• Title/Summary/Keyword: $Mg_2Si$

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Mechanical Properties and Fabrication of Nanostructured Mg2SiO4-MgAl2O4 Composites by High-Frequency Induction Heated Combustion (기계적 활성화된 분말로부터 고주파유도 가열 연소합성에 의한 나노구조 Mg2SiO4-MgAl2O4 복합재료 제조 및 기계적 특성)

  • Shon, In-Jin;Kang, Hyun-Su;Hong, Kyung-Tae;Doh, Jung-Mann;Yoon, Jin-Kook
    • Korean Journal of Metals and Materials
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    • v.49 no.8
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    • pp.614-618
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    • 2011
  • Nanopowders of MgO, $Al_2O_3$ and $SiO_2$ were made by high energy ball milling. The rapid sintering of nanostructured $MgAl_2O_4-Mg_2SiO_4$ composites was investigated by a high-frequency induction heating sintering process. The advantage of this process is that it allows very quick densification to near theoretical density and inhibition of grain growth. Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties. As nanomaterials possess high strength, high hardness, excellent ductility and toughness, undoubtedly, more attention has been paid for the application of nanomaterials. Highly dense nanostructured $MgAl_2O_4-Mg_2SiO_4$ composites were produced with simultaneous application of 80MPa pressure and induced output current of total power capacity (15 kW) within 2min. The sintering behavior, gain size and mechanical properties of $MgAl_2O_4-Mg_2SiO_4$ composites were investigated.

Effect of Fe and Mn Contents on the Tensile Property of Al-9%Si-0.3%Mg Alloy for High Pressure Die Casting (고압 금형주조용 Al-9%Si-0.3%Mg 합금의 Fe, Mn 함량이 인장특성에 미치는 영향)

  • Kim, Heon-Joo
    • Journal of Korea Foundry Society
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    • v.31 no.1
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    • pp.18-25
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    • 2011
  • Effect of Fe and Mn contents on the tensile properties has been studied in Al-9wt%Si-0.3wt%Mg alloy. As Fe content of Al-9wt%Si-0.3wt%Mg-0.5wt%Mn alloy increased from 0.15wt% to 0.45wt%, tensile strength of as-cast alloy decreased from 192 MPa to 174 MPa, and elongation of the alloy also decreased from 4.8% to 4.2%. Decrease of these properties can be explained as the formation of plate shape, ${\beta}-Al_5FeSi$ phase with high Fe/Mn ratio of the alloy. However when Mn content of Al-9wt%Si-0.3wt%Mg-0.45wt%Fe alloy increased from 0.3wt% to 0.5wt%, tensile strength of T6 aged alloy increased from 265 MPa to 275 MPa, and elongation of the alloy increased from 2.3% to 3.6%. These improvements attribute to chinese script, ${\alpha}-Al_{15}(Mn,Fe)_3Si_2$ phase shape-modified from ${\beta}-Al_5FeSi$ phase with low Fe/Mn ratio of the alloy.

A Study on the Retarding effects of Cememtn Mortar Setting (시멘트 모르타르의 응결 지연 효과에 관한 연구)

  • 이재한;이경희;김홍기
    • Journal of the Korean Ceramic Society
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    • v.33 no.3
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    • pp.307-312
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    • 1996
  • In following addition of 0.3, -0.6, 0.8, 1.0 and 5 weight percent MgSiF66H2O studies have been made of the setting and hardening characteristics of ordinary portland cement. MgSiF66H2O retarded the setting time of ordinary portland cement and extended the induction pariod of the hydration. In ordinary portland cement the setting characteristics were drastically altered especially at high MgSiF66H2O contents. Evidence was also obtained by the formation of a KSiF6 which was very fine particle. The results wee as follows. 1. Slump was slightly decreased when MgSiF66H2O added. 2. Setting time was retarded depending on the amount of retarding agent 2 to 8 hours 3. Compressive strength was almost same or some increased in comparision with opc. 4. When MgSiF66H2O was added to cement paste K2SiF6 were formed It was fine-sized distributed uniformly in cement grain and caused retardation of cement setting.

