• Title/Summary/Keyword: $I_{K,n}$

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Multiple Parallel-Pollard's Rho Discrete Logarithm Algorithm

  • Lee, Sang-Un
    • Journal of the Korea Society of Computer and Information
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    • v.20 no.8
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    • pp.29-33
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    • 2015
  • This paper proposes a discrete logarithm algorithm that remarkably reduces the execution time of Pollard's Rho algorithm. Pollard's Rho algorithm computes congruence or collision of ${\alpha}^a{\beta}^b{\equiv}{\alpha}^A{\beta}^B$ (modp) from the initial value a = b = 0, only to derive ${\gamma}$ from $(a+b{\gamma})=(A+B{\gamma})$, ${\gamma}(B-b)=(a-A)$. The basic Pollard's Rho algorithm computes $x_i=(x_{i-1})^2,{\alpha}x_{i-1},{\beta}x_{i-1}$ given ${\alpha}^a{\beta}^b{\equiv}x$(modp), and the general algorithm computes $x_i=(x_{i-1})^2$, $Mx_{i-1}$, $Nx_{i-1}$ for randomly selected $M={\alpha}^m$, $N={\beta}^n$. This paper proposes 4-model Pollard Rho algorithm that seeks ${\beta}_{\gamma}={\alpha}^{\gamma},{\beta}_{\gamma}={\alpha}^{(p-1)/2+{\gamma}}$, and ${\beta}_{{\gamma}^{-1}}={\alpha}^{(p-1)-{\gamma}}$) from $m=n={\lceil}{\sqrt{n}{\rceil}$, (a,b) = (0,0), (1,1). The proposed algorithm has proven to improve the performance of the (0,0)-basic Pollard's Rho algorithm by 71.70%.

NORMAL INTERPOLATION ON AX=Y AND Ax=y IN A TRIDIAGONAL ALGEBRA $ALG\mathcal{L}$

  • Kang, Joo-Ho
    • Journal of applied mathematics & informatics
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    • v.24 no.1_2
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    • pp.535-539
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    • 2007
  • Given operators X and Y acting on a separable complex Hilbert space $\mathcal{H}$, an interpolating operator is a bounded operator A such that AX=Y. In this article, we show the following: Let $Alg\mathcal{L}$ be a tridiagonal algebra on a separable complex Hilbert space $\mathcal{H}$ and let $X=(x_{ij})\;and\;Y=(y_{ij})$ be operators in $\mathcal{H}$. Then the following are equivalent: (1) There exists a normal operator $A=(a_{ij})\;in\;Alg\mathcal{L}$ such that AX=Y. (2) There is a bounded sequence $\{\alpha_n\}\;in\;\mathbb{C}$ such that $y_{ij}=\alpha_jx_{ij}\;for\;i,\;j\;{\in}\;\mathbb{N}$. Given vectors x and y in a separable complex Hilbert space $\mathcal{H}$, an interpolating operator is a bounded operator A such that Ax=y. We show the following: Let $Alg\mathcal{L}$ be a tridiagonal algebra on a separable complex Hilbert space $\mathcal{H}$ and let $x=(x_i)\;and\;y=(y_i)$ be vectors in $\mathcal{H}$. Then the following are equivalent: (1) There exists a normal operator $A=(a_{ij})\;in\;Alg\mathcal{L}$ such that Ax=y. (2) There is a bounded sequence $\{\alpha_n\}$ in $\mathbb{C}$ such that $y_i=\alpha_ix_i\;for\;i{\in}\mathbb{N}$.

InAs/GaAs 양자점 태양전지의 광학적 특성 평가: 접합계면전기장 및 AlGaAs 포텐셜 장벽효과

  • Kim, Jong-Su;Han, Im-Sik;Lee, Seung-Hyeon;Son, Chang-Won;Lee, Sang-Jo;Smith, Ryan P.;Ha, Jae-Du;Kim, Jin-Su;No, Sam-Gyu;Lee, Sang-Jun;Choe, Hyeon-Gwang;Im, Jae-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.107-107
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    • 2012
  • 본 연구에서는 GaAs p-i-n 태양전지구조에 InAs 양자점을 삽입하여 계면의 전기장 변화를 Photoreflectance (PR) 방법으로 연구하였다. InAs/GaAs 양자점 태양전지구조는 n-GaAs 기판위에 p-i-n 구조의 태양전지를 분자선박막성장 장치를 이용하여 제작하였다. GaAs p-i-n 태양전지와 p-QD(i)-n 양자점 태양전지를 제작하여 계면전기장의 변화를 PR 신호에 나타난 Franz-Keldysh oscillation (FKO)으로부터 측정하였다. 기본적인 p-i-n 구조에서 두 가지 전기장성분을 검출 하였고 양자점 태양전지구조에서는 39 kV/cm 이상의 내부전기장이 존재함을 관측하였다. 이러한 내부전기장은 양자점 주변에 형성된 국소전기장의 효과로 추측하였다. 아울러 양자점을 AlGaAs 양자우물 구조에 삽입하여 케리어의 구속에 의한 FKO의 변화를 관측하였으며 양자점 태양전지의 구조적 변화에 따른 효율을 측정하여 비교 분석하였다.

