• 한국대기환경학회지
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• 제16권4호
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• pp.373-380
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• 2000

A new type of photocatalyst plasma air purification filter for decomposition of some VOCs has been developed. The photocatalyst plasma air purification filter employs the pulsed discharge plasma as an energy source of TiO2. photocatalyst instead of UV light. In closed room(2m3) test removal efficiency of some VOCs was 80∼100% in 15∼24 hours. In the initial step of phptocatalyst plasma reaction. Acetone and Nitromethane etc were detected. But they were completely oxidized to CO2 and H2O.

• 한국진공학회지
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• 제17권5호
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• pp.426-434
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• 2008

고밀도 유도결합 플라즈마 장치의 $SiH_4/O_2/Ar$방전에 대한 공간 평균 시뮬레이터를 제작하였다. 제작된 시뮬레이터는 $SiH_4/O_2/Ar$ 플라즈마 방전에서 발생되는 전자, 양이온, 음이온, 중성종, 그리고 활성종들에 대해 공간 평균한 유체 방정식을 기반으로 하고 있으며, 전자가열 모델은 anomalous skin effect를 고려한 파워 흡수 모델을 적용하여 전자가 흡수하는 고주파 파워량을 결정하였다. 완성된 시뮬레이터에서 RF-파워와 압력 변화에 대한 하전입자, 중성종, 활성종들의 밀도 변화 및 전자 온도 의존성을 계산하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.454-454
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• 2010

In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells. In this paper the optical properties of $H_2$ post-treated BZO (boron doped ZnO, ZnO:B) thin film are investigated with $O_2$-plasma treatment. The BZO thin films by MOCVD (Metal Organic Chemical Vapor Deposition) are investigated and the samples of $H_2$ post-treated BZO thin film are tested with $O_2$-plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. We measured the optical properties and surface morphology of BZO thin film with and without $O_2$-plasma treatment. The optical properties such as transmittance, reflectance and haze are measured with integrating sphere and ellipsometer. This result of the BZO thin film with and without $O_2$-plasma treatment is application to the TCO for solar cells.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.80-80
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• 2002

• 한국표면공학회지
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• 제36권1호
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• 한국재료학회지
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• 제2권1호
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• pp.76-82
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• 1992

$TEOS-O_3$ 산화막은 깔개층 물질에 따라 증착속도가 변하는 특성을 나타낸다. 본 논문에서는 $TEOS-O_3$ 산화막의 깔개층 물질 의존성 이외에도 배선 밀도, 배선 간격에 따라 증착속도가 달라지는 패턴 의존성에 대하여 조사하였다. 또한 $TEOS-O_3$ 산화막의 깔개층 물질 의존성 및 패턴 의존성을 줄이기 위해 다층 배선에서 1차 배선후에 깔개층, 즉 TEOS-base 프라즈마 산화막 및 $SiH_4-base$ 프라즈마 산화막을 증착했을 때 $TEOS-O_3$ 산화막의 증착 특성을 조사하였다. 그리고 그 깔개층 물질에 $N_2$ 프라즈마 처리를 했을 때 $TEOS-O_3$ 산화막의 증착 특성에 대해 조사하였다. 그 결과 $TEOS-O_3$ 산화막에서 기판 위에 배선 밀도와 배선 간격에 따른 의존성은 깔개층물질이 $SiH_4-base$ 일때보다 TEOS-base 프라즈마 산화막인 경우 $N_2$ 프라즈마 처리를 하면 깔개층 물질 표면이 O-Si-N화 되므로써 의존성이 사라지게 된다.

• 한국수소및신에너지학회논문집
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• 제24권2호
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• pp.160-171
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• 2013

$LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ powder for cathode materials in lithium rechargeable batteries was treated by atmospheric plasma containing hydrogen to investigate the relationship between charge/discharge performance and physical/chemical changes of materials. Hydrogen plasma at atmosphere pressure was irradiated on the surface of active materials, and the change for their crystal structure, surface morphology, and chemical composition were observed by XRD, SEM-EDS and titration method, respectively. The crystal structure and surface morphology of $H_2$ plasma-treated powders were not changed but their chemical compositions were slightly varied. For charge/discharge test, $H_2$ plasma affected initial capacity and rate capability of active materials but continuous cycling was not subject to plasma treatment. Therefore, it was observed that $H_2$ plasma treatment affected the surface of materials and caused the change of chemical composition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.309-309
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• 2010

We have investigated the effect of $H_2$ plasma treatment on the BZO (ZnO:B, Boron doped ZnO) thin films. The BZO thin films are prepared by LP-MOCVD (Low Pressure Metal Organic Chemical Vapor Deposition) technique and the samples of BZO thin film are performed with $H_2$ plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. After exposing $H_2$ plasma treatment, measurement of transmittance, reflectance and haze spectra in 300~1100 nm, electrical properties as resistivity, mobility and carrier concentration and work function was analysed. Regarding the results of the $H_2$ plasma treatment on the BZO thin films are application to the TCO for solar cells, such as the a-Si thin films solar cell.

• 멤브레인
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• 제4권4호
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• pp.205-212
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• 1994

플라스마 고분자막을 통한 일반기체들(He, $H_2,\;CO_2,\;O_2,\;N_2,\;CH_4$등)의 투과특성을 조사하였으며 IR 분석을 통하여 플라즈마 고분자의 화학적 구조를 살펴 보았다. 플라즈마 고분자막은 불소를 함유한 방향족 화합물의 플라즈마 중합에 의하여 제조하였으며 이 막을 통한 기체투과실험은 $35^{\circ}C$, 1기압에서 행하였다. 이 막들의 투과계수는 투과기체의 분자 크기가 커질수록 감소하는 경향을 나타내었다. 플라즈마 고분자의 $O_2/N_2$ 선택투과도는 상용고분자보다 약간 낮았으나 $CO_2/CH_4$ 선택투과도는 상용고분자보다 매우 높은 것으로 나타났다. FT-IR 분석을 통하여 플라즈마 고분자는 방향족과 지방족 구조를 모두 포함한 구조를 이루고 있다는 것을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.426-428
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• 1989

As a first phase of plasma study intended for semiconductor processing research, we have studied the discharge phenomena. In particular, we have obtained a specific formula for the breakdown voltage as a function of the neutral state pressure of reactive gases. Our experimental results with H2,O2,Ar,CF4 seem ro verify this formula. In addition we find the voltage levels for various gases in the descending order of CF4>O2=Ar>H2 in high pressure region, while H2>CF4>O2>Ar in low pressure region. When H2 and CF4 were mixed, we observe the overall voltage dominated by the gas with lower breakdown volotage.