• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.187-192
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• 2003

The magnetic and thermal properties of NiFe/[IrMn-Mn]/CoFe with Mn additions have been studied. As-deposited CoFe pinned layers with [IrMn-Mn]layer had dominantly larger exchange biasing field ( $H_{ex}$) and blocking temperature ( $T_{b}$) than those with pure I $r_{22}$M $n_{78}$ used. The $H_{ex}$ and $T_{b}$ improved with 76.8-78.1 vol% Mn, but those of the NiFe/IrMn/CoFe dropped considerably with more addition of 0.6 vol % Mn. The average x-ray diffraction peak ratios of fcc [(111)CoFe, NiFe]/(111)IrM $n_3$ textures for the Mn inserted total vol of 75.5, 77.5, and 79.3% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between IrMn and CoFe layers was almost zero, but it increased to 100 Oe after annealing of 250 $^{\circ}C$. For as-grown two multilayers samples with ultra-thin Mn layers of 77.5 and 78.7 vol %, the $H_{ex}$s were 259 and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was increased up to 475 Oe at 350 $^{\circ}C$ but decreased to 200 Oe at 450 $^{\circ}C$, respectively. The magnetic properties and thermal stabilities of NiFe/[IrMn-Mn]/CoFe multilayer were enhanced with Mn additions. In applications where higher $H_{ex}$ and $T_{b}$ are required, proper contents of Mn can be used. be used. used.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.10-16
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• 2010

In this paper, synthesis here Mn add to Ar injection the state and a vacuum an atomosphere $ZnGa_2O_4$ : Mn, ZnO and $Ga_2O_3$ power of 1 : 1 mole ratio mixture. Manufacture a close examination of oxygen a component variation luminescence a specific character reach an in fluence of $ZnGa_2O_4$ : Mn, luminescence spectrum observation also an explanation of Mn site symmetry and at luminescence spectrum reach an influence from low temperature photoluminescence spectrum.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.488-494
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• 1988

Effects of MnO2 addition on themicrostructure, dielectric and piezoelectric properties of Rhombohedral, Tetragonal and Morphotropic phase boundary(MPB) in Pb(Ni1/3Nb2/3)O3-PbTiO3-PbZrO3 system were investigated and respectively the amount of MnO2 addition was 0, 0.2, 0.5, 1.0, 3.0wt%. In the tetragonal region, compared with the Rhombohedral and Morpotropic phase boundary, Mechanical quality factor(Qm), Curie temperature(Tc) and Dissipation factor were promoted by addition of MnO2. According to the results of the microstructure, dielectric and piezoelectric properties, the solid solution range of MnO2 addition in this system was 0.2-0.5wt%.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2529-2534
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• 2012

Poly(3,4-ethylenedioxythiophene) coated Manganese Dioxide (PEDOT/$MnO_2$) composite electrode was fabricated by simply immersing the $MnO_2$ electrode in an acidic aqueous solution containing 3,4-ethylenedioxythiophene (EDOT) monomers. Analysis of open-circuit potential of the $MnO_2$ electrode in the solution indicates the reduction of outer surface of $MnO_2$ to dissolved $Mn^{2+}$ ions and simultaneously oxidation of EDOT monomer to PEDOT on the $MnO_2$ surface to form a PEDOT shell via a galvanic displacement reaction. Analysis of cyclic voltammograms and specific capacitance of the PEDOT/$MnO_2$, conductive carbon added $MnO_2$ and conductive carbon added PEDOT/$MnO_2$ electrodes suggests that the conductive carbon acted mainly to provide a continuous conducting path in the electrode to improve the rate capability and the PEDOT layer on $MnO_2$ acts to increase the active reaction site of $MnO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.171-172
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• 2005

PSNZT계 압전 세라믹스는 압전 특성을 개량하고, 여러 가지 응용 분야의 요구를 만족할 특성을 얻기 위해 Mn을 포함하는 첨가물에 관한 연구를 하였다. Mn을 포함하는 산화물은 기계적 품질계수($Q_m$)를 높이는 강화제로 널리 활용되고 있으며, $Mn^{4+}$를 갖는 $MnO_2$가 가장 많이 사용되고 있다. 산화물에서 Mn 전자가는 여러 상태 인데, 이런 전자가의 변화가 압전 특성에 미치는 영향을 조사하였다. Mn 전자가에 따라서 소결체의 미세구조는 $MnCO_3$와 $Mn_3O_4$경우 입자크기가 10${\mu}m$정도였으며, $Mn_2O_3$와 $MnO_2$의 입자크기는 $1\sim5{\mu}m$정도로 불규칙하였다. 전반적으로 소결체는 밀도가 $7.75g/cm^2$이상이었고, 치밀하였다. $MnCO_3$경우 전기기계 결합계수는 56%이고, $MnO_2$경우 기계적 품질계수는 2000이상이었다.