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Subthreshold Characteristics of a 50 nm Impact Ionization MOS Transistor (50 nm Impact Ionization MOS 소자의 Subthreshold 특성)

  • Yoon, Jee-Young;Ryu, Jang-Woo;Jung, Min-Chul;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.105-106
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    • 2005
  • The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

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TOPOLOGICAL ENTROPY OF A SEQUENCE OF MONOTONE MAPS ON CIRCLES

  • Zhu Yuhun;Zhang Jinlian;He Lianfa
    • Journal of the Korean Mathematical Society
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    • v.43 no.2
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    • pp.373-382
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    • 2006
  • In this paper, we prove that the topological entropy of a sequence of equi-continuous monotone maps $f_{1,\infty}={f_i}\;\infty\limits_{i=1}$on circles is $h(f_{1,\infty})={\frac{lim\;sup}{n{\rightarrow}\infty}}\;\frac 1 n \;log\;{\prod}\limits_{i=1}^n|deg\;f_i|$. As applications, we give the estimation of the entropies for some skew products on annular and torus. We also show that a diffeomorphism f on a smooth 2-dimensional closed manifold and its extension on the unit tangent bundle have the same entropy.

Characterization and Design Consideration of 80-nm Self-Aligned N-/P-Channel I-MOS Devices

  • Choi, Woo-Young;Lee, Jong-Duk;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.1
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    • pp.43-51
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    • 2006
  • 80-nm self-aligned n-and p-channel I-MOS devices were demonstrated by using a novel fabrication method featuring double sidewall spacer, elevated drain structure and RTA process. The fabricated devices showed a normal transistor operation with extremely small subthreshold swing less than 12.2 mV/dec at room temperature. The n- and p-channel I-MOS devices had an ON/OFF current of 394.1/0.3 ${\mu}A$ and 355.4/8.9 ${\mu}A$ per ${\mu}m$, respectively. We also investigated some critical issues in device design such as the junction depth of the source extension region and the substrate doping concentration.

SOME RESULTS RELATED TO DISTRIBUTION FUNCTIONS OF CHI-SQUARE TYPE RANDOM VARIABLES WITH RANDOM DEGREES OF FREEDOM

  • Hung, Tran Loc;Thanh, Tran Thien;Vu, Bui Quang
    • Bulletin of the Korean Mathematical Society
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    • v.45 no.3
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    • pp.509-522
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    • 2008
  • The main aim of this paper is to present some results related to asymptotic behavior of distribution functions of random variables of chi-square type $X^2_N={\Sigma}^N_{i=1}\;X^2_i$ with degrees of freedom N, where N is a positive integer-valued random variable independent on all standard normally distributed random variables $X_i$. Two ways for computing the distribution functions of chi-square type random variables with random degrees of freedom are considered. Moreover, some tables concerning considered distribution functions are demonstrated in Appendix.

Korean-English statistical speech translation Using n-best re-ranking (n-best 리랭킹을 이용한 한-영 통계적 음성 번역)

  • Lee, Dong-Hyeon;Lee, Jong-Hoon;Lee, Gary Geun-Bae
    • Annual Conference on Human and Language Technology
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    • 2006.10e
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    • pp.171-176
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    • 2006
  • 본 논문에서는 n-best 리랭킹을 이용한 한-영 통계적 음성 번역 시스템에 대해 논하고 있다. 보통의 음성 번역 시스템은 음성 인식 시스템, 자동 번역 시스템, 음성 합성 시스템이 순차적으로 결합되어 있다. 하지만 본 시스템은 음성 인식 오류에 보다 강인한 시스템을 만들기 위해 음성 인식 시스템으로부터 n-best 인식 문장을 추출하여 번역 결과와 함께 리랭킹의 과정을 거친다. 자동 번역 시스템으로 구절기반 통계적 자동 번역 모델을 사용하여, 음성 인식기의 발음 모델에서 기본 단어 단위와 맞추어 번역 모델과 언어 모델을 훈련시킴으로써 음성 번역 시스템에서 형태소 분석기를 제거할 수 있다. 또한 음성 인식 시스템에서 상황 별로 언어 모델을 분리하여 처리함으로써 자동 번역 시스템에 비해 부족한 음성 인식 시스템의 처리 범위를 보완할 수 있었다.

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Evaluation of Treatment Efficencies of Pollutants in Bongsan Constructed Wetlands for Treating Non-point Source Pollution (비점오염원 저감을 위한 봉산 인공습지의 오염물질 정화효율 평가)

  • Choi, Ik-Won;Moon, Sung-Dong;Seo, Dong-Cheol;Kang, Se-Won;Lim, Byung-Jin;Park, Jong-Hwan;Kim, Kap-Soon;Lee, Jun-Bae;Heo, Jong-Soo;Cho, Ju-Sik
    • Korean Journal of Soil Science and Fertilizer
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    • v.44 no.6
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    • pp.1089-1094
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    • 2011
  • To treat non-point source pollution in Juam lake, removal efficiencies of pollutants were investigated in Bongsan constructed wetlands (CWs) at different treatment time, stages and wastewater loads. The constructed wetlands consisted of forebay, $1^{st}$ and $2^{nd}$ wetlands. The concentrations of BOD, SS, T-N, and T-P in inflow were $1.87mg\;L^{-1}$, $1.62mg\;L^{-1}$, $11.47mg\;L^{-1}$, and $4.40mg\;L^{-1}$, respectively. The removal rates of BOD, SS, T-N, and T-P in Bongsan CWs were 26, 18, 16 and 9%, respectively. The removal rates of BOD and T-N were higher than those for SS and T-P. The amounts of pollutant removal in Bongsan CWs were higher in the order of forebay > $1^{st}$ wetland > $2^{nd}$ wetland for BOD, forebay > $2^{nd}$ wetland > $1^{st}$ wetland for SS, $1^{st}$ wetland > forebay > $2^{nd}$ wetland for T-N and $2^{nd}$ wetland > forebay > $1^{st}$ wetland for T-P.