• 제목/요약/키워드: $J_c$ (B)

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A Review of SiC Static Induction Transistor (SIT) Development for High-Frequency Power Amplifiers

  • Sung, Y.M.;Casady, J.B.;Dufrene, J.B.
    • KIEE International Transactions on Electrophysics and Applications
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    • 제11C권4호
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    • pp.99-106
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    • 2001

  • An overview of Silicon Carbide (SiC) Static Induction Transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additionally, the impact of velocity saturation and temperature effects on SCLC are reviewed. The small-signal model, breakdown voltage, power density, and different gate structures are also discussed, before a final review of published SiC SIT results. Published S-band (3-4 GHz) results include 9.5 dB of gain and output power of 120 W, and L-band (1.3 GHz) results include 400 W output power, 7.7 dB of gain, and power density of 16.7 W/cm.

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THE STABILITY OF LINEAR MAPPINGS IN BANACH MODULES ASSOCIATED WITH A GENERALIZED JENSEN MAPPING

  • Lee, Sung Jin
    • 충청수학회지
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    • 제24권2호
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    • pp.287-301
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    • 2011

  • Let X and Y be vector spaces. It is shown that a mapping $f\;:\;X{\rightarrow}Y$ satisfies the functional equation $$(\ddag)\hspace{50}dk\;f\left(\frac{\sum_{j=1}^{dk}x_j}{dk}\right)=\displaystyle\sum_{j=1}^{dk}f(x_j)$$ if and only if the mapping $f$ : X ${\rightarrow}$ Y is Cauchy additive, and prove the Cauchy-Rassias stability of the functional equation ($\ddag$) in Banach modules over a unital $C^{\ast}$-algebra. Let $\mathcal{A}$ and $\mathcal{B}$ be unital $C^{\ast}$-algebras. As an application, we show that every almost homomorphism $h\;:\;\mathcal{A}{\rightarrow}\mathcal{B}$ of $\mathcal{A}$ into $\mathcal{B}$ is a homomorphism when $h((k-1)^nuy)=h((k-1)^nu)h(y)$ for all unitaries $u{\in}\mathcal{A}$, all $y{\in}\mathcal{A}$, and $n$ = 0,1,2,$\cdots$. Moreover, we prove the Cauchy-Rassias stability of homomorphisms in $C^{\ast}$-algebras.

  • https://doi.org/10.14403/jcms.2011.24.2.14 인용 PDF KSCI

Effect of Die-upset Process on Magnetic Properties and Deformation Behavior of Nanostructured Nd-Fe-B Magnets

  • Zhao, R.;Zhang, W.C.;Li, J.J.;Wang, H.J.;Zhu, M.G.;Li, W.
    • Journal of Magnetics
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    • 제16권3호
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    • pp.294-299
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    • 2011

  • Nd-Fe-B high performance magnets were prepared by die-upset forging. The effects of the deformation parameters on magnetic properties and flow stress were studied. Deformation temperatures in the range of $600{\sim}900^{\circ}C$ enable to achieve an effective anisotropy and temperature $800^{\circ}C$ proves to be suitable for deformation of Nd-Fe-B magnets. The amount of c-axis alignment along the press direction seems to depend on the amount of deformation and a saturation behavior is shown at deformation ratio of 75%. Magnetic properties are also related to strain rate, and maximum energy product is attained at an optimum strain rate of ${\varphi}=1{\times}10^{-2}s^{-1}$. By analyzing the relationship of stress and strain at different deformation temperature during die-upset forging process, deformation behavior of Nd-Fe-B magnets was studied and parameters for describing plastic deformation were obtained. Nd-rich boundary liquid phase, which is additionally decreasing the flow stress during deformation, is supposed to play the role of diffusion path and enhance the diffusion rate.

  • https://doi.org/10.4283/JMAG.2011.16.3.294 인용 PDF KSCI

Core Technology for Prominent COT (Color Filter On TFT Array) Structure

  • Kim, D.G.;Park, S.R.;Kim, S.J.;Park, J.J.;Seo, C.R.;Chung, I.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.393-394
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    • 2004

  • To get rid of cell assembly margin and have more process room of upper substrate, we developed truly COT (Color Filter On TFF Array) LCDs in that B/M (Black Matrix) as well as C/F (Color Filter) layer is located on TFT substrate. Novel B/M material is also developed for this COT structure. Difficulty in making contact hole through C/F layer was solved by making each C/F pattern isolated from others. We think this configuration will be core technology for prominent COT LCDs.

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