• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.34-38
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• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.1-4
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• 2007

The total Fluorine content in the precursor solution for MOD processing of YBCO coated conductors can be significantly reduced by synthesizing precursor solution with F-free Y & Cu precursor and Barium trifluoroacetate(TFA). It was shown that crack-free and uniform precursor films were formed after calcinations in humidified oxygen atmosphere. Less than 2 hours are required to finish the calcinations process and XRD measurement shows that $BaF_2,\;CuO,\;Y_2O_3$ are major constituent of calcined precursor films. Film thickness after calcinations was improved to be 2.8um by applying slot-die coating method. In particular, addition of Samarium shows critical current of $I_c=273A/cm-w(J_c=3.8MA/cm^2)$. It is shown that uniform and fast processing route to YBCO coated conductor with high Ic can be provided by employing F-free Y & Cu precursor solution in MOD process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1061-1066
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• 2006

This paper presents the electrical characteristics with manufacturing process and performance evaluation of high performance zinc oxide varistors. ZnO varistors were fabricated with typical ceramic production methods with different thickness and the structural and electrical characteristics of ZnO varistors were investigated. All varistors exhibited high density, which was in the range of $5.41{\sim}5.49g/cm^3$. In the electrical properties, the reference voltage increased in the range of $4.410{\sim}5.250kV$ with increasing their thickness and the residual voltage exhibited the same trends as the reference voltage. In the long duration current impulse withstand test, E-2 and F-1 samples failed at the two and four shots of impulse current, respectively, but E-1 and F-2 samples survived 18 shots during the test. Before and after this test, the variation ratio of residual voltage of E-1 and F-2 samples were -0.34 % and 0.05 %, respectively, which were in the acceptance range of 5 %. According to the results of tests, it is thought that if the fabrication process such as insulating coating, sintering condition, and soldering method is improved, these ZnO varistors would be possible to apply to the station class arresters in the near future.

• Corrosion Science and Technology
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• v.15 no.5
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• pp.209-216
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• 2016

In the present study, chitosan based self-healing anticorrosion coatings were prepared by layer by layer (lbl) addition of chitosan (Ch) and polyvinyl butyral (PVB) on mild carbon steel substrate. Chitosan coatings exhibited enhanced coating stability and corrosion resistance in aggressive environments by the application of a PVB top layer. Chitosan layer in the lbl coatings have been modified by using glutaraldehyde (Glu) and silica ($SiO_2$). Performance of different coatings was tested using electrochemical impedance spectroscopy and immersion test. The best anticorrosion performance was observed in case of 10 % Ch_$SiO_2$_PVB coatings, which withstand immersion test over 25 days in 0.5 M salt solution without visible corrosion. 10 % Ch_$SiO_2$ coatings without the PVB top layer didn't last more than 3days. Application of PVB top layer sealed the defects in the chitosan pre-layer and improved its hydrophobic nature as well. Raman spectra and SEM of steel surfaces after corrosion study and removal of PVB_Ch/Glu_PVB coatings showed a passive layer of iron oxide, attributing to the self-healing nature of these coatings. Conducting particle like graphene reinforcement of chitosan in the lbl coatings enhanced corrosion resistance of chitosan coatings.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.552-555
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• 2008

The purpose of this study was to find a best condition of fabricating lead zirconate thin film by sol-gel method, especially to find mol ratio and post annealing temperature. Lead zirconate thin film was made by spin coating method. The ratios of Pb and Zr of precursors were 1:0.8, 1:1.0, and 1:1.2. Annealing temperature of films were $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$ for 1 minute. Crystal structure was observed from XRD and antiferroelectricity was observed from hysteresis curves. The optimum mol ratio of Pb:Zr is 1:0.8 and annealing temperature is $800^{\circ}C$.

• Journal of the Korean Applied Science and Technology
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• v.29 no.2
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• pp.317-322
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• 2012

The microstructures were examined by SEM, FT-IR spectra, tensible properties mole % of [NCO/OH], and particle size analyzer. Growing concerns in the environment-friendly industries have led to the development of solvent-free formulations that can be cured. We had synthesized the polyurethane resin having the ability to protect stainless steel against corrosion. Compared with general packing materials and coatings, this resin is highly stronger in intensity and longer durability. Polyurethane resins were composed of polyols, IPDI, silicone surfactant, catalyst and crosslink agent. Moreover, thermal fillers such as $Al_2O_3$, fume silica and $ZrO_2$ not only accelerated the curing rate but also improved the physical property as thermal barriers. The rigid segments of polyurethane in mechanical properties were due to crosslink agent and the increase of [NCO/OH]. In conclusion, the polyurethane microstructure with crosslink agent can be good material for themoset coating of metal substrates such as stainless steel.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.115-118
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• 1999

Carbon composites with $MoSi_2$ dispersion were prepared by hot-pressing at $1700^{\circ}C$ under 30 MPa for 1 h using polysilazance as binding material. The composites consisted of C, $Mo_{4.8}Si_3C_{0.6}$ and SiC. Bulk density and porosity of the carbon composites with 10 vol% $MoSi_2$ was 1.8g.$\textrm{cm}^{-3}$ and 34%, respectively. This composite was oxidized about 0.05mm from the surface of the carbon composite after oxidation test at $1500^{\circ}C$ for 10h in air. Formation of the $SiO_2$ glass layer was observed by SEM. When this composite suffered damage in the coating layer, it had hardly farther oxidation because of its self-repairing property. The composite prepared in this study indicated good oxidation resistance.

• Journal of Hydrogen and New Energy
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• v.21 no.4
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• pp.271-277
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• 2010

$(Ba(Zr_{0.85}Y_{0.15})O_{3-\delta})$ oxide, showing high protonic conductivity at high temperatures and good chemical stability with $CO_2$ are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BZY-Ni layer has to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and may be applicable to the fabrication process of AD integration ceramic layer effectively. XRD, SEM, X-ray mapping measurements were conducted in order to analyze the characteristics of BZY-Ni membrane fabricated by AD process. it is observed that it is homogeneous distribution for BZY-Ni. The result of $H_2$ permeation rate suggests that BZY-Ni composite is higher than BZY.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.200-202
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• 1987

Sintered CdS films on glass substrate with low electrical resistivity and high optical transmittance have been prepared by coating and sintering method. All-polycrystalline CdS/CdTe solar cells with different microstructure and properties of CdTe layer were fabricated by coating a number of CdTe slurries, which consisted of Cd and Te powders, an appropriate amount of propylene glycol and 2 or 7.5 w/o $CdC1_2$, on the sintered CdS films and by sintering the glass-CdS-(Cd+Te) composites at various temperature. To explore the dependence of the solar efficiency on the preparation conditions of the CdTe layer, Cd powder with an average particle size of $0.3{\mu}m$ or $5{\mu}m$ was prepared. The use of Cd with finer particles forms more dense or uniform microstructure of the nuclear of CdTe during the heating. Therefore the use of Cd with finer particles improves the efficiency of the sintered CdS/CdTe solar cell by improving the microstructure of sintered CdTe layer. But the difference of solar efficiency by varing a particle size of Cd is decreased with increasing amount of $CdC1_2$ in the (Cd+Te) layer. All-polycrystalline CdS/CdTe solar cells with an efficiency of 10.2% under solar irradiation have been fabricated using a Cd with finer particles.