• Title/Summary/Keyword: $H_2O $

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Study on Improvement of Etch Rate and SiO2 Regrowth in High Selectivity Phosphoric Acid Process (고선택비 인산공정에서의 식각율 향상과 SiO2 재성장에 관한 연구)

  • Lee, Seunghoon;Mo, Sungwon;Lee, Yangho;Bae, JeongHyun
    • Korean Journal of Materials Research
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    • v.28 no.12
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    • pp.709-713
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    • 2018
  • To improve the etch rate of $Si_3N_4$ thin film, $H_2SiF_6$ is added to increase etching rate by more than two times. $SiO_3H_2$ is gradually added to obtain a selectivity of 170: 1 at 600 ppm. Moreover, when $SiO_3H_2$ is added, the etching rate of the $SiO_2$ thin film increases in proportion to the radius of the wafer. In $Si_3N_4$ thin film, there is no difference in the etching rate according to the position. However, in the $SiO_2$ thin film, the etching rate increases in proportion to the radius. At the center of the wafer, the re-growth phenomenon is confirmed at a specific concentration or above. The difference in etch rates of $SiO_2$ thin films and the reason for regrowth at these positions are interpreted as the result of the flow rate of the chemical solution replaced with fresh solution.

The Effect of Sintering Time in the Microstructure and Electric Conductivity of $(Gd_2O_3)_{0.05}(Y_2O_3)_{0.05}(ZrO_2)_{0.9}$ System ($(Gd_2O_3)_{0.05}(Y_2O_3)_{0.05}(ZrO_2)_{0.9}$계의 소결시간에 따른 미세구조와 전기전도도)

  • 임용무;장복기;신동선;김동근;김종빈;윤성도
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1099-1107
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    • 1998
  • In this study, the microstructure and electric conductivity of 5mol% $Gd_2O_3$-5mol% $Y_2O_3-ZrO_2$ system(5G5YZ) with a variation of sintering time at $1600^{\circ}C$ were investigated. By the result of TEM analysis of 5G5YZ sintered for 12h, a microcrack was observed near grain boundary. The change of the sintering time did not affect the lattice conductivity, but the grain boundary contribution was varied with the sintering time. The grain boundary conductivity of the sample sintered for 1h showed the highest value. Furthermore, the activation energy of the total conductivity was independent upon the sintering time and showed approximately 1.01eV. The highest conductivity measured at $1000^{\circ}C$ was 0.0197S/cm with the sample sintered for 1h. Comparing to 0h’s, the thickness ration of grain boundary as a function of sintering time were 0.88, 1.11 and 1.29 for 1h, 5h and 12h, respectively. In case of the sample sintered for 1h, the thickness of the grain boundary showed the lowest value. The increase of the sintering time over 1h made the decrease of the electric conductivity as well as the increase of the grain growth and the thickness of the grain boundary. As a result, it seemed that the proper sintering time for 5G5YZ composition was 1h.

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Fabrication of $Y_2O_3-ZrO_2$ and $CaO-ZrO_2$ Fibers by Sol-Gel Process and Their Phase Characterization by Raman Microprobe (졸-겔법에 의한 $Y_2O_3-ZrO_2$계와 $CaO-ZrO_2$계 섬유의 제조 및 Raman Microprobe에 의한 상분석)

  • 황진명;은희태;권혁기
    • Journal of the Korean Ceramic Society
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    • v.31 no.1
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    • pp.104-114
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    • 1994
  • ZrO2 fibers were fabricated by means of the Sol-Gel process using Zr(O-nC3H7)4-H2O-C2H5OH-HNO3 solution as a starting material. The optimum experimental parameters such as molar ratio of starting materials, concentration, temperature, viscosity, the amounts of stabilizer and the pH of solution were determined. The experimentally determined optimum variables which produce good ZrO2 fibers were used to manufacture the Y2O3-and CaO-ZrO2 fibers. The amounts of Y2O3 and CaO were varied within the range from 1.5~5 mol% and 3~15 mol% respectively. The phase transformation and microstructural evolution of the fabricated ZrO2 gel fibers were investigated after heat treatments up to 120$0^{\circ}C$ by X-ray diffraction, Raman microprobe spectroscopy, SEM, and specific surface area and pore volume measurements. From the analysis of X-ray diffraction and Raman spectra, the phase of heat treated Y2O3-and CaO partially stabilized ZrO2 gel fibers(Y2O3:2.5~3 mol%, CaO:6~9 mol%) were identified as a tetragonal phase up to 100$0^{\circ}C$. The maximum tensile strength of 2.5Y2O3-97.5ZrO2 and 6CaO-94ZrO2 (in mol%) fibers heat treated at 100$0^{\circ}C$ for 1 hr was found be 1.3~2 GPa with diameters of 10~20 ${\mu}{\textrm}{m}$.

