• 대한수학회보
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• 제41권3호
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• pp.393-401
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• 2004

In this paper, we apply the concept of the group \ulcorner(X,A) of self pair homotopy equivalences of a CW-pair (X, A) to the Postnikov system. By using a short exact sequence related to the group of self pair homotopy equivalences, we obtain the following result: for any Postnikov section X$\sub$n/ of a CW-complex X, the group \ulcorner(X$\sub$n/, A) of self pair homotopy equivalences on the pair (X$\sub$n/, X) is isomorphic to the group \ulcorner(X) of self homotopy equivalences on X. As a corollary, we have, \ulcorner(K($\pi$, n), M($\pi$, n)) ≡ \ulcorner(M($\pi$, n)) for each n$\pi$1, where K($\pi$,n) is an Eilenberg-Mclane space and M($\pi$,n) is a Moore space.

• 한국표면공학회지
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• 제38권2호
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.

• Journal of the Korean Statistical Society
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• 제12권2호
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• pp.100-109
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• 1983

Let ${X_i}$ be a process with stationary and independent increments whose log characteristic function is expressed as $ibut-2^{-1}\sigma^2u^2t+t\int_{{0 }^c}{(exp(iux)-1-iux(i+x^2)^{-1})dv(x)}$. Our main result is taht $x^2(\int_{\y\>x}{dv(y)})/(\int_{$\mid$y$\mid$\leqx}{y^2dv(y)+\sigma^2}) \to 1$ as $x \to 0 (resp. x \to \infty)$ is necessary, and sufficient for ${X-i}$ to have ${A_t}$ and ${B_t}$ such that $(X_t-A_t)/B_t \to^D n(0,1)$ as $t \to 0 (resp. t \to \infty)$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.387-390
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• 1999

To improve the cycle performance LiM $n_2$ $O_4$as the cathode of 4V class lithium secondary batteries, the cathode properties of the cubic spinel phases LiM $g_{x}$ /M $n_{2-x}$/ $O_4$ synthesized at 80$0^{\circ}C$ were examined. All cathode material showed spinel phase based on cubic phase in X-ray diffraction however. other peaks gradually exhibited and became intense with the increase of x value in LiM $g_{x}$ /M $n_{2-x}$/ $O_4$. The cycle performance of the LiM $g_{x}$ /M $n_{2-x}$/ $O_4$was improved by the substitution of $Mg^{2+}$ for M $n^{3+}$ in the octahedral sites. Specially LiM $g_{0.1}$/M $n_{1.9}$ / $O_4$cathode materials showed the charge and discharge capacity of about 130~125mAh/g at first cycle and about 105mAh/g after 50th cycle. It is excellent than that of pure LiM $n_{2}$/ $O_4$ which 125mAh/g at first cycle 70mAh/g at 50th. In addition cathode material prepared at 80$0^{\circ}C$ for 24hr and 42hr in the charge and discharge capapcity as well as the cycle stability.ility.y.y.

• Korean Chemical Engineering Research
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• 제50권2호
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• pp.251-256
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• 2012

Keggin형 $H_{3+x}PW_{12-x}Nb_xO_{40}$(x=0, 1, 2, 3) 및 Wells-Dawson형 $H_{6+x}P_2W_{18-x}Nb_xO_{62}$(x=0, 1, 2, 3) 헤테로폴리산(Heteropolyacid) 촉매를 이용하여 n-Butanol의 에테르화(Etherification) 반응을 통한 Di-n-Butyl Ether의 제조를 수행하였다. 먼저 Niobium이 서로 다른 비율로 치환된 Keggin형 및 Wells-Dawson형 헤테로폴리산 촉매를 제조하였다. FT-IR, ICP-AES 및 $^{31}P$ NMR 분석을 통하여 촉매가 잘 제조되었음을 확인하였다. $NH_3$-TPD(Temperature-Programmed Desorption) 분석을 통해 헤테로폴리산 촉매의 산특성을 측정하였다. 두 계열의 촉매군에서 헤테로폴리산 촉매는 Niobium의 함량에 따라 다른 산특성을 나타내었다. 이후, 헤테로폴리산 촉매를 에테르화 반응에 적용하고 촉매의 반응활성과 산특성 간의 상관관계를 분석하였다. Keggin형 $H_{3+x}PW_{12-x}Nb_xO_{40}$ 및 Wells-Dawson형 $H_{6+x}P_2W_{18-x}Nb_xO_{62}$ 헤테로폴리산 촉매의 Acidity는 Keggin형과 Wells-Dawson형 모두에서 Niobium의 치환량이 증가함에 따라 감소하였으며, n-Butanol의 전환율과 Di-n-Butyl Ether로의 수율은 헤테로폴리산 촉매의 구조와 관계없이 Acidity가 증가함에 따라 선형적으로 증가하였다. 이처럼 헤테로폴리산의 Acidity는 n-Butanol의 에테르화(Etherification) 반응을 통한 Di-n-Butyl Ether의 제조 반응에서 촉매 활성을 결정하는 중요한 요소로 작용하였다.

