• Clean Technology
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• v.25 no.1
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• pp.81-90
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• 2019

A dielectric barrier discharge (DBD) plasma reactor packed with $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst was used for the dry ($CO_2$) reforming of propane (DRP) to improve the production of syngas (a mixture of $H_2$ and CO) and the catalyst stability. The plasma-catalytic DRP was carried out with either thermally or plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst at a $C_3H_8/CO_2$ ratio of 1/3 and a total feed gas flow rate of $300mL\;min^{-1}$. The catalytic activities associated with the DRP were evaluated in the range of $500{\sim}600^{\circ}C$. Following the calcination in ambient air, the ${\gamma}-Al_2O_3$ impregnated with the precursor solution ($Ni(NO_3)_2$ and $Ce(NO_3)_2$) was subjected to reduction in an $H_2/Ar$ atmosphere to prepare $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst. The characteristics of the catalysts were examined using X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectrometry (EDS), temperature programmed reduction ($H_2-TPR$), temperature programmed desorption ($H_2-TPD$, $CO_2-TPD$), temperature programmed oxidation (TPO), and Raman spectroscopy. The investigation revealed that the plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst exhibited superior catalytic activity for the production of syngas, compared to the thermally reduced catalyst. Besides, the plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst was found to show long-term catalytic stability with respect to coke resistance that is main concern regarding the DRP process.

• Journal of Korean Society on Water Environment
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• v.28 no.3
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• pp.401-408
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• 2012

High-voltage dielectric discharges are an emerging technique in environmental pollutant degradation, which that are characterized by the production of hydroxyl radicals as the primary degradation species. The initiation and propagation of the electrical discharges depends on several physical, chemical, and electrical parameters such as 1st and 2nd voltage of power, gas supply, conductivity and pH. These parameters also influence the physical and chemical characteristics of the discharges, including the production of reactive species such as OH, $H_2O_2$ and $O_3$. The experimental results showed that the optimum 1st voltage and air flow rate for RNO (N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical) degradation were 160 V (2nd voltage of is 15 kV) and 4 L/min, respectively. As the increased of the 2nd voltage (4 kV to 15 kV), RNO degradation, $H_2O_2$ and $O_3$ generation were increased. The conductivity of the solution was not influencing the RNO degradation and $H_2O_2$ and $O_3$ generation. The effects pH was not high on RNO degradation. However, the lower pH and the conductivity, the higher $H_2O_2$ and $O_3$ generation were observed.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.499-502
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• 2001

Functionally gradient NiCrAlY/$ZrO_2$-$Y_2$$O_3$ and NiCrAlY/$ZrO_2$- $CeO_2$-$Y_2$$O_3$ coatings were prepared by APS. The as-sprayed microstructure consisted of metal-rich and ceramic-rich regions, between which $Al_2$$O_3$-rich layers existed owing to the oxidation during APS. During oxidation between 900 and $1100^{\circ}C$ in air, the pre-existing $Al_2$$O_3$-rich scales grew, due mainly to the preferential reaction of Al with inwardly transporting oxygen along the heterogeneous phase boundaries. As the amount of ceramics in the coating increased, the oxidation resistance increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.356-357
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• 2008

The effects of $O_2$ plasma ashing process for surface treatment of nano-wire Bio-FET were investigated. In order to evaluate the plasma damage introduced by $O_2$ plasma ashing, a back-gate biasing method was developed and the electrical characteristics as a function of $O_2$ plasma power were measured. Serious degradations of electrical characteristics of nano-wire Bio-FET were observed when the plasma power is higher than 50 W. For curing the plasma damages, a forming gas anneal (2 %, $H_2/N_2$) was carried out at $400^{\circ}C$. As a result, the electrical characteristics of nano-wire Bio-FET were considerably recovered.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.102-109
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• 2000

It is difficult to meet the cleanliness requirement of $10^{10}/\textrm{cm}^2$ for the giga level device fabrication with mechanical cleaning techniques like scrubbing which is widely used to remove the particles generated during Chemical Mechanical Polishing (CMP) processes. Therefore, the second cleaning process is needed to remove metallic contaminants which were not completely removed during the mechanical cleaning process. In this paper the experimental results for the removal of the metallic contaminants existing on the wafer surface using remote plasma $H_2$ cleaning and UV/$O_3$ cleaning techniques are reported. In the remote plasma $H_2$ cleaning the efficiency of contaminants removal increases with decreasing the plasma exposure time and increasing the rf-power. Also the optimum process conditions for the removal of K, Fe and Cu impurities which are easily found on the wafer surface after CMP processes are the plasma exposure time of 1min and the rf-power of 100 W. The surface roughness decreased by 30-50 % after remote plasma $H_2$ cleaning. On the other hand, the highest efficiency of K, Fe and Cu impurities removal was achieved for the UV exposure time of 30 sec. The removal mechanism of the metallic contaminants like K, Fe and Cu in the remote plasma $H_2$ and the UV/$O_3$ cleaning processes is as follows: the metal atoms are lifted off by $SiO^*$ when the $SiO^*$is evaporated after the chemical $SiO_2$ formed under the metal atoms reacts with $H^+ \; and\; e^-$ to form $SiO^*$.

