• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1199-1202
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• 2008

High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures ($200^{\circ}C$, $250^{\circ}C$ and $300^{\circ}C$) was evaluated and compared with two series of TFTs produced at room temperature and $150^{\circ}C$ during the channel deposition. From the results it was observed that the effect of pos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of $24.6\;cm^2/Vs$, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an $I_{ON}/I_{OFF}$ ratio of $8{\times}10^7$, satisfying all the requirements to be used in active-matrix backplane.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.10
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• pp.1927-1934
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• 2016

In this paper, we proposed a I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistor) structure in order to mitigate a radiation-induced leakage current path in an isolation oxide interface of a silicon-based standard n-MOSFET. The proposed I-gate n-MOSFET structure was designed by using a layout modification technology in the standard 0.18um CMOS (Complementary Metal Oxide Semiconductor) process, this structure supplements the structural drawbacks of conventional radiation-tolerant electronic device using layout modification technology such as an ELT (Enclosed Layout Transistor) and a DGA (Dummy Gate-Assisted) n-MOSFET. Thus, in comparison with the conventional structures, it can ensure expandability of a circuit design in a semiconductor-chip fabrication. Also for verification of a radiation-tolerant characteristic, we carried out M&S (Modeling and Simulation) using TCAD 3D (Technology Computer Aided Design 3-dimension) tool. As a results, we had confirmed the radiation-tolerant characteristic of the I-gate n-MOSFET structure.

• Korean Journal of Ecology and Environment
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• v.37 no.1 s.106
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• pp.102-105
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• 2004

Larvae of two heptageniid mayflies, Iron martinus Braasch and Sold${\acute}$n and Iron longitibius sp. n., are described from Vietnam. The larva of I. martinus is distinguished by the paired spines on the abdominal segments 1-9; the larva of I. longitibius sp. n. is distinguished by the relatively long foretibiae. Their descriptions, diagnoses, line drawings of key characters, material examined, distributions, and habitat and biology data are provided.

• Journal of applied mathematics & informatics
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• v.27 no.5_6
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• pp.1465-1472
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• 2009

In This paper we shall study the existence of solutions of nonlinear two point boundary value problems for nonlinear 2nth-order differential equation $y^{(2n)}=f(t,y,y',{\cdots},y^{(2n-1)})$ with the boundary conditions $g_0(y(a),y'(a),{\cdots},y^{2n-3}(a))=0,g_1(y^{(2n-2)}(a),y^{(2n-1)}(a))=0$, $h_o(y(c),y'(c))=0,h_i(y^{(i)}(c),y^{(i+1)}(c))=0(i=2,3,{\cdots},2n-2)$.

• Bulletin of the Korean Mathematical Society
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• v.51 no.2
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• pp.373-386
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• 2014

Let (R,m) be a commutative Noetherian local ring. In this paper we show that a finitely generated R-module M of dimension d is Cohen-Macaulay if and only if there exists a proper ideal I of R such that depth($M/I^nM$) = d for $n{\gg}0$. Also we show that, if dim(R) = d and $I_1{\subset}\;{\cdots}\;{\subset}I_n$ is a chain of ideals of R such that $R/I_k$ is maximal Cohen-Macaulay for all k, then $n{\leq}{\ell}_R(R/(a_1,{\ldots},a_d)R)$ for every system of parameters $a1,{\ldots},a_d$ of R. Also, in the case where dim(R) = 2, we prove that the ideal transform $D_m(R/p)$ is minimax balanced big Cohen-Macaulay, for every $p{\in}Assh_R$(R), and we give some equivalent conditions for this ideal transform being maximal Cohen-Macaulay.