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Expression of Cu/Zn SOD according to H2O2 in Hepatoma cell line (Hepatoma 세포주에서 H2O2 처리에 의한 Cu/Zn SOD의 발현)

  • Kim, Young-Min;Seo, Won-Sook
    • Journal of Life Science
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    • v.17 no.2 s.82
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    • pp.230-234
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    • 2007
  • Oxygen is required for many important aerobic cellular reactions, it may undergo electrontransfer reactions, which generate highly reactive membrane-toxic intermediates (reactive oxygen species, ROS), such as hydrogen peroxide, singlet oxygen, superoxide radical, hydroxyl radical, hydroperoxyl radical, hydroxy ion. Various mechanisms are available to protect cells against damage caused by oxidative free radicals, including scavenging enzyme systems such as superoxide dismutase (SOD), catalase (CAT), and glutathione peroxidase (GPx). This antioxidant defense system is a very complex and finely tuned system consisting of enzymes capable of detoxifying oxygen radicals as well as low molecular weight antioxidants. In addition, repair and turnover processes help to minimize subcellular damage resulting from free radical attack. $H_2O_2$,one of the major ROS, is produced at a high rate as a product of normal aerobic metabolism. The primary cellular enzymatic defense systems against $H_2O_2$ are the glutathione redox cycle and catalase. From Northern blot analysis of total RNAs from cultured cell with $H_2O_2$ treatment, various results were obtained. Expression of Cu/Zn SOD decreased when cell passage increased, but the level of the Cu/Zn SOD was scarcely expressed in 35 passage.

Influence of Ni/CeO2-ZrO2 Catalysts on Methane Autothermal Reforming (메탄 자열개질 반응에 대한 Ni/CeO2-ZrO2 촉매의 영향)

  • Kang, Min Goo;Lee, Tae Jun;Lee, Jong Dae
    • Korean Chemical Engineering Research
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    • v.47 no.1
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    • pp.17-23
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    • 2009
  • The catalytic behavior of $Ni/Ce_XZr_{(1-X)}O_2$ loaded on the alumina coated honeycomb monolith was studied for the autothermal reforming reaction of methane. Among the catalysts with the different Ce/Zr ratios, the $Ni/Ce_{0.80}Zr_{0.20}O_2$ Catalyst showed the highest conversion of methane. By investigating the effect of Ni content on the $Ni/Ce_{0.80}Zr_{0.20}O_2$ catalysts, the catalyst loaded with 15wt% Ni had the highest activity. Also, $H_2$ yield was increased as $H_2O/CH_4$ ratio increased. Methane conversion was improved as $O_2/CH_4$ ratio was increased, whereas the yield of $H_2$ was decreased. Among the catalysts tested for 30 hours, $Ni(15wt%)/Ce_{0.80}Zr_{0.20}O_2$ showed the excellent conversion(${\geq}99%$) of methane and the stability at the condition of $GHSV=30,000h^{-1}$, feed ratio S/C/O=2/1/0.5 and reaction temperature $800^{\circ}C$.

Effect of ECR-Ion Milling on Exchange Biasing in NiO/NiFe Bilayers

  • D.G. Hwang;Lee, S. S.;Lee, K. H.;Lee, K. B.;Park, D. H.;Lee, H. S.
    • Journal of Magnetics
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    • v.5 no.1
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    • pp.23-25
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    • 2000
  • We have investigated the effects of Ar and$O_2$-ion milling on the exchange coupling field ($H_{ex}$) and coercive field ($H_c$) at the interfaces between substrates and NiO/NiFe films, to understand the exchange biasing mechanism. The $O_2$-ion milling was successfully performed by means of the electron cyclotron resonance (ECR) process. We found that the local roughness gradient of the NiO surface increased by $O_2$-ion milling. The ratio of $H_{ex}/H_c$ increased from 0.87 to 1.77, whereas $H_c$ decreased by almost a half as a results of the ion milling. The decrease in $H_c$could be interpreted as due to the refinement of magnetic domain size, which arose from the increase of the local roughness gradient of the NiO surface. The decrease in low $H_c$, and increase in $H_{ex}$ in NiO spin valves by ECR-ion milling are in the right direction far use in magnetoresistance (MR) heads.

