• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1114-1115
• /
• 2006

The preparation of single-phase $CuLaO_2$ with delafossite-type structure by means of the solid-state reaction method was investigated using X-ray diffraction. The results showed that notwhistanding the fact that there was a trace of metallic copper, nearly single-phase $CuLaO_2$ was obtained by using $La(OH)_3$ as a lanthanum source and by firing the mixed powder with nonstoichiometric composition ratio of $La(OH)_3:Cu_2O=1:1.425$ in a vacuum at 1273 K for 10 h. The measurement of electrical conductivity and Seebeck coefficient showed that $CuLaO_2$ thus obtained was a p-type semiconductor and had a Seebeck coefficient of approximately $70{\mu}V/K$.

• Korean Journal of Environmental Agriculture
• /
• v.13 no.3
• /
• pp.321-337
• /
• 1994

The garbage from the dwelling houses was composted in two kinds of small composter in laboratory to investigate the possibility of garbage composting. They were general small composters. One (type 1) was insullated but the other (type 2) was not. Because it was found that type 2 was not available for composting under our meteorological conditions through winter experiment, only type 1 was tested in spring and summer. The experiment was performed for 8 weeks in each season. The seasonal variation of several compounds in compost was evaluated and discussed. The result summarized belows are those taken at the end of the experiment, if the time was not specified. 1) The maximum temperature was $58^{\circ}C$ in spring, $57^{\circ}C$ in summer and $41^{\circ}C$ in winter. This temperature was enough to destroy the pathogen except for winter. 2) The mass was reduced to average 62.5% and the volume reduction was avergae 74%. 3) The density was estimated as 0.7kg/l in spring, 0.8kg/l in summer and 1.1kg/l in winter. 4) The water content was not much changed for composting periods. It had 75.6% in spring and 76.6% in summer and winter. 5) There was a great seasonal difference in pH value. It was reached to pH 6.13 in spring, pH 8.62 in summer and pH 4.75 in winter. 6) The faster organic matter was decomposed, the greater ash content was increased. Cellulose and lignin content were increased, but hemicellulose content was reduced during composting period. 7) Nitrogen contents were in the range of 3.1-5.6% and especially high in summer. After ammonium nitrogen contents were increased at the early stage of composting period, they were decreased. The maximum ammonium nitrogen content was 3,243mg/kg after 2 weeks in winter, 6,053mg/kg after 3 weeks in spring and 30,828mg/kg after 6 weeks in summer. C/N-ratios were not much changed. Nitrification occurred actively in spring and summer. 8) The contents of volatile and higher fatty acids were increased in early stage of composting and reduced after that. The maximum content of total fatty acid was 10.1% after 2 weeks in winter, 5.8% after 2 weeks in spring and 15.7% after 4 weeks in summer. 9) The contents of inorganic compounds were not accumulated as composting was proceeded. They were in the range of 0.9-4.4% $P_2O_5$, 1.6-2.9% $K_2O$, 2.4-4.6% CaO and 0.30-0.80% MgO. 10) CN and heavy metal contents did not show any tendency. They were in the range of 0.11-28.99mg/kg CN, 24-166mg/kg Zn, 5-129mg/kg Cu, 0.8-14.3mg/kg Cd, 7-42mg/kg Pb, ND-30mg/kg Cr and $ND-132.16\;{\mu}g/kg$ Hg.

• Journal of the Korean Vacuum Society
• /
• v.19 no.1
• /
• pp.10-13
• /
• 2010

We studied the effect of $O_2$ plasma treatments on the electrical property of Ti / Al ohmic contacts to N-face n-type GaN. The surface of N-face, n-type GaN has been treated with $O_2$ plasma for 120 s before the deposition of bilayered electrodes, Ti (50 nm) / Al (35 nm), and its contact resistance was compared with that of the reference sample without $O_2$ plasma. As a result, we found that the ohmic contact was reduced from $4.3\;{\times}\;10^{-1}\;{\Omega}cm^2$ to $1.25\;{\times}\;10^{-3}\;{\Omega}cm^2$ by applying $O_2$ plasma on the surface of n-type GaN, which was attributed to the reduction in the Schottky barrier height (SBH), caused by nitrogen vacancies formed during the $O_2$ plasma process.