• Bulletin of the Korean Mathematical Society
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• v.54 no.3
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• pp.875-894
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• 2017

Let $[n]=\{1,2,{\ldots},n\}$. A set ${\mathbf{A}}=\{A_1,A_2,{\ldots},A_l\}$ is a minimal cover of [n] if ${\cup}_{1{\leq}i{\leq}l}A_i=[n]$ and $$\bigcup_{{1{\leq}i{\leq}l,}\\{i{\neq}j_0}}A_i{\neq}[n]\text{ for all }j_0{\in}[l]$$. Let ${\mathcal{C}}(n)$ denote the collection of all minimal covers of [n], and write $C_n={\mid}{\mathcal{C}}(n){\mid}$. Let ${\mathbf{A}}{\in}{\mathcal{C}}(n)$. An element $u{\in}[n]$ is critical in ${\mathbf{A}}$ if it appears exactly once in ${\mathbf{A}}$. Two minimal covers ${\mathbf{A}},{\mathbf{B}}{\in}{\mathcal{C}}(n)$ are said to be restricted t-intersecting if they share at least t sets each containing an element which is critical in both ${\mathbf{A}}$ and ${\mathbf{B}}$. A family ${\mathcal{A}}{\subseteq}{\mathcal{C}}(n)$ is said to be restricted t-intersecting if every pair of distinct elements in ${\mathcal{A}}$ are restricted t-intersecting. In this paper, we prove that there exists a constant $n_0=n_0(t)$ depending on t, such that for all $n{\geq}n_0$, if ${\mathcal{A}}{\subseteq}{\mathcal{C}}(n)$ is restricted t-intersecting, then ${\mid}{\mathcal{A}}{\mid}{\leq}{\mathcal{C}}_{n-t}$. Moreover, the bound is attained if and only if ${\mathcal{A}}$ is isomorphic to the family ${\mathcal{D}}_0(t)$ consisting of all minimal covers which contain the singleton parts $\{1\},{\ldots},\{t\}$. A similar result also holds for restricted r-cross intersecting families of minimal covers.

• Korean Journal of Mathematics
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• v.28 no.1
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• pp.1-7
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• 2020

A partition X describes that there exists α_i kinds of alleles occurring i loci for each i. All genes have multiple alleles, i.e., they exist in more than two allelic forms, although any one diploid organism can carry no more than two alleles. The number of possible genotypes in a multiple allel series depends on the number of alleles. We will deal with an n locus model in which mutation and gene conversion are taken into consideration. In this paper, we firstly find the probability p_n(x) of genotype $$p_{n+1}(x)=p_n(x){\sum\limits_{k=1}^{r}}q_{kx}p_n(k)$$ with the rates of mutation and gene conversion. Also we find the probability of genotype without the rates of mutation and gene conversion and we apply this probability to two examples.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.948-952
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• 2003

New approach for the determination of Ag(I) ion was performed by using a carbon paste electrode (CPE) containing N,N'-Diphenyl oxamide (DPO) with anodic stripping voltammetry. The CMEs have been prepared by making carbon paste mixtures containing an appropriate amount of DPO salt coated onto graphite particles to analyze trace metal ions via complexation followed by stripping voltammetry. Various experimental parameters affecting the response, such as pH, deposition time, temperature, and electrode composition, were carefully optimized. Using differential pulse anodic stripping voltammetry, the logarithmic linear response range for the Ag(I) ion was 1.0 × $10^{-7}$ - 5.0 × $10^{-9}$ M at the deposition time of 10 min, with the detection limit was 7.0 × $10^{-10}$ M. The detection limit adopted from anodic stripping differential pulse voltammetry was 7.0 × $10^{-10}$ M for silver and the relative standard deviation was ± 3.2% at a 5.0 × $10^{-8}$ M of Ag(I) ion (n = 7). The proposed electrode shows a very good selectivity for Ag(I) in a standard solution containing several metals at optimized conditions.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1898-1900
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• 1999

The possible origins of instabilities observed in high-voltage p-i-n devices were investigated. It was concluded that the temporary changes of electrical characteristics may be due to the changes of the physical parameters of gold acceptor, while the permanent changes are due to process-related factors.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.6 no.2
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• pp.1-8
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• 2002

Let $T_{\phi}$ be a generalized Gauss transformation and $[a_1,\;a_2,\;{\cdots}]_{T_{\phi}}$ be a symbolic representation of $x{\in}[0,\;1)$ induced by $T_{\phi}$, i.e., generalized continued fraction expansion induced by $T_{\phi}$. It is shown that the distribution of relative frequency of [$k_1,\;{\cdots},\;k_n$] in $[a_1,\;a_2,\;{\cdots}]_{T_p}$ satisfies Central Limit Theorem where $k_i{\in}{\mathbb{N}}$ for $1{\leq}i{\leq}n$.