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Characteristics of ZnO:Al Thin Films for TCO Prepared by RE Magnetron Sputtering in $H_2/Ar$ Atmosphere ($H_2/Ar$분위기에서 제조한 투명전극용 ZnO:Al 박막의 특성)

  • Tark, Sung-Ju;Lee, Jeong-Seop;Kim, Won-Mok;Kim, Dong-Hwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.162-165
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    • 2006
  • AZO (ZnO:Al) were fabricated by RF magnetron sputtering In $H_2/Ar(5%\;H_2)$ atmosphere, and structural, electrical and optical properties were investigated. The substrate temperatures were varied at RT, $100^{\circ}C,\;150^{\circ}C$ and$200^{\circ}C$. The resistivity of the films grown in $H_2/Ar(5%\;H_2)$ were reduced from $7.67{\times}10^{-4}{\Omega}\;cm$ to $5.95{\times}10^{-4}{\Omega}\;cm$ comparing that Ar (100%) and the transmittance of the ZnO:Al films in the visible range was 85%.

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Plasma Catalytic Methane Conversion over Sol-gel Derived Pt/TiO2 Catalyst in a Dielectric-barrier Discharge Reactor (DBD 반응기에서 솔-젤 법으로 제조된 Pt/TiO2 촉매를 이용한 메탄의 플라즈마 전환반응)

  • Kim, Seung-Soo
    • Korean Chemical Engineering Research
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    • v.45 no.5
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    • pp.455-459
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    • 2007
  • Plasma catalytic methane conversion was carried out in the presence of sol-gel derived $Pt/TiO_2$ catalysts within a dielectric-barrier discharge (DBD) reactor. Plasma-assisted reduction (PAR) was applied to reduce the prepared $Pt/TiO_2$ catalysts in DBD reactor, and prepared catalysts were successively reduced by PAR within 20 min irrespective of the Pt loading and the calcination temperature. The highest methane conversion was 40% when 3 wt% $Pt/TiO_2$ and 5 wt% $Pt/TiO_2$ catalysts were used after calcination at $600^{\circ}C$. The selectivities of light alkanes ($C_2H_6$, $C_3H_8$, $C_4H_{10}$) were highly increased when $Pt/TiO_2$ catalysts were used in DBD reactor.

Wet-etching Properties of GaAs Using $NH_4OH-H_2O_2-H_2O$ Mixed Solution and Its Application to Fabrication Method for Released GaAs Microstructures with Rectangular Cross Section ($NH_4OH-H_2O_2-H_2O$ 혼합액을 이용한 GaAS의 습식식각 특성 연구 및 이를 이용한 부유된 사각형 단면을 가지는 GaAs 미세구조물의 제작 방법)

  • Kim, Jong-Pal;Park, Sang-Jun;Paik, Seung-Joon;Kim, Se-Tae;Koo, Chi-Wan;Lee, Seung-Ki;Cho, dong-Il
    • Journal of Sensor Science and Technology
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    • v.10 no.5
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    • pp.304-313
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    • 2001
  • In this research, we investigate wet-etching properties of GaAs in $NH_4OH-H_2O_2-H_2O$, and develop the fabrication method of GaAs microstructures with rectangular cross section using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and cross-section etch profiles of (001) GaAs with 16 different compositions and the undercut rates with 5 different compositions are measured using $NH_4OH-H_2O_2-H_2O$ mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is proposed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.

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A Study for Kinetics and Oxidation Reaction of Substituted Benzyl Alcohols Using (C10H8N2H)2Cr2O7 ((C10H8N2H)2Cr2O7를 이용한 치환 벤질 알코올류의 산화반응과 반응속도에 관한 연구)

  • Park, Young Cho;Kim, Young Sik;Kim, Soo Jong
    • Applied Chemistry for Engineering
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    • v.28 no.5
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    • pp.597-600
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    • 2017
  • $(C_{10}H_8N_2H)_2Cr_2O_7$ was synthesized by reacting 4,4'-bipyridine and chromium (VI) trioxide. The structure of the product was characterized with FT-IR (infrared spectroscopy) and elemental analysis. The oxidation of benzyl alcohol using $(C_{10}H_8N_2H)_2Cr_2O_7$ in various solvents showed that the reactivity increased with the increase of the solvent dielectric constant, in the order of DMF (N,N'-dimethylformamide) > acetone > chloroform > cyclohexane. In the presence of DMF, an acidic catalyst such as $H_2SO_4$ $(C_{10}H_8N_2H)_2Cr_2O_7$ oxidized benzyl alcohol (H) and its derivatives ($p-OCH_3$, $m-CH_3$, $m-OCH_3$, m-Cl, $m-NO_2$). Electron donating substituents accelerated the reaction rate, whereas electron acceptor groups retarded the reaction rate. Hammett reaction constant (${\rho}$) was -0.70 (308 K). The observed experimental data were used to rationalize the hydride ion transfer in the rate determining step.