• The Korean Journal of Nuclear Medicine
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• v.31 no.3
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• pp.356-364
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• 1997

To evaluate the clinical utility of Tc-99m MIBI scan in the detection of residual thyroid tissue or metastatic lesion in postoperative thyroid cancer patients, we compared Tc-99m MIBI scan with I-131 diagnostic and therapeutic scan in 30 postoperative well-differentiated thyroid cancer patients. Thyroglobulin levels of both on and off thyroid hormone medication and antithyroglobulin antibody were tested [Tg(on), Tg(off)]. Positive rates for I-131 diagnostic and Tc-99m MIBI scan were 81% and 68% respectively. Concordance between I-131 diagnostic and Tc-99m MIBI scan was observed in 15 cases; 12 positive and 3 negative respectively. Among the 6 cases with negative I-131 diagnostic scan and positive Tc-99m MIBI scan, 4 were Positive in the therapeutic I-131 scan We concluded that Tc-99m MIBI scan maybe a useful complementary modality to the currently established method of I-131 scan and serum thyroglobulin level in the detection of recurrent or metastatic thyroid cancer, especially in the case of negative I-131 diagnostic scan.

• Aerospace Engineering and Technology
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• v.10 no.1
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• pp.13-19
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• 2011

Lift off acoustic loads of KSLV-I were predicted by the modified NASA SP-8072 source distribution method (method 2) and the result was compared with those of measurements in the flight test of KSLV-I. In the second flight test, lift off acoustic loads were measured by outer microphones attached on the cable mast. The onboard data measuring outer acoustic pressure at the interstage of KSLV-I also can be obtained. The predicted result showed very similar peak and the shape of spectrum when compared with the measured spectrum and a margin about +7 dB.

• Analytical Science and Technology
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• v.37 no.1
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• pp.12-24
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• 2024

In this study, laser-induced breakdown spectroscopy (LIBS) was used to estimate the degree of rice polishing. As-threshed rice seeds were dehusked and polished for different times, and the resulting grains were analyzed using LIBS. Various atomic, ionic, and molecular emissions were identified in the LIBS spectra. Their correlation with the amount of polished-off matter was investigated. Na I and Rb I emission line intensities showed linear sensitivity in the widest range of polished-off-matter amount. Thus, univariate models based on those lines were developed to predict the weight percent of polished-off matter and showed 3-5 % accuracy performances. Partial least squares-regression (PLS-R) was also applied to develop a multivariate model using Si I, Mg I, Ca I, Na I, K I, and Rb I emission lines. It outperformed the univariate models in prediction accuracy (2 %). Our results suggest that LIBS can be a reliable tool for authenticating the degree of rice polishing, which is closed related to nutrition, shelf life, appearance, and commercial value of rice products.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.149-150
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• 2007

ONO(Oxide-Nitride-Oxide)구조는 기억소자의 전하보유 능력을 향상시키기 위해 도입된 게이트 절연막이다. 본 연구에서는 ELA(Excimer Laser Annealing)방법으로 비정질 실리콘을 결정화 시켜서 그 위에 NVM(Nonvolatile Memory)소자를 만들어 전기적 특성을 측정하여 결과를 나타내었다. 실험 결과 같은 크기의 $V_D$에서 $V_G$를 조절함으로써 $I_D$의 크기를 조절할 수 있었다. $V_G-I_D$ Graph에서는 $I_{on}$과 $I_{off}$, 그리고 Threshold Voltage를 알 수 있었다. $I_{on}/I_{off}$ Ratio는 $10^3-10^4$이다. $V_G-I_D$ Graph에서는 게이트에 인가하는 Bias의 양을 통해서 Threshold Voltage의 크기를 조절할 수 있었다. 이는 Trap되는 Charge의 양을 임의로 조절할 수 있다는 것을 의미하며, 이러한 Programming과 Erasing의 특성을 이용하여 기억소자로서의 역할을 수행하게 된다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.12
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• pp.1391-1400
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• 1992

In this paper, we suggested a method for evaluating the type-I/II error which is proposed by the CCITT as a criterion for the accuracy of policing algorithms in ATM networks, By the analysis of the type-I/II error of the Leaky Bucket(LB) algorithm, we investigated the relationships between the traffic parameters and the LB parameters to police the mean and peak cell rate effectively in the ON/OFF traffic. We showed that the LB parameters, the leaky rate a and the threshold M of the LB counter, could be determined as a pair of (a, M) satisfying the type-I/II error and minimizing the response time. In the ON/OFF traffic, it has been observed that the a-M characteristic curve of the LB policing algorithm only depends on the burstiness. As the results of the performance analysis, we found that the LB algorithm exhibits a good performance in the peak rate policing, but has some problems in the mean rate policing due to the trade-off between the accuracy and the response time.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.105-106
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• 2005

The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.164-167
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• 1996

This paper presents an off-line P.I.D parameter estimation method during normal operation in power plant. The process parameters are estimated using the recursive least square method. The controller parameters are estimated on the basis of desired characteristics of the dynamic model of the closed-loop control.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.2
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• pp.160-168
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• 2010

An experimental study has been conducted to investigate the effects of forcing amplitude on the tone-excited non-premixed jet flame of the resonance frequency. Visualization techniques are employed using the laser optic systems, which are RMS tomography, PLIF and PIV system. There are three lift-off histories according to the fuel flow rates and forcing amplitudes; the regime I always has the flame base feature like turbulent flame when the flame lift-off, while the flame easily lift-off in the regime II even if a slight forcing amplitude applied. The other is a transient regime and occurs between the regime I and regime II, which has the flame base like the bunsen flame of partial premixed flame. In the regime I and II, the characteristics of the mixing and velocity profile according to the forcing phase were investigated by the acetone PLIF, PIV system. Particular understanding is focused on the distinction of lift-off history in the regime I and II.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.234-237
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• 2013

본 논문에서는 실리콘 나노선 구조를 갖는 모스펫 (Metal-Oxide-Semiconductor Field Effect Transistors, MOSFETs)과 쇼트키 장벽 트랜지스터 (Schottky-Barrier(SB) MOSFETs, SB-MOSFETs)의 전기적인 특성을 양자역학적 시뮬레이션 계산을 통해 비교하였다. 쇼트키 장벽 높이 (Schottky Barrier, ${\phi}_{SBH}$)에 따른 SB-MOSFETs의 터널링 특성을 분석하고, 소스/드레인 (S/D) 길이가 변함에 따라 달라지는 S/D 저항을 계산하여, ${\phi}_{SBH}$가 0eV인 SB-MOSFETs의 On과 Off $I_D$ 비율 ($I_{ON}/I_{OFF}$)이 MOSFETs보다 개선될 수 있음을 보였다.