• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.6
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• pp.16-19
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• 1976

InSb-Sn thin film Hall device Was drepared by flash evaporation of InSb-Sn powder on the Slide qlass. The Characteristics Curve of this device showcd good linearity and reproducibility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1794-1798
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• 2018

We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.

• Journal of Environmental Science International
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• v.12 no.10
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• pp.1121-1129
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• 2003

We report the distributions of Sb and As in the surface sediment of the Yellow Sea and the coastal areas of Korea. The mean concentrations of Sb and As range from 0.68 ppm to 1.01 ppm and from 7.4 ppm to 15.8 ppm, respectively, and show relatively the high concentrations at the coast of Weolseong in the East Sea for Sb and at the coast of Gadeok Island in the South Sea far As. This may be due to the anthropogenic input of these elements via river and atmosphere from industry complex and agriculture regions around the study areas. Because of the difference of clay to silt proportion, the correlation between silt plus clay contents and Sb, As in the coastal surface sediment of Korea is not shown, the concentrations of Sb and As vary widely for the sample in which the silt plus clay contents are the same. Therefore, we suggest that the distribution patterns of Sb and As in surface sediment of the Yellow Sea and the coastal areas of Korea are mainly controlled by the anthropogenic inputs and the sediment characteristics. On the other hand, the Sb concentrations are lower than those of the lowest effect level which is the standard of judgment for contamination, while the As concentrations are higher than those of the lowest effect level. This implies that the surface sediments of the Yellow Sea and the coastal areas of Korea are considerably contaminated for As.

• Resources Recycling
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• v.21 no.4
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• pp.53-59
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• 2012

In this study, behaviors of removing Sb and Pb by oxidation of molten Bi-Pb-Sb alloy which is a by-product of non-ferrous smelting process was investigated. The molten alloy was oxidized at 1173 K by bubbling $N_2+O_2$ gas through a submerged nozzle. The Sb was removed and recovered as mixed phase of $Sb_2O_3$ and metal Sb. In the case of bubbling $N_2+O_2$ gas into molten Bi-Pb alloy at 923 K, Pb was oxidized and removed to slag. But Bi could not be refined due to simultaneous oxidization of Bi with Pb.

• Korean Journal of Soil Science and Fertilizer
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• v.49 no.3
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• pp.259-264
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• 2016

The effect of biochar application on soil physics and nitrous oxide ($N_2O$) emission from upland soil for broccoli cultivation was investigated. Sesame straw biochar (SB) was applied at amounts 0 (IF), 50 (SB50), 100 (SB100), 200 (SB200) kg $10a^{-1}$, respectively. SB addition to the upland soil decreased bulk density, and increased porosity and soil respiration. The $N_2O$ emission rates in all treatments were higher in the order of IF $${\geq_-}$$ SB50 > SB100 $${\geq_-}$$ SB200 treatments. Global warming potential in SB200 treatment decreased by 15.1% compared to IF treatment. Therefore, SB application in upland soil can improve soil physics and reduce $N_2O$ emission.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.33-37
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• 2008

The effects of Cu and Sb on the microstructure and mechanical properties of Sn-Sb-Cu-Ni-Cd whitemetal were investigated. Any compound phase was not observed in the whitemetal with 0.05 wt% Cu, while as the Cu content was increased, star- or needle-like $Cu_6Sn_5$ phases were found. The tensile strength gradually increased with Cu up to 5 % and then remained almost constant with Cu content above 5 %, while the hardness continuously increased with Cu content because of the increased hard $Cu_6Sn_5$ phases. As the Sb content increased, SbSn cuboids were present as well as $Cu_6Sn_5$. The tensile steength and hardness continuously increased and the elongation decreased with Sb content.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.305-305
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• 2011

Type-II 반도체 나노 구조는 그것의 band alignment 특성으로 인해 광학 소자에 다양한 응용성을 가진다. 특히, 대표적인 Type-II 반도체 나노 구조인 InSb/InAs 양자점의 경우, 약 3~5 ${\mu}m$의 mid-infrared 영역의 spectral range를 가지므로, 장파장을 요하는 소자에 유용하게 적용될 수 있다. 또한, Type-II 반도체 나노 구조의 밴드 구조를 staggered gap 혹은 broken gap 구조로 조절함으로써 infrared 영역 광소자의 전자 구조를 유용하게 바꾸어 적용할 수 있다. 최근, GaSb wafer 위에 InSb/InAsSb 양자점을 이용하여 cutoff wavelength를 6 ${\mu}m$까지 연장한 IR photodetector의 연구도 보고되고 있다. 하지만, GaSb wafer의 경우 그것의 비용 문제로 인해 산업적 적용이 쉽지 않다는 문제가 있다. 이러한 문제를 해결하기 위해 GaAs wafer와 같은 비용 효율이 높은 wafer를 사용한 연구가 필요할 것이다. 본 연구에서는 Molecular Beam Epitaxy(MBE)를 이용하여 undoped InAs wafer 와 semi-insulating GaAs wafer 상에 InSb 양자 구조를 형성한 결과를 보고한다. InSb 양자 구조는 20층 이상의 다층으로 형성되었고, 두 가지 경우 모두 400${\AA}$ spacer를 사용하였다. 단, InAs wafer 위에 형성한 InSb 양자 구조의 경우 InAs spacer를, GaAs wafer 위에 형성한 양자 구조의 경우 InAsSb spacer를 사용하였다. GaAs wafer 위에 양자 구조를 형성한 경우, InSb 물질과의 큰 lattice mismatch 차이 완화 뿐 아니라, type-II 밴드 구조 형성을 위해 1 ${\mu}m$ AlSb 층과 1 ${\mu}m$ InAsSb 층을 GaAs wafer 위에 미리 형성해 주었다. 양자 구조 형성 방법도 두 종류 wafer 상에서 다르게 적용되었다. InAs wafer 상에는 주로 일반적인 S-K 형성 방식이 적용된 것에 반해, GaAs wafer 상에는 migration enhanced 방식에 의해 양자 구조가 형성되었다. 이처럼 각 웨이퍼에 대해 다른 성장 방식이 적용된 이유는 InAsSb matrix와 InSb 물질 간의 lattice mismatch 차이가 6%를 넘지 못하여 InAs matrix에 비해 원하는 양자 구조 형성이 쉽지 않기 때문이다. 두 가지 경우에 대해 AFM과 TEM 측정으로 그 구조적 특성이 관찰되었다. 또한 infrared 영역의 소자 적용 가능성을 보기 위해 광학적 특성 측정이 요구된다.