• Economic and Environmental Geology
• /
• v.37 no.6 s.169
• /
• pp.657-667
• /
• 2004

Arsenic was detected in the 29 water samples out of the 46 groundwaters located in the Ulsan metropolitan area and it's concentration ranges from $<0.1\;to\;72{\mu}g/L$. Among them the arsenic concentrations of three samples are over domestic drinking-water requirements $(50{\mu}g/L)$, and those of 10 samples are more than WHO MCLs, $10{\mu}g/L.$. High arsenic groundwater were recognized in the two region; one was near the tectonic line, especially Ulsan iron mine at Dalcheunri and the other was around Hyomundong distributed Jeongia conglomerate. It is estimated that the former is originated from pyrite oxydation type, oxygenated redox, whilst the latter is resulted from oxidation of reducted FeOOH. The species of arsenic in groundwater is in pentavalent arsenic, $H_2AsO_4^-,\;HAsO4_^{-2}$ near tectonic line, and trivalent arsenic, $H_3AsO_3$ around Hyomundong.

• Journal of the Korean Chemical Society
• /
• v.54 no.4
• /
• pp.395-401
• /
• 2010

A series of macrocyclic complexes of the type [M(L/L')$(NO_3)_n$].$mH_2O$ and [VO(L/L')($SO_4$)].$2H_2O$, where L/L' is a Schiff base "3,4,10,11-tetraphenyl/tetramethyl-1,2,5,6,8,9,12,13-octaaza cyclotetradeca-2,4,9,11-tetraene-7,14-dithione" derived from thiocarbohydrazide (TCH), benzilmonohydrazone (BMH)/diacetylmonohydrazone (DMH) and carbon disulphide, M = $UO_2$ (VI), Th(IV) and ZrO(IV), n = 2, 4, m = 2, 3, have been synthesized via metal ion template methods. The complexes are characterized on the basis of elemental analysis, thermal analysis, molar conductivity, magnetic moment, electronic, infrared and $^1H$-NMR spectral studies. The ESR and cyclic voltammetry studies of the vanadyl complexes have been carried out. The results indicate that the VO(IV) ion is penta-coordinated yielding paramagnetic complexes; $UO_2$(VI) and ZrO(IV) ions are hexacoordinated where as Th(IV) ion is octa-coordinated yielding diamagnetic complexes of above composition.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.185-190
• /
• 2003

고유전물질인 $HfO_2$ 극박막에 사용될 TaN metal 전극에 대한 특성에 대한 연구를 하였다. 고유전물질인 $HfO_2$는 4" p-type wafer를 SCI cleaning후 ALD(atomic layer deposition)을 통해 $50\AA$를 증착하였다. Ff source는 TEMAH를 이용하였으며 Oxygen source는 $H_2O$를 이용하였다. 이렇게 증착한 $HfO_2$ 극박막에 Ta target을 이용하여 질소 가스를 Ar가스에 첨가하여 reactive sputtering을 통해서 TaN 전극을 증착하였다. TaN 박막의 증착두께는 a--step과 TEM을 통해서 확인하였으며 면저항은 four point probe를 이용하여 측정하였다. 이렇게 증착된 $HfO_2/TaN$구조에 대한 전기적 특성을 측정하였다.