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.1
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• pp.1-7
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• 2015

In this study, characteristics of reforming process of automotive liquefied petroleum gas (LPG) fuel using plasma reactor are investigated. Because plasma reformer technology has advantages of a fast start-up and wide fuel/oxidizer ratio of operation, and reactor size is smaller and more simple compared to typical combustor and catalytic reactor, plasma reforming is suitable to the on-board vehicle reformer. To evaluate the characteristics of the reforming process, parametric effect of $O_2/C$ ratios, reactant flow rate and metal form on the process were investigated. In the test of varying $O_2/C$ ratio from partial oxidation to stoichiometry combustion, conversion of LPG was increased but selectivity of $H_2$ decreased. The optimum condition of $O_2/C$ ratio for the highest $H_2$ yield was determined to be around 1.0 for 20~50 lpm, and 1.35 for 100 lpm. Specific energy density (SED) was major factor in reforming process and higher SED leads to higher $H_2$ yield. And metal form in the reformer increased $H_2$ yield of about 34 % as compared to the case of no metal form. The result can be a guide to map optimal condition of reforming process.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.189-193
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• 2004

Pure and Sn or Pt doped $\alpha-Fe_2O_3$ thin films were prepared on $Al_2O_3$ substrates by RF-magnetron sputtering method and the sensitivities were compared. It was found that pure $\alpha-Fe_2O_3$ thin films did not exhibit much selectivity in CO and $i-C_4H_{10}$ gases while it showed the high sensitivity in proportion to the gas concentration of $C_2H_{5}OH$ gas. Pt-doped $\alpha-Fe_2O_3$ showed to be alike sensing properties as pure $\alpha-Fe_2O_3$ thin film in $C_2H_{5}OH$ gas. However, Sn-doped $\alpha-Fe_2O_3$ thin films exhibited the excellent sensitivity and selectivity in Hz gas. After microstructure modification by plasma etching on pure $\alpha-Fe_2O_3$ thin films, the gas sensing characteristics were dramatically changed.

• Korean Journal of Materials Research
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• v.31 no.10
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• pp.552-561
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• 2021

For the purpose of manufacturing a high efficiency TiO₂ photocatalyst, B-doped TiO₂ photocatalysts are synthesized using a plasma electrolytic oxidation method in 0.5 M H₂SO₄ electrolyte with different concentrations of H₃BO₃ as additive. For the B doped TiO₂ layer fabricated from sulfuric electrolyte having a higher concentration of H₃BO₃ additive, the main XRD peaks of (101) and (200) anatase phase shift gradually toward the lower angle direction, indicating volume expansion of the TiO₂ anatase lattice by incorporation of boron, when compared with TiO₂ layers formed in sulfuric acid with lower concentration of additive. Moreover, XPS results indicate that the center of the binding energy peak of B1s increases from 191.45 eV to 191.98 eV, which suggests that most of boron atoms are doped interstitially in the TiO₂ layer rather than substitutionally. The B doped TiO₂ catalyst fabricated in sulfuric electrolyte with 1.0 M H₃BO₃ exhibits enhanced photocurrent response, and high efficiency and rate constant for dye degradation, which is ascribed to the synergistic effect of the new impurity energy band induced by introducing boron to the interstitial site and the improvement of charge transfer reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.209-209
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• 2008

• Journal of Food Hygiene and Safety
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• v.32 no.1
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• pp.64-69
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• 2017

This study was conducted to investigate the effect of cold plasma combined with UV-C irradiation against Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes on lettuce. E. coli O157:H7, S. Typhimurium, and L. monocytogenes, corresponding to approximately 5.82, 5.09, 5.65 log CFU/g, were inoculated on lettuce, respectively. Then, the lettuce was treated with cold plasma, UV-C and combination (cold plasma + UV-C), respectively. The treated lettuce was stored for 9 days at $4^{\circ}C$ for microbiological analysis and sensory evaluation. Cold plasma reduced the populations of E. coli O157:H7, S. Typhimurium, and L. monocytogenes by 0.26, 0.65, and 0.93 log CFU/g, respectively. Each microorganism were reduced by 0.87, 0.88, and 1.14 log CFU/g after UV-C treatment. And, the combined treatment that was treated by cold plasma after UV-C treatment reduced the populations of inoculated microorganisms by 1.44, 2.70, 1.62 log CFU/g, respectively. The all treatment significantly (p < 0.05) reduced the populations of all inoculated bacteria compared to untreated lettuce. UV-C combined with cold plasma was the most effective for reducing the pathogenic bacteria on lettuce, by showing log-reductions of ${\geq}2.0\;log\;CFU/g$. All treatment was not significantly different until 6 day storage compared to control group in terms of appearance, texture and overall acceptability. Therefore, the combined treatment will be an effective intervention method to control the bacteria on lettuce.