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Synthesis and characterization of Mg-Si thermoelectric compound subjected to mechanical alloying (기계적 합금화에 의한 Mg-Si계 열전화합물의 합성 및 평가)

  • Lee, Chung-Hyo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.3
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    • pp.121-127
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    • 2007
  • We have applied mechanical alloying (MA) to get $Mg_2Si$ thermoelectric material with nano-sized grains. An optimal milling and heat treatment conditions to obtain the single phase of $Mg_2Si$ compound with fine microstructure were investigated by X-ray diffraction and differential scanning calorimetry (DSC) measurement. The $Mg_{66.7}Si_{33.3}$ MA samples ball-milled for $20{\sim}180\;hrs$ exhibit two broad exothermic heat releases around $220^{\circ}C$ and $570^{\circ}C$. On the other hand, MA sample ball-milled far 260 hrs exhibits only a sharp exothermic peak at $230^{\circ}C$ Single phase Mg2Si powder can be obtained by MA of $Mg_{66.7}Si_{33.3}$ mixture for 60 hours and subsequently heated up to $620^{\circ}C$. Sintering of the MA powders was performed in a spark plasma sintering (SPS) machine using graphite dies at $800{\sim}900^{\circ}C$ under 50 MPa. The shrinkage of sintering sample during SPS was significant at about $200^{\circ}C$. All compact bodies have a high relative density above 94% with metallic glare on the surface.

A possibility of enhancing Jc in MgB2 film grown on metallic hastelloy tape with the use of SiC buffer layer

  • Putri, W.B.K.;Kang, B.;Ranot, M.;Lee, J.H.;Kang, W.N.
    • Progress in Superconductivity and Cryogenics
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    • v.16 no.2
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    • pp.20-23
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    • 2014
  • We have grown $MgB_2$ on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and $600^{\circ}C$ by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, $MgB_2$ films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the $MgB_2$ films on SiC/Hastelloy deposited at 500 and $600^{\circ}C$. From the surface analysis, smaller and denser grains of $MgB_2$ tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of $MgB_2$ tapes.

The Study of Mg/Si(111)system using LEED and SRPES (LEED, SRPES를 이용한 Mg/Si(111)계의 연구)

  • 안기석;박래준;김정선;박종윤;이순보
    • Journal of the Korean Vacuum Society
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    • v.3 no.3
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    • pp.275-279
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    • 1994
  • Low Energy Electron Diffraction(LEED)와 Synchrotron Radiation Photoelectron Spe-ctroscopy (SRPES)를 이용하여 $Si(111)7{\times}7$ 표면위에 Mg의 흡착에 의한 초기계면과 실리사이드의 형성에 대하여 연구하였다. 기판온도를 상온으로 유지하는 경우 증착량의 증가에 따라 LEED pattern은 diffuse 7${\times}$7 diffuse 1${\times}$1, $2/3sqrt{3}{\times}2/3sqrt{3} R30^{\cdot}$ 구조로 변화하였다. $300^{\cdot}C$의 기판온도에서 관측되는 1${\times}$1 구조에 대한 surface sensitive Si 2p core level spectrum의 fitting 결과로부터 이 1${\times}$1구조는 적층성장한 Mg2Si 박막에 의한 구조임을 알수 있다. 그러나 이 1${\times}$1구조를 가진 Mg2Si 박막이 성장하지 못함을 예상할 수 있다. 그결과 Mg의 계속된 증착에도 불구하고 비정질의 Mgqkr막이 성장하였다.

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Superconducting properties of SiC-buffered-MgB2 tapes

  • Putri, W.B.K.;Kang, B.;Duong, P.V.;Kang, W.N.
    • Progress in Superconductivity and Cryogenics
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    • v.17 no.3
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    • pp.1-4
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    • 2015
  • Production of $MgB_2$ film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of $MgB_2$-Hastelloy and the slightly increased $T_c$ of $MgB_2$ tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when $MgB_2$ tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in $MgB_2$ tape in affecting the superconducting properties is considerably important for practical applications.

