• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2273-2279
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• 2012

This research is based on fabricating Cu(In,Ga)$Se_2$ thin-film by co-evaporation method. On $1^{st}$ - stage, $In_2Se_3$ phase appeared when the substrate temperature reached to $400^{\circ}C$, however, there was small effect between the substrate temperature and absorbency spectrum on $2^{nd}$, $3^{rd}$ - stage because the average thickness of the thin-film was $1{\mu}m$ or higher. SEM and XRD was measured on $2^{nd}$ and $3^{rd}$ stage and it showed as the substrate temperature increases, the density of the crystal structure increased with the decreament of the vacancy. Furthermore, the formation of Cu(In0.7Ga0.3)$Se_2$ phase showed at $480^{\circ}C$ and $500^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.136-141
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• 2012

We report investigation of structural and optical characteristics of $In_2Se_3$ thin films fabricated by thermal annealing process. Indium (In) is deposited on substrates by sputtering methods and $In_2Se_3$ thin films are fabricated by thermal annealing it with selenium vapor. The annealing temperature was changed from $150^{\circ}C$ to $400^{\circ}C$. We observe formation and phase changes of $In_2Se_3$ thin films with increase of annealing temperature. Conglomeration of In is observed at low annealing temperature (${\leq}150^{\circ}C$). $In_2Se_3$ phases are started to form at $200^{\circ}C$ and ${\gamma}-In_2Se_3$ phase form at $350^{\circ}C$. High-quality ${\gamma}-In_2Se_3$ thin film with wurtzite structure is obtained at $400^{\circ}C$ of annealing temperature. Furthermore, we confirm that band gaps of $In_2Se_3$ thin films are increased according to increase of annealing temperature. Optical band gap of high-quality ${\gamma}-In_2Se_3$ is found to be 1.796eV.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.1-98.1
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• 2010

본 실험에서는 $CuInSe_2$ 3원물질을 화학량론적 조성비가 되도록 박막을 제조하기 위해 각 단위원소를 원자비에 맞춰 전자선가열 진공증착기를 사용하여 Cu, In, Se 순으로 증착하였다. $90^{\circ}C$이하의 온도에서 $CuIn_2$, In상이 주를 이루며, $100^{\circ}C$이상에서는 $Cu_{11}In_9$상이 나타나기 시작하고 In상이 증가하였다. $10^{-3}torr$이상의 진공석영관에서 열처리와 동시에 Selenization을 통해 제작된 $CuInSe_2$박막은 열처리온도 $250^{\circ}C$에서는 CuxSe, CuSe등의 2차상들이 나타나다가 $450^{\circ}C$이상의 고온에서 $CuInSe_2$ 단일상을 형성하였다. 이로부터 진공중에서 반응을 시켰을 때, 더 낮은 온도에서 반응이 일어나고 열역학적으로 보다 안정한 소수의 화합물들이 쉽게 형성됨을 확인할 수 있었다. 특히 $250^{\circ}C$에서는 Sphalerite 구조를 가지다가 $350^{\circ}C$이상의 온도에서 Selenization하였을 때 Chalcopyrite 구조를 가졌다. 박막이 두꺼워지면서 결정립의 크기가 커지고 응력이 작아지는 특성을 보였다. 에너지 밴드갭은($E_g$)은 Cu/In 성분비율이 클수록 작은값을 보였으며, 결절립크기가 증대되므로 결국 흡수계수가 낮아짐을 알 수 있다. 또한 두께가 증가할수록 전반적으로 흡수계수가 증가하였고 Cu/In의 성분비율이 0.97일 때 기초흡수파장은 1,169nm이고 에너지밴드갭은 1.06eV이었으며, 두께 $1.5{\mu}m$이상일 때 전반적으로 양호한 상태의 p-type $CuInSe_2$박막을 제작하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.46.2-46.2
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• 2011

CuInSe2 (CIS)계 화합물은 3족 원소(Ga, Al) 또는 6족 원소(S)를 첨가하여 밴드갭 조절이 가능하다는 장점을 가지고 있다. 실제로 동시 증발법으로 Ga을 첨가하여 만든 CuIn0.7Ga0.3Se2(CIGS) 태양전지는 약20%의 높은 효율 보이고 있다. 그러나 최고 효율을 달성한 동시 증발법은 대면적화가 어렵다는 점이 상용화의 걸림돌로 작용하고 있다. 따라서, 그 대안으로 대면적화가 용이한 스퍼터링 및 셀렌화 공정 연구가 진행되고 있다. 그러나 스퍼터링/셀렌화 공정은 Cu-In-Ga 금속 전구체의 셀렌화 시 Ga이 Mo쪽으로 이동하여 CIS/CGS 2개의 상으로 형성된다는 큰 단점을 갖고 있다. 이를 해결하기 위해 셀렌화 후 다시 H2S 기체 분위기에서 열처리하여 표면 밴드갭을 증가시키는 공정이 사용되고 있으나, 이는 열처리 과정이 2번 필요하다는 단점을 갖고 있다. 이러한 단점을 해결하고자 본 연구에서는 금속 전구체의 구조, 셀렌화 공정 조건 및 전구체 내의 상(phase) 조절을 통해 셀렌화 시 Ga segregation을 억제하고자 하였다. 특히 전구체의 상 조절을 통해서 Ga의 이동을 크게 완화시킬 수 있음을 확인하였다.

