a spher-ical indenter was used to study elastic and plastic behavior in{{{{ {Ti }_{3 }{SiC}_{2 } }} A high ratio of hardness to elastic mo-dulus indicated that mechanical properties of{{{{ {Ti }_{3 }{SiC}_{2 } }} are somehow similar to those of metals. Indentation stress-strain curve deviated from an ideal elastic limit indicating exceptional plasticity in this material. De-formation zones were formed below the contact as well as around the contact area. Intragrain slip would ac-count for high plasticity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.557-563
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• 2003

SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.

• Bulletin of the Korean Chemical Society
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• v.24 no.6
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• pp.832-836
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• 2003

To extend the knowledge of triple bonding between group 6 transition metal and heavier group 14 elements, the structural and bonding aspects of ($η^5-C_5H_5$)$(CO)_2$M≡ER (M = Cr, Mo, W; E = Si, Ge, Sn, Pb) are investigated by hybrid density functional calculations at the B3PW91 level. Substituent effects are also investigated with R = H, Me, $SiH_3$, Ph, $C_6H_3-2,6-Ph_2$, $C_6H_3-2,6-(C_6H_2-2,4,6-Me_3)_2$, and $C_6H_3-2,6-(C_6H_2-2,4,6- iPr_3)_2$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.6
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• pp.558-561
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• 2004

The morphology of silica supported $MoO_{3}$ catalysts, which was prepared by impregnation of ammonium heptamolybdate(AHM) with various surface loadings up to 4 atoms $Mo/nm^{2}$, was studied using x-ray diffraction(XRD). All morphologies of silica supported $MoO_{3}$ appear to be thermodynamically driven. For high loaded catalysts there appeared three states: a sintered and well-dispersed hexagonal state at moderate temperature calcination($300^{\circ}C$), and a sintered orthorhombic state at high temperature calcination($500^{\circ}C$). Whereas the sintered orthorhombic phase is detected by XRD at loadings in excess of 1.1 atom $Mo/nm^{2}$, the well-dispersed hexagonal phase is not detected even until 4.0 $atomsMo/nm^{2}$. The higher apparent dispersion of the hexagonal phase may arise from some role of ammonia which results in a stronger $MoO_{3}-SiO_{2}$ surface interaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.121-124
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• 2012

The characteristics of Ga-doped zinc oxide (GZO) thin films deposited at different deposition temperatures (TS~250 to $550^{\circ}C$) on 4H-SiC have been investigated. Structural and electrical properties of GZO thin film on n-type 4H-SiC(0001) were investigated by using x-ray diffraction(XRD), atomic force microscopy(AFM), Hall effect measurement, barrier height from I-V curve and Auger electron spectroscopy(AES). XRD $2\theta$ scan shows GZO thin film has preferential orientation with c-axis perpendicular to SiC substrate surface. The lowest resistivity ($\sim1.9{\times}10^{-4}{\Omega}cm$) was observed for the GZO thin film deposited at $400^{\circ}C$. As deposition temperature increases, barrier height between GZO and SiC was increased. Whereas, resistivity of GZO thin films as well as barrier height between GZO and SiC were increased after annealing process in air atmosphere. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions and oxygen vacancy may affect the electrical properties of GZO films on SiC.

• Journal of IKEEE
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• v.28 no.1
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• pp.46-52
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• 2024

In this study, we investigated the electrical characteristics of SiC MOSFETs by depositing Si and oxidizing it to form the gate oxide layer. A thin Si layer was deposited approximately 20 nm thick on top of the SiC epi layer, followed by oxidation to form a gate oxide layer of around 55 nm. We compared devices with gate oxide layers produced by oxidizing SiC in terms of interface trap density, on-resistance, and field-effect mobility. The fabricated devices achieved improved interface trap density (~8.18 × 10¹¹ eV^-1cm^-2), field-effect mobility (27.7 cm²/V·s), and on-resistance (12.9 mΩ·cm²).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.126-126
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• 1999

본 실험의 목적은 FED의 상부, 하부 전극으로 사용되는 Mo를 건식, 습식 식각함으로써 DED 소자의 공정을 개발하는 것이다. Mo는 $261^{\circ}C$의 높은 융점을 지니고 있으며, 우수한 열적 안정성과 비교적 낮은 비저항을 가지는 재료로써 FED와 같은 전계 방출 소자의 cathod 팁 및 전극물질로 사용되어지는 가장 보편적인 물질이다. FED와 같은 전계방출소자가 갖추어야 할 요건은 전자 방출 영역이 소자 동작시 변형되지 않아야 하고, 기계적 ,화학적, 열적 내구성이 좋아야 함인데 이러한 요건을 충족시킬 수 있고 가장 범용적으로 사용되는 물질이 Mo이다. 실험에서 사용된 Mo는 DC magnetron sputter를 사용하여 Ar 가스를 첨가하여 5mTorr하에서 Si 기판위에 증착속도를 300$\AA$/min로 하여 1.6$\mu\textrm{m}$ 증착하였다. 본 실험의 Mo 식각은 고밀도 플라즈마원인 ICP를 이용하였다. 식각특성은 식각 가스조합, inductive power, bias voltage, 공정 압력의 다양한 공정 변수에 따른 식각특성 변화를 관찰하였다. 식각시 chlorine 가스를 주요 식각 가스로 사용하고 BCl3, O2, Ar을 첨가가스로 사용하였으며, inductive power는 300-600, bias voltage는 120-200V 사용하였고 압력은 15-30mTorr, 기판온도는 7$0^{\circ}C$로 유지하였으며 식각마스크로는 electron-beam evaporator로 1$\mu\textrm{m}$ 증착한 SiO2를 patterning하여 사용하였다. 식각속도는 stylus profiler를 이용하여 측정하였으며 식각후 profile은 scanning electron microscopy (SEM)을 통하여 관찰하였다. 실험 결과 순수한 Cl2 BCl3 가스만을 사용한 경우 보다는 Cl2 가스에 O2를 첨가하였을 때 좋은 선택비를 얻었다. 또한, inductive power와 bias voltage, Mo의 식각속도의 적절한 조절을 통해 SiO2에 대한 선택도를 변화시킬 수 있었다. Cl2:O2비를 1:1로 하고 400W/-150V, 20mTorr의 압력, 7$0^{\circ}C$ 기판온도에서 식각시 200$\AA$/min의 Mo 식각속도, SiO2와의 선택비 8:1을 얻을 수 있었다. 또한 실제 FED 소자 구조형성에 적용한 결과 비등방적인 식각형상을 형성할 수 있었다.