Luminescence Characteristics of Sr3MgSi2O8:Eu Blue Phosphor for Light Emitting Diodes (LED용 Sr3MgSi2O8:Eu청색 형광체의 발광특성)

  • 최경재;박정규;김경남;김창해;김호건
    • Journal of the Korean Ceramic Society
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    • v.41 no.8
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    • pp.573-577
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    • 2004
  • We have synthesized a Eu$^{2+}$-activated Sr$_3$MgSi$_2$ $O_{8}$ blue phosphor and investigated an attempt to develop blue LEDs by combining it with a InGaN blue LED chip (Len=405 nm). The InGaN-based Sr$_3$MgSi$_2$ $O_{8}$:Eu LED Lamp shows two bands at 405 nm and 460 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the Sr$_3$MgSi$_2$ $O_{8}$:Eu phosphor. The 460 m emission band is ascribed to a radiative recombination of Eu$^{2+}$ impurity ions in the Sr$_3$MgSi$_2$ $O_{8}$ host matrix. As a consequence of a preparation of W blue LED Lamp using the Sr$_3$MgSi$_2$ $O_{8}$:Eu blue phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/blue phosphor(1/0,202). At this time, the CIE chromaticity was x=0.1417 and y=0.0683.

Bi-materials of Al-Mg Alloy Reinforced with/without SiC and Al2O3 Particles; Processing and Mechanical Properties

  • Chang, Si-Young;Cho, Han-Gyoung;Kim, Yang-Do
    • Journal of Powder Materials
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    • v.14 no.6
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    • pp.354-361
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    • 2007
  • The bi-materials with Al-Mg alloy and its composites reinforced with SiC and $Al_2O_3$ particles were prepared by conventional powder metallurgy method. The A1-5 wt%Mg and composite mixtures were compacted under $150{\sim}450\;MPa$, and then the mixtures compacted under 400 MPa were sintered at $773{\sim}1173K$ for 5h. The obtained bi-materials with Al-Mg/SiCp composite showed the higher relative density than those with $Al-Mg/Al_2O_3$ composite after compaction and sintering. Based on the results, the bi-materials compacted under 400 MPa and sintered at 873K for 5h were used for mechanical tests. In the composite side of bi-materials, the SiC particles were densely distributed compared to the $Al_2O_3$ particles. The bi-materials with Al-Mg/SiC composite showed the higher micro-hardness than those with $Al-Mg/Al_2O_3$ composite. The mechanical properties were evaluated by the compressive test. The bi-materials revealed almost the same value of 0.2% proof stress with Al-Mg alloy. Their compressive strength was lower than that of Al-Mg alloy. Moreover, impact absorbed energy of bi-materials was smaller than that of composite. However, the bi-materials with Al-Mg/SiCp composite particularly showed almost similar impact absorbed energy to $Al-Mg/Al_2O_3$ composite. From the observation of microstructure, it was deduced that the bi-materials was preferentially fractured through micro-interface between matrix and composite in the vicinity of macro-interface.

Effect of Heat Treatment on Microstructure and Mechanical Properties of Al-Zn-Mg-Cu-Si Sintered Alloys with and Without High-energy Ball Milling (Al-Zn-Mg-Cu-Si 소결합금의 미세조직과 기계적 특성에 미치는 열처리의 영향)

  • Junho Lee;Seonghyun Park;Sang-Hwa Lee;Seung Bae Son;Seok-Jae Lee;Jae-Gil Jung
    • Journal of Powder Materials
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    • v.30 no.6
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    • pp.470-477
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    • 2023
  • The effects of annealing on the microstructure and mechanical properties of Al-Zn-Mg-Cu-Si alloys fabricated by high-energy ball milling (HEBM) and spark plasma sintering (SPS) were investigated. The HEBM-free sintered alloy primarily contained Mg2Si, Q-AlCuMgSi, and Si phases. Meanwhile, the HEBM-sintered alloy contains Mg-free Si and θ-Al2Cu phases due to the formation of MgO, which causes Mg depletion in the Al matrix. Annealing without and with HEBM at 500℃ causes partial dissolution and coarsening of the Q-AlCuMgSi and Mg2Si phases in the alloy and dissolution of the θ-Al2Cu phase in the alloy, respectively. In both alloys, a thermally stable α-AlFeSi phase was formed after long-term heat treatment. The grain size of the sintered alloys with and without HEBM increased from 0.5 to 1.0 ㎛ and from 2.9 to 6.3 ㎛, respectively. The hardness of the sintered alloy increases after annealing for 1 h but decreases significantly after 24 h of annealing. Extending the annealing time to 168 h improved the hardness of the alloy without HEBM but had little effect on the alloy with HEBM. The relationship between the microstructural factors and the hardness of the sintered and annealed alloys is discussed.