• Applied Chemistry for Engineering
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• v.23 no.2
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• pp.190-194
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• 2012

10 wt% Mn supported on various commercial $TiO_2$ catalysts were prepared by wet-impregnation method for the low temperature selective catalytic reduction (SCR) of NO with $NH_3$. A combination of various physico-chemical techniques such as BET, XRD, XPS and TPR were used to characterize these catalysts. MnOx surface densities on MnOx/$TiO_2$ catalyst were related to surface area. As MnOx surface density lowered with high dispersion, the SCR activity for low temperature was increased and the reduction temperature ($MnO_2$ ${\rightarrow}$ $Mn_2O_3$) of surface MnOx was lower. For a high SCR, MnOx could be supported on a high surface area of $TiO_2$ and should be existed a high dispersion of non-crystalline species.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.135-135
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• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.376-380
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• 2017

In this paper, we prepared a metal alloy resistor with stable thermal electro motive force (thermal EMF) as well as a low temperature coefficient of resistance (TCR) by adjusting the manganese proportion from 3 to 12 wt% in the Cu-Mn-Ni alloy. Composition of the fabricated metal alloy was investigated using energy dispersive X-ray (EDX) analysis. The TCR of each sample was measured as 44.56, 40.54, 35.60, and 31.56 ppm for Cu-3Mn-2Ni, Cu-5Mn-2Ni, Cu-10Mn-2Ni, and Cu-12Mn-2Ni, respectively. All the resistor samples were available for the F grade (${\pm}1%$ of the allowable error of resistance) high-precision resistor. All the samples satisfied the baseline of high thermal EMF (under 3 mV at $60^{\circ}C$); however, Cu-3Mn-2Ni and Cu-5Mn-2Ni satisfied the baseline of low thermal EMF (under 0.3 mV at $25^{\circ}C$). We were thus able to design and fabricate the metal alloy resistor of Cu-3Mn-2Ni and Cu-5Mn-2Ni to have low TCR and stable thermal EMF at the same time.

• Bulletin of the Korean Chemical Society
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• v.15 no.12
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• pp.1058-1064
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• 1994

Mn/In$_2O_3$ systems with a variety of Mn mol${\%}$ were prepared to investigate the effect of Mn-addition on the catalytic activity of Mn/In$_2O_3$ in the oxidative coupling of methane. The oxidative coupling of methane was examined on pure In$_2O_3$ and Mn/In$_2O_3$ catalysts by cofeeding gaseous methane and oxygen under atmospheric pressure between 650 and 830 $^{\circ}C$. Although pure In$_2O_3$ showed no C$_2$ selectivity, both the C$_2$ yield and the C$_2$ selectivity were increased by Mn-doping. The 5.1 mol${\%}$ Mn-doped In$_2O_3$ catalyst showed the best C$_2$ yield of 2.6${\%}$ with a selectivity of 19.1${\%}$. The electrical conductivities of pure and Mn-doped In$_2O_3$ systems were measured in the temperature range of 25 to 100 $^{\circ}C$ at PO$_2$'S of 1 ${\times}$ 10$^{-7}$ to 1 ${\times}$ 10 $^{-1}$ atm. The electrical conductivities were decreased with increasing Mn mol${\%}$ and PO$_2$, indicating the specimens to be n-type semiconductors. Electrons serve as the carriers and manganese can act as an electron acceptor in the specimens. Manganese ions doped in In$_2O_3$ inhibit the ionization of neutral interstitial indium or the transfer of lattice indium to interstitial sites and increase the formation of oxygen vacancy, giving rise to the increase of the concentration of active oxygen ion on the surface. It is suggested that the active oxygen species adsorbed on oxygen vacancies are responsible for the activation of methane.

• Journal of the Korean Electrochemical Society
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• v.14 no.3
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• pp.131-137
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• 2011

A simple and rapid electrochemical method for the quantitative analysis of $Mn^{2+}$ ion is demonstrated with a view to examine the $Mn^{2+}$ dissolution behavior of $LiMn_2O_4$. The method described herein is based on the oxidation reaction of $Mn^{2+}$ to $Mn^{4+}(MnO_2)$ in aqueous buffer solution. Under the optimum condition (pH 8.9 0.04 M $NH_3-NH_4Cl$ buffer solution and glassy carbon working electrode), the linear range of $5{\mu}M-100{\mu}M$ (0.275-5.5 ppm) [$Mn^{2+}$] is obtained for the Linear sweep voltammetry(LSV) and $0.2{\mu}M-10{\mu}M$ (0.011-0.55 ppm) [$Mn^{2+}$] for the differential pulse voltammetry (DPV), respectively. It is also noted that the oxidation reaction of $Mn^{2+}$ ion is reduced with increasing amount of the electrolyte ($LiPF_6$, EC, EMC) added to the measuring solution, which is found to be mainly due to $LiPF_6$ and EC rather than EMC.