• Journal of Sensor Science and Technology
• /
• v.7 no.4
• /
• pp.271-278
• /
• 1998

A ISFET-based glucose sensor has inherent problems such as low sensitivity, drift effect and long response time. For that reason, a amperometric actuation technique was introduce to make a highly sensitivity of the ISFET glucose sensor with a Pt actuator, which electrolyzes $H_2O_2$, one of the by a by-products of the oxidation reaction of glucose. Moreover, a potential-step measurement method detecting response by only the electrolysis of $H_2O_2$ was developed for eliminating a drift problem. The operation characteristics of ISFET-based glucose sensor was improved by using the amperometric actuation and a measurement techniques. The fabricated ISFET glucose sensor is shown good operation such as characteristics(30mM PBS, about 26mV/decade) and linearity. A portable glucose meter with a highly resolution by using the fabricated ISFET-based glucose sensor with Pt actuation was developed and its characteristics investigated.

• Korean Journal of Materials Research
• /
• v.14 no.2
• /
• pp.90-93
• /
• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• Journal of the Korean Magnetics Society
• /
• v.5 no.4
• /
• pp.281-286
• /
• 1995

In order to study the effect of additives $SiO_{2}$ on the magnetic properties of hexaferrite sheet magnet, we used X-ray diffractometer, Mossbauer spectrometer, and VSM magnetometer. We have prepared $Ba_{0.25}Sr_{0.75}Fe_{12}O_{19}$ green sheets by the Dr. Blade method. Most of samples have a magnetoplurnbite crystal structure of typical M-type hexaferrite. The lattice parameters are found not to be affected by the addition of $SiO_{2}$. ${\alpha}-Fe_{2}O_{3}$ phase develops above $SiO_{2}$ 2.0 wt.%. Isomer shifts indicate that the valence of Fe ions is trivalent. Curie temperatures decrease slightly with increasing $SiO_{2}$ concentrations. It means that the $Si^{4+}$ subsitution for 12k-site $Fe^{3+}$ has an effect on the superexchange interactions Fe-O-Fe, which change the distance and the angle between cations and anions. It was suggested that ${\alpha}-Fe_{2}O_{3}$ phase results from the excessive Fe produced by subsituting $Si^{4+}$ for $Fe^{3+}$. Based upon the results of $Ba_{0.25}Sr_{0.75}Fe_{12}O_{19}$ added with $SiO_{2}$, we concluded that $H_{c}$, $M_{s}$ and $M_{r}$ depend more strongly on the microstructure chracteristics than on the cation substitution.

• Electrical & Electronic Materials
• /
• v.28 no.2
• /
• pp.25-33
• /
• 2015

Ruthenium (Ru) thin films were grown on thermally-grown $SiO_2$ substrates by atomic layer deposition (ALD) using a sequential supply of four kinds of novel zero-valent Ru precursors, isopropyl-methylbenzene-cyclohexadiene Ru(0) (IMBCHDRu, $C_{16}H_{22}Ru$), ethylbenzen-cyclohexadiene Ru(0) (EBCHDRu, $C_{14}H_{18}Ru$), ethylbenzen-ethyl-cyclohexadiene Ru(0) (EBECHDRu, $C_{16}H_{22}Ru$), and (ethylbenzene)(1,3-butadiene)Ru(0) (EBBDRu, $C_{12}H_{16}Ru$) and molecular oxygen (O2) as a reactant at substrate temperatures ranging from 140 to $350^{\circ}C$. It was shown that little incubation cycles were observed for ALD-Ru processes using these new novel zero-valent Ru precursors, indicating of the improved nucleation as compared to the use of typical higher-valent Ru precursors such as cyclopentadienyl-based Ru (II) or ${\beta}$-diketonate Ru (III) metallorganic precursors. It was also shown that Ru nuclei were formed after very short cycles (only 3 ALD cycles) and the maximum nuclei densities were almost 2 order of magnitude higher than that obtained using higher-valent Ru precursors. The step coverage of ALD-Ru was excellent, around 100% at on a hole-type contact with an ultra-high aspect ratio (~32) and ultra-small trench with an aspect ratio of ~ 4.5 (top-opening diameter: ~ 25 nm). The developed ALD-Ru film was successfully used as a seed layer for Cu electroplating.