• Bulletin of the Korea Photovoltaic Society
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• v.9 no.2
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• pp.18-28
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• 2023

지구상에 풍부하며 저독성 소재인 안티모니 셀레나이드(Sb₂Se₃)는 재료가 갖는 우수한 광전자적 특성과 장기 내구성으로 차세대 태양전지 소자로 크게 주목 받고 있다. 또한, 비교적 짧은 연구기간 동안 빠른 성장 속도를 보여줬으며, 2014년 2.26%에서 8년의 연구기간 동안 약 5배인 2022년 10.57%를 달성하였다. 하지만, 여전히 기존의 칼코지나이드계 박막 태양전지인 CdTe(22.1%) 및 Cu(In,Ga)Se₂(23.35%)가 달성한 효율에 비해 낮은 변환 효율을 보이고 있으며, 이는 계면에서 발생하는 캐리어 재결합으로 인한 개방전압 손실 문제가 주 원인으로 대두되고 있다. 따라서, Sb₂Se₃ 광 흡수층에 인접한 전자 및 정공 수송층 사이에 적절한 밴드 정렬을 구축하여 캐리어 재결합 손실을 줄이는 것이 고효율 Sb₂Se₃ 태양전지를 구현하기 위한 핵심 전략 중 하나이다. 본 원고에서는 Sb₂Se₃ 광 흡수층의 기본적인 특성과 Sb₂Se₃ 태양전지의 최근 연구 성과에 대해 간략하게 설명하고자 하며, 특히 전자 및 정공 수송층 적용을 통한 에너지 밴드 정렬 최적화에 관련된 내용을 중점적으로 소개하고자 한다. 또한, Sb₂Se₃ 박막 태양전지 성능의 병목 현상을 극복하기 위한 잠재적인 연구 방향에 대해서도 논하고자 한다.

• Korean Journal of Environmental Agriculture
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• v.37 no.2
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• pp.146-149
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• 2018

BACKGROUND: Selenium is an essential element for all life forms but can be toxic above certain narrow levels. Prevalent forms of selenium in oxic environment are selenium oxyanions such as selenite and selenate, which may be contaminants in soils and water bodies. Bacterial reduction of more mobile selenium species (selenite or selenate) to less mobile elemental selenium may suggest a benign solution for alleviating toxicity and bioavailability of the selenium species. METHODS AND RESULTS: A facultative anaerobic bacterium, Citrobacter strain SE4-1 was isolated from the contaminated stream sediments and found to effectively reduce selenite to elemental selenium. Aqueous phase of selenite was analyzed by inductively couple plasma spectroscopy and the precipitated sphere-shaped elemental selenium was observed by transmission electron microscopy. CONCLUSION: The bacterial strain SE4-1 isolated in this study suggests a potential role in biogeochemical cycle of selenium by the selenite reduction in the stream environment, and potentials for biotechnological applications to reduceselenium concentrations in selenium-contaminated systems such as wastewater, soil, and groundwater.

• Journal of the Korean Electrochemical Society
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• v.14 no.3
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• pp.145-151
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• 2011

ZnSe, as a II-VI compound semiconductor which has a wide band gap in the visible region is applicable to the various fields such as laser diode, display and solar cell. By using the electrochemical deposition method, ZnSe thin film was synthesized on the ITO glass substrate. The synthesis of ZnSe grains and their structure having zinc blende shape were verified through the analysis of XRD and SEM. UV spectrophotometric method determined the band gap as the value of 2.76 eV. Applying the DFT (Density Functional Theory) in the molecular dynamics, the band structure of ZnSe grains was analyzed. For ZnSe grains with zinc blende structure, the band structure and its density of state were simulated using LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), and B3LYP (Becke, 3-parameter, Lee-Yang-Parr) functionals. Among the calculations of energy band gap upon each functional, the simulated one of 2.65 eV based on the B3LYP functional was mostly near by the experimental measurement.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.988-996
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• 1995