• 한국진공학회지
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• 제7권s1호
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• pp.15-19
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• 1998

Structural and optical properties of $In_xGa_{1-X}N$ as well as $In_{0.1}Ga_{0.9}N$/GaN single quantum we11 (SQW) grown on sapphire (0001) substrate with an based GaN using rf-plasma assisted MBE have been investigated. The quality of the InXGal.,N fdm was improved as the growth temperature increased. In PL measurements at low temperatures, the band edge emission peaks of $In_xGa_{1-X}N$ was shifted to red region as an indium cell and substrate temperature increased. For $In_{0.1}Ga_{0.9}N$/GaN SQW, the optical emission energy has blue shift about 15meV in PL peak, due to the confined energy level in the well region. And, the FWHM of the $In_{0.1}Ga_{0.9}N$/GaN SQW was larger than that of the bulk Ino,la.9N films. The broadening of FWHM can be explained either as non-uniformity of Indium composition or the potential fluctuation in the well region. Photoconductivity (PC) decay measurement reveals that the optical transition lifetimes of the SQW measured gradually increased with temperatures.

• 한국표면공학회지
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• 제47권3호
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• pp.99-103
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• 2014

The encapsulation method of flexible organic light emitting devices (OLEDs) was investigated for the structure of ITO / 2-TNATA / NPB / $Alq_3$ : Rubrene (1 vol.%) / $Alq_3$ / LiF / Al / $Alq_3$ / LiF / Al (OLED #1), on which $SiN_x$ thin film was deposited and metal film was attached to protect the damage of OLED from oxygen and moisture. The $SiN_x$ thin film was deposited by plasma enhanced chemical vapor deposition (PECVD) method using $SiH_4$ of 20 sccm and $N_2$ of 15~35 sccm as reactor gases. The optimum $SiN_x$ deposition condition was found to be 20 sccm $SiH_4$ and 20 sccm $N_2$ from the Ca test of the fabricated $SiN_x$ thin film. The life time of OLED #1, OLED #1 / $SiN_x$ 200 nm, OLED #1 / $SiN_x$ 400 nm and OLED #1 / $SiN_x$ 400 nm / metal film was 7, 12, 25, and 45 hours, respectively. In conclusion, it has been shown that the lifetime of OLEDs can be improved more than 6 times by $SiN_x$ film and a metal film encapsulation.

• 대한수학회지
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• 제47권4호
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• pp.675-689
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• 2010

For a closed symplectic 4-manifold X, let $Diff_0$(X) be the group of diffeomorphisms of X smoothly isotopic to the identity, and let Symp(X) be the subgroup of $Diff_0$(X) consisting of symplectic automorphisms. In this paper we show that for any finitely given collection of positive integers {$n_1$, $n_2$, $\ldots$, $n_k$} and any non-negative integer m, there exists a closed symplectic (or K$\ddot{a}$hler) 4-manifold X with $b_2^+$ (X) > m such that the homologies $H_i$ of the quotient space $Diff_0$(X)/Symp(X) over the rational coefficients are non-trivial for all odd degrees i = $2n_1$ - 1, $\ldots$, $2n_k$ - 1. The basic idea of this paper is to use the local invariants for symplectic 4-manifolds with contact boundary, which are extended from the invariants of Kronheimer for closed symplectic 4-manifolds, as well as the symplectic compactifications of Stein surfaces of Lisca and Mati$\acute{c}$.

• 한국세라믹학회지
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• 제32권8호
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• pp.938-944
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• 1995

Dielectric properties and the stabilization of perovskite phase for the (1-y)Pb(Mg(1-x)/3Znx/3Znx/3Nb2/3)O3-yBaTiO3 ((1-y)PM1-xZxN-yBT) ceramics have been investigated as a function of amount of x and y. In the (1-y)PM0.6Z0.4N-yBT ceramics, the amount of pyrochlore phae was decreased by the addition of 2 mol% BT and the dielectric constant was increased. However, the dielectric constant decreased with further addition of BT even though pyrochlore phase was decreased. Dielectric prooperties in (1-y)PM0.6Z0.4N-yBT ceracmis were affected by the character of the BT rather than the amount of pyrochlore phase. The phase transitions were broadened and phase transition temperatures were lowered by the increase of BT contents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.444-447
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• 2000

The spinel L $i_{1-x}$ M $n_2$ $O_4$has been synthesized by the solid-state reaction. L $i_{l-x}$M $n_2$ $O_4$which includes a mixture of LiOH . $H_2O$ and Mn $O_2$prepared by preliminary heating at 35$0^{\circ}C$ for 12hr. L $i_{l-x}$M $n_2$ $O_4$fired at temperature range from 75$0^{\circ}C$ for 48hr. The structure and the electrochemical characteristics of spinel to L $i_{1-x}$ M $n_2$ $O_4$which is fabricated by changing sintering condition from starting materials are investigated. The cyclic voltammetric measurement was performed using 3 electrode cells. Electrode specific capacity and cycle life behavior were tested in a 3.0~4.2V range at a constant current density of 0.45mA/c $m^2$. To improve the cycle performance of spinel L $i_{l-x}$M $n_2$ $O_4$as the cathode of 4V class lithium secondary batteries, spinel phases L $i_{1-x}$ M $n_2$ $O_4$were Prepared at various lithium. The results showed that discharge capacity of L $i_{l-x}$M $n_2$ $O_4$varied at lithium quantity decrease with increasing lithium add quantity. The discharge capacities of L $i_{0.925}$M $n_2$ $O_4$and LiM $n_2$ $O_4$revealed 108 and 117mAh/g, respectively.spectively.y.