CuInSe$_2$this films as a light absorber layer were fabricated by vacuum evaporation using In$_2$Se$_3$and Cu$_2$Se precursors and their properties were analyzed. Indium selenide films of 0.5${\mu}{\textrm}{m}$ thickness were first deposited by vacuum evaporation of In$_2$Se$_3$ on a Corning 7059 glass substrate. The films deposited at suscepor temperature of 40$0^{\circ}C$ showed a flat surface morphology with densely Packed grain structure. CuInSe$_2$films directly formed by evaporating Cu$_2$Se on the predeposited In$_2$Se$_2$films also showed a very flat surface when the susceptor temperature was $700^{\circ}C$. Cu$_2$Se, a second phase in the CuInSe$_2$film, was removed by evaporating additional In$_2$Se$_3$on the CuInSe$_2$film at $700^{\circ}C$. The grain size of 1.2${\mu}{\textrm}{m}$ thick CuInSe$_2$, film was about 2${\mu}{\textrm}{m}$ and the film had a (112) preferred orientation. As the amount of deposited In$_2$Se$_3$increased, the electrical resistivity of CuInSe$_2$films increased because of the decrease of hole concentration. But the optical band gap was almost constant at the value of 1.04eV, The CuInSe$_2$film grown on a Mo/glass substrate had a similar smooth microstructure compared to that on a glass substrate. A solar cell with ZnO/CdS/CuInSe$_2$/Mo structure may be realized based on the above CuInSe$_2$films.

• Journal of radiological science and technology
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• v.28 no.1
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• pp.25-32
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• 2005

Purpose : To evaluate the degree of the artifact which is caused by the mascara and the eye shadow when acquiring MR images and compare the difference of the image distortion according to the change of various pulse sequence. Material and Method : The popular domestic mascara and eye shadow products were selected from three different companies respectively and divided into two groups mascara (M1, M2, M3 ), eye shadow (E1, E2, E3). Self-designed quadrature type saddle coil which has 4 cm inside diameter, 8 cm length and which is for both Tx and Rx was used. MR image was acquired respectively after applying the mascara to the tape from study 1, the eye shadow to the tape from study 2 and adding the eye shadow to the mascara from study 3. The FSE(fast spin echo), the SE(spin echo), the GE(gradient echo) were used as pulse sequences. The degree of the image distortion which was measured from each sequence was analyzed in quality and quantity. Result : The mascara and the eye shadow caused the artifacts to the MR images partially and induced the image distortion. There was a little difference in terms of the degree of artifact according to the change of pulse sequence. From the study 3 in which the eye shadow was applied to the mascara, on the axial plane image, the width of artifact was 16.73 mm in the GE pulse sequence, 6.64 mm in the SE pulse sequence, and 6.19 mm in the FSE pulse sequence. The degree of the artifact appeared highly in order of the GE, the SE and the FSE. On the sagittal plane image, the length of artifact was 22.84 mm in the GE, 17.81 mm in the SE and it appeared highly with the SE and the FSE technique order. Conclusion : When examining the eyeball and the brain of a woman with the mascara and the eye shadow, we have to consider that the artifact caused by them can have an effect on the image diagnosis. We concluded that it is more suitable for a brain and a eyeball T2 emphasizing image to use the FSE technique than the GE technique.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.3
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• pp.251-258
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• 2020

Single crystal of fully dehydrated and partially Ca²⁺-exchanged zeolites A (|Ca₄Na₄|[Si₁₂Al₁₂O₄₈]-LTA) was brought into contact with Se in fine pyrex capillary at 523 K for 5 days. Crystal structure of Se-sorbed |Ca₄Na₄|[Si₁₂Al₁₂O₄₈]-LTA has been determined by single-crystal X-ray diffraction techniques at 294 K in the cubic space group $Pm{\bar{3}}m$ (a = 12.2787(13) Å). The crystal structure of yellow |Ca₄Na₄Se₄|[Si₁₂Al₁₂O₄₈]-LTA has been refined to the final error indices of R₁/wR₂ = 0.0960/0.3483 with 327 reflections for which F_o > 4s(F_o). In this structure, 4 Na⁺ and 4 Ca²⁺ ions fill every 6-ring site: These ions are all found at three crystallographic positions, on 3-fold axes equipoints of opposite 6-rings. Selenium atoms are found at three crystallographically distinct positions: 2 Se atoms per unit cell at Se(1) are located opposite 6-rings in the sodalite cavity (Se(1)-Na(1) = 2.53(5) Å) and 1 at Se(2) opposite 4-rings (Se(2)-O(1) = 2.76(10) Å) and 1 at Se(3) opposite 6-rings in the large cavity (Se(3)-Na(1) = 2.48(5) Å). Two molecular of Se₂ (Se(1)-Se(1) = 2.37(7) or 2.90(8) Å and Se(2)-Se(3) = 2.91(5) ) Å) are found in all sodalite cavity and large cavity. Other clusters such as Se₄ and Se₈ could be existed in large cavity. The inter-selenium distances turned out to be longer that of gases Se₂ molecule.